V23990-P704-F-PM flow 90PACK 1 600V/ 30A

V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
Datasheet values
Unit
max.
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time*
Kurzschlußverhalten*
max. Chip temperature
max. Chiptemperatur
Tj=175°C
Th=80°C,
Tc=80°C
VCE
600
V
IC
27,5
35,6
90
A
47,7
72
±20
W
6
360
175
us
V
°C
26
35,6
60
A
W
Tjmax
37
55
175
°C
Tstg
-40…+125
°C
Top
-40…+125
°C
Vis
4000
Vdc
min 12,7
mm
min 12,7
mm
tp limited by Tj max
Icpuls
Tj=175°C
Ptot
Th=80°C
Tc=80°C
VGE
Tj150°C
VCC=360V
VGE=15V
tSC
Tjmax
A
V
Diode Inverter
Diode Wechselrichter
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. Chip temperature
max. Chiptemperatur
Tj=175°C
Th=80°C,
Tc=80°C
IF
tp limited by Tj max
IFRM
Tj=175°C
Ptot
Th=80°C
Tc=80°C
A
Thermal properties
Thermische Eigenschaften
Storage temperature
Lagertemperatur
Operation temperature
Betriebstemperatur
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
Creepage distance
Kriechstrecke
Clearance
Luftstrecke
Additional notes and remarks:
Copyright by Vincotech
t=1min
* Allowed number of short circuits must be less than 1000 times, and time duration
between short circuits should be more than 1 second!
1
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Characteristic values/ Charateristische Werte
Description
Symbol
Conditions
T(C°)
Transistor Inverter
Transistor Wechselrichter
Gate emitter threshold voltage
VGE(th)
Gate-Schwellenspannung
Collector-emitter saturation voltage
Kollektor-Emitter Sättigungsspannung
Collector-emitter cut-off
Kollektor-Emitter Reststrom
Gate-emitter leakage current
Gate-Emitter Reststrom
Integrated Gate resistor
Integrirter Gate Widerstand
Turn-on delay time
Einschaltverzögerungszeit
Rise time
Anstiegszeit
Turn-off delay time
Abschaltverzögerungszeit
Fall time
Fallzeit
Turn-on energy loss per pulse
Einschaltverlustenergie pro Puls
Turn-off energy loss per pulse
Abschaltverlustenergie pro Puls
Input capacitance
Eingangskapazität
Output capacitance
Ausgangskapazität
Reverse transfer capacitance
Rückwirkungskapazität
Gate charge
Gate Ladung
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
Coupled thermal resistance inverter diode-transistor
Gekoppelte Wärmewiderstand Wechselrichter Diode-Transistor
Coupled thermal resistance inverter transistor-transistor
Gekoppelte Wärmewiderstand Wechselrichter Transistor-Transistor
Tj=25°C
Datasheet values
Other conditions
(Rgon-Rgoff)
VR(V)
VGE(V) VCE(V)
VGS(V) VDS(V)
VCE=VGE
Unit
IC(A)
IF(A)
Id(A)
Min
Typ
Max
430u
5
5,8
6,5
V
1,54
1,71
2,1
V
Tj=150°C
VCE(sat) Tj=25°C
Tj=125°C
ICES
Tj=25°C
Tj=150°C
IGES Tj=25°C
Tj=150°C
Rgint
td(on)
15
Cies
Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 f=1MHz
Coss
Tj=25°C
Crss
