UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable for switching regulator in battery charger applications, heavy load driver and voltage regulation in bias supply circuits, etc. FEATURES * Very low collector to emitter saturation voltage * High DC current gain EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free STD888L-TN3-T STD888G-TN3-T STD888L-TN3-R STD888G-TN3-R STD888L-TN3-T Package TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TN3: TO-252 (3)Halogen Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Packing Tube Tape Reel 1 of 3 QW-R209-028.a STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO -60 V Collector-Emitter Voltage (IB=0) VCEO -30 V Emitter-Base Voltage (IC=0) VEBO -6 V Collector Current IC -5 A Collector Peak Current (tp<5ms) ICM -10 A Total Dissipation at TC=25°C PD 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO (Note 1) BVEBO ICBO IEBO Collector-Emitter Saturation Voltage VCE(sat) (Note 1) Base-Emitter Saturation Voltage VBE(sat) (Note 1) DC Current Gain hFE (Note 1) TEST CONDITIONS IE=0, IC=-100µA IB=0, IC=-10mA IC=0, IE=-100µA VCB=-30V, IE=0 IC=0, VEB=-6V IC=-500mA, IB=-5mA IC=-2A, IB=-50mA IC=-5A, IB=-250mA IC=-6A, IB=-250mA IC=-8A, IB=-400mA IC=-10A, IB=-500mA IC=-2A, IB=-50mA IC=-6A, IB=-250mA IC=-10mA, VCE=-1V IC=-500mA, VCE=-1V IC=-5A, VCE=-1V IC=-8A, VCE=-1V IC=-10A, VCE=-1V Delay Time tD Rise Time tR IC=-3A, IB1=-IB2=-60mA V Storage Time tS CC=-20V Fall Time tF Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -60 -30 -6 150 150 75 40 15 TYP MAX UNIT V V V -10 nA -10 nA -0.15 V -0.25 V -0.70 V -0.70 V -1 V -1.5 V -1.1 V -1.4 V 200 200 300 100 55 35 180 220 ns 160 210 ns 250 300 ns 80 100 ns 2 of 3 QW-R209-028.a STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR RESISTIVE LOAD SWITCHING TEST CIRCUIT UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R209-028.a