UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate interference. * Mounting cost and area can be cut in half. EQUIVALENT CIRCUIT 6 5 4 Tr1 Tr2 1 2 3 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT8150L-AL6-R MMDT8150G-AL6-R Package Packing SOT-363 Tape Reel MARKING T81 G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R218-017.b MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note 2) A Power Dissipation PD 200 (total) (Note 3) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse, PW=10ms 3. 150mW per element must not be exceeded. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL TEST CONDITIONS BVCBO IC=100µA, IE=0 BVCEO IC=2mA, IB=0 BVEBO IE=100µA, IC=0 ICBO VCB=30V, IE=0 IEBO VEB=6V, IC=0 VCE(SAT)1 IC=50mA, IB=2.5mA Collector-Emitter Saturation Voltage VCE(SAT)2 IC=400mA, IB=20mA (Note 1) VCE(SAT)3 IC=800mA, IB=80mA Base-Emitter Voltage VBE(ON) VCE=1V, IC=10mA hFE1 VCE=1V, IC=100mA DC Current Gain hFE2 VCE=1V, IC=500mA hFE3 VCE=2V, IC=50mA Current Gain-Bandwidth Product fT VCE=5V, IC=50mA, f=100MHz Output Capacitance COBO VCB=10V, f=1MHz Note: 1. Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 40 V 32 V 6 V 0.5 µA 0.5 µA 40 60 mV 0.2 0.3 V 0.3 0.5 V 1 V 180 560 40 82 150 MHz 15 pF 2 of 3 QW-R218-017.b MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R218-017.b