GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier GBPC-W FEATURES GBPC • UL recognition file number E54214 ~ • Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting ~ • Typical IR less than 0.3 μA • High surge current capability ~ • Low thermal resistance ~ ~ • Solder dip 260 °C, 40 s • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS ~ General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 12 A, 15 A, 25 A, 35 A VRRM 50 V to 1000 V IFSM 200 A, 300 A, 300 A, 400 A IR 5 μA VF 1.1 V TJ max. 150 °C Case: GBPC, GBPC-W Epoxy meets UL 94 V-0 flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads, solderable per J-STD-002 and JESD22-B102. E4 suffix for consumer grade. Suffix letter “W” added to indicate wire leads (e.g. GBPC12005W). Polarity: As marked, positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GBPC12, 15, 25, 35 UNIT 005 01 02 04 06 08 10 100 200 400 600 800 1000 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V 12 GBPC12 Maximum average forward rectified output current (Fig. 1) Peak forward surge current single sine-wave superimposed on rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing GBPC15 GBPC25 IF (AV) 25 GBPC35 35 GBPC12 200 GBPC15 GBPC25 IFSM 300 300 GBPC35 400 GBPC12 160 GBPC15 GBPC25 I2t GBPC35 RMS isolation voltage from case to leads Operating junction storage temperature range Document Number: 88612 Revision: 28-Mar-11 15 375 375 A A A2s 660 VISO 2500 V TJ, TSTG - 55 to + 150 °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward drop per diode GBPC12 IF = 6.0 A GBPC15 IF = 7.5 A GBPC25 IF = 12.5 A GBPC35 IF = 17.5 A Maximum reverse DC current at rated DC blocking voltage per diode TA = 25 °C Typical junction capacitance per diode 4 V, 1 MHz TA = 125 °C GBPC12, 15, 25, 35 SYMBOL UNIT 005 01 02 04 06 08 10 1.1 VF V 5.0 IR μA 500 300 CJ pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) GBPC12, 15, 25, 35 PARAMETER SYMBOL UNIT 005 GBPC12 to GBPC25 Typical thermal resistance GBPC35 01 02 04 06 08 10 1.9 RJC (1) °C/W 1.4 Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE GBPC1206-E4/51 15.79 51 100 Paper box GBPC1506-E4/51 15.79 51 100 Paper box GBPC2506-E4/51 15.79 51 100 Paper box GBPC3506-E4/51 15.79 51 100 Paper box GBPC1206W-E4/51 13.8 51 100 Paper box GBPC1506W-E4/51 13.8 51 100 Paper box GBPC2506W-E4/51 13.8 51 100 Paper box GBPC3506W-E4/51 13.8 51 100 Paper box www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88612 [email protected], [email protected], [email protected] Revision: 28-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1000 Bridges Mounted on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) AL, Finned Plate 35 30 Peak Forward Surge Current (A) Average Forward Current (A) 40 5 x 6 x 4.9" AL, Finned Plate 25 20 5 x 4 x 3" AL, Finned Plate 15 6 x 2.2 x 2.2" AL, Finned Plate 10 60 Hz Resistive or Inductive Load 5 100 GBPC12 GBPC15 GBPC25 10 0 25 50 75 100 125 150 175 200 10 1 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Maximum Output Rectified Current Fig. 4 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode 100 GBPC35 RthSA = 0.5 °C/W 35 30 60 Hz Resistive or Inductive Load Instantaneous Forward Current (A) 40 Average Forward Current (A) GBPC35 1.0 Cycle 0 GBPC25 RthSA = 0.5 °C/W 25 20 GBPC15 RthSA = 1.0 °C/W 15 10 GBPC12 RthSA = 1.0 °C/W 5 0 10 20 30 40 50 60 70 80 90 TA = 150 °C TA = 125 °C 10 TA = 100 °C TA = 25 °C 1 0.1 0.4 0 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Maximum Output Rectified Current Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode 1000 80 70 Instantaneous Reverse Leakage Current (µA) Average Power Dissipation of Bridge (W) TJ = TJ Max. 0.5 ms Single Sine-Wave Capacitive Load 60 TJ = TJ Max. 50 40 Resistive or Inductive Load 30 20 10 TA = 150 °C TA = 125 °C 100 TA = 100 °C 10 1 TA = 25 °C 0.1 0 0 10 20 30 40 0 10 20 30 40 50 60 70 80 90 100 Average Output Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Power Dissipation Fig. 6 - Typical Reverse Leakage Characteristics Per Diode Document Number: 88612 Revision: 28-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GBPC12, GBPC15, GBPC25, GBPC35 Vishay General Semiconductor 1000 Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 100 10 1 0.01 10 1 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1 0.1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) GBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 1.135 (28.8) 1.115 (28.3) 0.24 (6.0) 0.18 (4.6) 0.042 (1.07) 0.038 (0.97) DIA. 0.310 (7.87) 0.290 (7.36) www.vishay.com 4 GBPC 0.24 (6.0) 0.18 (4.6) 0.732 (18.6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.50 (12.7) 0.44 (11.7) Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 0.672 (17.1) 0.632 (16.1) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) AC 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) DIA. 1.25 (31.8) MIN. 1.135 (28.8) 1.115 (28.3) 0.034 (0.86) 0.030 (0.76) 0.310 (7.62) 0.290 (7.36) 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) For technical questions within your region, please contact one of the following: Document Number: 88612 [email protected], [email protected], [email protected] Revision: 28-Mar-11 This document is subject to change without notice. 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