Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13003-R
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR

DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.

FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability

APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003L-R-x-T92-B
MJE13003G-R-x-T92-B
MJE13003-L-R-x-T92-K
MJE13003G-R-x-T92-K
Note: Pin assignment: E: Emitter
B: Base
C: Collector

Package
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tape Box
Bulk
MARKING
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
Collector-Emitter Voltage
VCEO(SUS)
400
Collector-Base Voltage
VCBO
700
Emitter Base Voltage
VEBO
9
Continuous
IC
1.5
Collector Current
Peak (1)
ICM
3
Continuous
IB
0.75
Base Current
Peak (1)
IBM
1.5
Continuous
IE
2.25
Emitter Current
Peak (1)
IEM
4.5
TA=25°C
1.1
Power Dissipation
PD
TC=25°C
1.5
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT
V
V
V
A
A
A
W
W
°C
°C
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
VCEO(SUS)
TC=25°C
TC=100°C
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
ICEO
IEBO
IC=10mA , IB=0
VCEO=Rated Value,
VBE(OFF)=1.5 V
VEB=9V, IC=0
MIN TYP MAX UNIT
400
V
1
5
1
Is/b
See Fig.5
RBSOA
See Fig.6
fT
COB
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
tD
tR
tS
tF
VCC=125V, IC=1A, B1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
0.05
0.5
2
0.4
0.1
1
4
0.7
μs
μs
μs
μs
tSTG
tC
tF
IC=1A, VCLAMP=300V, IB1=0.2A,
VBE(OFF)=5VDC, TC=100°C
1.7
4
0.29 0.75
0.15
μs
μs
μs
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
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mA
14
5
Collector-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test: PW=300μs, Duty Cycle≤2%
mA
IC=0.5A, VCE=5V
IC=1A, VCE=5V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100°C
hFE1
hFE2
DC Current Gain
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TEST CONDITIONS
57
30
0.5
1
3
1
1
1.2
1.1
10
21
V
V
MHz
pF
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NPN SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
RANGE
A
14 ~ 22
B
21 ~ 27
C
26 ~ 32
D
31 ~ 37
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E
36 ~ 42
F
41 ~ 47
G
46 ~ 52
H
51 ~ 57
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APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Resistive
Switching
Reverse Bias Safe Operating Area and Inductive Switching
Test Circuits
+125V
Rc
TUT
RB
SCOPE
D1
Circuit Values
-4.0V
Coil Data :
VCC=20V
Ferroxcube core #6656
VCLAMP=300V
Full Bobbin ( ~ 200 Turns) #20
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
RC=47Ω
GAP for 30 mH/2 A
LCOIL=50mH
Output Waveforms
Test Waveforms

NPN SILICON TRANSISTOR
+10.3 V
25μS
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
Ic
Tc
tsv
tRV
tTI
(°C)
(μs)
tc
(A)
(μs)
tFI
(μs)
(μs)
(μs)
0.35 0.30
0.40 0.36
0.5
25
100
1.3
1.6
0.23 0.30
0.26 0.30
1
25
100
1.5
1.7
0.10
0.13
25
100
1.8
3
0.07 0.10 0.05 0.16
0.08 0.22 0.08 0.28
ICPK
VCLAMP
90% Ic
90% Vclamp
IC
tsv
tRV
tFI
tTI
tc
1.5
0.14 0.05 0.16
0.26 0.06 0.29
Note: All Data Recorded in the Inductive Switching
Circuit in Table 1
VCE
IB
90% IB1
10% VCLAMP 10%
ICPK 2% Ic
Time
Fig.1 Inductive Switching Measurements
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SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to switch mode power supplies
and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be
made on each waveform to determine the total switching time. For this reason, the following new terms have been
defined.
tSV = Voltage Storage Time, 90% IB1 to 10% VCLAMP
tRV = Voltage Rise Time, 10 ~ 90% VCLAMP
tFI= Current Fall Time, 90 ~ 10% IC
tTI = Current Tail, 10 ~ 2% IC
tC = Crossover Time, 10% VCLAMP to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this transistor are the inductive switching speeds (tC and tSV) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
10
2
7
Vcc=125V
Ic/IB=5
TJ=25°C
0.7
tR
Time, t (°C)
0.5
3
0.3
0.2
0.1
Vcc=125V
Ic/IB=5
TJ=25°C
ts
5
Time, t (°C)
1
tD @ VBE(OFF)=5V
0.07
2
1
0.7
0.5
tF
0.3
0.05
0.2
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
10
20
0.1
0.02 0.03
Collector Current, IC (A)
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1
2
Collector Current, IC (A)
Fig.3 Turn-Off Time
Effective Transient Thermal
Resistance, R(t) (Normalized)
Fig.2 Turn-On Time
Fig.4 Thermal Response
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NPN SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig.5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Fig.5.
TJ(PK) may be calculated from the data in Fig.4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
Collector Current, IC (A)
Collector Current, IC (A)
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as RBSOA( Reverse Bias
Safe Operating Area) and represents the voltage-current conditions during reverse biased turn-off. This rating is
verified under clamped conditions so that the device is never subjected to an avalanche mode. Fig.6 gives RBSOA
characteristics.
The Safe Operating Area of Fig.5 and 6 are specified ratings (for these devices under the test conditions shown.)
Fig.5 Active Region Safe Operating Area
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Fig.6 Reverse Bias Safe Operating Area
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TYPICAL CHARACTERISTICS

DC Current Gain
Collector Saturation Region
2
DC Current Gain, hFE
60
Collector-Emitter Voltage, VCE(V)
80
TJ=150°C
40
25°C
30
20
-55°C
1
0
8
VCE=2V
- - - - - -VCE=5V
6
4
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
TJ=25°C
1.6
Ic=0.1A 0.3A 0.5A
1.2
0.4
0
0.002
0.005 0.01
Base-Emitter Voltage
0.05
0.1
0.2
0.5
2
1
Collector-Emitter Saturation Region
0.35
VBE(SAT) @ IC/IB=3
- - - - - -VBE(ON) @ VCE=2V
1.2
0.3
Ic/IB=3
0.25
Voltage, V(V)
Voltage, V(V)
0.02
Base Current, IB (A)
1.4
TJ=-55°C
1
25°C
0.8
25°C
0.6
0.05 0.07 0.1
0.2
0.3
25°C
0.15
0.1
150°C
150°C
0.02 0.03
TJ=-55°C
0.2
0.05
0.5 0.7
1
0
0.02 0.03
2
0.05 0.07 0.1
Collector Current,IC (A)
Collector cut-off Region
4
Capacitance, C (pF)
TJ=150°C
125°C
100°C
1
0
2
TJ=25°C
300
10
10
1
Capacitance
VCE=250V
10
0.5 0.7
0.3
500
3
2
0.2
Collector Current, IC (A)
10
Collector Current, IC (μA)
1.5A
0.8
Collector Current,IC (A)
0.4
1A
75°C
50°C
CIB
200
100
70
50
30
20
10
-1
10
-0.4
7
5
FORWARD
REVERSE
-0.2
COB
10
25°C
0
+0.2
+0.4
+0.6
Base-Emitter Voltage, VBE (V)
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0.1 0.2 0.5
1
2
5
10 20
50
100 200 500
1000
Reverse Voltage, VR (V)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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