V23990-P729-F54-PM final data sheet fastPACK 0 H 2nd gen V23990-P729-F54-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P729-F54 1200V/25A Symbol Datasheet values Unit max. DC link Capacitor DC link Kondensator Max.DC voltage Max. Gleichspannung TC=25°C UMAX 1000 V VCE 1200 V Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time* Kurzschlußverhalten* max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by Tj max IC 38 A Icpuls 75 A Tj=Tjmax Ptot 120 W VGE ±20 V tSC 10 us Tjmax 150 °C Tj=Tjmax Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by Tj max IF 34 A IFRM 50 A Tj=Tjmax Ptot 72 W Tjmax 150 °C Tstg -40…+125 °C Top -40…+125 °C Tj=Tjmax Th=80°C Tc=80°C Thermal properties Thermische Eigenschaften Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Copyright by Vincotech 1 Revision: 1 V23990-P729-F54-PM final data sheet fastPACK 0 H 2nd gen V23990-P729-F54-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P729-F54 1200V/25A Symbol Datasheet values Unit max. Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke Additional notes and remarks: Copyright by Vincotech t=1min Vis 4000 Vdc min 12,7 mm min 12,7 mm * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! 2 Revision: 1 V23990-P729-F54-PM final data sheet fastPACK 0 H 2nd gen V23990-P729-F54-01-14 P729-F54 Characteristic values/ Charateristische Werte Description Symbol Conditions T(C°) Unit Datasheet values Other conditions (Rgon-Rgoff) VGE(V) VGS(V) VCE(V) IC(A) IF(A) VDS(V) Id(A) Min Typ Max 45 56 67 nF 3 5,5 7 V Capacitor Kondensator C value C Wert C Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Thermal resistance chip to heatsink per chip VGE(th) VCE(sat) ICES IGES Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=VGE 1m 15 25 0 600 20 0 2,12 2,4 Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Cies 2,9 V 0,25 mA 200 nA none Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 f=1MHz ns ±15 600 25 128 ±15 600 25 13 ±15 600 25 224 ±15 600 25 79 ns ns ns mWs ±15 600 25 1,7 ±15 0 600 25 25 1,56 2,02 mWs Wärmewiderstand Chip-Kühlkörper pro Chip nF f=1MHz 0 25 0,19 nF f=1MHz 0 25 0,06 nF 0,58 K/W Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH K/W Diode H-bridge Diode H-Brücke Diode forward voltage VF Durchlaßspannung Peak reverse recovery current IRM Rückstromspitze Reverse recovery time trr Sperreverzögerungszeit Reverse recovered charge Qrr Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Erec Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 25 1 2,4 ±15 600 25 65,6 Rgon=16 ±15 600 25 224 ns uC Rgon=16 ±15 600 25 4,8 Rgon=16 ±15 600 25 2,02 mWs 0,97 K/W WarmeleitpasteDicke50u RthJC V $ Rgon=16 Thermal grease thickness RthJH 1,79 1,8 NTC-Thermistor K/W 20-C2223 NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Copyright by Vincotech R25 Tj=25°C Tol. ±5% DR/R Tc=100°C R100=1503 P Tj=25°C B(25/100) Tj=25°C Tol. ±3% 3 20,9 22 23,1 kOhm 2,9 %/K 210 mW 3980 K Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Typical output characteristics Output inverter IGBT Ic= f(V CE) Ic= f(V CE) 60 IC (A) IC (A) 60 50 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 4 VCE (V) 5 0 1 2 3 VCE (V) 4 parameter: tp = 250 us Tj = 25 °C VGE parameter: from: 7 V to 17 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGE parameter: