WINNERJOIN MMDT2907A

RoHS
MMDT2907A
MMDT2907A
D
T
,. L
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.15
W (Tamb=25℃)
Collector current
ICM:
-0.6
A
Collector-base voltage
V(BR)CBO:
-60
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturation voltage
E
Base-emitter saturation voltage
J
E
Output Capacitance
W
Ic= -10µA, IE=0
MIN
MAX
UNIT
-60
V
Ic= -10mA, IB=0
-60
V
IE=-10µA, IC=0
-5
V
O
VCB=-50V, IE=0
-0. 01
µA
VEB= -3V, IC=0
-0. 01
µA
VCE=-10V, IC= -0.1mA
75
hFE(2)
VCE=-10V, IC= -1mA
100
hFE(3)
VCE=-10V, IC=-10mA
100
hFE(4)
VCE=-10V, IC= -150mA
100
hFE(5)
VCE=-10V, IC=-500mA
50
VCE(sat)1
IC=-150 mA, IB=-15mA
-0.4
V
VCE(sat)2
IC=-500 mA, IB=- 50mA
-1.6
V
VBE(sat)1
IC=-150 mA, IB=-15mA
-1.3
V
VBE(sat)2
IC=-500 mA, IB= -50mA
-2.6
V
fT
Cob
Cib
Input Capacitance
N
conditions
hFE(1)
C
E
L
DC current gain
Test
R
T
Collector cut-off current
Transition frequency
unless otherwise specified)
Symbol
Collector-base breakdown voltage
IC
C
O
VCE=-20V, IC= -50mA
f=100MHz
VCB=-10V, IE= 0
f=1MHz
VEB=-2V, IC= 0
f=1MHz
300
200
MHz
8
pF
30
pF
10
nS
40
nS
Delay time
td
Rise time
tr
Storage time
tS
VCC=-6V, IC=-150mA
225
nS
Fall time
tf
IB1= IB2= -15mA
60
nS
Marking
VCC=-30V, IC=-150mA,
IB1=-15mA
K2F
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMDT2907A
Typical Characteristics
MMDT2907A
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]