VS-HFA25TB60PbF, VS-HFA25TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and qualified according to JEDEC®-JESD47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AC BENEFITS • • • • • Base cathode 1 Cathode Available Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 3 Anode VS-HFA25TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the VS-HFA25TB60... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-220AC IF(AV) 25 A VR 600 V VF at IF 1.3 V trr typ. 23 ns TJ max. 150 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Maximum continuous forward current SYMBOL TEST CONDITIONS VR IF TC = 100 °C VALUES UNITS 600 V 25 Single pulse forward current IFSM 225 Maximum repetitive forward current IFRM 100 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 125 TC = 100 °C 50 -55 to +150 A W °C Revision: 14-Jul-15 Document Number: 94065 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF, VS-HFA25TB60-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 25 A Maximum forward voltage VFM IF = 50 A See fig. 1 IF = 25 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 - 1.3 1.7 UNITS V - 1.5 20 - 600 2000 - 55 100 pF - 8.0 - nH UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 23 - trr1 TJ = 25 °C - 50 75 trr2 TJ = 125 °C - 105 160 IRRM1 TJ = 25 °C - 4.5 10 IF = 25 A - 8.0 15 dIF/dt = 200 A/μs - 112 375 - 420 1200 IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C VR = 200 V ns A nC Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 250 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.0 A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 0.063” from case (1.6 mm) for 10 s Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) Weight 6.0 (5.0) Mounting torque Marking device Case style TO-220AC K/W g HFA25TB60 Revision: 14-Jul-15 Document Number: 94065 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF, VS-HFA25TB60-N3 Vishay Semiconductors 10 000 1000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.6 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.0 1.4 1.8 2.2 2.6 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM t1 0.1 Single pulse (thermal response) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 14-Jul-15 Document Number: 94065 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF, VS-HFA25TB60-N3 www.vishay.com 140 Vishay Semiconductors 1400 VR = 200 V TJ = 125 °C TJ = 25 °C 120 1200 1000 60 Qrr (nC) trr (ns) 100 80 IF = 50 A IF = 25 A IF = 10 A IF = 50 A IF = 25 A IF = 10 A 800 600 400 40 200 20 100 0 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 30 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/µs) 25 IF = 20 A IF = 25 A IF = 10 A 20 IRR (A) VR = 200 V TJ = 125 °C TJ = 25 °C 15 10 1000 IF = 50 A IF = 25 A IF = 10 A 5 0 100 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit Revision: 14-Jul-15 Document Number: 94065 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF, VS-HFA25TB60-N3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- HF A 25 TB 60 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (25 = 25 A) 4 5 - Package: TB = TO-220AC 4 6 - Voltage rating (60 = 600 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-HFA25TB60PbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tube VS-HFA25TB60-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model www.vishay.com/doc?95221 TO-220ACPbF TO-220AC-N3 www.vishay.com/doc?95224 www.vishay.com/doc?95068 www.vishay.com/doc?95468 Revision: 14-Jul-15 Document Number: 94065 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000