from: 7 V to 17 V in 1 V steps Figure 3. Typical transfer characteristics Figure 4. Output inverter IGBT Ic= f(V GE) 25 5 Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED IC (A) IF (A) 60 50 20 125 oC 25 oC 40 15 25 oC 125 oC 30 10 20 5 10 0 0 0 2 4 6 8 10 V GE (V) 12 parameter: tp = 250 us VCE = Copyright by Vincotech 0 10 V 0,5 1 1,5 2 2,5 VF (V) 3 parameter: tp = 250 us 4 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Output inverter Figure 5. Typical switching energy losses Figure 6. as a function of collector current Output inverter IGBT E = f (RG) E = f (Ic) 3,5 E (mWs) 3,5 E (mWs) Typical switching energy losses as a function of gate resistor Output inverter IGBT Eon 3 Eon 3 2,5 2,5 Erec Eoff 2 2 Erec 1,5 1,5 1 1 0,5 0,5 0 Eoff 0 0 10 20 30 40 I C (A) 0 50 15 30 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 16 Rgoff= 16 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 25 A Figure 7. Typical switching times as a Figure 8. function of collector current Output inverter IGBT 45 60 R G ( : ) 75 Typical switching times as a function of gate resistor Output inverter IGBT t = f (R G) t = f (Ic) 1 tdoff t ( Ps) t ( Ps) 1 tdon tdoff tdon tf 0,1 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 10 20 30 40 IC (A) 50 0 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 16 Rgoff= 16 Copyright by Vincotech 15 30 45 60 RG (:) 75 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 25 A 5 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Output inverter Figure 9. Typical reverse recovery time as a Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode function of IGBT turn on gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 120 t rr( Ps) IrrM (A) 0,5 100 0,4 80 0,3 60 0,2 40 0,1 20 0 0 0 15 Tj = VR = I F= VGE= 30 125 600 25 ±15 45 60 R Gon ( : ) 75 0 15 °C V A V Tj = VR = I F= VGE= Figure 11. Typical reverse recovery charge as a 45 60 R Gon ( : ) 75 °C V A V Figure 12. Typical rate of fall of forward function of IGBT turn on gate resistor Output inverter FRED diode and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 6000 direc / dt (A/ Ps) Qrr ( PC) 30 125 600 25 ±15 4,9 5000 4,75 4000 4,6 3000 dIrec/dt 4,45 dI0/dt 2000 4,3 1000 4,15 0 4 0 15 Tj = VR = I F= VGE= 30 125 600 25 ±15 45 60 R Gon ( :) 75 0 °C V A V Copyright by Vincotech 15 Tj = VR = I F= VGE= 6 30 125 600 25 ±15 45 60 R Gon ( :) 75 °C V A V Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Output inverter Figure 13. IGBT transient thermal impedance Figure 14. FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 1 1 10 ZthJH (K/W) ZthJH (K/W) 10 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 10-2 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 10-5 101 RthJH= 0,58 K/W 10-4 10-3 10-2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,04 0,08 0,28 0,11 0,04 0,04 Tau (s) 4,2E+00 7,1E-01 1,1E-01 3,1E-02 2,8E-03 3,1E-04 Copyright by Vincotech 0,03 0,08 0,23 0,31 0,15 0,12 7 10-1 100 t p (s) 101 RthJH= 0,97 K/W Tau (s) 4,9E+00 7,5E-01 1,1E-01 3,1E-02 4,5E-03 6,8E-04 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Output inverter Figure 15. Power dissipation as a Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 40 IC (A) Ptot (W) 300 250 30 200 20 150 100 10 50 0 0 0 50 100 150 Th ( o C) 0 200 50 100 150 