RoHS MMDT2907A MMDT2907A D T ,. L TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage E Base-emitter saturation voltage J E Output Capacitance W Ic= -10µA, IE=0 MIN MAX UNIT -60 V Ic= -10mA, IB=0 -60 V IE=-10µA, IC=0 -5 V O VCB=-50V, IE=0 -0. 01 µA VEB= -3V, IC=0 -0. 01 µA VCE=-10V, IC= -0.1mA 75 hFE(2) VCE=-10V, IC= -1mA 100 hFE(3) VCE=-10V, IC=-10mA 100 hFE(4) VCE=-10V, IC= -150mA 100 hFE(5) VCE=-10V, IC=-500mA 50 VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V VCE(sat)2 IC=-500 mA, IB=- 50mA -1.6 V VBE(sat)1 IC=-150 mA, IB=-15mA -1.3 V VBE(sat)2 IC=-500 mA, IB= -50mA -2.6 V fT Cob Cib Input Capacitance N conditions hFE(1) C E L DC current gain Test R T Collector cut-off current Transition frequency unless otherwise specified) Symbol Collector-base breakdown voltage IC C O VCE=-20V, IC= -50mA f=100MHz VCB=-10V, IE= 0 f=1MHz VEB=-2V, IC= 0 f=1MHz 300 200 MHz 8 pF 30 pF 10 nS 40 nS Delay time td Rise time tr Storage time tS VCC=-6V, IC=-150mA 225 nS Fall time tf IB1= IB2= -15mA 60 nS Marking VCC=-30V, IC=-150mA, IB1=-15mA K2F WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMDT2907A Typical Characteristics MMDT2907A R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]