UNISONIC TECHNOLOGIES CO., LTD MJE13003K

UNISONIC TECHNOLOGIES CO., LTD
MJE13003K
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
„
DESCRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
„
FEATURES
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
„
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003KL-x-x-T60-K
MJE13003KG-x-x-T60-K
MJE13003KL-x-x-T6C-A-K
MJE13003KG-x-x-T6C-A-K
MJE13003KL-x-x-T6C-F-K
MJE13003KG-x-x-T6C-F-K
MJE13003KL-x-x-T92-B
MJE13003KG-x-x-T92-B
MJE13003KL-x-x-T92-K
MJE13003KG-x-x-T92-K
MJE13003KL-x-x-T92-R
MJE13003KG-x-x-T92-R
MJE13003KL-x-x-T9L-B
MJE13003KG-x-x-T9L-B
MJE13003KL-x-x-T9L-K
MJE13003KG-x-x-T9L-K
MJE13003KL-x-x-T9L-R
MJE13003KG-x-x-T9L-R
MJE13003KL-x-x-TM3-T
MJE13003KG-x-x-TM3-T
MJE13003KL-x-x-TN3-R
MJE13003KG-x-x-TN3-R
MJE13003KL-x-x-TN3-T
MJE13003KG-x-x-TN3-T
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
Package
TO-126
TO-126C
TO-126C
TO-92
TO-92
TO-92
TO-92L
TO-92L
TO-92L
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
E
C
B
B
C
E
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
Packing
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
Tape Reel
Tube
Tape Reel
Tube
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MJE13003K
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
RATINGS
UNIT
400
V
700
V
9
V
Continuous
1.5
Collector Current
A
Peak (1)
3
Continuous
0.75
Base Current
A
Peak (1)
1.5
Continuous
2.25
Emitter Current
A
Peak (1)
4.5
TO-126/ TO-126C
1.4
W
Total Power Dissipation (Ta=25°C)
PD
TO-92/ TO-92L
1.1
W
Total Power Dissipation (TC=25°C)
TO-252/ TO-251
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
VCEO(SUS)
VCBO
VEBO
IC
ICM
IB
IBM
IE
IEM
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NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
SYMBOL
TC=25°C
TC=100°C
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICEO
IEBO
IC=10 mA , IB=0
VCEO=Rated Value,
VBE(OFF)=1.5 V
VEB=9 V, IC=0
MIN TYP MAX UNIT
400
V
1
5
1
Is/b
See Figure 5
RBSOA
See Figure 6
IC=0.5A, VCE=5V
IC=1A, VCE=2V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCE(SAT)
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
VBE(SAT) IC=1A, IB=0.25A
IC=1A, IB=0.25A, TC=100°C
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Note: Pulse Test : PW=300μs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
hFE1
hFE2
fT
Cob
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
8
5
4
mA
mA
51
30
0.5
1
3
1
1
1.2
1.1
10
21
V
V
MHz
pF
tD
tR
tS
tF
VCC=125V, IC=1A, IB1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
0.05 0.1
0.5
1
2
4
0.4 0.7
μs
μs
μs
μs
tSTG
tC
tF
IC=1A, Vclamp=300V, IB1=0.2A,
VBE(OFF)=5Vdc, TC=100°C
1.7
4
0.29 0.75
0.15
μs
μs
μs
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CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
G
40 ~ 46
H
45 ~ 51
Table 1.Test Conditions for Dynamic Performance
Resistive
Switching
Reverse Bias Safe Operating Area and Inductive Switching
+5V
Vcc
33
1N4933
MJE210
L
Test Circuits
0.001μF
Circuit Values
MR826*
+125V
33 1N4933
5V
Pw
2N2222
1k
1k
DUTY CYCLE≦10%
tR, tF≦10ns
68
5.1k
IB
1k
1N4933
Vclamp
Ic
RB
+5V
Rc
*SELECTED FOR≣1kV
TUT
51
T.U.T.