Tj=25°C
QGate
Tj=25°C
td(off)
tf
Eon
Eoff
0
600
0,2
mA
20
0
350
nA
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
tr
30
ns
±15
300
30
95
±15
300
30
18,7
±15
300
30
158,5
±15
300
30
83,2
±15
300
30
0,4958
±15
0
300
25
30
0,8233
1,63
nF
f=1MHz
0
25
0,1
nF
f=1MHz
0
25
0,05
nF
ns
ns
ns
mWs
mWs
nC
Thermal grease
thickness50um
Warmeleitpaste
Dicke50um = 0,61 W/mK
RthJH
RthJC
Ohm
1,99
K/W
K/W
RthJH
tbd
K/W
RthJH
tbd
K/W
Diode Inverter
Diode Wechselrichter
Diode forward voltage
Durchlaßspannung
Peak reverse recovery current
Rückstromspitze
Reverse recovery time
Sperreverzögerungszeit
Reverse recovered charge
Sperrverzögerungsladung
Reverse recovered energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
Coupled thermal resistance inverter transistor-diode
Gekoppelte Wärmewiderstand Wechselrichter Transistor-Diode
Coupled thermal resistance inverter diode-diode
Gekoppelte Wärmewiderstand Wechselrichter Diode-Diode
Copyright by Vincotech
VF
IRM
trr
Qrr
Erec
RthJH
RthJC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Rgoff=16 Rgon=16 Thermal grease
thickness50um
Warmeleitpaste
Dicke50um = 0,61 W/mK
300
30
1,47
1,44
±15
300
30
41,24
±15
300
30
155,7
±15
300
30
2,3044
±15
300
30
0,5087
2,2
V
A
ns
uC
mWs
2,61
K/W
K/W
RthJH
K/W
RthJH
K/W
2
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Output inverter
Figure 1.
Typical output characteristics
Output inverter IGBT
Figure 2.
Typical output characteristics
Output inverter IGBT
Ic= f(VCE)
Ic= f(VCE)
70
IC (A)
IC (A)
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
1
2
3
VCE (V)
4
5
0
1
2
3
4
VCE (V)
parameter: tp = 250 us Tj = 25 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
parameter: tp = 250 us Tj = 125 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
Figure 3.
Figure 4.
Typical transfer characteristics
Output inverter IGBT
Ic= f(VGE)
30
5
Typical diode forward current as
a function of forward voltage
IF=f(VF)
Output inverter FRED
IC (A)
IF (A)
70
60
25
50
20
125 oC
40
15
30
125 oC
10
20
25 oC
5
10
25 oC
0
0
0
3
6
9
V GE (V)
parameter: tp = 250 us VCE =
Copyright by Vincotech
0
12
10 V
0,5
1
1,5
2
VF (V) 2,5
parameter: tp = 250 us
3
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Output inverter
Figure 5.
Typical switching energy losses
as a function of collector current
Output inverter IGBT
Figure 6.
Typical switching energy losses
as a function of gate resistor
Output inverter IGBT
E = f (RG)
E = f (Ic)
1,6
Eon
E (mWs)
E (mWs)
1,6
Eoff
1,2
1,2
Eoff
Erec
0,8
0,8
Erec
0,4
0,4
Eon
0
0
0
10
20
30
40
50 I C (A)
0
60
15
30
inductive load, Tj = 125 °C
VCE = 300 V
VGE= ±15 V
Rgon=
16 Rgoff=
16 inductive load, Tj = 125 °C
VCE = 300 V
VGE= ±15 V
Ic =
30 A
Figure 7.
Figure 8.
