SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage (1.0 s), 5300 VRMS • VCEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA A 1 6 B C 2 5 C NC 3 4 E • Built to conform to VDE requirements • Highest quality premium device • Long term stability • Storage temperature, - 55 ° to + 150 °C • Lead (Pb)-free component i179004 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The SFH601 is an optocoupler with a gallium arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. • UL1577, file no. E52744 system code H or J, double protection • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • CSA 93751 • BSI IEC 60950; IEC 60065 ORDER INFORMATION PART REMARKS SFH601-1 CTR 40 to 80 %, DIP-6 SFH601-2 CTR 63 to 125 %, DIP-6 SFH601-3 CTR 100 to 200 %, DIP-6 SFH601-4 CTR 160 to 320 %, DIP-6 SFH601-1X006 CTR 40 to 80 %, DIP-6 400 mil (option 6) SFH601-1X007 CTR 40 to 80 %, SMD-6 (option 7) SFH601-1X009 CTR 40 to 80 %, SMD-6 (option 9) SFH601-2X006 CTR 63 to 125 %, DIP-6 400 mil (option 6) SFH601-2X007 CTR 63 to 125 %, SMD-6 (option 7) SFH601-2X009 CTR 63 to 125 %, SMD-6 (option 9) SFH601-3X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) SFH601-3X007 CTR 100 to 200 %, SMD-6 (option 7) SFH601-3X009 CTR 100 to 200 %, SMD-6 (option 9) SFH601-4X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) SFH601-4X007 CTR 160 to 320 %, SMD-6 (option 7) SFH601-4X009 CTR 160 to 320 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6.0 V DC forward current IF 60 mA IFSM 2.5 A Pdiss 100 mW INPUT Surge forward current Total power dissipation Document Number: 83663 Rev. 1.3, 25-Jan-08 t = 10 µs For technical questions, contact: [email protected] www.vishay.com 1 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VCE VEBO IC IC Pdiss 100 7.0 50 100 150 V V mA mA mW t = 1.0 s VISO 5300 VRMS VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to +100 °C Tj 100 °C Tsld 260 °C OUTPUT Collector emitter voltage Emitter base voltage Collector current t = 1.0 ms Power dissipation COUPLER Isolation test voltage between emitter and detector, referred to climate DIN 40046, part 2, Nov. 74 Isolation resistance Junction temperature Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance Thermal resistance TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 1.25 1.65 0.01 25 750 10 V V µA pF K/W IF = 60 mA IR = 10 µA VR = 6.0 V VF = 0 V, f = 1.0 MHz VF VBR IR CO Rthja Collector emitter capacitance f = 1.0 mHz, VCE = 5.0 V CCE 6.8 Collector base capacitance f = 1.0 mHz, VCB = 5.0 V CCB 8.5 pF Emitter base capacitance f = 1.0 mHz, VEB = 5.0 V CEB 11 pF 6.0 OUTPUT Thermal resistance Collector emitter leakage current pF Rthja 500 SFH601-1 ICEO 2.0 50 SFH601-2 ICEO 2.0 50 nA SFH601-3 ICEO 5.0 100 nA SFH601-4 ICEO 5.0 100 nA IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 VI-O = 0, f = 1.0 MHz CIO 0.6 VCE =10 V K/W nA COUPLER Saturation voltage collector emitter Capacitance (input to output) V pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 83663 Rev. 1.3, 25-Jan-08 SFH601 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 