GBPC 12, 15, 25, 35 SERIES • 0.22(5.59) 0.20(5.08) Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation. • Surge overload rartings from 300 amperes to 400 amperes. • 1.14(29.0) 1.12(28.5) H OL E F OR #10 SCR EW Features 0.692(17.6) 0.612(15.5) D IA GBPC 0.25(6.35) 0.442(11.23) 0.432(10.97) 1.14(29.0) 1.12(28.5) + 0.692(17.6) 0.612(15.5) ~ ~ 0.602(15.3) 0.522(13.3) – 0.96(24.5) 0.85(21.5) Isolated voltage from case to lead over 2500 volts. 0.752(19.1) 0.672(17.1) 1.14(29.0) 1.12(28.5) H OLE FOR #10 SCR EW 0.22(5.59) 0.20(5.08) Suffix "W" 0.752(19.1) 0.672(17.1) D IA Wire Lead Structure – Suffix "M" ~ GBPC-W Terminal Location Face to Face 0.752(19.1) 0.672(17.1) 1.14(29.0) 1.12(28.5) 0.442(11.23) 0.432(10.97) 0.042(1.07) 0.038(0.97) ~ + 1.2(30.5) MI N 0.490(12.4) 0.410(10.4) Dimensions are in: inches (mm) 12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter IO Averag e Rectified Curr @ T A = 55°C if(surge) Value Units 12 15 25 35 A A A A 300 400 83.3 666 RθJL Peak F or w ard Surge C u rrent GBPC12, 15, 25 8.3 m s single half- sine- w ave Superimposed on rate d load (JEDEC method GBPC35 ) Total D evice Dissipati on Derate a bove 2°C 5 Ther m a l Resistance, J u nction to Lead A A W m W/°C °C/W Tstg Storag e Tem perature -55 to +150 TJ Operati n g Junction Temperature PD en t GBPC12 GBPC15 GBPC25 GBPC35 Range 1.5 °C -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1999 Fairchild Semiconductor Corporation GBPC 12, 15, 25, 35 SERIES ,v. Re A GBPC 12, 15, 25, 35 SERIES Discrete POWER & Signal Technologies (continued) Electrical Characteristics TA = 25°C unless otherwise noted Parameter Device Units 005 01 02 04 06 08 10 Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V DC Reverse Voltage (Rated VR) Maximum Reverse Leakage, total bridge @ rated VR TA = 25°C TA = 125°C Maximum Forward Voltage Drop, per bridge @ 6.0 A GBPC12 @ 7.5 A GBPC15 @ 12.5 A GBPC25 @ 17.5 A GBPC35 2 I t rating for fusing GBPC12,15,25 t < 8.3 ms GBPC35 Typical Junction Capacitance, per leg VR = 4.0V, GBPC12,15,25 f = 1.0 MHz GBPC35 50 100 200 400 600 800 1000 V 5.0 500 µA µA 1.1 V 375 660 A2Sec A2Sec 180 200 pF pF Typical Characteristics Forward Current Derating Curve FORWARD CURRENT (A) GBPC35 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 30 GBPC25 20 GBPC12-GBPC15 10 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (º C) 175 PEAK FORWARD SURGE CURRENT (A) Non-Repetitive Surge Current 40 400 200 GBPC35 100 GBPC12-GBPC25 50 20 Forward Characteristics 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 100 100 GBPC35 REVERSE CURRENT ( µ A) FORWARD CURRENT (A) 2 Reverse Characteristics 200 GBPC25 GBPC12-GBPC15 10 1 TA = 25º C Pulse Width = 300µs 2% Duty Cycle 0.1 0.6 1 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) 1.8 2 T A = 125 º C 10 1 TA = 25º C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) GBPC 12, 15, 25, 35 SERIES , Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.