Ideal Diode Combines 200V Busses

Ideal Diode Combines 200V Busses
Mitchell Lee
As the power consumption of individual cards increases in rack-mounted
systems, current consumption necessarily follows suit. A point is reached
where the current delivered by the backplane becomes untenable, and the only
solution is to increase the bus voltage. This point has been reached in even
some 48V systems, leading to the use of bus voltages exceeding 100V.
The LTC4359 ideal diode controller is used
in 12V, 28V and 48V battery, vehicular,
line operated and solar power systems as
a blocking diode and diode OR, achieving
substantially lower power and voltage
loss than is possible with a conventional
diode. Its 100V absolute maximum rating
would seemingly preclude use in higher
voltage applications, but with the addition of a simple source follower clamp,
this limitation is easily overcome.
When power is first applied, Q1’s body
diode passes current to the output. Q3, a
600V depletion mode device, turns on and
connects the output voltage directly to the
LTC4359’s OUT pin. The IN and OUT pins
sense VSD across Q1 and drive the GATE pin
in an attempt to hold the MOSFET’s “forward” drop to 30mV. This condition is
maintained up to about 1.5A, beyond
which Q1 is driven fully on and the voltage drop is dictated by its 20mΩ RDS(ON).
If VSD is less than 30mV, such as might
be the case if the output is pulled up by
a second, higher supply, the LTC4359’s
GATE pin turns the MOSFET off and blocks
reverse current flow. If the input voltage drops significantly below the output,
Q3’s source-follower action protects the
(continued on page 31)
Figure 1. An LTC4359-based ideal diode for 200V busses
Figure 1 shows a 200V, 7A ideal diode
realized with the LTC4359. Two or more
of these circuits are used to OR multiple
busses. Q1 serves as the pass element. At
7A load current, Q1’s dissipation is 1W; this
beats a conventional rectifier by a factor of
5 to 10 and results in a substantial savings
in board area. The LTC4359 is powered by
a shunt regulator comprising D1, R1A and
R1B. The use of large value resistors
is made possible by the LTC4359’s low,
200µ A maximum supply current. With the
values shown, the control circuit operates
down to 50V input, and consumes about
200mW with a 200V input. If low voltage operation is not important, R1A and
R1B can be increased to 200kΩ, reducing
the total control circuit dissipation to
100mW, or about 10% of the circuit’s total
dissipation when operating with a 7A load.
30 | April 2014 : LT Journal of Analog Innovation
RSNUB
1k
CSNUB
0.47µF
D2
ES1G
Q1
INPUT
200V
(250V MAX)
CLOAD
OUTPUT
7A
Q3
D4
DDZ9699T
D1, D2, D3, D4: DIODES INC.
RSNUB: NIC COMPONENTS NRCP12 SERIES
Q1: INFINEON IPB200N25N3G
Q3: INFINEON BSS126
10M
IN SOURCE
10nF
D1
DDZ9699
12V
SHDN
GATE
LTC4359
VSS
R1A
100k
R1B
100k
OUT
D3
DDZ9702
15V
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The onboard Hot Swap controller and
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protect against faults and high voltage excursions, making the LTC2874
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its advantageous CGS /CRSS ratio, which
simplifies the gate drive requirements and·
precludes self-enhancement during Hot
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exceeded in high voltage systems where
circuit faults may impress the full supply across small, parasitic inductances.
Commutation spike energy is diverted
away from Q1 and stored in CSNUB,
then slowly dissipated by RSNUB.
Commutation spikes are clamped with a
simple diode reset snubber. Q1 is generously rated at 320mJ avalanche energy,
but the recommended peak avalanche
current is only 47A. This figure is easily
Maximum operating voltage is limited by Q1 to 250V. Q3 is rated to 600V.
Replacing Q1 with a suitable higher voltage unit and scaling R1A and R1B accordingly permits operation up to 600V. n
(LTC4359) continued from page 30)
LTC4359’s OUT pin by keeping it within
a few volts of the IN pin. Thus, it is Q3,
with help from the floating supply architecture of D1 and R1A /B, that permits
the 100V LTC4359 to operate comfortably at 200V. D3 is included to protect
against brief, dynamic conditions that
could otherwise damage Q3’s gate pin.
Q1, a 250V-rated component, is chosen
for its exceptional on-resistance of just
20mΩ. Another feature of this device is
April 2014 : LT Journal of Analog Innovation | 31