Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT2222A
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
3
3
1
2

FEATURES
SOT-23
* This device is for use as a medium power amplifier and switch
requiring collector currents up to 600mA.
(JEDEC TO-236)
3
1
SOT-323
1
2
1
SOT-523
DFN-3(1x0.6)
ORDERING INFORMATION

Ordering Number
Note:

2
MMBT2222AG-AE3-R
MMBT2222AG-AL3-R
MMBT2222AG-AN3-R
MMBT2222AG-K03-1006-R
Pin Assignment: E: Emitter
B: Base
Package
SOT-23
SOT-323
SOT-523
DFN-3(1×0.6)
C: Collector
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
B
E
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
MARKING
SOT-23 / SOD-323 / SOD-523
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
DFN-3(1×0.6)
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MMBT2222A
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
RATINGS
UNIT
75
V
40
V
6
V
600
mA
SOT-23
350
SOT-323
200
Collector Dissipation
PC
mW
SOT-523
150
DFN-3(1×0.6)
300 (Note 1)
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.

SYMBOL
VCBO
VCEO
VEBO
IC
THERMAL DATA
PARAMETER
SYMBOL
SOT-23
SOT-323
Junction to Ambient
θJA
SOT-523
DFN-3(1×0.6)
Note: Transistor mounted on an FR4 printed circuit board.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
357
625
833
416 (Note)
UNIT
C/W
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MMBT2222A
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
IEBO
IBL
ICEX
DC Current Gain
Collector-Emitter Saturation
Voltage(Note)
hFE
VCE(SAT)
Base-Emitter Saturation
VBE(SAT)
Voltage(Note)
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Re(hje)
Frequency Input Impedance
Transition Frequency
fT
Output Capacitance
Cobo
Input Capacitance
Cibo
Collector Base Time Constant
rb'Cc
Noise Figure
NF
TEST CONDITIONS
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC =0
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150C
VEB=3.0V, IC=0
VCE=60V, VEB(OFF)=3.0V
VCE=60V, VEB(OFF)=3.0V
75
40
6
IC =0.1mA, VCE=10V
IC =1.0mA, VCE=10V
IC =10mA, VCE=10V
IC =10mA, VCE=10V, Ta= -55C
IC =150mA, VCE=10V(Note)
IC =150mA, VCE=1.0V(Note)
IC =500mA, VCE=10V(Note)
IC =150mA, IB=15mA
IC =500mA, IB=50mA
IC =150mA, IB=15mA
IC =500mA, IB=50mA
35
50
75
35
100
50
40
0.6
IC=20mA, VCB=20V, f=300MHz
IC =20mA, VCE=20V, f=100MHz
VCB=10V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
IC=20mA, VCB=20V, f=31.8MHz
IC=100μA, VCE=10V, Rs=1.0kΩ
f=1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
tD
VCC=30V, VBE(OFF)=0.5V,
Rise Time
tR
IC=150mA, IB1=15mA
Storage Time
tS
Vcc=30V, IC=150mA
Fall Time
tF
IB1= IB2=15mA
Note: Pulse test: Pulse Width  300μs, Duty Cycle  2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
0.01
10
10
20
10
V
V
V
µA
µA
nA
nA
nA
300
0.3
1.0
1.2
2.0
V
V
V
V
60
Ω
8.0
25
150
MHz
pF
pF
pS
4.0
dB
10
25
225
60
ns
ns
ns
ns
300
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MMBT2222A
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NPN SILICON TRANSISTOR
TEST CIRCUITS
30V
200Ω
16V
0
≤200ns
1.0kΩ
500Ω
Fig 1. Saturated Turn-On Switching Time
Fig 2. Saturated Turn-Off Switching Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT2222A
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain, hFE
500
VCE=5V
400
300
125°C
200
25°C
100
-40°C
0
0.1 0.3
1
10
30
100
300
Collector-Emitter Voltage, VCE(SAT) (V)
DC Current Gain vs. Collector Current
Collector Current, IC (mA)
0.4
β=10
0.3
125°C
0.2
25°C
0.1
-40°C
1
10
100
500
Capacitance (pF)
Collector Current, ICBO (nA)
Base-Emitter Voltage, VBE(SAT) (V)
Base-Emitter on Voltage, VBE(ON) (V)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT2222A
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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