UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE. FEATURES TO-220 1 * VCEO(SUS)= 400 V * Reverse bias SOA with inductive loads @ TC = 100℃ * Inductive switching matrix 2 to 4 Amp, 25 and 100℃ . . . tc @ 3A, 100℃ is 180 ns (Typ) * 700V blocking capability * SOA and switching applications information TO-220F *Pb-free plating product number: MJE13005L APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits ORDERING INFORMATION Order Number Normal Lead Free Plating MJE13005-TA3-T MJE13005L-TA3-T MJE13005-TF3-T MJE13005L-TF3-T MJE13005L-TA3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube (1)Packing Type (1)T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Emitter Current Continuous Peak (1) Continuous Peak (1) SYMBOL VCEO(SUS) VCBO VEBO Ic ICM IB IBM RATINGS 400 700 9 4 8 2 4 UNIT V V V A A A A Continuous IE 6 A 12 A Peak (1) IEM Total Power Dissipation at Ta=25℃ 2 W PD Derate above 25℃ 16 mW/℃ 75 W Total Power Dissipation at TC=25℃ PD Derate above 25℃ 600 mW/℃ Operating and Storage Junction Temperature Range TJ , TSTG -65 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10% SYMBOL θJA θJC MAX 62.5 1.67 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Tc=25℃, unless otherwise specified) PARAMETER *OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with Base Reverse Biased *ON CHARACTERISTICS (1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SYMBOL TEST CONDITIONS VCEO(SUS) Ic=10mA , IB=0 VCBO=Rated Value, VBE(OFF)=1.5 V ICBO VCBO=Rated Value, VBE(OFF)=1.5V, Tc=100℃ IEBO VEB=9V, Ic=0 TYP MAX 400 UNIT V 1 mA 5 1 mA Is/b See Figure 11 RBSOA See Figure 12 VCE(SAT) Ic=1A, VCE=5V Ic=2A, VCE=5V Ic=1A, IB=0.2A Ic=2A, IB=0.5A Ic=4A, IB=1A VBE (SAT) Ic=2A, IB=0.5A, Ta=100℃ Ic=1A, IB=0.2A Ic=2A, IB=0.5A 1 1.2 1.6 V V V Ic=2A, IB=0.5A, Tc=100℃ 1.5 V hFE1 hFE2 fT Cob Ic=500mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 10 8 60 40 0.5 0.6 1 4 65 V V V MHz pF 2 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time tD Rise Time tR Vcc=125V, Ic=2A, IB1=IB2=0.4A, tP=25µs, Duty Cycle≤1% Storage Time tS Fall Time tF * Pulse Test: Pulse Width=300µs, Duty Cycle≤2% MIN TYP MAX UNIT 0.025 0.3 1.7 0.4 0.1 0.7 4 0.9 µs µs µs µs Table 1.Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5V TEST CIRCUITS Vcc 33 1N4933 MJE210 L 0.001μF MR826* +125V 33 1N4933 5V Pw DUTY CYCLE≦10% tr, tf≦10ns 68 1k 2N2222 1N4933 Vclamp Ic RB 1k +5V 0.02μF NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 CIRCUIT VALUES RESISTIVE SWITHCING IB 1k 5.1k T.U.T. Rc TUT RB *SELECTED FOR≧1kV VCE SCOPE D1 51 -4.0V 2N2905 270 MJE200 47 100 1/2W Coil Data : FERROXCUBE core #6656 Full Bobbin ( ~ 16 Turns) #16 -VBE(off) GAP for 200μH/20 A Lcoil=200μH Vcc=20V Vclamp=300V Vcc=125V Rc=62Ω D1=1n5820 or Equiv. RB=22Ω TEST WAVEFORMS OUTPUT WAVEFORMS tf CLAMPED Ic tf UNCLAMPED＞t2 Ic(pk) t t1 tf t1= VCE VCE or Vclamp TIME t2 t UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw +10 V t1 Adjusted to Obtain Ic t2= Lcoil (Icpk) Vcc Lcoil (Icpk) Vclamp 25μS 0 Test Equipment Scope-Tektronics 475 or Equivalent -8V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic 3 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE Figure 1. Turn-On Time Figure 2. Turn-Off Time 1 10 Vcc=125V Ic/IB=5 TJ=25°С 0.5 2 0.2 Time, t (°С) Time, t (°С) tR Vcc=125V Ic/IB=5 TJ=25°С tS 5 0.1 0.05 tD @ VBE(OFF)=5V 1 0.5 tF 0. 