SFH610A, SFH6106 Datasheet

SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
FEATURES
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
SFH610A
1
4
E
C 2
3
C
A
•
•
•
•
•
•
•
•
SFH6106
A 1
4 E
C 2
3 C
Low saturation voltage
Fast switching times
Low CTR degradation
Temperature stable
Low coupling capacitance
End stackable, 0.100" (2.54 mm) spacing
High common mode interference immunity
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
DESCRIPTION
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• CSA 93751
• BSI IEC 60950; IEC 60065
The SFH610A (DIP) and SFH6106 (SMD) feature a high
current transfer ratio, low coupling capacitance and high
isolation voltage. These couplers have a GaAs infrared
diode emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 or SMD package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation up to
an operation voltage of 400 VRMS or DC. Specifications
subject to change.
ORDERING INFORMATION
S
F
H
6
1
0
x
PART NUMBER
-
#
X
CTR
BIN
0
#
#
PACKAGE OPTION
DIP
Option 6
7.62 mm
10.16 mm
Option 7
Option 9
T
TAPE
AND
REEL
> 0.7 mm
AGENCY CERTIFIED/PACKAGE
UL, BSI, CSA
DIP-4
DIP-4, 400 mil
SMD-4
SMD-4, option 7
SMD-4, 400 mil, wide leadspread
> 0.1 mm
CTR (%)
40 to 80
63 to 125
100 to 200
160 to 320
250 to 500
SFH610A-1
SFH610A-2
SFH610A-3
SFH610A-4
SFH610A-5
SFH610A-1X006
SFH610A-2X006
SFH610A-3X006
SFH610A-4X006
-
SFH6106-1
SFH6106-2
SFH6106-3
SFH6106-4
SFH6106-5T
-
-
SFH610A-3X007
-
-
SFH610A-1X018T
-
-
-
-
Note
• For additional information on the available options refer to option information.
Document Number: 83666
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VR
IF
IFSM
Pdiss
6
60
2.5
100
V
mA
A
mW
VCEO
VECO
IC
IC
Pdiss
70
7
50
100
150
V
V
mA
mA
mW
Tstg
Tamb
-55 to +150
-55 to +100
°C
°C
Tsld
260
°C
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
t ≤ 10 μs
Collector current
tp ≤ 1.0 ms
Power dissipation
COUPLER
Storage temperature range
Ambient temperature range
Soldering temperature (1)
max. 10 s, dip soldering distance to
seating plane ≥ 1.5 mm
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
Thermal resistance
CO
13
pF
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Rthja
500
K/W
SFH610A-1
ICEO
2
50
nA
SFH6106-1
ICEO
2
50
nA
SFH610A-2
ICEO
2
50
nA
SFH6106-2
ICEO
2
50
nA
SFH610A-3
ICEO
5
100
nA
Thermal resistance
Collector emitter leakage current
VCE = 10 V
SFH6106-3
ICEO
5
100
nA
SFH610A-4
ICEO
5
100
nA
SFH6106-4
ICEO
5
100
nA
SFH610A-5
ICEO
5
100
nA
SFH6106-5T
ICEO
5
100
nA
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
f = 1 MHz
CC
0.4
COUPLER
Collector emitter saturation voltage
Coupling capacitance
V
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83666
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
IF = 10 mA, VCE = 5.0 V
IC/IF
IF = 1 mA, VCE = 5 V
PART
SYMBOL
MIN.
SFH610A-1
CTR
40
TYP.
MAX.
UNIT
80
%
SFH6106-1
CTR
40
80
%
SFH610A-2
CTR
63
125
%
SFH6106-2
CTR
63
125
%
SFH610A-3
CTR
100
200
%
SFH6106-3
CTR
100
200
%
SFH610A-4
CTR
160
320
%
SFH6106-4
CTR
160
320
%
SFH610A-5
CTR
250
500
%
SFH6106-5
CTR
250
SFH610A-1
CTR
13
30
500
%
%
%
SFH6106-1
CTR
13
30
SFH610A-2
CTR
22
45
%
SFH6106-2
CTR
22
45
%
SFH610A-3
CTR
34
70
%
SFH6106-3
CTR
34
70
%
SFH610A-4
CTR
56
90
%
SFH6106-4
CTR
56
90
%
PART
SYMBOL
MIN.
TYP.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
MAX.
UNIT
NON-SATURATED
Current
VCC = 5 V, RL = 75 Ω
IF
10
mA
Rise time
VCC = 5 V, RL = 75 Ω
tr
2
μs
Fall time
VCC = 5 V, RL = 75 Ω
tf
2
μs
Turn-on time
VCC = 5 V, RL = 75 Ω
ton
3
μs
Turn-off time
VCC = 5 V, RL = 75 Ω
toff
2.3
μs
VCC = 5 V
FCO
250
kHz
IF
20
mA
IF
10
mA
IF
10
mA
IF
5
mA
tr
2
μs
tr
3
μs
tr
3
μs
tr
4
μs
Cut-off frequency
SATURATED
SFH610A-1
SFH6106-1
SFH610A-2
Current
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SATURATED
SFH610A-1
SFH6106-1
SFH610A-2
Rise time
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
Document Number: 83666
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
SFH610A-1
tf
14
μs
tf
14
μs
tf
15
μs
ton
3
μs
ton
4.2
μs
ton
4.2
μs
ton
6
μs
toff
18
μs
toff
23
μs
toff
23
μs
toff
25
μs
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SFH610A-2
Turn-on time
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SFH610A-1
SFH6106-1
SFH610A-2
Turn-off time
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
UNIT
μs
SFH6106-2
SFH6106-1
MAX.
