Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) Silicon PNP epitaxial planar type For low-voltage switching Unit: mm Unit −40 V 1 −50 −20 Collector-emitter voltage 2SB0936 (Base open) 2SB0936A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −10 A Peak collector current ICP −20 A 40 W Collector power dissipation 2 V −40 PC Ta = 25°C 14.4±0.5 3.0+0.4 –0.2 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (1.5) Rating VCBO 2SB0936A 1.5+0 –0.4 4.4±0.5 Symbol 2SB0936 1.0±0.1 (7.6) Parameter 6.0±0.2 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-base voltage (Emitter open) 3.4±0.3 10.0±0.3 1.5±0.1 • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 8.5±0.2 4.4±0.5 ■ Features (6.5) 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. 1.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB0936 Collector-base cutoff current (Emitter open) 2SB0936 Conditions IC = −10 mA, IB = 0 VCEO Min Typ Max −20 Unit V −40 2SB0936A ICBO 2SB0936A VCB = −40 V, IE = 0 −50 VCB = −50 V, IE = 0 −50 Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −2 V, IC = − 0.1 A 45 hFE2 VCE = −2 V, IC = −3 A 90 Base-emitter voltage VBE(sat) IC = −10 A, IB = − 0.33 A Collector-emitter saturation voltage VCE(sat) IC = −10 A, IB = − 0.33 A −50 µA µA 260 −1.5 − 0.6 V V VCE = −10 V, IC = − 0.5 A, f = 10 MHz 100 MHz Cob VCB = −10 V, IE = 0, f = 1 MHz 400 pF Turn-on time ton IC = −3 A, 0.1 µs Storage time tstg IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs Fall time tf VCC = −20 V 0.1 µs Transition frequency fT Collector output capacitance (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 90 to 180 130 to 260 Publication date: April 2003 Note) The part number in the parenthesis shows conventional part number. SJD00017BED 1 2SB0936, 2SB0936A IC VCE –80mA −10 30 20 10 –60mA –50mA −8 –40mA –35mA −6 –30mA –25mA −4 –15mA –10mA –5mA (3) 40 80 120 160 −2 0 Ambient temperature Ta (°C) −4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) TC=–25˚C 100˚C 25˚C − 0.1 − 0.01 − 0.1 −1 –25˚C 10 Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob −10 103 102 10 1 –0.01 −100 103 102 10 −100 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C tstg ton 0.1 tf −2 −4 Non repetitive pulse TC=25˚C −10 t=1ms IC t=10ms t=300ms −1 − 0.1 −6 Collector current IC (A) SJD00017BED –10 ICP 1 0 –1 Safe operation area −100 10 0.01 –0.1 Collector current IC (A) ton, tstg, tf IC IE=0 f=1MHz TC=25˚C −10 VCE=–10V f=10MHz TC=25˚C 102 −1 −1 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) 2 − 0.01 − 0.1 fT I C 25˚C TC=100˚C Cob VCB −10 –25˚C 104 103 1 − 0.1 −10 104 −1 −12 VCE=–2V Collector current IC (A) 1 − 0.1 −10 25˚C hFE IC 104 IC/IB=30 −1 −8 TC=100˚C Collector-emitter voltage VCE (V) VBE(sat) IC −10 −6 Transition frequency fT (MHz) 0 0 Collector current IC (A) 0 −1 − 0.1 –20mA −2 (2) IC/IB=30 −8 − 0.01 − 0.1 −1 −10 2SB0936A (1) 40 TC=25˚C IB=–100mA −10 2SB0936 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −12 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 50 −100 Collector-emitter voltage VCE (V) 2SB0936, 2SB0936A Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00017BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL