2014 10 24 3 IO-Link 1m DCR Kevin Wrenner / Juan-G. Aranda 16 µModule® / IO-Link® 24 12V/100A 26 Hot Swap™ LTC®2874 PHY 2 4 ® LT 3669 IO-Link LDO PHY IO-Link 29 IO-Link LTC2874 LT3669 IO-Link 1 IO-Link 2 2009 2013 IEC 61131-9 SDCI IEC 61131-2 LTC3882 POL 16 www.linear-tech.co.jp 2 4 2 COVER STORY 8 IO-Link Kevin Wrenner / Juan-G. Aranda 25 20 1 2 DESIGN FEATURES 1m DCR PolyPhase 2 16 James A. McKenzie DESIGN IDEAS 25 1989 LTspice IV 22 Gabino Alonso µModule® µModule 24 Jesus Rosales 12V/100A Hot Swap 26 Dan Eddleman Philip Karantzalis 29 new product briefs 31 back page circuits 32 1997/1998 2005 2 5 3 1000 IC 25 2 | 2014 10 LT Journal of Analog Innovation & Technik 20 Energy Efficient Semiconductors – How They Will Change RAID 1994 IC Our Lives – From Energy Harvesting to µModule EE Times China 20 ACE Award IoT, Smart Production, Smart Buildings, Smart Grids and Beyond – – 2 6 / LTC3300-1 40 µModule www.electronica.de/ Energy Harvesting & Storage Conference RF/ Wireless/ Microwave RF/ 1,500 IoT Power Semiconductor/ Voltage Converter Santa Clara Convention Center / 11 LTC5551 300MHz 3.5GHz 20 Best of Microwaves & RF Industry Award Microwaves & RF Dust Networks® Data Conversion/ Driver/ Clock / 19 L28 / LTC2378-20 20 SAR A/D Joy Weiss 1Msps Wireless Sensor Network Considerations for the Industrial Internet of Things (IoT) Best of Microwaves & RF Industry Awards 6 Best Technical Support 4F 402 10 17 James Noon Energy Harvesting:Battery Life Extension & Storage Web www.idtechex. com/energy-harvesting-usa/eh.asp www.dust-consortium.jp/ 2 Electronica 2014 EE Times China 11 ACE Award 9 China Messe München A4 EE Times 537 11 5 14 538 12 CTO 5 Bob Dobkin Steve Pietkiewicz A. Power Management LTM®4676 Kawamoto Product of the Year Award Joy Weiss 13A/ 26A 11 12 3:00 http://analog-guru.jp/ Markt µModule DC/DC EE Times China Power Management LTM4676 LTM4676 13A/ 26A µModule DC/DC Product of the Year Award 2014 10 LT Journal of Analog Innovation | 3 LTC2874 n MOSFET MOSFET Hot Swap L+ IC LTC2874/LT3669 1 MASTER 3 1 IO-Link PHY DEVICE L+ 24V C/Q DRV DRV ILL L– IO-Link PHY IO-Link 1 20m 3 M5 M8 2 L+ 3 IO-Link L– WURQ IO-Link 200mA 230.4kb/s COM3 38.4kb/s COM2 2 CQ IO- Wake-up Link 230.4kb/s L– 80µs 0.5A M12 DC24V Wake- up 4 IO-Link 4.8kb/s COM1 24V IO-Link 5 IO-Link SIO 11 2a IO-Link IO-Link UART Wake-up • IO-Link • IO-Link M-SEQUENCE (MESSAGE SEQUENCE) I/O SIO IO-Link MASTER SEQUENCE STOP BIT (SP) IO-Link START BIT (ST) SIO 0 CQ M 2b ILLM b0 b1 PARITY BIT (EVEN) b2 b3 b4 b5 b6 b7 P 1 UART FRAME UART FRAME • • • DEVICE MESSAGE UART FRAME UART FRAME DATA OCTET PNP H a 2 4 | 2014 10 LT Journal of Analog Innovation a IO-Link UART UART b 11 b M • • • UART FRAME 2 I/O DC24V LTC2874 3a RC M ? 