Datasheet

UNISONIC TECHNOLOGIES CO., LTD
D882SS
NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR

FEATURES
* High Current Output up to 3A
* Low Saturation Voltage
* Complement to B772SS

APPLICATIONS
* Audio Power Amplifier
* DC-DC Convertor
* Voltage Regulator


ORDERING INFORMATION
Ordering Number
Package
D882SSG-x-AE3-R
SOT-23
1
E
Pin Assignment
2
3
B
C
Packing
Tape Reel
MARKING
D82G
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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D882SS

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
TA=25°C
Collector Dissipation
TC=25°C
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
RATINGS
40
30
5
3
7
0.6
350
10
PC
UNIT
V
V
V
A
A
A
mW
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
TEST CONDITIONS
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
VCE=2V, IC=20mA
VCE=2V, IC=1A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
MIN
40
30
5
TYP
MAX
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
UNIT
V
V
V
nA
nA
V
V
MHz
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
160-320
E
200-400
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
Derating Curve of Safe Operating Areas
1.2
0.8
Derating, IC (%)
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
0.4
100
S/
b
n
io
at
ip
ss
Di
50
IB=2mA
0
4
8
12
16
Collector-Emitter Voltage (V)
0
20
-50
0
50
100
150
Case Temperature, TC (°C)
10
1
Collector Current, IC (A)
IB=8mA
10
10
0
100
IC(max), DC
10-1
IC(max), Pulse
10
10
-2
10
-1
10
0
10
-2
100
1
Collector Current, Ic (A)
101
102
Collector-Emitter Voltage
DC Current Gain
Saturation Voltage
104
102
Saturation Voltage (mV)
103
DC Current Gain, hFE
S
VCE=5V
1m
S
1m
10
mS
1
200
Safe Operating Area
3
102
d
0.
Current Gain- Bandwidth Product,
FT(MHz)
Current Gain-Bandwidth Product
10
ite
d
ite
IB=1mA
0
lim
lim
Collector Current, Ic (A)
150
IB=9mA
1.6
VCE=2V
101
100
100
10
1
10
3
10
4
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VBE(SAT)
103
VCE(SAT)
102
101
100
100
101
102
103
104
Collector Current, IC (mA)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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