VISHAY CNY17F

CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output, No Base Connection
Features
• Breakdown Voltage, 5300 VRMS
• No Base Terminal Connection for Improved Common Mode Interface Immunity
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
1
6 NC
C
2
5 C
NC
3
4 E
e3
18216
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• BSI IEC60950 IEC60065
• FIMKO
Description
The CNY17F is an optocoupler consisting af a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a
plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY17 Series, the base terminal of
the F type is not conected, resulting in a substantially
improved common-mode interference immunity.
Document Number 83607
Rev. 1.5, 26-Oct-04
Pb
Pb-free
Order Information
Part
Remarks
CNY17F-1
CTR 40 - 80 %, DIP-6
CNY17F-2
CTR 63 - 125 %, DIP-6
CNY17F-3
CTR 100 - 200 %, DIP-6
CNY17F-4
CTR 160 - 320 %, DIP-6
CNY17F-1X006
CTR 40 - 80 %, DIP-6 400 mil (option 6)
CNY17F-1X007
CTR 40 - 80 %, SMD-6 (option 7)
CNY17F-1X009
CTR 40 - 80 %, SMD-6 (option 9)
CNY17F-2X006
CTR 63 - 125 %, DIP-6 400 mil (option 6)
CNY17F-2X007
CTR 63 - 125 %, SMD-6 (option 7)
CNY17F-2X009
CTR 63 - 125 %, SMD-6 (option 9)
CNY17F-3X006
CTR 100 - 200 %, DIP-6 400 mil (option 6)
CNY17F-3X007
CTR 100 - 200 %, SMD-6 (option 7)
CNY17F-3X009
CTR 100 - 200 %, SMD-6 (option 9)
CNY17F-4X006
CTR 160 - 320 %, DIP-6 400 mil (option 6)
CNY17F-4X007
CTR 160 - 320 %, SMD-6 (option 7)
CNY17F-4X009
CTR 160 - 320 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
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1
CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
DC forward current
IF
60
mA
IFSM
2.5
A
Pdiss
100
mW
Symbol
Value
Unit
BVCEO
70
V
IC
50
mA
IC
100
mA
Pdiss
150
mW
Symbol
Value
Unit
VISO
5300
VRMS
Surge forward current
Test condition
t ≤ 10 µs
Power dissipation
Unit
Output
Parameter
Test condition
Collector-emitter breakdown
voltage
Collector current
t ≤ 1.0 ms
Total power dissipation
Coupler
Parameter
Test condition
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation thickness between
emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
175
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Tj
100
°C
Tsld
260
°C
Isolation resistance
VIO = 500 V
Junction temperature
Soldering temperature
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2
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
Max
1.25
1.65
Unit
Forward voltage
IF = 60 mA
VF
Breakdown voltage
IR = 10 µA
VBR
Reserve current
VR = 6.0 V
IR
0.01
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
Rth
750
K/W
Thermal resistance
V
6.0
V
µA
10
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
5.2
pF
Base - collector capacitance
VCE = 5.0 V, f = 1.0 MHz
CBC
6.5
pF
Emitter - base capacitance
VCE = 5.0 V, f = 1.0 MHz
CEB
7.5
pF
Rth
500
K/W
Thermal resistance
Coupler
Parameter
Saturation voltage, collectoremitter
Test condition
Part
IF = 10 mA, IC = 2.5 mA
VCE = 10 V
Typ.
Max
Unit
VCEsat
Min
0.25
0.4
V
50
nA
CC
0.6
CNY17F-1
ICEO
2.0
CNY17F-2
ICEO
2.0
50
nA
CNY17F-3
ICEO
5.0
100
nA
CNY17F-4
ICEO
5.0
100
nA
Typ.
Coupling capacitance
Collector-emitter leakage
current
Symbol
pF
Current Transfer Ratio
Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Current Transfer Ratio
Test condition
IF = 10 mA
IF = 1.0 mA
Document Number 83607
Rev. 1.5, 26-Oct-04
Part
Symbol
Min
Max
Unit
CNY17F-1
CTR
40
80
%
CNY17F-2
CTR
63
125
%
CNY17F-3
CTR
100
200
%
320
%
CNY17F-4
CTR
160
CNY17F-1
CTR
13
30
%
CNY17F-2
CTR
22
45
%
CNY17F-3
CTR
34
70
%
CNY17F-4
CTR
56
90
%
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CNY17F
Vishay Semiconductors
Switching Characteristics
Linear operation (without saturation)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Turn-on time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
ton
3.0
µs
Rise time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
tr
2.0
µs
Turn-off time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
toff
2.3
µs
Fall time
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
tf
2.0
µs
Cut-off frequency
IF = 10 mA, VCC = 5.0 V,
RL = 75 W
fCO
250
kHz
Switching operation (with saturation)
Parameter
Turn-on time
Rise time
Turn-off time
Fall time
Part
Symbol
IF = 20 mA
Test condition
CNY17F-1
ton
Min
Typ.
