IRF HFA25TB60PBF

PD-95741
HFA25TB60PbF
HEXFRED
Ultrafast, Soft Recovery Diode
TM
Features
•
•
•
•
•
•
BASE
CATHODE
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
4
IF(AV) = 25A
Qrr (typ.)= 112nC
2
1
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
VR = 600V
VF(typ.)* = 1.3V
CATHODE
3
ANODE
2
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250A/µs
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-220AC
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
Units
600
25
225
100
125
50
V
-55 to +150
W
A
C
* 125°C
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10/19/04
HFA25TB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
VBR
Cathode Anode Breakdown Voltage
600
V
VFM
Max Forward Voltage
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
1.3 1.7
1.5 2.0
1.3 1.7
1.5
20
600 2000
55 100
LS
Series Inductance
8.0
V
µA
pF
nH
Test Conditions
IR = 100µA
IF = 25A
See Fig. 1
IF = 50A
IF = 25A, TJ = 125°C
V R = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x V R RatedD Rated
V R = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M /dt1
di(rec)M /dt2
Min Typ Max Units
Reverse Recovery Time
See Fig. 5, 6 & 16
Peak Recovery Current
See Fig. 7& 8
Reverse Recovery Charge
See Fig. 9 & 10
Peak Rate of Fall of Recovery Current
See Fig. 11 & 12
During tb
23
50
75
ns
105 160
4.5
10
A
8.0
15
112 375
nC
420 1200
250
A/µs
160
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
IF = 25A
TJ = 25°C
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead
RthJC
RthJA‚
RthCSƒ
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
Mounting Torque
Min
Typ
Max
Units
300
1.0
80
°C
K/W
12
10
g
(oz)
Kg-cm
lbf•in
0.5
2.0
0.07
6.0
5.0
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased
2
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HFA25TB60PbF
10000
Reverse Current - IR (µA)
TJ = 150°C
T = 125°C
TJ = 150°C
1000
100
TJ = 125°C
10
1
TJ = 25°C
0.1
J
A
0.01
T = 25°C
J
0
10
100
200
300
400
500
600
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
1000
Junction Capacitance -CT (pF)
Instantaneous Forward Current - IF (A)
100
A
1
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
A
TJ = 25°C
100
A
10
1
10
100
1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.1
PDM
0.10
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
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Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics
3
HFA25TB60PbF
140
VR = 200V
TJ = 125°C
TJ = 25°C
30
VR = 200V
TJ = 125°C
TJ = 25°C
120
25
80
Irr- ( A)
trr- (nC)
100
I F = 50A
I F = 50A
20
I F = 25A
I F = 10A
15
I F = 25A
I F = 10A
60
10
40
5
A
20
100
di f /dt - (A/µs)
1400
Fig. 6 - Typical Recovery Current vs. dif/dt
800
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 50A
di (rec) M/dt- (A /µs)
Qrr- (nC)
1000
1000
di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1200
A
0
100
1000
I F = 25A
I F = 10A
600
I F = 50A
1000
I F = 25A
I F = 10A
400
200
0
100
A
di f /dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dif/dt
4
100
100
A
1000
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
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HFA25TB60PbF
3
t rr
IF
REVERSE RECOVERY CIRCUIT
tb
ta
0
Q rr
VR = 200V
2
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
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1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I RRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and I RRM
trr X IRRM
Q rr =
2
5. di(rec)M/dt - Peak rate of change of
current during t b portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
5
HFA25TB60PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBER
EXAMPLE : T HIS IS A HFA06TB120
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASS EMBLY LINE "C"
INTERNAT IONAL
RECTIF IER
LOGO
DATE CODE
ASSE MBLY
LOT CODE
P = LE AD-F REE
YEAR 1 = 2001
WEE K 19
LINE C
PART NUMBE R
EXAMPLE: THIS IS A HFA06T B120
LOT CODE 1789
ASS EMBLED ON WW 19, 2001
IN T HE AS SEMBLY LINE "C"
INT ERNATIONAL
RECT IFIE R
LOGO
DAT E CODE
AS SEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-F REE
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
6
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