CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES • Isolation test voltage, 5300 VRMS A 1 6 NC • No base terminal connection for improved common mode interface immunity C 2 5 C • Long term stability NC 3 4 E • Industry standard dual-in-line package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 18216 AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection DESCRIPTION The CNY17F is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity. • DIN EN 60747-5-5 available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO ORDER INFORMATION PART REMARKS CNY17F-1 CTR 40 to 80 %, DIP-6 CNY17F-2 CTR 63 to 125 %, DIP-6 CNY17F-3 CTR 100 to 200 %, DIP-6 CNY17F-4 CTR 160 to 320 %, DIP-6 CNY17F-1X006 CTR 40 to 80 %, DIP-6 400 mil (option 6) CNY17F-1X007 CTR 40 to 80 %, SMD-6 (option 7) CNY17F-1X009 CTR 40 to 80 %, SMD-6 (option 9) CNY17F-2X006 CTR 63 to 125 %, DIP-6 400 mil (option 6) CNY17F-2X007 CTR 63 to 125 %, SMD-6 (option 7) CNY17F-2X009 CTR 63 to 125 %, SMD-6 (option 9) CNY17F-3X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) CNY17F-3X007 CTR 100 to 200 %, SMD-6 (option 7) CNY17F-3X009 CTR 100 to 200 %, SMD-6 (option 9) CNY17F-4X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) CNY17F-4X007 CTR 160 to 320 %, SMD-6 (option 7) CNY17F-4X009 CTR 160 to 320 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. Document Number: 83607 Rev. 1.5, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 221 CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW BVCEO 70 V IC 50 mA INPUT t ≤ 10 µs Surge forward current Power dissipation OUTPUT Collector emitter breakdown voltage Collector current t ≤ 1.0 ms IC 100 mA Pdiss 150 mW VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Total power dissipation COUPLER Isolation test voltage between emitter and detector referred to standard climate 23/50 DIN 50014 RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Isolation resistance VIO = 500 V Junction temperature max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Soldering temperature Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.25 1.65 UNIT INPUT Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reverse current Capacitance 6.0 V V VR = 6.0 V IR 0.01 VR = 0 V, f = 1.0 MHz CO 25 pF Rth 750 K/W Thermal resistance 10 µA OUTPUT Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF Base collector capacitance VCE = 5.0 V, f = 1.0 MHz CBC 6.5 pF Emitter base capacitance VCE = 5.0 V, f = 1.0 MHz CEB 7.5 pF Rth 500 K/W Thermal resistance www.vishay.com 222 For technical questions, contact: [email protected] Document Number: 83607 Rev. 1.5, 07-May-08 CNY17F Optocoupler, Phototransistor Output, no Base Connection Vishay Semiconductors ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT VCEsat 0.25 0.4 CC 0.6 CNY17F-1 ICEO 2.0 50 nA CNY17F-2 ICEO 2.0 50 nA CNY17F-3 ICEO 5.0 100 nA CNY17F-4 ICEO 5.0 100 nA COUPLER Collector emitter, saturation voltage IF = 10 mA, IC = 2.5 mA Coupling capacitance VCE = 10 V Collector emitter, leakage current V pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA Current transfer ratio IF = 1.0 mA PART SYMBOL MIN. MAX. UNIT CNY17F-1 CTR 40 TYP. 80 % CNY17F-2 CTR 63 125 % CNY17F-3 CTR 100 200 % CNY17F-4 CTR 160 320 % CNY17F-1 CTR 13 30 % CNY17F-2 CTR 22 45 % CNY17F-3 CTR 34 70 % CNY17F-4 CTR 56 90 % Note Current transfer ratio IC/IF at VCE = 5.0 V, 25 °C and collector emitter leakage current by dash number. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (WITHOUT SATURATION) Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω tf 2.0 µs Cut-off frequency IF = 10 mA, VCC = 5.0 V, RL = 75 Ω fCO 250 kHz Document Number: 83607 Rev. 1.5, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 223 CNY17F Optocoupler, Phototransistor Output, no Base Connection Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SWITCHING OPERATION (WITH SATURATION) IF = 20 mA CNY17F-1 ton 3.0 µs CNY17F-2 ton 4.2 µs CNY17F-3 ton 4.2 µs IF = 5 mA CNY17F-4 ton 6.0 µs IF = 20 mA CNY17F-1 tr 2.0 µs CNY17F-2 tr 3.0 µs CNY17F-3 tr 3.0 µs IF = 10 mA Turn-on time IF = 10 mA Rise time IF = 5 mA CNY17F-4 tr 4.6 µs IF = 20 mA CNY17F-1 toff 18 µs CNY17F-2 toff 23 µs CNY17F-3 toff 23 µs IF = 5 mA CNY17F-4 toff 25 µs IF = 20 mA CNY17F-1 tf 11 µs CNY17F-2 tf 14 µs CNY17F-3 tf 14 µs CNY17F-4 tf 15 µs IF = 10 mA Turn-off time IF = 10 mA Fall time IF = 5 mA TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified IF IF R L = 75 Ω IC V CC = 5 Ω V CC = 5 V 47 Ω 45 Ω icny17f_02 icny17f_01 Fig. 1 - Linear Operation (without Saturation) www.vishay.com 224 1 KΩ Fig. 2 - Switching Operation (with Saturation) For technical questions, contact: [email protected] Document Number: 83607 Rev. 1.5, 07-May-08 CNY17F Optocoupler, Phototransistor Output, no Base Connection 1000 Vishay Semiconductors 1000 (TA = 50 ˚C, VCE = 5 V) IC/IF = f (IF) (TA = - 25 ˚C, VCE = 5 V) IC/IF = f (IF) IC (%) IF IC (%) IF 100 1 2 3 4 10 100 1 2 3 4 10 1 1 0.1 icny17f_03 1 0.1 10 IF (mA) 1 icny17f_06 Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current 1000 1000 (TA = 75 ˚C, VCE = 5 V) IC/IF = f (IF) 100 IC (%) IF IC (%) IF (TA = 0 ˚C, VCE = 5 V) IC/IF = f (IF) 1 2 3 4 10 100 1 2 3 4 10 1 1 0.1 icny17f_04 1 10 IF (mA) 0.1 1 1000 10 IF (mA) icny17f_07 Fig. 4 - Current Transfer Ratio vs. Diode Current Fig. 7 - Current Transfer Ratio vs. Diode Current 1000 (TA = 25 ˚C, VCE = 5 V) IC/IF = f (IF) (IF = 10 mA, VCE = 5 V) IC/IF = f (T) 4 100 IC (%) IF IC (%) IF 10 IF (mA) 1 2 3 4 10 icny17f_05 1 10 IF (mA) Fig. 5 - Current Transfer Ratio vs. Diode Current Document Number: 83607 Rev. 1.5, 07-May-08 3 2 1 1 0.1 100 10 - 25 0 icny17f_08 25 50 75 TA (°C) Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature For technical questions, contact: [email protected] www.vishay.com 225 CNY17F Optocoupler, Phototransistor Output, no Base Connection Vishay Semiconductors 40 1.0 VCEsat = f (IC) (TA = 25 °C) 0.9 (TA = 25 °C) IC = f (VCE) 20 0.8 IF = 14 mA 0.7 IF = 12 mA 0.6 VCE sat IC (mA) 30 IF =10 mA IF = 7 mA 10 5 10 0.1 0 15 VCE (V) icny17f_09 0.4 0.2 IF = 2 mA 0 0 0.5 0.3 IF = 5 mA IF = 1 mA IF = 3 x IC 1 10 Fig. 9 - Output Characteristics CNY17F-2, -3 100 IC (mA) icny17f_12 Fig. 12 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-1 1.0 1.2 VF = f (IF) 0.9 25 °C 50 °C 75 °C VCEsat = f (IC) (TA = 25 °C) 0.8 0.7 VF (V) VCE sat (V) 1.1 1.0 0.6 0.5 IF = 2 x IC 0.4 0.3 IF = 3 x IC 0.2 0.1 0.9 0 0.1 1 10 100 IF (mA) icny17f_10 1 Fig. 10 - Forward Voltage 1.0 0.9 0.1 VCEsat = f (IC) (TA = 25 °C) 0.8 ICEO = f (V,T) (TA = 75 °C, IF = 0) 0.7 VCE sat (V) ICEO (µA) VCE = 35 V VCE = 12 V 0.01 IF = IC 0.6 0.5 0.4 0.3 IF = 2 x IC 0.2 0.1 IF = 3 x IC 0 0.001 0 25 50 75 100 TA (°C) Fig. 11 - Collector Emitter Off-state Current www.vishay.com 226 100 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-2 1 icny17f_11 10 IC (mA) icny17f_13 1 icny17f_14 10 100 IC (mA) Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-3 For technical questions, contact: [email protected] Document Number: 83607 Rev. 1.5, 07-May-08 CNY17F Optocoupler, Phototransistor Output, no Base Connection 1.0 120 IF = f (TA) 0.9 VCEsat = f (IC) (TA = 25 °C) 0.8 90 0.6 IF (mA) VCE sat (V) 0.7 IF = IC 0.5 0.4 0.3 0.1 0 60 30 IF = 2 x IC 0.2 IF = 3 x IC 0 1 10 100 IC (mA) icny17f_15 104 0 tp 75 100 20 C = f (VO) (TA = 25 °C, f = 1.0 MHz) C (pF) 15 0.2 0.5 102 50 TA (°C) Fig. 18 - Permissible Forward Current Diode t IF D=0 D= p T 0.005 T 0.01 0.02 D = parameter, 0.05 TA = 25 °C, IF = f(tp) 0.1 103 25 icny17f_18 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-4 IF (mA) Vishay Semiconductors 10 DC 5 CCE 101 10-5 10-4 10-3 10-2 10-1 100 101 0 10-2 tp (s) icny17f_16 10-1 icny17f_19 Fig. 16 - Permissible Pulse Load 100 101 102 Ve (V) Fig. 19 - Transistor Capacitance 200 Ptot = f (TA) Ptot (mW) 150 Transistor 100 Diode 50 0 0 icny17f_17 25 50 75 100 TA (°C) Fig. 17 - Permissible Power Dissipation for Transistor and Diode Document Number: 83607 Rev. 1.5, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 227 CNY17F Optocoupler, Phototransistor Output, no Base Connection Vishay Semiconductors PACKAGE DIMENSIONS in inches (millimeters) Pin one ID 3 2 1 4 5 6 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.048 0.039 (1.00) min. 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.130 (3.0) 3° to 9° 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 228 0.0040 (0.102) 0.0098 (0.249) 0.331 (8.4) min. 0.406 (10.3) max. For technical questions, contact: [email protected] 0.012 (0.30 ) typ 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. 18450 Document Number: 83607 Rev. 1.5, 07-May-08 CNY17F Optocoupler, Phototransistor Output, no Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83607 Rev. 1.5, 07-May-08 For technical questions, contact: [email protected] www.vishay.com 229 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1