3b LTC2874 LTC2874 n Hot Swap MOSFET MOSFET L+ LTC2874 MOSFET Hot Swap IO-Link L+ IC 200mA SPI L+ MOSFET MOSFET IO-Link Fairchild IO-Link FQT7N10 MOSFET LTC2874 Power over Ethernet 4 IO-Link POC SPI / 4W CG = 22nF RG = 10Ω LOAD = 10µF LOAD = 100µF L+1 FLDBK_MODE = 1 10V/DIV SPI L+1 L+2 L+2 L+3 L+3 10V/DIV L+4 L+4 LT3669 VOUT 2V/DIV FLDBK_MODE = 0 3.L+ a 4ms/DIV 20ms/DIV a b b GATE L+ 5V/DIV / 400µs/DIV c c 4V LT3669 2014 10 LT Journal of Analog Innovation | 5 IO-Link Wake-up LTC2874 LT3669 WURQ LTC2874 IRQ LT3669 SPI WURQ WAKE L 20V TO 34V 22V TO 34V SENSE+ LTC2874 D1: S100 Q1: FQT7N10 2XPTC = 0×0 (DEFAULT) 0.2Ω SENSE− D1 Q1 GATE SENSE+ LTC2874 SENSE− D1 200mA GUARANTEED CABLE <6Ω Q1 GATE L+ DEVICE D1: S100 Q1: FQT7N10 2XPTC = 0×1 (DISABLED) 0.08Ω 500mA GUARANTEED CABLE <6Ω L+ >18V DEVICE L– a 4 a IO-Link D1 b 200mA b 500mA 50ms >18V L– LTC2874 400mA MOSFET SOA DC MOSFET L+ 4b 200mA 4 LTC2874 IO-Link SPI 18V Wake-up IO-Link 5 a LT3669 CQ LTC2874 CQ1 80µs 500mA b LT3669 Wake-up LT3669 DEVICE RELEASES CQ1 SCK 5V/DIV WURQ WURQ WAKE 2V/DIV IRQ 5V/DIV 20µs/DIV LT Journal of Analog Innovation LTC2874 WURQ 5a IRQ CQ1 10V/DIV WAKE-UP DETECTED 40µs/DIV WURQ SPI b 16th PULSE 6 | 2014 10 LT3669 WURQ WURQ a CQ1 10V/DIV PHY LTC2874 IO-Link 24V LTC2874 EMI LT3669 CQ TXD1 10V/DIV CQ1 20V/DIV 20 AMPLITUDE (dBV) CQ2 20V/DIV TXD1 10V/DIV CQ3 20V/DIV CQ4 20V/DIV 5µs/DIV a b LTC2874 2 −40 20 0 0.0 CQ 1 3 b LT3669 7. LT3669 • 38.4kb/s EMI IO-Link H 30V L+ CQ1 500mA 24V • L EMI CQ1 LTC2874 2.95V TXEN1 200mA CQ DC100mA 2.95V L 2.0 L IO-Link H 1.6 LT3669 WAKE VL+ 0.8 1.2 FREQUENCY (MHz) CQ1 5b TXEN1 0.4 LT3669 75µs TXEN1 SLOW CQ1/Q2 Edge Rate (SR = L) −40 10µs/DIV 2 4 COM3 230.4kb/s COM2 COM3 −20 −20 CQ1 (SR = H) 10V/DIV 6. a 2 COM2 38.4kb/s FAST CQ1/Q2 EDGE RATE (SR = H) 0 CQ1 (SR = L) 10V/DIV LT3669 MOSFET CQ LTC2874 L TXD1 LT3669 WAKE IC LT3669 6 LT3669 7 LTC2874 L+ 50V GND CQ 50V WURQ IC 2014 10 LT Journal of Analog Innovation | 7 1 EMC LTC2874 ESD LT3669 8kV / 4kV TVS IEC 61000-4-2 ESD 8kV 4 6kV 3 DC1880A/DC1733A CPIN = 470pF IEC 61000-4-4 EFT/ 4kV 4kV 4 4 4kV 4kV 4 4 5kHz/15ms 100kHz/0.75ms 2kV 2 2kV 2 1.2/50µs 8/20µs IEC 61000-4-5 TVS SM6T36A L+ SM6T39A MOSFET CQ IC IO-Link L+ 4nF CQ LT3669 L+ IO-Link PHY LTC2874 LT3669 100mA LT3669 140 LTC2874 LDO DC12V VOUT SC1 250mA DC24V 5 SC2 IC IC LTC2874 LT3669 15 TVS LT3669 EMI L+ CQ1 Q2 1 GND 60V TVS 8 L+ a 12V 5W 36V LT3669 SC1 a SIO b RILIM = 42.2kΩ 12V/5W BULB VL+ = 12V RILIM = 42.2kΩ Q2 CQ1/Q2 5V/DIV CQ1 1V/DIV SC1 5V/DIV 2.2ms 0V SC1 5V/DIV SC2 5V/DIV 50ms/DIV 8 | 2014 10 b 470µF 2.95V IO-Link CQ1 LT3669 LT Journal of Analog Innovation 5ms/DIV SC2 IO-Link 4nF 100mA DC12V LTC2874 LT3669 LT3669 DC24V IO-Link PHY 250mA 24V CVDD2 1µF VDD CVDD1 100µF SENSE+ LTC2874 VL 2.9V TO 5.5V 4.7k IRQ VCC IRQ 2V/DIV 0.2Ω 4 0.2Ω 0.2Ω SENSE–1 SENSE–2 SENSE–3 SENSE–4 1µF 0.2Ω GATE1 RXDn 10Ω Q1 L+1 µC SPI CQ1 GATE2 10Ω Q2 L+2 CQ 10V/DIV CQ2 GATE3 10Ω Q3 L+3 100ms/DIV CQ3 a GATE4 TXENn b 10Ω Q4 L+4 TXDn CQ4 GND 9 a 24V 2W LTC2874 GND b 8 Q1 TO Q4: FQT7N10 LT3669 2 LT3669 500mA L 12V 5W 8a CQ1 Q2 SC1 10 LTC2874 4 SC2 CQ 8b LTC2874 TXD1 CQ1 TXD2 CQ2 TXD3 CQ3 TXD4 CQ4 GND DZ1 CQ 10V/DIV DZ1: SM6T36A D2: 1N4004 20m CABLE D2 2.95V EQUIVALENT 1.2H 47Ω −I(CQ) 200mA/DIV 200ms/DIV 2014 10 LT Journal of Analog Innovation | 9 LTC2874 LT3669 CQ L+ LTC2874 12V 24V CQ RXD SPI LTC2874 CQ L+ 8 LTC2874 12 SPI 24V DZ5 1µF VDD 1W TXD1 100µF SENSE+ 0.2Ω TXD2 VL 2.9V TO 5.5V SENSE–1 4.7k CQ SENSE–2 IRQ VCC 1µF 4 9a GATE1 RXDn DS2 10Ω D1–D4: 1N4004 DS1, DS2: FAIRCHILD S100 DZ1–DZ5: SM6T36A K1–K4: RELAYS Q1–Q4: FQT7N10 Q1 A L+1 SPI D1 LTC2874 CQ1 9b µC GATE2 DC DS1 LTC2874 L+ 8 0.2Ω 10Ω Q2 A L+2 10 K1 B D2 CQ2 K2 B A CQ3 D3 LTC2874 LT3669 TXENn TXD4 GND A CQ4 TXD3 D4 GND CQ Potter and Brumfield KRPA-11DG-24 2 CQ3 20V/DIV HIGH SIDE DRIVER CQ4 20V/DIV CQ1 20V/DIV CQ2 20V/DIV LOW SIDE DRIVER 100ms/DIV 10 | 2014 10 LT Journal of Analog Innovation K4 B DZ1–DZ4 11 Tyco K3 B LTC2874 13 L+ CQ LT3669 24V DZ5 100µF VDD L+1 20V/DIV + SENSE 0.2Ω L+2 20V/DIV SENSE–1 SPI 4 LTC2874 (1 OF 4 PORTS) GATE1 RXD1 DS1 10Ω Q1 DS1: FAIRCHILD S100 DZ1, DZ5: SM6T36A K1: RELAY Q1–Q4: FQT7N10 RXD1 5V/DIV L+1 CQ1 RXD2 5V/DIV A TXEN1 TXD1 K1 DZ1 100ms/DIV B GND Link SIO IO-Link RELAY SENSE L+ 24V COM3 / LTC2874 LT3669 12V PHY 24V 11 CQ 1.8V 5V 12 24V 3.3V 15V IO- LDO 5V 10mA LTC2874 L+ CQ 13 RXD 14 LT3669 IO-Link PHY SPI LTC2874 CQ L+ 8 2014 10 LT Journal of Analog Innovation | 11 LDO LT3669-2 15 LT3669-2 LDOIN 100mA 1.9W a b 33µH c SW D1 DIO BD FBOUT BST 0.22µF LT3669-2 53.6k 10.2k COUT 22µF DA VL+ L+ DIO LDOIN RT FBLDO 4.7µF LDO 4.42k 38.3k LT3669 1µF LT3669-2 AGND a LT3669-2 33µH SW LT3669-2 41.2k 24V VL+ COUT 22µF L+ DIO LDOIN RT FBLDO 4.7µF 423mW 69% 4V 10.2k DA 78% 100mA BD FBOUT BST 0.22µF D1 300mA LOGIC I/O GND LDO 14k 4.42k 38.3k 1µF 1 µC AGND LT3669 b 14 LOGIC I/O GND 3.3V 3.3V 225mW 8 5V 3.3V µC LDO 5V 14k TRANSDUCER 190mW TRANSDUCER LT3669 100mA 64% BD FBOUT BST 0.22µF SW D1 LT3669-2 31.6k 10.2k COUT 22µF DA LDO VL+ LT3669 L+ DIO LDOIN RT FBLDO 4.7µF LT3669-2 LDO 14k 4.42k 38.3k 1µF 3.3V µC AGND c 12 | 2014 10 LT Journal of Analog Innovation GND LOGIC I/O 3.3V TRANSDUCER 33µH LDO 150mA LDOIN 16 a 4 LTC2874 b 12 PHY LDO 2.25V 40V LDO 15 LDO 15a 15c 15b LDO DIO L+ LDO DIO L+ LDO IO-Link 16a PHY a QFN TSSOP LTC2874 12 b 16b 4 FIELDBUS UART SPI U1 U2 LTC2874 SPI TXEN1–4 L+1–4 TXD1–4 CQ1–4 RXD1–4 CS GND IRQ 12 TXEN1–4 TXD1–4 RXD1–4 SS0_0 IRQ0 µC UART FIELDBUS PHY ARM SPI0 SS1_0 SS2_0 3 U1 SPI CS IRQ TXEN1–4 TXD1–4 RXD1–4 12 IRQ1 DC2228A 17a DC2227A 8 IO-Link 4 PORTS 17b SPI1 SS0_1 SS1_1 3 U2 SPI CS IRQ TXEN1–4 TXD1–4 RXD1–4 12 IRQ2 LTC2874 SPI TXEN1–4 L+1–4 TXD1–4 CQ1–4 RXD1–4 CS GND IRQ LTC2874 SPI TXEN1–4 L+1–4 TXD1–4 CQ1–4 RXD1–4 CS GND IRQ 4 PORTS 4 PORTS U1, U2: PORT EXPANDER USING SAM4N (OR SIMILAR) NOTE: SHARED INTERRUPTS MIGHT LIMIT PERFORMANCE 2014 10 LT Journal of Analog Innovation | 13 IO-Link PHY QFN LTC2874 TSSOP b a 17.IO-Link b DC2227A LT3669-2 a DC2228A LTC2874 28V/100mA IEC 61131-2 8 90W Power over Ethernet LTPoE++™ IO-Link LTC2874 IO-Link LT3669 IO-Link IEC 61131-2 PLC IO-Link 18 LTC2874 4 LTC2874 I/O 4 6 LT3669 2 LT3669 LT3669 LDO 100mA LTC2874 1 5V 3.3V Q2 2 Q2 LDO LTC2874 8V 34V LT3669 7.5V 40V 2 24V n 14 | 2014 10 LT Journal of Analog Innovation LTC2874 LT3669 LTC2874 4 IO-Link LT3669 Q2 LDO 53.6k VOUT, IOUT** 5V, 100mA 2.9V TO 5.5V VL 10.2k 0.1µF 4.7k VDD 1µF 100µF SENSE+ 1µF SENSE–1 SDO GATE1 RXD1 TXEN1 TXD1 14k VLDO, ILDO** 3.3V, 100mA 20 METERS 0.2Ω SCK CS GND RT BST 4.42k SYNC LDO RST FBLDO SC1 AGND SC2 DIO 10Ω 200mA L+1 100mA CQ1 18 4 4 Q1: FQT7N10 SURGE PROTECTION NOT SHOWN *ADDITIONAL BYPASS CAP AS NEEDED L+ 100mA 1 5 33 1 2 2 3 100mA 4 4.7µF **IOUT(MAX), IS 100mA AND ILDO(MAX) IS 100mA (REMAINING AVAILABLE IOUT IS: 100mA – ILDO) 24V 3 1 Tsun-kit Chin / Dac Tran Combine power feed and data link via cable for remote peripherals EE Times 2011 11 10 2 www.io-link.com IO-Link Organization PNO 3 IEC 61131-9 4 Paul Schimel MOSFET Design Basics You Need To Know Part 1 and 2 Electronic Design 2010 4 4 4 21 5 Safely Light Miniature Incandescent Lamps Using LTC2874 Kevin Wrenner 2014 1 http://www.linear-tech.co.jp/solutions/4534 6 IEC 61131-2 Third edition 2007-07 WAKE EN/UVLO Q1 4 470pF 470pF VOUT OR VLDO SR LDOIN VOUT IRQ µC SW ILIM * SDI CPOR 0.1µF 38.3k 24V 82µH LT3669 0.1µF 1/4 LTC2874 BD FBOUT 10µF RXD1 µC TXEN1 Q2 TXD1 CQ1 TXEN2 GND TXD2 fSW = 600kHz tRST = 12.5ms 1 PROFIBUS User 1.0 2014 10 LT Journal of Analog Innovation | 15 DCR PolyPhase 1m James A. McKenzie PolyPhase® VIN 7V TO 14V 1Ω 330µF ×2 + 100nF VDD33 10k 4.99k 10k 10k 4.99k 10k VDD25 2.2µF 4.99k VCC 1µF VDD33 VDD25 VINSNS SCL ALERT GPIO0 RUN RUN1 SYNC 16.2k 17.4k 100pF LTC3882 COMP0 VOUT1_CFG FREQ_CFG PHAS_CFG IAVG0 7.32k 10nF Q2 220pF 1µF FB1 10nF 137Ω ISENSE1– 2.2µF VIN PHASE GH CGND GND BOOT VDRV ISENSE1+ TG1/PWM1 GND TG1_PWM1 PGND BG1/EN1 DrMOS: FAIRCHILD FD6802A 10Ω VIN 22µF ×2 VSENSE1+ IAVG1 LT Journal of Analog Innovation FDMF6820A PLACE Q1,Q2 NEAR L1, L2 RESPECTIVELY Q1 100pF VOUT0_CFG 16 | 2014 10 V 137Ω 10nF COMP1 90W 220pF 10nF TSNS0 TSNS1 ASEL1 1 DrMOS 7.32k ASEL0 IAVG_GND VIN PHASE GH CGND GND BOOT VDRV PGND FB0 SHARE_CLK VDD25 10Ω VSENSE0+ VSENSE0– RUN0 WP 22µF ×2 TG0_PWM0 ISENSE0– GPIO1 2.2µF VIN VCC TG0/PWM0 BG0/EN0 ISENSE0+ SDA 1µF INPUT SUPPLY +5V TO +12V 4.7µF FDMF6820A V LTC3882 PMBus PWM 4 LTC3882 DC/DC 0.5V 5.25V 8 LTC3882 PMBus DC/DC PWM LTC3882 0.5V 5.25V 4 LTC3882 8 6 8 III EEPROM 1 LTC3882 LTC3882 40 6mm 6mm QFN 1 5VBIAS +5V INPUT SUPPLY 2k 1µF VCIN SMOD PWM TG1_PWM0 DISB RUN L1 0.22µH PULSE VSWH CGND 1.21k GL 100µF ×4 + VOUT0 1.8V, 30A 470µF ×4 2 1 GND 0.22µF VOUT 20mV/DIV 45mV IOUT 10A/DIV 5VBIAS 15A 2k 50µs/DIV LOAD STEP = 0A TO 15A TO 0A di/dt = 15A/µs 1µF 0.22µF VCIN SMOD PWM TG1_PWM1 DISB RUN VSWH CGND GL 1.21k L2 0.22µH PULSE 100µF ×4 + VOUT1 1V, 40A 470µF ×4 GND 2014 10 LT Journal of Analog Innovation | 17 LTC3882 PWM 3.3V FET 5 PWM DrMOS 3 AVP 4 IOUT 10A/DIV VOUT 0.5V/DIV IL1, IL2 10A/DIV VOUT 50mV/DIV 200µs/DIV LTC3882 VIN = 12V 1ms/DIV 3V 38V 25:1 0 1 4 PolyPhase LTC3882 LTC3882 DC/ AVP ESR LTC3882 2 AVP PWM 3 LTC3882 250kHz 1.25MHz DC LTC3882 PWM 18 | 2014 10 LT Journal of Analog Innovation DCR LTC3882 16 A/D PMBus 5 DrMOS LTC3882 FDMF5820A 6 ISENSE 2 92 13 3500 8593 UNITS FROM 3 LOTS 3000 T = 38°C J CHO MASTER 2500 91 11 90 9 87 7 86 85 84 5 83 VIN = 12V VOUT = 1V SYNC = 500kHz 82 81 80 0 10 20 30 40 50 60 LOAD CURRENT (A) 70 80 NUMBER OF ICs 88 POWERLOSS (W) EFFICIENCY (%) 89 2000 1500 1000 3 500 1 0 –400 –300–200–100 0 100 200 300 400 CH1 ISENSE OFFSET TO IDEAL (µV) LTC3882 0.2% DC mV 2% DCR 0.5% 600mV 5V 7 PolyPhase PWM LTC3882 LTC3882 5 PWM PWM 3.3V DCR Fairchild FET FDMF5820A DrMOS DrMOS IAVG LTC3882 100pf 5 200pf LTC3882 COMP 16 A/D 6 DCR 2014 10 LT Journal of Analog Innovation | 19 PSM LTC3882 PMBus / LTC3882 100 PMBus 7 LTC3882 16 A/D PCB IOUT 20A/DIV PMBus VOUT 20mV/DIV LTC3882 EEPROM IL1, IL2 10A/DIV LTC3882 PMBus VOUT = 1V VIN = 12V SYNC = 500kHz L = 320nH EEPROM 5µs/DIV LTC3882 PSM LTC3880 LTC3882 LTC3882 ARA PSM ALERT LTC3882 PMBus LTC3882 / PMBus PMBus LTC3882 LTC3882 EEPROM 20 | 2014 10 / LTC3882 100 / LT Journal of Analog Innovation PMBus LTC3882 LTC3882 LTC3882 LTpowerCAD™ LTC3882 PC PSM PWM 8 FET LTspice® PCB DrMOS 16 A/D LTpowerPlay™ PSM GUI LTC3882 PC EEPROM PMBus LTC3882 PSM PMBus LTpowerPlay EEPROM ATE n / PMBus DC1936A www. linear-tech.co.jp 2014 10 LT Journal of Analog Innovation | 21 LTspice IV Gabino Alonso Modeling Safe Operating Area Behavior of N-Channel Dan Eddleman MOSFETs www.linear-tech.co.jp/solutions/5239 www.twitter.com/LTspice facebook.com/LTspice ! @LTspice LTspice LTspice www.linear-tech.co.jp/ solutions/LTspice Modeling Safe Operating Area Behavior of Dan Eddleman N-Channel MOSFETs www.linear-tech.co.jp/solutions/5239 Swap www.linear-tech.co.jp/democircuits Hot MOSFET SOA SOA LTspice SOAtherm- LTspice NMOS 4.5V 60V 3.3V/20A www.linear-tech.co.jp/LT3840 • LT8620 5V 2MHz 5.5V 65V 5V/2A www.linear-tech.co.jp/LT8620 MOSFET SOAtherm • LT3840 4.5V 15V 1.8V/600mA 3.3V/600mA www.linear-tech.co.jp/LTC3607 C SOAtherm/ LTspice • LTC3622 5V 17V 3.3V/1A 5V/1A www.linear-tech.co.jp/LTC3622 NMOS • LTC3875 LTC3874 1m DCR 4 4.5V 14V 1V/120A www.linear-tech.co.jp/LTC3875 LTspice IV LTspice® IV SPICE LTspice IV 6 80A 11V 13V 0.95V/80A www.linear-tech.co.jp/LTM4630 • LTM4630 SPICE SPICE SPICE 60V 6V 55V 48V/1A www.linear-tech.co.jp/LTC3769 • LTC3769 LTspice IV LTspice www.linear-tech.co.jp/ LTspice IV 200 MOSFET 22 | 2014 10 SOAtherm NMOS • LTC3607 MOSFET NMOS LTspice MOSFET LT Journal of Analog Innovation • LTM8058 LDO 2kV 4.3V 29V 5.7V/120mA 5V/120mA www.linear-tech.co.jp/LTM8058 LED • LT3796-1 LTC1541 100:1 SEPIC LED 8V 20V 35V www.linear-tech.co.jp/LT3796 • LT3797 1A LED 2.7V 40V 3x 50V LED 1A www.linear-tech.co.jp/LT3797 • LTC4120 800mA www.linear-tech.co.jp/LTC4120 VOUT1 VIN VIN 4.3V TO 29V • RUN VOUT1 5.7V VOUT2 LOW NOISE LDO • 2.2µF ADJ2 BYP VOUT– GND 22µF VOUT2 5V 10µF 162k BIAS LDO 2kV LTM8058 4.7µF 6.19k LTspice SS ADJ1 Edit Component LTM8058 2kVAC ISOLATION F2 LTspice Tools Release Sync LTspice • LT6119 POR • LTC3114-1 40V 1A DC/DC www.linear-tech.co.jp/LT6119-1 www.linear-tech.co.jp/LTC3114-1 • LTC3807 24V www.linear-tech.co.jp/LTC3807 • LTM4634 Hot Swap • LTC4231 5A/5A/4A DC/DC µModule www.linear-tech.co.jp/LTM4634 • LT8310 www.linear-tech.co.jp/LTC4231 100V www.linear-tech.co.jp/LT8310 1 LTspice Draw Wire n Duplicate F3 Duplicate F6 Ctrl + C Windows LTspice 2 ! 2014 10 LT Journal of Analog Innovation | 23 µModule Jesus Rosales µModule® 450 OUTPUT CURRENT (mA) 400 12V 2 µModule 2 350 300 250 200 2.5V 3.3V 5V 7.5V 10V 12V 150 100 50 UL60950 AC 2kV 1 LTM8057 0 LTM®8057 µModule LTM8058 1 LTM8046 LTM8047 20V 5V 1 300mA LTM8048 20V LTM8057 4 6 8 10 12 14 16 18 20 22 23 24 28 30 VIN (V) 10V/300mA 5V 1 2 12V 2 LTM8057 10V/300mA 2 7.5V 15V 15V 7.5V µModule VIN 5V TO 28V GND + CIN1 10µF 35V VIN RUN C1 10µF 50V C4 4.7µF 50V C6 0.1µF 25V R2 6.98k 1% C3 10µF 50V 2 LTM8057 µModule 10V 300mA 20V C8 4.7µF 50V 2 C7 0.1µF 25V R4 6.98k 1% 24 | 2014 10 LT Journal of Analog Innovation VOUT VOUT– BIAS 3 VOUT C210V 22µF 16V U1 LTM8057EY SS ADJ GND VOUT VIN RUN BIAS VOUT– C5 22µF 16V RTN U2 LTM8057 SS ADJ GND 3 15V 2 160mA LTM8057 µModule 12V μModule μModule 1 2 VIN 5V TO 28V 3 GND 2 5V + C1 10µF 50V 1210 CIN1 10µF 35V C4 4.7µF 50V –5V C6 0.1µF 25V R5 5.9k 1% LTM8058 LDO C14 4.7µF 50V VOUT2 10V 2 LTM8058 4 5 C9 0.1µF 25V 6 LDO 4 R7 5.9k 1% 10V/100mA C2 22µF 16V VOUT– BIAS U1 LTM8058 VOUT2 SS ADJ1 GND ADJ2 C3 10µF 16V R4 162k 1% VOUT1 C8 22µF 16V VOUT– BIAS VOUT2 10V C5 0.01µF 25V BYP VIN RUN C7 10µF 50V LDO VOUT1 VIN RUN U1 LTM8058 SS VOUT2 C15 0.01µF 25V BYP ADJ1 GND ADJ2 C16 10µF 16V RTN R10 162k 1% LTM8058 2 4 VOUT2 10V LTM8058 µModule LTM8057 LTM8058 μModule n 1 INTENSITY (dBm) μModule 0 0 –20 –20 –40 –40 INTENSITY (dBm) μModule –60 –80 –80 –100 –100 –120 –60 0 0.5 1 5 100mA 10V 2 1.5 2 2.5 3 3.5 4 FREQUENCY (MHz) LDO 4.5 5 –120 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (MHz) 4.5 5 6 100mA 10V LTM8058 2 2014 10 LTM8058 LT Journal of Analog Innovation | 25 12V/100A