Typical switching times as a
function of collector current
Output inverter IGBT
45
60
R G ( : ) 75
Typical switching times as a
function of gate resistor
Output inverter IGBT
t = f (RG)
t = f (Ic)
1
t ( Ps)
t ( Ps)
1
tdoff
tdon
tdoff
tf
tdon
0,1
0,1
tf
tr
0,01
tr
0,01
0,001
0,001
0
10
20
30
40
50 IC (A)
60
0
inductive load, Tj = 125 °C
VCE = 300 V
VGE= ±15 V
Rgon=
16 Rgoff=
16 Copyright by Vincotech
15
30
45
60
RG (: )
75
inductive load, Tj = 125 °C
VCE = 300 V
VGE= ±15 V
Ic =
30 A
4
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
IRRM = f (Rgon)
70
0,4
IrrM (A)
t rr( Ps)
trr = f (Rgon)
0,35
60
0,3
50
0,25
40
0,2
30
0,15
20
0,1
10
0,05
0
0
0
15
Tj =
VR =
IF=
VGE=
30
125
300
30
±15
45
60 R Gon ( : ) 75
0
°C
V
A
V
30
Tj =
VR =
IF=
VGE=
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
125
300
30
±15
60 R Gon ( : )
45
75
°C
V
A
V
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
Qrr = f (Rgon)
3
4500
direc / dt (A/ Ps)
Qrr ( PC)
15
2,5
4000
3500
3000
2
2500
1,5
2000
1500
1
dI0/dt
dIrec/dt
1000
0,5
500
0
0
0
15
Tj =
VR =
IF=
VGE=
30
125
300
30
±15
45
60 R Gon ( :) 75
0
°C
V
A
V
Copyright by Vincotech
15
Tj =
VR =
IF=
VGE=
5
30
125
300
30
±15
45
60 R Gon ( :) 75
°C
V
A
V
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Output inverter
Figure 13. IGBT transient thermal impedance
as a function of pulse width
Figure 14. FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
1
1
10
ZthJH (K/W)
ZthJH (K/W)
10
100
0
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
-2
10
10-2
10-5
10-4
10-3
10-2
Parameter: D = tp / T
10-1
100 t p (s)
10-5
101
RthJH= 1,99 K/W
10-4
10-3
10-2
Parameter: D = tp / T
IGBT thermal model values
FRED thermal model values
R (C/W)
R (C/W)
0,05
0,29
0,79
0,46
0,24
0,10
0,08
Tau (s)
8,4E+00
9,9E-01
2,0E-01
4,0E-02
7,6E-03
6,1E-04
1,1E-04
Copyright by Vincotech
0,07
0,26
0,93
0,68
0,35
0,15
0,18
6
10-1
100
t p (s)
101
RthJH= 2,61 K/W
Tau (s)
7,6E+00
8,7E-01
1,5E-01
3,7E-02
6,5E-03
8,8E-04
1,6E-04
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Output inverter
Figure 15. Power dissipation as a
function of heatsink temperature
Output inverter IGBT
Figure 16. Collector current as a
function of heatsink temperature
Output inverter IGBT
Ptot = f (Th)
Ic = f (Th)
50
Ptot (W)
IC (A)
100
40
75
30
50
20
25
10
0
0
0
50
100
150
o
Th ( C)
0
200
50
100
150
o
Th ( C)
200
parameter: Tj= 175 ºC
parameter: Tj= 175 ºC
VGE=
15 V
Figure 17. Power dissipation as a
function of heatsink temperature
Output inverter FRED
Figure 18. Forward current as a
function of heatsink temperature
Output inverter FRED
Ptot = f (Th)
IF = f (Th)
75
IF (A)
Ptot (W)
50
60
40
45
30
30
20
15
10
0
0
0
50
100
150
o
Th ( C)
200
0
100
150
o
Th ( C) 200
parameter: Tj= 175 ºC
parameter: Tj= 175 ºC
Copyright by Vincotech
50
7
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Thermistor
Figure 19. Typical NTC characteristic
as afunction of temperature
RT = f (T)
NTC-typical temperature characteristic
R/
25000
20000
15000
10000
5000
0
25
50
75
Copyright by Vincotech
100
T (°C)
125
8
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Switching definitions
General conditions:
Figure 1.
Tj=
125 °C
Rgon=
Turn-off Switching Waveforms &
definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Output inverter IGBT
Figure 2.
8
Rgoff=
8
Turn-on Switching Waveforms &
definition of tdon, tEon
(tEon = integrating time for Eon)
Output inverter IGBT
320
140
120
Ic
280
tdoff
100
240
Uce 90%
Uge 90%
80
200
60
Ic
160
%
120
%
tEoff
40
20
Uce
80
0
Uge
tdon
Ic 1%
40
Uce
Uge
Uge10%
-20
Uce3%
Ic10%
0
-40
-0,3
tEon
-40
-0,2
-0,1
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdoff=
tEoff=
Figure 3.