3.0
Max
Unit
µs
IF = 10 mA
CNY17F-2
ton
4.2
µs
CNY17F-3
ton
4.2
µs
IF = 5.0 mA
CNY17F-4
ton
6.0
µs
IF = 20 mA
CNY17F-1
tr
2.0
µs
IF = 10 mA
CNY17F-2
tr
3.0
µs
CNY17F-3
tr
3.0
µs
IF = 5.0 mA
CNY17F-4
tr
4.6
µs
IF = 20 mA
CNY17F-1
toff
18
µs
IF = 10 mA
CNY17F-2
toff
23
µs
CNY17F-3
toff
23
µs
IF = 5.0 mA
CNY17F-4
toff
25
µs
IF = 20 mA
CNY17F-1
tf
11
µs
IF = 10 mA
CNY17F-2
tf
14
µs
CNY17F-3
tf
14
µs
CNY17F-4
tf
15
µs
IF = 5.0 mA
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
RL=75 Ω
IC
IF
VCC=5 V
VCC=5 V
45 Ω
icny17f_01
47 Ω
icny17f_02
Figure 1. Linear Operation ( without Saturation)
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4
1 KΩ
Figure 2. Switching Operation (with Saturation)
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
(TA = –25°C, VCE = 5.0 V)
IC/IF = f (IF)
(TA = 50°C, VCE = 5.0 V)
1
2
3
4
1
2
3
4
A
icny17f_06
icny17f_03
Figure 6. Current Transfer Ratio vs. Diode Current
Figure 3. Current Transfer Ratio vs. Diode Current
(TA = 75°C, VCE = 5.0 V)
(TA = 0°C, VCE = 5.0 V)
IC/IF = f (IF)
1
2
3
4
icny17f_04
1
2
3
4
icny17f_07
Figure 7. Current Transfer Ratio vs. Diode Current
Figure 4. Current Transfer Ratio vs. Diode Current
(IF = 10 mA, VCE = 5.0 V)
IC/IF = f (T)
(TA = 25°C, VCE = 5.0 V)
IC/IF = f (IF)
4
3
2
1
2
3
4
icny17f_05
Figure 5. Current Transfer Ratio vs. Diode Current
Document Number 83607
Rev. 1.5, 26-Oct-04
1
icny17f_08
A
Figure 8. Current Transfer Ratio (CTR) vs. Temperature
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5
CNY17F
Vishay Semiconductors
VCEsat = f (IC) (TA = 25°C)
(TA = 25°C) IC = f (VCE)
icny17f_09
icny17f_12
Figure 9. Output Characteristics CNY17F-2, -3
Figure 12. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-1
VF = f (IF)
icny17f_10
VCEsat = f (IC) (TA = 25°C)
icny17f_13
Figure 10. Forward Voltage
Figure 13. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-2
VCEsat = f (IC) (TA = 25°C)
ICEO = f (V,T)
(TA = 75°C, IF = 0)
icny17f_14
icny17f_11
Figure 11. Collector-Emitter off-state Current
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Figure 14. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-3
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
IF = f (TA)
V
VCEsat = f (IC) (TA = 25°C)
icny17f_18
icny17f_15
Figure 18. Permissible Forward Current Diode
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-4
C=f (VO) (TA= 25°C, f=1.0 MHz)
D=parameter,
TA = 25°C, IF=f(tp)
icny17f_19
icny17f_16
Figure 16. Permissible Pulse Load
Figure 19. Transistor Capacitance
Ptot = f (TA)
icny17f_17
Figure 17. Permissible Power Dissipation for Transistor and Diode
Document Number 83607
Rev. 1.5, 26-Oct-04
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CNY17F
Vishay Semiconductors
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
typ.
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
3°–9°
.114 (2.90)
.130 (3.0)
.010 (.25)
typ.
.300–.347
(7.62–8.81)
i178004
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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8
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83607
Rev. 1.5, 26-Oct-04
CNY17F
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83607
Rev. 1.5, 26-Oct-04
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