UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA. FEATURES * Low VCE(SAT * High collector current gain under high collector current condition EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Package MMDT2907AG-AL6-R SOT-363 MMDT2907AG-AL6-R 1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL6: SOT-363 (3)Green Package (3) G: Halogen Free and Lead Free 6 C1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2) PARAMETER SYMBOL RATINGS UNIT 30 V Collector-Emitter Voltage VCEO -30 V 60 V Collector-Base Voltage VCBO -60 V 5.0 V Emitter-Base Voltage VEBO -5.0 V 500 mA Collector Current - Continuous IC -500 mA 300 mW Total Device Dissipation PD Derate above 25°C 2.4 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. TR1 TR2 TR1 TR2 TR1 TR2 TR1 TR2 THERMAL DATA (TA=25°C, unless otherwise noted) PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA RATINGS 415 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2) TR1 PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=10mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 Collector Cutoff Current ICBO VCB=50V, IE=0 Emitter Cutoff Current IEBO VEB=3.0V, IC=0 ON CHARACTERISTICS IC=1.0mA, VCE=10V IC=10mA, VCE=10V DC Current Gain hFE IC=150mA, VCE=10V (Note 1) IC=300mA, VCE=10V (Note 1) IC=150mA, IB=15mA Collector-Emitter Saturation Voltage (Note 1) VCE(sat) IC=300mA, IB=30mA Base-Emitter Saturation Voltage (Note 1) VBE(sat) IC=150mA, IB=15mA SMALL SIGNAL CHARACTERISTICS IC=50mA, VCE=20V, Current Gain - Bandwidth Product fT f=100MHz Output Capacitance COBO VCB=10V, IE=0, f=100kHz Input Capacitance CIBO VEB=2.0V, IC=0, f=100kHz IC=100µA, VCE=10V, Noise Figure NF RS=1.0kΩ, f=1.0kHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 60 5.0 30 30 V V V nA nA 0.4 1.4 1.3 V V V 50 75 100 30 250 MHz 4.0 12 pF pF 2.0 dB 2 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-on Time tON VCC=30V, IC=150mA, Delay Time tD IB1=15mA Rise Time tR Turn-off Time tOFF VCC=6.0V, IC=150mA, Storage Time tS IB1=IB2=15mA Fall Time tF Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. MIN TYP MAX UNIT 30 8.0 20 80 60 20 ns ns ns ns ns ns TR2 PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage V(BR)CBO IC=-10µA, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=-10µA, IC=0 Collector Cutoff Current ICBO VCB=-50V, IE=0 Emitter Cutoff Current IEBO VEB=-3.0V, IC=0 ON CHARACTERISTICS IC=-1.0mA, VCE=-10V IC=-10mA, VCE=-10V DC Current Gain hFE IC=-150mA, VCE=-10V (Note 1) IC=-300mA, VCE=-10V (Note 1) IC=-150mA, IB=-15mA Collector-Emitter Saturation Voltage (Note 1) VCE(sat) IC=-300mA, IB=-30mA Base-Emitter Saturation Voltage (Note 1) VBE(sat) IC=-150mA, IB=-15mA SMALL SIGNAL CHARACTERISTICS IC=-50mA, VCE=-20V, Current Gain - Bandwidth Product fT f=100MHz Output Capacitance COBO VCB=-10V, IE=0, f=100kHz Input Capacitance CIBO VEB=-2.0V, IC=0, f=100kHz IC=-100µA, VCE=-10V, Noise Figure NF RS=1.0kΩ, f=1.0kHz SWITCHING CHARACTERISTICS Turn-on Time tON VCC=-30V, IC=-150mA, Delay Time tD IB1=-15mA Rise Time tR Turn-off Time tOFF VCC=6.0V, IC=-150mA, Storage Time tS IB1=IB2=-15mA Fall Time tF Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -30 -60 -5.0 -30 -30 V V V nA nA -0.4 -1.4 -1.3 V V V 50 75 100 30 250 MHz 4.0 12 pF pF 2.0 dB 30 8.0 20 80 60 20 ns ns ns ns ns ns 3 of 4 QW-R218-028.b MMDT2907A Preliminary DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R218-028.b