11
SFH610A-2
SFH610A-1
TYP.
tf
SFH6106-1
Fall time
MIN.
Note
• All values presented are typical values.
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
TEST CONDITION
SYMBOL
According to IEC 68 part 1
Comparative tracking index
VALUE
UNIT
55/100/21
CTI
175
VISO
4420
VRMS
Maximum transient isolation voltage
VIOTM
10 000
V
Maximum repetitive peak isolation voltage
VIORM
890
V
Maximum rated withstanding isolation voltage
t = 1 min
VIO = 500 V, Tamb = 25 °C
RIO
≥
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
PSO
400
mW
Input safety current
ISI
275
mA
Input safety temperature
TSI
175
°C
≥7
mm
Isolation resistance
Output safety power
Creepage distance
Standard DIP-4
1012
Ω
Clearance distance
Standard DIP-4
≥7
mm
Creepage distance
400 mil DIP-4
≥8
mm
Clearance distance
400 mil DIP-4
≥8
mm
≥ 0.4
mm
Insulation thickness
DTI
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Document Number: 83666
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
Ic mA
R L = 75 Ω
IF
IF = 14 mA
IF = 12 mA
20
VCC = 5 V
IF = 10 mA
IC
IF = 8 mA
IF = 6 mA
10
IF = 4 mA
47 Ω
IF = 1 mA
isfh610a_01
0
0
IF = 2 mA
5
10
V
VCE
isfh610a_04
Fig. 1 - Linear Operation (without saturation)
Fig. 4 - Output Characteristics (typ.) Collector Current vs.
Collector Emitter Voltage
%
103
IC
IF
1.2
VF
IF = 10 mA, VCC = 5.0 V
5
15
VF = f (IF)
V
25 °C
50 °C
75 °C
4
1.1
3
2
102
1
1.0
5
101
- 25
0.9
0
25
50
75
TA (°C)
10-1
5
100
101
5
isfh610a_05
isfh610a_03
Fig. 2 - Current Transfer Ratio (CTR) vs. Temperature
5 mA
IF
102
Fig. 5 - Diode Forward Voltage vs. Forward Current
20
pF
IF
1. 0 k Ω
C
f = 1.0 MHz
15
VCC = 5 V
10
47 Ω
5
CCE
isfh610a_02
0
10-2
isfh610a_06
Fig. 3 - Switching Operation (with saturation)
10-1
100
101
V
102
Ve
Fig. 6 - Transistor Capacitance (typ.) vs. Collector Emitter Voltage
Document Number: 83666
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
IF
104
mA
5
103
5
D=0
0.005
0.01
0.02
D=
tp
T
0.05
0.1
Vishay Semiconductors
tp
IF
T
Pulse cycle
D = parameter
0.2
102
5
101
0.5
DC
10-5
10-4
10-3
10-2
10-1
isfh610a_07
100 s 101
tp
Fig. 7 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
IF
120
mA
Ptot = f (TA)
90
60
30
0
0
25
50
isfh610a_08
75
TA
°C 100
Fig. 8 - Permissible Power Dissipation vs. Temperature
200
Ptot mW
150
Transistor
100
Diode
50
0
0
isfh610a_09
25
50
75
TA
°C 100
Fig. 9 - Permissible Diode Forward Current vs.
Ambient Temperature
Document Number: 83666
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
6.81
6.48
Pin 1 identification
4.83
4.55
7.62 typ.
ISO Method A
10 °
0.84
0.74
1.14
0.76
3.81
3.30
4°
typ .
6.35
5.84)
3.30
2.79
0.89
0.51
0° to 15°
1.32
1.22
0.25 typ.
2.67
2.41
i178027-1
SMD
0.268 (6.81)
0.255 (6.48)
0.190 (4.83)
0.179 (4.55)
PIN 1 IDENTIFICATION
0.030 (0.76)
0.100 (2.54)
R 0.010 (0.25)
0.070 (1.78)
0.315 (8.00) mi n.
0.435 (11.05)
0.045 (1.14)
0.030 (0.76)
0.060 (1.52)
0.395 (10.03)
0.375 (9.53)
0.312 (7.92)
0.296 (7.52)
0.033 (0.84)
0.029 (0.74)
10 °
0.150 (3.81)
0.130 (3.30)
0.010 (0.25)
0.008 (0.20)
ISO method A
4° typ.
0.052 (1.32)
0.048 (1.22)
i17802 9-2
0.098 (0.249)
0.040 (0.102)
Lead coplanarity
0.004 (0.102) max. (’K’)
0.105 (2.67)
0.095 (2.41)
Document Number: 83666
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
SFH610A, SFH6106
www.vishay.com
Vishay Semiconductors
Option 6
Option 7
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.028 (0.7)
0.400 (10.16)
0.430 (10.92)
0.300 (7.62)
typ.
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
Option 8
0.331 (8.4)
min.
0.406 (10.3)
max.
0.020 (0.50)
0.000 (0.00)
0.150 (3.81)
0.130 (3.30)
0.365 (9.27)
min.
0.472 (12.00)
max.
18487
Document Number: 83666
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 2.3, 23-Jul-15
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Revision: 02-Oct-12
1
Document Number: 91000