Datasheet

UNISONIC TECHNOLOGIES CO., LTD
STD888
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT,
HIGH PERFORMANCE,
LOW VOLTAGE PNP
TRANSISTOR

DESCRIPTION
The UTC STD888 is a high current, high performance, low voltage
PNP transistor; it uses UTC’s advanced technology to provide
customers high DC current gain and very low saturation voltage.
The UTC STD888 is suitable for switching regulator in battery
charger applications, heavy load driver and voltage regulation in bias
supply circuits, etc.

FEATURES
* Very low collector to emitter saturation voltage
* High DC current gain

EQUIVALENT CIRCUIT
C
B
E

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
STD888L-TN3-T
STD888G-TN3-T
STD888L-TN3-R
STD888G-TN3-R
STD888L-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TN3: TO-252
(3)Halogen Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Packing
Tube
Tape Reel
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QW-R209-028.a
STD888

Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
-60
V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO
-6
V
Collector Current
IC
-5
A
Collector Peak Current (tp<5ms)
ICM
-10
A
Total Dissipation at TC=25°C
PD
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BVCBO
BVCEO (Note 1)
BVEBO
ICBO
IEBO
Collector-Emitter Saturation Voltage
VCE(sat)
(Note 1)
Base-Emitter Saturation Voltage
VBE(sat)
(Note 1)
DC Current Gain
hFE
(Note 1)
TEST CONDITIONS
IE=0, IC=-100µA
IB=0, IC=-10mA
IC=0, IE=-100µA
VCB=-30V, IE=0
IC=0, VEB=-6V
IC=-500mA, IB=-5mA
IC=-2A, IB=-50mA
IC=-5A, IB=-250mA
IC=-6A, IB=-250mA
IC=-8A, IB=-400mA
IC=-10A, IB=-500mA
IC=-2A, IB=-50mA
IC=-6A, IB=-250mA
IC=-10mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-5A, VCE=-1V
IC=-8A, VCE=-1V
IC=-10A, VCE=-1V
Delay Time
tD
Rise Time
tR
IC=-3A, IB1=-IB2=-60mA
V
Storage Time
tS
CC=-20V
Fall Time
tF
Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-60
-30
-6
150
150
75
40
15
TYP MAX UNIT
V
V
V
-10
nA
-10
nA
-0.15 V
-0.25 V
-0.70 V
-0.70 V
-1
V
-1.5
V
-1.1
V
-1.4
V
200
200 300
100
55
35
180 220
ns
160 210
ns
250 300
ns
80 100
ns
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
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
RESISTIVE LOAD SWITCHING TEST CIRCUIT
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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