10-PZ07NIA075S5-P926F53Y target datasheet flow NPC 0 650 V / 75 A Features flow 0 12mm housing ● Three-level topology ● High efficient with latest chip technology ● Low inductive package Schematic Target applications ● Solar Types ● 10-PZ07NIA075S5-P926F53Y Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 62 A 225 A 86 W Buck Switch Collector-emitter voltage Collector current VCES IC Tj = Tjmax Ts = 80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES ±20 V Maximum junction temperature Tjmax 175 °C Copyright Vincotech Ts = 80 °C 1 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 59 A 150 A 78 W Buck Diode Peak Repetitive Reverse Voltage VRRM Continuous (direct) forward current IF Tj = Tjmax Ts = 80 °C Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax 175 °C VCES 650 V 89 A 225 A 99 W Tj = Tjmax Ts = 80 °C Boost Switch Collector-emitter voltage Collector current IC Tj = Tjmax Ts = 80 °C Repetitive peak collector current ICRM tp limited by Tjmax Total power dissipation Ptot Tj = Tjmax Gate-emitter voltage VGES ±20 V Maximum junction temperature Tjmax 175 °C VRRM 650 V 50 A 100 A 64 W 175 °C 650 V 48 A 100 A 70 W 175 °C Ts = 80 °C Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current IF Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax Tj = Tjmax Ts = 80 °C Tj = Tjmax Ts = 80 °C Boost Sw. Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current VRRM IF Repetitive peak forward current IFRM Total power dissipation Ptot Maximum Junction Temperature Tjmax Copyright Vincotech Tj = Tjmax Ts = 80 °C Tj = Tjmax Ts = 80 °C 2 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit Module Properties Thermal Properties Storage temperature Tstg -40…+125 °C Operation temperature under switching condition Tjop -40…(Tjmax - 25) °C 4000 V min. 12,7 mm 9 mm Isolation Properties Isolation voltage Visol DC Test Voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech CTI tp = 2 s > 200 3 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max 3,2 4 4,8 1,42 1,55 1,75 Buck Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 0,00075 25 15 75 25 125 V V Collector-emitter cut-off current ICES 0 650 25 50 µA Gate-emitter leakage current IGES 20 0 25 100 nA Internal gate resistance rg none Input capacitance Cies 4500 Output capacitance Coes Reverse transfer capacitance Cres Gate charge Qg f = 1 MHz 0 25 25 Ω 130 pF 17 15 520 75 25 164 nC 1,11 K/W Thermal Thermal resistance junction to sink Rth(j-s) phase-change material λ = 3,4 W/mK Buck Diode Static Forward voltage Reverse leakage current 75 VF 650 Ir 25 1,53 125 1,49 150 1,47 25 1,77 V 3,8 µA Thermal Thermal resistance junction to sink Copyright Vincotech Rth(j-s) phase-change material λ = 3,4 W/mK 1,23 4 K/W 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max 4,2 5 5,8 V 1,05 1,45 V Boost Switch Static Gate-emitter threshold voltage VGE(th) Collector-emitter saturation voltage VCEsat VGE = VCE 0,001 15 25 75 25 Collector-emitter cut-off current ICES 0 650 25 40 µA Gate-emitter leakage current IGES 20 0 25 100 nA Internal gate resistance rg Input capacitance Cies none 11625 f = 1 MHz Reverse transfer capacitance Ω 0 25 25 pF 30 Cres Thermal Thermal resistance junction to sink Rth(j-s) phase-change material λ = 3,4 W/mK 0,96 K/W Boost Diode Static Forward voltage VF Reverse leakage current Ir 50 650 25 125 150 1,35 1,32 1,28 25 1,77 V 2,65 µA Thermal Thermal resistance junction to sink Rth(j-s) phase-change material λ = 3,4 W/mK 1,48 K/W Boost Sw. Protection Diode Static Forward voltage VF Reverse leakage current Ir 50 650 25 125 1,63 1,54 25 1,9 27 V µA Thermal Thermal resistance junction to sink Copyright Vincotech Rth(j-s) phase-change material λ = 3,4 W/mK 1,36 5 K/W 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Characteristic Values Parameter Symbol Conditions VCE [V] VGE [V] VDS [V] VGS [V] VF [V] Value IC [A] ID [A] IF [A] Tj [°C] Min Typ Unit Max Thermistor Rated resistance R Deviation of R100 ΔR/R Power dissipation 25 R100 = 1484 Ω 100 P Power dissipation constant 22 -5 kΩ 5 % 25 5 mW 25 1,5 mW/K B-value B(25/50) Tol. ±1 % 25 3962 K B-value B(25/100) Tol. ±1 % 25 4000 K Vincotech NTC Reference Copyright Vincotech I 6 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Ordering Code & Marking Version without thermal paste with Press-fit pins 12mm housing NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Ordering Code 10-PZ07NIA075S5-P926F53Y Text Datamatrix Name Date code UL & VIN Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL VIN LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 33,6 0 G12 2 30,8 0 S12 3 22 0 DC- 4 19,2 0 DC- 5 10,1 0 GND 6 2,8 0 S14 7 0 0 G14 8 0 7,1 Ph 9 0 9,9 Ph 10 0 12,7 Ph 11 12 0 0 15,5 22,6 Ph G13 13 2,8 22,6 S13 14 10,1 22,6 GND 15 19,2 22,6 DC+ 16 22 22,6 DC+ 17 30,8 22,6 S11 18 33,6 22,6 G11 19 33,6 14,8 Therm1 20 33,6 8,2 Therm2 21 22 Not assembled Not assembled Copyright Vincotech 7 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Pinout Identification ID Component Voltage Current Function T11,T12 IGBT 650 V 75 A Buck Switch D11,D12 FWD 650 V 75 A Buck Diode T13,T14 IGBT 650 V 75 A Boost Switch D13,D14 FWD 650 V 50 A Boost Diode D43,D44 FWD 650 V 50 A Boost Sw. Protection Diode Rt Thermistor Copyright Vincotech Comment Thermistor 8 25 Apr. 2016 / Revision 1 10-PZ07NIA075S5-P926F53Y target datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: 10-PZ07NIA075S5-P926F53Y-T1-14 25 Apr. 2016 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 9 25 Apr. 2016 / Revision 1