3 0.2 0.02 0.01 0.04 0. 2 0.1 0.4 2 1 0.1 0. 04 4 0. 1 Collector Current, IC (A) 0.2 0.5 2 1 4 Collector Current, IC (A) Transient Thermal Resistance, r(t) (Normalized) Figure 3. Typical Thermal Response [ ZθJC(t)] 1 0.7 0.5 D=0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.03 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 P (PK) ZθJC(t )=r(t ) Rθ JC Rθ J C=1.67℃/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 Tj(pk) -TC =P(pk ) Zθ JC(t) 0.2 1 0.5 2 5 10 20 t1 t2 DUTY CYCLE, D=t1/t2 10 0 50 Time, t (ms) Figure 4. Forward Bias Safe Operating Area 20 0 1k Figure 5. Reverse Bias Switching Safe Operating Area 10 4 Vclamp Tc≧100℃ IB1 =2.0A 5 2 dc 1 500μs 5 ms Collector Current, IC(pk) (A) Collector Current, IC (A) 50 0 0. 5 1ms 0.2 0.1 0. 05 3 2 VBE(off)=9V 1 UTC MJE13005 5V 3V 0.02 UTC MJE13005 1.5V 0.01 5 7 10 20 30 50 70 100 200 500 300 0 0 100 200 300 400 500 600 700 800 400 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector-Emitter Clamp Voltage, VCE (V) 4 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR RESISTIVE SWITCHING PERFORMANCE Figure 6. Forward Bias Power Derating 1 SECOND BREAKDOWN DERATING Power Derating Factor 0.8 0.6 THERMAL DERATING 0. 4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC≥25℃. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 4 may be found at any case temperature by using the appropriate curve on Figure 6. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete RBSOA characteristics. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Figure 7. DC Current Gain Figure 8. Collector Saturation Region 100 2 DC Current Gain, hFE 50 Collector-Emitter Voltage, VCE (V) TJ=150℃ 70 25℃ 30 20 -55℃ 1 0 VCE=2V - - - - - -VCE=5V 7 5 0.04 0.06 0.1 0.2 0.4 0.6 1 2 TJ=25℃ 1.6 2A Ic=1A 0.4 0 4 0.03 0.05 0.1 Base-Emitter Voltage, VBE (V) VBE(SAT ) @ IC/IB=4 - - - - - -V BE(ON) @ VCE=2V TJ=-55℃ 25℃ 0. 7 25℃ 0. 5 150℃ 0.3 0.1 0. 2 0.4 0.6 0.5 0.7 1 2 3 Figure 10. Collector-Emitter Saturation Voltage 1 2 4 Collector-Emitter Saturation Voltage, VCE(SAT) (V) Figure 9. Base-Emitter Voltage 0.04 0.06 0.2 0.3 Base Current, IB (A) 1.3 0. 9 4A 0.8 Collector Current, IC (A) 1.1 3A 1.2 0.55 Ic/IB=4 0.45 TJ=-55℃ 0.35 25℃ 0. 25 0.15 150℃ 0.05 0.04 0.06 0.1 Collector Current, IC (A) 0.2 0.4 0.6 1 2 4 Collector Current, IC (A) Figure 11. Collector Cutoff Region Figure 12. Capacitance 10k 2k VCE=250V Cib Tj=150℃ 100 125℃ 10 100 ℃ 75℃ Capacitance, C (pF) Collector Current, IC (μA) 1k 1k 50℃ 700 500 300 200 100 70 1 50 25℃ Cob 30 REVERSE 0.1 -0.4 FORWARD 20 -0.2 0 +0.2 +0.4 +0. 6 Base-Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.3 0.5 1 3 5 10 30 50 100 300 Reverse Voltage, VR (V) 7 of 8 QW-R203-018,D MJE13005 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. 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