NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4W/°C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Single Pulsed Avalanche Energy (IAS = 50A, L = 260µH, Note 3), EAS . . . . . . . . . . . . . . . . . 320mJ Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C Maximum Thermal Resistance: Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75°C/W Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50°C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 3. This is a calculated value limited to TJ = +175°C. Note 4. ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C. Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS Test Conditions VGS = 0V, ID = 250µA ∆V(BR)DSS/ Reference to +25°C, ID = 1mA ∆TJ Min Typ Max Unit 60 − − V − 0.064 − V/°C − − 12 Ω Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 50A, Note 5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 − 4.0 V VDS = 25V, ID = 50A, Note 5 69 − − mhos VDS = 60V, VGS = 0 − − 25 µA VDS = 48V, VGS = 0V, TC = +150°C − − 250 µA VGS = 20V − − 100 nA VGS = −20V − − −100 nA VGS = 10V, ID = 50A, VDS = 48V − − 130 nC Forward Transconductance Drain−to−Source Leakage Current Gate−Source Leakage, Forward gfs IDSS IGSS Gate−Source Leakage, Reverse Total Gate Charge Qg Gate−Source Charge Qgs − − 28 nC Gate−Drain (“Miller”) Charge Qgd − − 44 nC Turn−On Delay Time td(on) − 12 − ns − 78 − ns td(off) − 48 − ns tf − 53 − ns Between lead, 6mm (0.25”) from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 3210 − pF Rise Time Turn−Off Delay Time Fall Time tr Internal Drain Inductance LD Internal Source Inductance LS VDD = 30V, ID = 50A, RG = 3.6Ω, VGS = 10V 10V, Note 5 Input Capacitance Ciss Output Capacitance Coss − 690 − pF Reverse Transfer Capacitance Crss − 140 − pF Source−Drain Diode Ratings and Characteristics Continuous Source Current IS (Body Diode) Note 6 − − 84 A Pulse Source Current ISM (Body Diode) Note 2 − − 330 A Diode Forward Voltage VSD TJ = +25°C, IS = 50A, VGS = 0V, Note 5 − − 1.3 V Reverse Recovery Time trr − 73 110 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 50A, di/dt = 100A/µs, Note 5 − 220 330 µC Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Width ≤ 400µs, Duty Cycle ≤ 2%. Note 6. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab