GBPC12, GBPC15, GBPC25, GBPC35 Datasheet

GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
GBPC-W
GBPC
FEATURES
~
• UL recognition file number E54214
• Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
~
• Typical IR less than 0.3 μA
• High surge current capability
~
• Low thermal resistance
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.
~
PRIMARY CHARACTERISTICS
MECHANICAL DATA
Package
GBPC, GBPC-W
IF(AV)
12 A, 15 A, 25 A, 35 A
VRRM
50 V to 1000 V
IFSM
200 A, 300 A, 300 A, 400 A
IR
5 μA
VF at IF
1.1 V
TJ max.
150 °C
Diode variations
Quad
Case: GBPC, GBPC-W
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Nickel plated on faston lugs or silver plated on
wire leads, solderable per J-STD-002 and JESD22-B102.
Suffix letter “W” added to indicate wire leads
(e.g. GBPC12005W).
Polarity: As marked, positive lead by beveled corner
Mounting Torque: 20 inches-lbs. max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GBPC12, 15, 25, 35
005
01
02
04
06
08
10
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified
output current (Fig. 1)
Peak forward surge current single
sine-wave superimposed on rated load
Rating (non-repetitive, for t greater than
1 ms and less than 8.3 ms) for fusing
GBPC12
12
GBPC15
15
GBPC25
IF (AV)
GBPC35
35
GBPC12
200
GBPC15
GBPC25
IFSM
300
300
GBPC35
400
GBPC12
160
GBPC15
GBPC25
I2t
GBPC35
RMS isolation voltage from case to leads
Operating junction storage temperature range
Revision: 21-Feb-14
25
375
375
V
A
A
A2s
660
VISO
2500
V
TJ, TSTG
- 55 to + 150
°C
Document Number: 88612
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST
CONDITIONS
PARAMETER
Maximum instantaneous
forward drop per diode
GBPC12
IF = 6.0 A
GBPC15
IF = 7.5 A
GBPC25
IF = 12.5 A
GBPC35
SYMBOL
GBPC12, 15, 25, 35
005
01
02
04
06
08
10
1.1
VF
UNIT
V
IF = 17.5 A
TA = 25 °C
Maximum reverse DC current at rated
DC blocking voltage per diode
TA = 125 °C
Typical junction capacitance per diode
4 V, 1 MHz
5.0
IR
μA
500
300
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GBPC12 to GBPC25
Typical thermal resistance
GBPC35
GBPC12, 15, 25, 35
005
01
02
04
06
08
10
UNIT
1.9
RJC (1)
°C/W
1.4
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GBPC1206-E4/51
15.79
51
100
Paper box
GBPC1506-E4/51
15.79
51
100
Paper box
GBPC2506-E4/51
15.79
51
100
Paper box
GBPC3506-E4/51
15.79
51
100
Paper box
GBPC1206W-E4/51
13.8
51
100
Paper box
GBPC1506W-E4/51
13.8
51
100
Paper box
GBPC2506W-E4/51
13.8
51
100
Paper box
GBPC3506W-E4/51
13.8
51
100
Paper box
Revision: 21-Feb-14
Document Number: 88612
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Bridges Mounted on
9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate
35
30
Peak Forward Surge Current (A)
Average Forward Current (A)
40
5 x 6 x 4.9"
AL, Finned Plate
25
20
5 x 4 x 3"
AL, Finned Plate
15
6 x 2.2 x 2.2"
AL, Finned Plate
10
60 Hz
Resistive or
Inductive Load
5
GBPC35
100
GBPC12
GBPC15
GBPC25
1.0 Cycle
0
10
0
25
50
75
100
125
150
175
200
10
1
Number of Cycles at 60 Hz
Fig. 1 - Maximum Output Rectified Current
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
GBPC35
RthSA = 0.5 °C/W
30
60 Hz
Resistive or
Inductive Load
Instantaneous Forward Current (A)
35
GBPC25
RthSA = 0.5 °C/W
25
20
GBPC15
RthSA = 1.0 °C/W
15
10
GBPC12
RthSA = 1.0 °C/W
5
0
10
20
30
40
50
60
70
80
90
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
TA = 25 °C
1
0.1
0.4
0
100
0.5
0.6
0.8
0.7
0.9
1.0
1.1
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Fig. 2 - Maximum Output Rectified Current
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
1000
80
70
Instantaneous Reverse Leakage
Current (µA)
Average Power Dissipation of Bridge (W)
100
Case Temperature (°C)
100
40
Average Forward Current (A)
TJ = TJ Max.
0.5 ms Single Sine-Wave
Capacitive Load
60
TJ = TJ Max.
50
40
Resistive or
Inductive Load
30
20
10
TA = 150 °C
TA = 125 °C
100
TA = 100 °C
10
1
TA = 25 °C
0.1
0
0
10
20
30
40
0
10
20
30
40
50
60
70
80
90
100
Average Output Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Power Dissipation
Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
Revision: 21-Feb-14
Document Number: 88612
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
www.vishay.com
Vishay General Semiconductor
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
100
10
1
0.01
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1
0.1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 7 - Typical Junction Capacitance Per Diode
Fig. 8 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GBPC-W
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
1.135 (28.8)
1.115 (28.3)
0.24 (6.0)
0.18 (4.6)
0.042 (1.07)
0.038 (0.97)
DIA.
0.310 (7.87)
0.290 (7.36)
Revision: 21-Feb-14
GBPC
0.24 (6.0)
0.18 (4.6)
0.732 (18.6)
0.692 (17.6)
0.470 (11.9)
0.430 (10.9)
0.50 (12.7)
0.44 (11.7)
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
0.672 (17.1)
0.632 (16.1)
0.672 (17.1)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
AC
0.582 (14.8)
0.542 (13.8)
0.034 (0.86)
0.030 (0.76)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
1.25
(31.8)
MIN.
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.030 (0.76)
0.310 (7.87)
0.290 (7.36)
0.25
(6.35)
0.840 (21.3)
0.740 (18.8)
Document Number: 88612
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000