parameter: Tj= 150 ºC parameter: Tj= 150 ºC VGE= 15 V Figure 17. Power dissipation as a Figure 18. Forward current as a o Th ( C) 200 function of heatsink temperature Output inverter FRED function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 180 IF (A) Ptot (W) 40 150 30 120 90 20 60 10 30 0 0 0 50 100 150 Th ( o C) 200 0 parameter: Tj= 150 ºC Copyright by Vincotech 50 100 150 Th ( o C) 200 parameter: Tj= 150 ºC 8 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Thermistor Figure 19. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R/ 25000 20000 15000 10000 5000 0 25 50 Copyright by Vincotech 75 100 T (°C) 125 9 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Switching definitions General conditions: Figure 1. Tj= 125 °C Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter IGBT Figure 2. 16 Rgoff= 16 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter IGBT 400 140 Ic 120 350 tdoff 100 300 Uce 90% Uge 90% 80 250 Ic 60 200 % % 40 150 Uce tEoff 20 100 Uge tdon 0 Uge 50 Ic 1% Uce Uge10% -20 Uce3% Ic10% 0 tEon -40 -0,3 -50 -0,2 -0,1 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. 0 -15 15 600 24 0,22 0,37 0,1 0,2 time (us) 0,3 0,4 0,5 0,6 2,6 V V V A us us 2,7 2,8 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdon= tEon= Turn-off Switching Waveforms & definition of tf Output inverter IGBT Figure 4. 2,9 3 3,1 time(us) -15 15 600 24 0,13 0,4 3,2 3,3 3,4 3,5 V V V A us us Turn-on Switching Waveforms & definition of tr Output inverter IGBT 380 140 120 Ic 340 fitted Uce Ic 300 100 260 Ic 90% 80 220 % 180 Ic 60% % 60 40 140 Ic 40% Uce Ic90% 100 20 tr 60 Ic10% 0 20 Ic10% tf -20 2,85 -20 0,1 0,15 0,2 0,25 0,3 time (us) 0,35 0,4 0,45 Uc(100%)= 600 V Ic(100%)= 24 A tf= 0,079 us Copyright by Vincotech 2,9 2,95 3 3,05 time(us) 3,1 3,15 3,2 Uc(100%)= 600 V Ic(100%)= 24 A tr= 0,013 us 10 Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter IGBT Figure 6. Turn-on Switching Waveforms & definition of tEon Output inverter IGBT 300 120 Eoff 100 260 Poff Pon 220 80 180 60 140 % Eon % 100 40 20 60 Uge90% Ic 1% 0 Uge10% 20 Uce3% tEon tEoff -20 -0,4 -20 -0,2 0 0,2 time (us) 0,4 0,6 2,7 0,8 2,8 2,9 Poff(100%)= 14,64 kW Eoff(100%)= 1,57 mJ tEoff= 0,37 us Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. Output inverter IGBT 20 150 15 100 3,1 time(us) 3,2 3,3 3,4 14,6 kW 1,70 mJ 0,4 us Turn-off Switching Waveforms & definition of trr Output inverter FRED Id fitted trr 50 10 0 Ud 5 Uge (V) 3 -50 IRRM10% % -100 0 -5 -150 -10 -200 -15 -250 -20 -300 IRRM90% IRRM100% -50 0 50 100 Ugeoff= -15 Ugeon= 15 Uc(100%)= 600 Ic(100%)= 24 Qg= 304,9 Copyright by Vincotech 150 Qg (nC) 200 250 300 2,8 350 V V V A nC 2,9 Ud(100%)= Id(100%)= IRRM(100%)= trr= 11 3 600 24 66 0,22 3,1 time(us) 3,2 3,3 3,4 V A A us Revision: 1 V23990-P729-F54-PM fastPACK0 H 2nd gen V23990-P729-F54 Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter FRED Figure 10. 150 Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter FRED 150 Qrr 100 Prec 125 Id Erec 50 100 tQint 0 75 tErec -50 % -100 % 50 25 -150 0 -200 -25 -250 -50 -300 2,6 2,8 3 3,2 3,4 time(us) 3,6 3,8 2,6 4 Id(100%)= 24 A Qrr(100%)= 4,803 uC tQint= 0,60 us Copyright by Vincotech 2,8 Prec(100%)= Erec(100%)= tErec= 12 3 3,2 3,4 time(us) 3,6 3,8 4 14,6 kW 2,02 mJ 0,60 us Revision: 1