0
0,1
-15
15
300
30
0,13
0,47
0,2
0,3
time (us)
0,4
0,5
0,6
0,7
2,5
V
V
V
A
us
us
2,6
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdon=
tEon=
Turn-off Switching Waveforms &
definition of tf
Output inverter IGBT
Figure 4.
140
2,7
-15
15
300
30
0,06
0,15
2,8
time(us)
2,9
3
3,1
V
V
V
A
us
us
Turn-on Switching Waveforms &
definition of tr
Output inverter IGBT
300
Ic
120
260
fitted
Ic
Uce
220
100
Ic 90%
180
80
% 140
Ic 60%
% 60
Uce
40
100
Ic 40%
Ic90%
tr
60
20
Ic10%
tf
0
20
Ic10%
-20
-0,15
-0,05
0,05
0,15
time (us)
0,25
0,35
-20
2,75
0,45
Uc(100%)=
300 V
Ic(100%)=
30 A
tf= 0,114 us
Copyright by Vincotech
2,775
2,8
2,825
time(us)
2,85
2,875
2,9
Uc(100%)= 300 V
Ic(100%)=
30 A
tr= 0,012 us
9
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Switching definitions
Figure 5.
Turn-off Switching Waveforms &
definition of tEoff
Output inverter IGBT
Figure 6.
120
Turn-on Switching Waveforms &
definition of tEon
Output inverter IGBT
120
Eon
Eoff
100
100
Poff
80
80
60
60
Pon
%
40
%40
20
20
Uge10%
0
Uce3%
0
tEoff
Uge90%
tEon
Ic 1%
-20
-20
-0,2
-0,1
0
Poff(100%)=
Eoff(100%)=
tEoff=
0,1
0,2
0,3
time (us)
0,4
0,5
0,6
2,6
0,7
2,7
2,8
2,9
3
3,1
time(us)
8,97 kW
0,87 mJ
0,47 us
Pon(100%)=
Eon(100%)=
tEon=
Figure 7. Gate voltage vs Gate charge
Figure 8.
Output inverter IGBT
20
120
15
80
8,97 kW
0,24 mJ
0,15 us
Turn-off Switching Waveforms &
definition of trr
Output inverter FRED
Id
trr
40
10
0
Uge (V)
5
Ud
-40
IRRM10%
%
0
-80
-5
-120
fitted
-10
-160
-15
-200
-20
-100
IRRM90%
IRRM100%
-240
0
100
200
300
2,6
400
2,7
2,8
2,9
time(us)
Qg (nC)
Ugeoff=
Ugeon=
Uc(100%)=
Ic(100%)=
Qg=
-15
15
300
30
365
V
V
V
A
nC
Copyright by Vincotech
Ud(100%)=
Id(100%)=
IRRM(100%)=
trr=
10
300
30
59
0,07
3
3,1
3,2
V
A
A
us
Revision: 1
V23990-P704-F-PM
final data sheet
flow 90PACK 1 600V/ 30A
V23990-P704-F-01-14
Switching definitions
Figure 9.
Turn-on Switching Waveforms &
definition of tQrr
(tQrr= integrating time for Qrr)
Output inverter FRED
Figure 10.
Turn-on Switching Waveforms &
definition of tErec
(tErec= integrating time for Erec)
Output inverter FRED
220
150
Qrr
Prec
100
180
Id
50
tQint
140
0
%
-50
Erec
%
100
-100
60
tErec
-150
20
-200
-20
-250
2,6
2,7
2,8
2,9
3
time(us)
3,1
3,2
2,6
3,3
Id(100%)=
30 A
Qrr(100%)= 2,381 uC
tQint= 0,30 us
Copyright by Vincotech
2,7
Prec(100%)=
Erec(100%)=
tErec=
11
2,8
2,9
3
time(us)
3,1
3,2
3,3
8,97 kW
0,62 mJ
0,30 us
Revision: 1