PD-95741 HFA25TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits 4 IF(AV) = 25A Qrr (typ.)= 112nC 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count VR = 600V VF(typ.)* = 1.3V CATHODE 3 ANODE 2 IRRM = 10A trr(typ.) = 23ns di(rec)M/dt (typ.) = 250A/µs Description International Rectifier's HFA25TB60 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC Absolute Maximum Ratings Parameter VR IF @ TC = 100°C IFSM IFRM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max Units 600 25 225 100 125 50 V -55 to +150 W A C * 125°C www.irf.com 1 10/19/04 HFA25TB60PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min Typ Max Units VBR Cathode Anode Breakdown Voltage 600 V VFM Max Forward Voltage IRM Max Reverse Leakage Current CT Junction Capacitance 1.3 1.7 1.5 2.0 1.3 1.7 1.5 20 600 2000 55 100 LS Series Inductance 8.0 V µA pF nH Test Conditions IR = 100µA IF = 25A See Fig. 1 IF = 50A IF = 25A, TJ = 125°C V R = VR Rated See Fig. 2 TJ = 125°C, VR = 0.8 x V R RatedD Rated V R = 200V See Fig. 3 Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Min Typ Max Units Reverse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Recovery Current See Fig. 11 & 12 During tb 23 50 75 ns 105 160 4.5 10 A 8.0 15 112 375 nC 420 1200 250 A/µs 160 Test Conditions IF = 1.0A, dif/dt = 200A/µs, VR = 30V TJ = 25°C TJ = 125°C IF = 25A TJ = 25°C TJ = 125°C VR = 200V TJ = 25°C TJ = 125°C dif/dt = 200A/µs TJ = 25°C TJ = 125°C Thermal - Mechanical Characteristics Parameter Tlead RthJC RthJA RthCS Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Wt Weight Mounting Torque Min Typ Max Units 300 1.0 80 °C K/W 12 10 g (oz) Kg-cm lbfin 0.5 2.0 0.07 6.0 5.0 0.063 in. from Case (1.6mm) for 10 sec Typical Socket Mount Mounting Surface, Flat, Smooth and Greased 2 www.irf.com HFA25TB60PbF 10000 Reverse Current - IR (µA) TJ = 150°C T = 125°C TJ = 150°C 1000 100 TJ = 125°C 10 1 TJ = 25°C 0.1 J A 0.01 T = 25°C J 0 10 100 200 300 400 500 600 Reverse Voltage - V R (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 1000 Junction Capacitance -CT (pF) Instantaneous Forward Current - IF (A) 100 A 1 0.6 1.0 1.4 1.8 2.2 2.6 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current A TJ = 25°C 100 A 10 1 10 100 1000 Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 PDM 0.10 t1 0.05 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) www.irf.com Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics 3 HFA25TB60PbF 140 VR = 200V TJ = 125°C TJ = 25°C 30 VR = 200V TJ = 125°C TJ = 25°C 120 25 80 Irr- ( A) trr- (nC) 100 I F = 50A I F = 50A 20 I F = 25A I F = 10A 15 I F = 25A I F = 10A 60 10 40 5 A 20 100 di f /dt - (A/µs) 1400 Fig. 6 - Typical Recovery Current vs. dif/dt 800 10000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C I F = 50A di (rec) M/dt- (A /µs) Qrr- (nC) 1000 1000 di f /dt - (A/µs) Fig. 5 - Typical Reverse Recovery vs. dif/dt 1200 A 0 100 1000 I F = 25A I F = 10A 600 I F = 50A 1000 I F = 25A I F = 10A 400 200 0 100 A di f /dt - (A/µs) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt 4 100 100 A 1000 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt www.irf.com HFA25TB60PbF 3 t rr IF REVERSE RECOVERY CIRCUIT tb ta 0 Q rr VR = 200V 2 I RRM 4 0.5 I RRM di(rec)M/dt 0.01 Ω 0.75 I RRM L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit www.irf.com 5 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and I RRM trr X IRRM Q rr = 2 5. di(rec)M/dt - Peak rate of change of current during t b portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions 5 HFA25TB60PbF TO-220AC Package Outline Dimensions are shown in millimeters (inches) TO-220AC Part Marking Information PART NUMBER EXAMPLE : T HIS IS A HFA06TB120 LOT CODE 1789 ASSEMBLED ON WW 19, 2001 IN THE ASS EMBLY LINE "C" INTERNAT IONAL RECTIF IER LOGO DATE CODE ASSE MBLY LOT CODE P = LE AD-F REE YEAR 1 = 2001 WEE K 19 LINE C PART NUMBE R EXAMPLE: THIS IS A HFA06T B120 LOT CODE 1789 ASS EMBLED ON WW 19, 2001 IN T HE AS SEMBLY LINE "C" INT ERNATIONAL RECT IFIE R LOGO DAT E CODE AS SEMBLY LOT CODE YEAR 1 = 2001 WEEK 19 P = LEAD-F REE Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 6 www.irf.com