VS-HFA25TB60PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS • • • • • Base cathode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION 1 Cathode 3 Anode VS-HFA25TB60PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A continuous current, the VS-HFA25TB60PbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-220AC PRODUCT SUMMARY Package TO-220AC IF(AV) 25 A VR 600 V VF at IF 1.7 V trr (typ.) 23 ns TJ max. 150 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 25 Single pulse forward current IFSM 225 Maximum repetitive forward current IFRM 100 Maximum power dissipation Operating junction and storage temperature range Document Number: 94065 Revision: 24-May-11 PD TJ, TStg TC = 25 °C 125 TC = 100 °C 50 - 55 to + 150 A W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 25 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 25 A Maximum forward voltage VFM IF = 50 A See fig. 1 IF = 25 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V LS Measured lead to lead 5 mm from package body Series inductance TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 - 1.3 1.7 UNITS V - 1.5 20 - 600 2000 - 55 100 pF - 8.0 - nH MIN. TYP. MAX. UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 and 16 Peak recovery current See fig. 7 and 8 Reverse recovery charge See fig. 9 and 10 Peak rate of fall of recovery current during tb See fig. 11 and 12 SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 - trr1 TJ = 25 °C - 50 75 trr2 TJ = 125 °C - 105 160 IRRM1 TJ = 25 °C - 4.5 10 IRRM2 TJ = 125 °C IF = 25 A - 8.0 15 Qrr1 TJ = 25 °C dIF/dt = 200 A/μs - 112 375 VR = 200 V - 420 1200 ns A nC Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 250 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.0 A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) 0.063” from case (1.6 mm) for 10 s Weight 6.0 (5.0) Mounting torque Marking device www.vishay.com 2 Case style TO-220AC K/W g HFA25TB60 For technical questions within your region, please contact one of the following: Document Number: 94065 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF 1000 10 000 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 25 A TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.6 1000 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1.0 1.4 1.8 2.2 2.6 0 VFM - Forward Voltage Drop (V) 94065_01 100 94065_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 94065_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM t1 0.1 Single pulse (thermal response) 0.01 0.00001 94065_04 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94065 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF Vishay Semiconductors 140 HEXFRED® Ultrafast Soft Recovery Diode, 25 A 1400 VR = 200 V TJ = 125 °C TJ = 25 °C 120 1200 1000 60 Qrr (nC) trr (ns) 100 80 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 50 A IF = 25 A IF = 10 A IF = 50 A IF = 25 A IF = 10 A 800 600 400 40 200 20 100 0 100 1000 dIF/dt (A/µs) 94065_05 Fig. 7 - Typical Stored Charge vs. dIF/dt 30 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C VR = 200 V TJ = 125 °C TJ = 25 °C IF = 20 A IF = 25 A IF = 10 A dI(rec)M/dt (A/µs) IRR (A) 20 dIF/dt (A/µs) 94065_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 25 1000 15 10 IF = 50 A IF = 25 A IF = 10 A 1000 5 0 100 94065_06 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt www.vishay.com 4 100 100 94065_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions within your region, please contact one of the following: Document Number: 94065 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 25 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94065 Revision: 24-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA25TB60PbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 25 A ORDERING INFORMATION TABLE Device code VS- HF A 25 TB 60 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (25 = 25 A) 4 5 - Package: TB = TO-220AC 4 6 - Voltage rating (60 = 600 V) 7 - PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95221 Part marking information www.vishay.com/doc?95224 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94065 [email protected], [email protected], [email protected] Revision: 24-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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