UNISONIC TECHNOLOGIES CO., LTD 2SB936/A Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE DESCRIPTION The UTC 2SB936/A is a silicon PNP epitaxial planar type, it uses UTC’s advanced technology to provide the customers with high DC current gain, low collector to emitter saturation voltage and high switch speed, etc. The UTC 2SB936/A is suitable for small electronic equipment and printed circuit board, etc. FEATURES * High DC current gain * Low collector to emitter saturation voltage * High switch speed ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SB936L-TN3-R 2SB936G-TN3-R TO-252 2SB936AL-TN3-R 2SB936AG-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel MARKING 2SB936 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 2SB936A 1 of 3 QW-R209-029.c 2SB936/A Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT -40 V Collector-Base Voltage VCBO -50 V -20 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Peak Collector Current ICP -20 A TC=25°C 40 W PC Collector Power Dissipation TA=25°C 1.3 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2SB936 2SB936A 2SB936 2SB936A ELECTRICAL CHARACTERISTICS (TC=25°C) PARAMETER Collector-Base Breakdown Voltage 2SB936 2SB936A 2SB936 Collector-Emitter Voltage 2SB936A Emitter-Base Breakdown Voltage 2SB936 Collector Cut-Off Current 2SB936A Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=-10mA, IE=0 BVCEO IC=-10mA, IB=0 BVEBO IC=-10mA, IC=0 VCB=-40V, IE=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.1A VCE=-2V, IC=-3 A IC=-10A, IB=-0.33A IC=-10A, IB=-0.33A VCE=-10V, f=10MHz, IC=-0.5A VCB=-10V, f=1MHz, IE=0 ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton ts tr IC=-3A, IB1=-0.1A, IB2=0.1A MIN -40 -50 -20 -40 -5 TYP 45 90 MAX UNIT V V V V V -50 µA -50 µA -50 µA 260 -0.6 -1.5 100 400 0.1 0.5 0.1 V V MHz pF μs μs μs CLASSIFICATION OF hFE2 RANK hFE2 Q 90 ~ 180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 130 ~ 260 2 of 3 QW-R209-029.c 2SB936/A Preliminary PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-029.c