Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB936/A
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
PLANAR TYPE

DESCRIPTION
The UTC 2SB936/A is a silicon PNP epitaxial planar type, it uses
UTC’s advanced technology to provide the customers with high DC
current gain, low collector to emitter saturation voltage and high
switch speed, etc.
The UTC 2SB936/A is suitable for small electronic equipment
and printed circuit board, etc.

FEATURES
* High DC current gain
* Low collector to emitter saturation voltage
* High switch speed

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SB936L-TN3-R
2SB936G-TN3-R
TO-252
2SB936AL-TN3-R
2SB936AG-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Reel
Tape Reel
MARKING
2SB936
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
2SB936A
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
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
-40
V
Collector-Base Voltage
VCBO
-50
V
-20
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-10
A
Peak Collector Current
ICP
-20
A
TC=25°C
40
W
PC
Collector Power Dissipation
TA=25°C
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2SB936
2SB936A
2SB936
2SB936A

ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
Collector-Base Breakdown
Voltage
2SB936
2SB936A
2SB936
Collector-Emitter Voltage
2SB936A
Emitter-Base Breakdown Voltage
2SB936
Collector Cut-Off Current
2SB936A
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time

SYMBOL
TEST CONDITIONS
BVCBO
IC=-10mA, IE=0
BVCEO
IC=-10mA, IB=0
BVEBO
IC=-10mA, IC=0
VCB=-40V, IE=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-3 A
IC=-10A, IB=-0.33A
IC=-10A, IB=-0.33A
VCE=-10V, f=10MHz, IC=-0.5A
VCB=-10V, f=1MHz, IE=0
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
ts
tr
IC=-3A, IB1=-0.1A, IB2=0.1A
MIN
-40
-50
-20
-40
-5
TYP
45
90
MAX UNIT
V
V
V
V
V
-50
µA
-50
µA
-50
µA
260
-0.6
-1.5
100
400
0.1
0.5
0.1
V
V
MHz
pF
μs
μs
μs
CLASSIFICATION OF hFE2
RANK
hFE2
Q
90 ~ 180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
130 ~ 260
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Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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