D1
100
1/2W
Coil Data :
VCC=20V
Ferroxcube core #6656
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
-4.0V
MJE200
47
SCOPE
RB
VCE
2N2905
270
0.02μF
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
-VBE(OFF)
GAP for 30 mH/2 A
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
RC=47Ω
Lcoil=50mH
Output Waveforms
Test Waveforms
„
NPN SILICON TRANSISTOR
Ic
t1 Adjusted to
Obtain Ic
t
t1
VCE
tf
t
t2
Figure 1. Inductive Switching Measurements
ICPK
Vclamp
90% Ic
90% Vclamp
tRV
tsv
tFI
tTI
25μS
0
Test Equipment
Scope-Tektronics
475 or Equivalent
Lcoil(Icpk)
t1≒
Vcc
VCE or
Vclamp
TIME
IC
+10.3 V
tf CLAMPED
Ic(pk)
Lcoil(Icpk)
t2≒ Vclamp
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
Ic
AMP
Tc
°C
tsv
µs
tRV
µs
tFI
µs
tTI
µs
tc
µs
0.5
25
100
1.3
1.6
0.23
0.26
0.30
0.30
0.35
0.40
0.30
0.36
1
25
100
1.5
1.7
0.10
0.13
0.14
0.26
0.05
0.06
0.16
0.29
1.5
25
100
1.8
3
0.07
0.08
0.10
0.22
0.05
0.08
0.16
0.28
tc
VCE
IB
90% IB1
10% Vclamp 10%
Icpk 2% Ic
Time
UNISONIC TECHNOLOGIES CO., LTD
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NOTE: All Data Recorded in the Inductive Switching
Circuit in Table 1
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NPN SILICON TRANSISTOR
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each waveform to determine the total switching time. For this reason, the following new terms
have been defined.
tSV = Voltage Storage Time, 90% IB1 to 10% Vclamp
tRV = Voltage Rise Time, 10 ~ 90% Vclamp
tFI= Current Fall Time, 90 ~ 10% IC
tTI = Current Tail, 10 ~ 2% IC
tC = Crossover Time, 10% Vclamp to 10% IC
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
PSWT = 1/2 VCCIC (tC) f
In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented
specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which
are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
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NPN SILICON TRANSISTOR
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC≥25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5.
TJ(PK) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA
characteristics.
The Safe Operating Area of Figures 5 and 6 are specified ratings (for these devices under the test conditions
shown.)
Figure 5. Active Region Safe Operating Area
Figure 6. Reverse Bias Safe Operating Area
10
1.6
10μs
2
Collector Current, IC (A)
Collector Current, IC (A)
5
100μs
1
5.0 ms
dc
0.5
1.0 ms
Tc=25℃
0.2
Thermal Limit(Single Pule)
Bonding Wire Limit
Second Breakdown Limit
Curves Apply Below Rated
0.1
0.05
VCEO
1.2
VBE(OFF)=9V
TJ≦100℃
IB1=1A
0.8
0.4
5V
0.02
3V
1.5V
0.01
5
10
20
50
100
200 300
500
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
0
100
200
300
400
500
600
700
800
Collector-Emitter Clamp Voltage,VCE (V)
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TYPICAL CHARACTERISTICS
DC Current Gain
Collector Saturation Region
2
DC Current Gain, hFE
60
Collector-Emitter Voltage, VCE(V)
80
TJ=150℃
40
25℃
30
20
-55℃
1
0
8
VCE=2V
- - - - - -VCE=5V
6
4
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
2
TJ=25℃
1.6
Ic=0.1A 0.3A 0.5A
1.2
0.4
0
0.002
Base-Emitter Voltage
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1
2
Collector-Emitter Saturation Region
0.35
VBE(SAT) @ IC/IB=3
- - - - - -VBE(ON) @ VCE=2V
1.2
0.3
0.25
1
Voltage, V(V)
Voltage, V(V)
1.5A
Base Current, IB (A)
1.4
TJ=-55℃
25℃
0.8
25℃
0.6
0.4
1A
0.8
Collector Current,IC (A)
0.05 0.07 0.1
0.2
0.3
TJ=-55℃
0.2
25℃
0.15
0.1
150℃
150℃
0.02 0.03
Ic/IB=3
0.05
0.5 0.7
1
0
0.02 0.03
2
0.05 0.07 0.1
Collector Current,IC (A)
Collector cut-off Region
4
Capacitance, C (pF)
TJ=150℃
125℃
100℃
1
0
1
2
TJ=25℃
300
10
10
0.5 0.7
Capacitance
VCE=250V
10
0.3
500
3
2
0.2
Collector Current, IC (A)
10
Collector Current, IC (μA)
„
NPN SILICON TRANSISTOR
75℃
50℃
Cib
200
100
70
50
30
20
10
-1
10
-0.4
7
5
FORWARD
REVERSE
-0.2
Cob
10
25℃
0
+0.2
+0.4
+0.6
Base-Emitter Voltage, VBE (V)
UNISONIC TECHNOLOGIES CO., LTD
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0.1 0.2 0.5
1
2
5
10 20 50
100 200 500
1000
Reverse Voltage, VR (V)
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TYPICAL CHARACTERISTICS(Cont.)
100
80
P%
„
NPN SILICON TRANSISTOR
60
40
20
0
25
50
75
100
125
150
Ta (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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