10 mA IC/IF at VCE = 5.0 V IF = 1.0 mA PART SYMBOL MIN SFH601-1 CTR 40 TYP. MAX 80 UNIT % SFH601-2 CTR 63 125 % SFH601-3 CTR 100 200 % SFH601-4 CTR 160 320 % SFH601-1 CTR 13 30 % SFH601-2 CTR 22 45 % SFH601-3 CTR 34 70 % SFH601-4 CTR 56 90 % SYMBOL MIN. TYP. Note Current transfer ratio and collector emitter leakage current by dash number. SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART MAX. UNIT NON-SATURATED VCC = 5.0 V, RL = 75 Ω IF 10 mA Rise time VCC = 5.0 V, RL = 75 Ω tr 2.0 µs Fall time VCC = 5.0 V, RL = 75 Ω tf 2.0 µs Turn-on time VCC = 5.0 V, RL = 75 Ω ton 3.0 µs Turn-off time VCC = 5.0 V, RL = 75 Ω toff 2.3 µs Current SATURATED Current Rise time Fall time Turn-on time Turn-off time IF SFH601-1 IF 20 mA SFH601-2 IF 10 mA SFH601-3 IF 10 mA SFH601-4 IF 0.5 mA SFH601-1 tr 2.0 µs SFH601-2 tr 3.0 µs SFH601-3 tr 3.0 µs SFH601-4 tr 4.6 µs SFH601-1 tf 11 µs SFH601-2 tf 14 µs SFH601-3 tf 14 µs SFH601-4 tf 15 µs SFH601-1 ton 3.0 µs SFH601-2 ton 4.2 µs SFH601-3 ton 4.2 µs SFH601-4 ton 6.0 µs SFH601-1 toff 18 µs SFH601-2 toff 23 µs SFH601-3 toff 23 µs SFH601-4 toff 25 µs RL = 7 5 Ω IC IF 1kΩ VCC = 5 V VCC = 5 V 47 Ω 47 Ω isfh601_02 isfh601_01 Fig. 1 - Linear Operation (Without Saturation) Document Number: 83663 Rev. 1.3, 25-Jan-08 Fig. 2 - Switching Operation (With Saturation) For technical questions, contact: [email protected] www.vishay.com 3 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 8000 V VIORM 890 V PSO 700 mW ISI 400 mA TSI 175 °C Creepage distance standard DIP-6 7 mm Clearance distance standard DIP-6 7 mm Creepage distance 400 mil DIP-6 8 mm Clearance distance 400 mil DIP-6 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 103 % IC 5 IF 103 % IC 5 IF (TA = - 25 ˚C, VCE = 5.0 V) IC/IF = f (IF) DC Pulsbetrieb Pulse (TA = 0 °C, VCE = 5.0 V) 4 4 3 2 102 3 2 102 1 5 100 10-1 isfh601_03 1 5 5 100 5 mA 101 2 IF Fig. 3 - Current Transfer Ratio vs. Diode Current www.vishay.com 4 IC/IF = f (IF) 100 10-1 isfh601_04 5 100 5 mA 101 2 IF Fig. 4 - Current Transfer Ratio vs. Diode Current For technical questions, contact: [email protected] Document Number: 83663 Rev. 1.3, 25-Jan-08 SFH601 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection 103 % IC 5 IF DC Pulsbetrieb Pulse 4 VCE = 5.0 V) IC/IF = f (IF) 102 103 % IC 5 IF DC Pulsbetrieb Pulse 4 3 3 2 2 102 1 1 5 5 (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) 100 10-1 5 100 isfh601_05 5 mA 101 2 IF Fig. 5 - Current Transfer Ratio vs. Diode Current 103 % IC 5 IF DC Pulsbetrieb Pulse TA = 50 °C, VCE = 5.0 V) IC/IF = f (IF) 101 - 25 0 25 50 °C 75 TA isfh601_08 Fig. 8 - Current Transfer Ratio vs. Diode Current 30 Ic mA DC Pulsbetrieb Pulse IB = 40 µA 4 20 3 IB = 30 µA 2 102 IB = 20 µA 1 5 10 IC = f (VCE) IB = 10 µA (IF = 0) IB = 5 µA IB = 2 µA 100 10-1 5 100 isfh601_06 5 mA 101 2 IF 0 DC Pulsbetrieb Pulse TA = 75 °C, VCE = 5.0 V) IC/IF = f (IF) 5 10 30 Ic DC Pulsbetrieb Pulse mA IC = f (VCE) 1 5 IF = ± 14 mA IF = ± 10 mA 20 2 102 15 IF = ± 12 mA 4 3 V VCE Fig. 9 - Transistor Characteristics Fig. 6 - Current Transfer Ratio vs. Diode