Hot Swap Dan Eddleman Hot Swap Hot Swap Hot Swap MOSFET Hot Swap PG LTC4218 H ISET TIMER R4 L MOSFET 100A PG L R4 3k R6 R7 MOSFET R4 SOA M3 M4 C4 3k ISET 13% LTC4218 Hot Swap 12V/100A 12V/100A RSENSE RESISTOR ARRAY 8x 1mΩ PARALLEL SENSE RESISTORS 8x PAIRS OF 1Ω RESISTORS RSENSE8 1mΩ Hot Swap 1000µF M2 100A 12V RSP8 1Ω IN OUT RSM8 1Ω RSENSE1 1mΩ ENABLE/RESET LTC4218 Hot Swap 1 RSP1 1Ω MOSFET M1 10Ω RSM1 1Ω 10Ω M2 100k SENSE– C1 12nF GATE SOURCE SENSE+ PG FB 1µF VDD Hot Swap PG M1, M2: IPT004N03L M3, M4, M5: 2N7002 R1 187k 1 TIMER FLT MOSFET 26 | 2014 10 LT Journal of Analog Innovation 1 12V/100A Hot Swap C4 1nF IMON R5 20k C2 0.1µF PG ISET R4 3k LTC4218 LTC4218GN OV R3 20k 10 20k UV R2 3.65k RESET L C6 1000µF 150k R8 1k 100A PG LOAD M1 M4 GND INTVCC R6 20k C4 1nF M3 R7 20k ENABLE/RESET M5 M1 RSENSE IN LTC4218 OUT SENSE− 15mV R1 100A SENSE+ 0.15m LTC4218 Hot Swap 1 IC C 2 1 2 LTC4218 24µA C1 LTC4218 MOSFET SENSE+ MOSFET M1 SENSE PCB M2 2 2V/ms PG MOSFET 100A 1 C6 Hot Swap 1000µF 100A 1m 1 2V/ms 1000µF • (2V/ms)=2A 8 MOSFET 2 1m 2 I R = (100A) • 1m = 10W R4 8 • (15mV/1m ) = 120A 50A 100A MOSFET I2R = (50A)2 • 1m 16A = 2.5W 13% 3 8 LTC4218 MOSFET M1 M2 IN IN MOSFET SOA M2 MOSFET RSP4 SENSE / RSENSE8 RSENSE4 M1 + RSM4 SENSE− M2 MOSFET RSP3 SOA RSM3 RSP7 RSP2 RSM2 M1 RSP6 SENSE+ RSM7 RSM6 RSENSE5 RSENSE1 RSP1 RSM8 RSENSE6 RSENSE2 MOSFET − RSENSE7 RSENSE3 SOA RSP8 SENSE RSM1 RSP5 2014 10 RSM5 LT Journal of Analog Innovation | 27 Hot Swap MOSFET 12V/100A LTC4218 Hot Swap 2 5 2 LTC4218 MOSFET M1 M2 1 100ms Hot Swap LTC4218 4 16A 100 50% ENABLE/ MOSFET M1 RESET H 100A M2 ENABLE/RESET 4V M5 R10 ON 1 12V Hot Swap 4 12V LTC4218 1000µF 2V/ms ENABLE/RESET H 1m MOSFET MOSFET M1 M2 100A 12V/100A LTC4218 Hot 12V/100A SENSE+ 8 SENSE + 1 LTC4218 SENSE 1 Swap n 1m SENSE 1m 8 1m 3 VIN 5V/DIV VOUT 5V/DIV VIN VOUT VIN 5V/DIV VOUT 5V/DIV PG 5V/DIV PG 5V/DIV IIN 50A/DIV IIN 10A/DIV 20µs/DIV 4 28 | 2014 10 LT Journal of Analog Innovation VIN VOUT 20µs/DIV 5 Philip Karantzalis LT6110 / LT6110 LT6110 / IIOUT 1 RFA / 1 LT6110 2 1 LT6110 1 20m LT6110 RSENSE ILOAD IIOUT 10µA 1mA VDROP 2 RSENSE 3A RSENSE RSENSE DC 5A PCB RSENSE LT6110 IMON IIOUT 5A IMON RFA LT3080 ILOAD 25m 140m RSENSE 825mV 0A ≤ ILOAD ≤ 5A IIOUT VLOAD VDROP LT6110 1 20 18 AWG IIOUT RIN / 3A ILOAD VSENSE 3.3V 5A • RFA / IIOUT 825mV 2 VIN IN OUT REGULATOR FB ILOAD VREG VFB I+IN RFA + – +IN V+ RSENSE 20mΩ RG IIOUT CLOAD VSENSE RIN RFB RWIRE IOUT IMON LT6110 RS VLOAD REMOTE LOAD –IN + – V– 2014 10 LT Journal of Analog Innovation | 29 PCB LT6110 VIN 5V TO 40V 10µF RWIRE RSENSE VIN OUT EN BOOST SS SW LT3976 100k PDS540 VREG 2Ω 100µF 10k 470pF RT 0.01µF VISHAY IHLP4040DZE 6.8µH 0.47µF FB SYNC GND VFB 1.197V 340k 180pF 200k 8 1 +IN NC 2 7 EN V+ LT6110 3 6 IMON RS 4 GND –IN 1.5k 0.1µF 5 VISHAY VSL2512R0250F RWIRE 140mΩ 