VS-HFA25TB60PbF, VS-HFA25TB60-N3 Datasheet

VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AC
BENEFITS
•
•
•
•
•
Base
cathode
1
Cathode
Available
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
3
Anode
VS-HFA25TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
TO-220AC
IF(AV)
25 A
VR
600 V
VF at IF
1.3 V
trr typ.
23 ns
TJ max.
150 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
SYMBOL
TEST CONDITIONS
VR
IF
TC = 100 °C
VALUES
UNITS
600
V
25
Single pulse forward current
IFSM
225
Maximum repetitive forward current
IFRM
100
Maximum power dissipation
Operating junction and storage temperature range
PD
TJ, TStg
TC = 25 °C
125
TC = 100 °C
50
-55 to +150
A
W
°C
Revision: 14-Jul-15
Document Number: 94065
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 μA
IF = 25 A
Maximum forward voltage
VFM
IF = 50 A
See fig. 1
IF = 25 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
Junction capacitance
CT
VR = 200 V
Series inductance
LS
Measured lead to lead 5 mm from package body
TJ = 125 °C, VR = 0.8 x VR rated
See fig. 2
See fig. 3
MIN.
TYP.
MAX.
600
-
-
-
1.3
1.7
-
1.5
2.0
-
1.3
1.7
UNITS
V
-
1.5
20
-
600
2000
-
55
100
pF
-
8.0
-
nH
UNITS
μA
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
SYMBOL
MIN.
TYP.
MAX.
trr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TEST CONDITIONS
-
23
-
trr1
TJ = 25 °C
-
50
75
trr2
TJ = 125 °C
-
105
160
IRRM1
TJ = 25 °C
-
4.5
10
IF = 25 A
-
8.0
15
dIF/dt = 200 A/μs
-
112
375
-
420
1200
IRRM2
TJ = 125 °C
Qrr1
TJ = 25 °C
VR = 200 V
ns
A
nC
Qrr2
TJ = 125 °C
dI(rec)M/dt1
TJ = 25 °C
-
250
-
dI(rec)M/dt2
TJ = 125 °C
-
160
-
MIN.
TYP.
MAX.
UNITS
-
-
300
°C
-
-
1.0
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
0.063” from case (1.6 mm) for 10 s
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
-
-
80
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
-
0.5
-
-
2.0
-
-
0.07
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Weight
6.0
(5.0)
Mounting torque
Marking device
Case style TO-220AC
K/W
g
HFA25TB60
Revision: 14-Jul-15
Document Number: 94065
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF, VS-HFA25TB60-N3
Vishay Semiconductors
10 000
1000
TJ = 150 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.6
1000
TJ = 125 °C
100
10
1
TJ = 25 °C
0.1
0.01
1.0
1.4
1.8
2.2
2.6
0
100
200
300
400
500
600
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
1
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
ZthJC - Thermal Response
10
1
PDM
t1
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 14-Jul-15
Document Number: 94065
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
140
Vishay Semiconductors
1400
VR = 200 V
TJ = 125 °C
TJ = 25 °C
120
1200
1000
60
Qrr (nC)
trr (ns)
100
80
IF = 50 A
IF = 25 A
IF = 10 A
IF = 50 A
IF = 25 A
IF = 10 A
800
600
400
40
200
20
100
0
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
30
10 000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
dI(rec)M/dt (A/µs)
25
IF = 20 A
IF = 25 A
IF = 10 A
20
IRR (A)
VR = 200 V
TJ = 125 °C
TJ = 25 °C
15
10
1000
IF = 50 A
IF = 25 A
IF = 10 A
5
0
100
100
100
1000
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
Document Number: 94065
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
25
TB
60
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (25 = 25 A)
4
5
-
Package:
TB = TO-220AC
4
6
-
Voltage rating (60 = 600 V)
7
-
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-HFA25TB60PbF
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-HFA25TB60-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?95221
TO-220ACPbF
TO-220AC-N3
www.vishay.com/doc?95224
www.vishay.com/doc?95068
www.vishay.com/doc?95468
Revision: 14-Jul-15
Document Number: 94065
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.

90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000