Current 103 % IC 5 IF 0 isfh601_09 IF = ± 8 mA IF = ± 6 mA 10 IF = ± 4 mA IF = ± 1 mA 100 10-1 isfh601_07 5 100 5 mA 101 2 IF Fig. 7 - Current Transfer Ratio vs. Diode Current Document Number: 83663 Rev. 1.3, 25-Jan-08 0 0 isfh601_10 5 IF = ± 2 mA 10 V VCE 15 Fig. 10 - Output Characteristics For technical questions, contact: [email protected] www.vishay.com 5 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection 1.2 VF 1.0 VCE sat VF = f (IF) V 25 °C 50 °C 75 °C V VCEsat = f (IC) 0.8 0.7 1.1 0.6 IF = 2 x IC 0.5 0.4 1.0 0.3 IF = 3 x IC 0.2 0.1 0 0.9 10-1 5 100 5 101 5 mA 102 IF isfh601_11 100 µA 5 101 isfh601_14 Fig. 11 - Forward Voltage ICEO 100 IC mA 102 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 1.0 ICEO = f (V, T) (IF = 0) 10-1 VCE sat V VCE = 40 V 0.8 VCE = 10 V 0.7 VCEsat = f (IC) IF = IC 0.6 5 0.5 0.4 10-2 0.3 IF = 2 x IC 5 0.2 IF = 3 x IC 0.1 10-3 - 25 0 0 25 50 isfh601_12 75 °C 100 TA Fig. 12 - Collector Emitter Off-state Current IC 5 mA 102 1.0 0.8 V VCEsat = f (IC) 0.8 IF = 3 x IC 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 100 isfh601_13 5 101 IC 5 mA 102 Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-1 www.vishay.com 6 101 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 VCE sat VCEsat = f (IC) V 0 5 isfh601_15 1.0 VCE sat 100 0 IF = IC IF = 2 x IC IF = 3 x IC 100 isfh601_16 5 101 IC 5 mA 102 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-4 For technical questions, contact: [email protected] Document Number: 83663 Rev. 1.3, 25-Jan-08 SFH601 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection 104 mA IF 5 D=0 0.005 0.01 0.02 103 D= tp T 0.05 0.1 5 tp IF T D = parameter, IF = f(tp) 0.2 0.5 102 DC 5 101 10-5 10-4 10-3 10-2 10-1 iSFH601_17 100 s 101 tp Fig. 17 - Permissible Pulse Load 200 Ptot mW Ptot = f (TA) 150 Transistor 100 Diode 50 0 0 25 50 isfh601_18 75 TA °C 100 Fig. 18 - Permissible Power Dissipation for Transistor and Diode IF 120 mA IF = f (TA) 90 60 30 0 0 isfh601_19 25 50 75 TA °C 100 Fig. 19 - Permissible Forward Current Diode Document Number: 83663 Rev. 1.3, 25-Jan-08 For technical questions, contact: [email protected] www.vishay.com 7 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.048 0.039 (1.00) min. 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 ° 4° typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) 0.100 (2.54) typ. 0.130 (3.0) 3° to 9° 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref. 0.028 (0.7) min. 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) www.vishay.com 8 0.331 (8.4) min. 0.406 (10.3) max. 0.180 (4.6) 0.160 (4.1) 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30 ) typ. 0.020 (0.51 ) 0.040 (1.02 ) 15° max. 0.315 (8.00) min. For technical questions, contact: [email protected] 18450 Document Number: 83663 Rev. 1.3, 25-Jan-08 SFH601 Optocoupler, Phototransistor Output, Vishay Semiconductors with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83663 Rev. 1.3, 25-Jan-08 For technical questions, contact: [email protected] www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1