Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT9014
NPN SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL
& LOW NOISE

3
FEATURES
* High Total Power Dissipation. (450mW)
* Excellent hFE Linearity.
* Complementary to UTC MMBT9015
2
1
SOT-23
(JEDEC TO-236)

ORDERING INFORMATION
Ordering Number
Note:

MMBT9014G-x-AE3-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
C: Collector
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R206-022.F
MMBT9014

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Collector dissipation
PC
225
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Collector cutoff current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter on voltage
Current-Gain-Bandwidth Product
Output Capacitance
Noise Figure

SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
fT
COB
NF
TEST CONDITIONS
IC=100A, IE=0
IC=1mA, IB=0
IE=100A, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
VCE=5V,Ic=1mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
VCE=5V,IC=0.2mA,f=1KHz,RS=2KΩ
MIN
50
45
5
TYP
60
280
0.14
0.84
0.63
270
2.2
0.9
0.58
150
MAX UNIT
V
V
V
50
nA
100
nA
1000
0.3
V
1.0
V
0.7
V
MHz
3.5
pF
10
dB
CLASSIFICATION OF hFE
RANK
RANGE
A
60-150
B
100-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
C
200-600
D
400-1000
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MMBT9014
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS

Static Characteristic
Dc Current Gain
1000
100
IB=160μA
IB=140μA
IB=120μA
IB=100μA
IB=80μA
70
60
50
500
Dc Current Gain, hFE
Collector Current, IC(mA)
90
80
IB=60μA
40
IB=40μA
30
IB=20μA
20
VCE=5V
100
50
10
0
0
10
20
40
30
10
50
1
Base-Emitter Saturation Voltage Collecter
Saturation Voltage
1000
VCE(SAT)
500
100
VBE(SAT)
50
IC=20IB
10
1
10
100
1000
100
Collector Current, IC(mA)
1000
Collector Current, IC(mA)
Current Gain-Bandwidth Product
Current Gain-Bandwidth Product, fT (MHz)
Saturation Voltage, VBE(SAT) VCE(SAT) (mV)
Collect-Emitter Voltage, VCE(V)
10
1000
500
VCE=5V
100
50
10
1
10
100
1000
Collector Current, IC(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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