20 FT, 18AWG 2 LT6110 IIOUT / 3.3V 5A RFA LT6110 LT6110 RIN IIOUT IIOUT RWIRE 100µA IIOUT 30µA 300µA 1% 2 2 10k / LT6110 6µA VFB/200k RFA / RIN 2 IIOUT • RFA = 825mV RSENSE RWIRE LT6110 25% VLOAD 6.25% IIOUT = VSENSE/RIN IIOUT • RFA = VDROP RIN = RFA • PCB RSENSE RSENSE • R WIRE RFA = 10k RSENSE = 25m RWIRE = 140m RIN = 1.5k / ∆ VLOAD • 140m ) 21.2% VLOAD 25 700mV (5 3.3V LT6110 50mV ∆ 1.5% 1 30 | 2014 10 LT Journal of Analog Innovation RWIRE RSENSE LT6110 LT6110 RWIRE RSENSE ∆ VLOAD n VLOAD 3.3V 220µF LOAD 5A USB µModule USB 2.0 Full Speed 12Mbps LTC2668 6mm 6mm QFN Low Speed 1.5Mbps LTM2884 USB USB VBUS USB µModule 2.0mA 5 SoftSpan LTC2668 2.5W LTM2884 DAC 50% DC/DC USB 16 5V VBUS 1W 10ppm/ USB LTM2884 LTM2884 1 15mm RoHS 16:1 µModule LTM2884 30kV/µs 0 –40 LTM2884 EMI 5mm BGA USB 2500VRMS 15mm 2.5V 70 –40 LTC2668 85 AC 105 DC/DC LTC2668 USB / 2.5W LTM2884 / / 10mA 16 DAC 1000pF 16 16 10V SoftSpan 16 D/A 1 LTM2884 125 LTC2668 DC2025A www.linear- tech.co.jp/demo DAC Linduino™ 10mA DC2026A 1000pF LTM2884 www.linear-tech.co.jp/ LTC2668 USB LTC2668 www.linear-tech.co.jp/ solutions/linduino µModule 12 –40 10V 5 USB 2.0 16 SoftSpan™ DAC 2500VRMS 1.8V 5V SPI LTC2668 LTC2668-16 A/B PLC MRI n X LTM2884 USB 15kV ESD 2014 10 LT Journal of Analog Innovation | 31 circuits.linear-tech.co.jp VIN 12V 10µF 16V VIN 15.3µH SYNC 255k SWA UVLO • • • • 10µF 16V OVLO/DC RDC 10k LT3999 15.8k VOUT 12V 0.8A LT3999 12V LT®3999 /12V 10W DC/DC DC/DC www.linear-tech.co.jp/solutions/5377 SWB RT ILIM/SS RBIAS 28k 500kHz 0.1µF 49.9k GND RSNS 0.2Ω VIN 2.7V TO 5.8V LTC2946 ADIN LTC®2946 SENSE+ 100V 0V 100V 12 A/D ADR1 C2 0.1µF LTC2946 ACCUMULATE SCL SDAI SDA 3.3V GPIO1 CLKIN GP OUTPUT C4 33pF X1: ABLS-4.000MHz-B2-T POWER FOR REVERSE PATH = CODEADIN × CODEVDD TO BE PERFORMED BY µP CA[7] = 1, SEE TABLE 3 VIN 12.5V TO 38V CIN 22µF INTVCC LTC3807 LTC®3807 100k VIN PGOOD LTC3807 RUN 2.2µF PGND ILIM VOUT 60.4k 4.7nF 15.4k 47pF 10A N D1 EXTVCC PLLIN/MODE 12V MOSFET DC/DC 750kHz www.linear-tech.co.jp/solutions/5396 INTVCC MTOP TG 0.1µF BOOST L1 4.7µH SW FREQ RSENSE 5mΩ + MBOT BG ITH COUT 180µF VOUT 12V 10A 10µF SENSE+ 0.1µF TRACK/SS 1nF SENSE– SGND SGND 1M VFB 71.5k MTOP, MBOT: RJK0452 L1 WÜRTH 7443320470 COUT: SANYO 16SVP150M D1: DFLS1100 L LT LTC LTM Linear Technology Linear LTPowerPlay Dust Networks LTspice PolyPhase µModule SoftSpan 102-0094 TEL. 03(5226)7291 FAX. 03(5226)0268 550-0011 1-6-13 TEL. 06(6533)5880 FAX. 06(6543)2588 460-0002 TEL. 052(955)0056 FAX. 052(955)0058 Hot Swap Linduino LTPoE++ LTPowerCAD © 2014 Linear Technology Corporation 3-6 8F 10F 3-20-22 KT VDD µP INT GND R4 2k CLKOUT C3 X1 33pF I 2C www.linear-tech.co.jp/solutions/5393 ALERT GPIO3 GPIO2 1% R3 2k SCL GND LTC2946 R2 2k SDAO ADR0 0.6% R1 2k SENSE– INTVCC VDD 2.7V 100V 3.3V VOUT 0.5A 7F www.linear-tech.co.jp