V23990 P708 F D1 14

V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Maximum Ratings / Höchstzulässige Werte
Parameter
Condition
Symbol
Datasheet values
Unit
max.
Transistor Inverter
Transistor Wechselrichter
Collector-emitter break down voltage
Kollektor-Emitter-Sperrspannung
DC collector current
Kollektor-Dauergleichstrom
Repetitive peak collector current
Periodischer Kollektorspitzenstrom
Power dissipation per IGBT
Verlustleistung pro IGBT
Gate-emitter peak voltage
Gate-Emitter-Spitzenspannung
SC withstand time*
Kurzschlußverhalten*
max. Chip temperature
max. Chiptemperatur
VCE
Tj=Tjmax
Th=80°C,
Tc=80°C
tp limited by Tj max
Tj=Tjmax
Th=80°C
Tc=80°C
IC
Icpuls
Ptot
VGE
Tj150°C
VCC
VGE=15V
Tj=Tjmax
Th=80°C,
Tc=80°C
tSC
Tjmax
1200
18,7
24
45
V
A
A
41,9
64
±20
W
V
10
900
150
us
V
°C
Diode Inverter
Diode Wechselrichter
DC forward current
Dauergleichstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Power dissipation per Diode
Verlustleistung pro Diode
max. Chip temperature
max. Chiptemperatur
tp limited by Tj max
Tj=Tjmax
Th=80°C
Tc=80°C
IF
IFRM
Ptot
18
23,5
30
A
A
Tjmax
31
46
150
W
°C
Tstg
-40…+125
°C
Top
-40…+125
°C
Vis
4000
Vdc
min 12,7
mm
min 12,7
mm
Thermal properties
Thermische Eigenschaften
Storage temperature
Lagertemperatur
Operation temperature
Betriebstemperatur
Insulation properties
Modulisolation
Insulation voltage
Isolationsspannung
Creepage distance
Kriechstrecke
Clearance
Luftstrecke
Additional notes and remarks:
Copyright by Vincotech
t=1min
* Allowed number of short circuits must be less than 1000 times, and time duration
between short circuits should be more than 1 second!
1
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Characteristic values/ Charateristische Werte
Description
Transistor Inverter
Transistor Wechselrichter
Gate emitter threshold voltage
Symbol
VGE(th)
Gate-Schwellenspannung
Collector-emitter saturation voltage
Kollektor-Emitter Sättigungsspannung
Collector-emitter cut-off
Kollektor-Emitter Reststrom
Gate-emitter leakage current
Gate-Emitter Reststrom
Integrated Gate resistor
Integrirter Gate Widerstand
Turn-on delay time
Einschaltverzögerungszeit
Rise time
Anstiegszeit
Turn-off delay time
Abschaltverzögerungszeit
Fall time
Fallzeit
Turn-on energy loss per pulse
Einschaltverlustenergie pro Puls
Turn-off energy loss per pulse
Abschaltverlustenergie pro Puls
Input capacitance
Eingangskapazität
Output capacitance
Ausgangskapazität
Reverse transfer capacitance
Rückwirkungskapazität
Gate charge
Gate Ladung
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
Coupled thermal resistance inverter diode-transistor
Gekoppelte Wärmewiderstand Wechselrichter Diode-Transistor
Coupled thermal resistance inverter transistor-transistor
Gekoppelte Wärmewiderstand Wechselrichter Transistor-Transistor
Conditions
T(C°)
Other conditions
(Rgon-Rgoff)
Tj=25°C
VCE=VGE
VR(V)
VGE(V) VCE(V)
VGS(V) VDS(V)
IC(A)
IF(A)
Id(A)
600u
Datasheet values
Unit
Min
Typ
Max
5
5,8
6,5
V
1,66
1,93
2,2
V
Tj=125°C
VCE(sat) Tj=25°C
Tj=125°C
ICES
Tj=25°C
Tj=125°C
IGES Tj=25°C
Tj=150°C
Rgint
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coss
Crss
QGate
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
15
15
0
1200
0,25
mA
20
0
200
nA
none
Rg=64Ohm
±15
600
15
RthJC
ns
217
Rg=64Ohm
±15
600
15
ns
24
Rg=64Ohm
±15
600
15
ns
392
Rg=64Ohm
±15
600
15
ns
167
±15
mWs
1,75
±15
mWs
f=1MHz
0
25
1,59
1,1
f=1MHz
0
25
0,058
nF
f=1MHz
0
25
0,048
nF
nF
nC
Thermal grease
thickness50um
Warmeleitpaste
Dicke50um = 0,61 W/mK
RthJH
Ohm
1,67
K/W
K/W
RthJH
K/W
RthJH
K/W
Diode Inverter
Diode Wechselrichter
Diode forward voltage
Durchlaßspannung
Peak reverse recovery current
Rückstromspitze
Reverse recovery time
Sperreverzögerungszeit
Reverse recovered charge
Sperrverzögerungsladung
Reverse recovered energy
Sperrverzögerungsenergie
Thermal resistance chip to heatsink per chip
Wärmewiderstand Chip-Kühlkörper pro Chip
Thermal resistance chip to case per chip
Wärmewiderstand Chip-Gehause pro Chip
Coupled thermal resistance inverter transistor-diode
Gekoppelte Wärmewiderstand Wechselrichter Transistor-Diode
Coupled thermal resistance inverter diode-diode
Gekoppelte Wärmewiderstand Wechselrichter Diode-Diode
Copyright by Vincotech
VF
IRM
trr
Qrr
Erec
RthJH
RthJC
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
15
Vr=600V
di/dt=600 A/μs
Vr=600V
di/dt=600 A/μs
Vr=600V
di/dt=600 A/μs
±15
600
1,66
1,62
2,3
15
V
A
21,3
±15
600
15
ns
448
±15
600
15
uC
3,13
±15
600
15
mWs
1,18
Thermal grease
thickness50um
Warmeleitpaste
Dicke50um = 0,61 W/mK
2,29
K/W
K/W
RthJH
K/W
RthJH
K/W
2
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Output inverter
Figure 1.
Typical output characteristics
Output inverter IGBT
Figure 2.
Typical output characteristics
Output inverter IGBT
Ic= f(VCE)
Ic= f(VCE)
40
IC (A)
IC (A)
40
32
32
24
24
16
16
8
8
0
0
0
1
2
3
4
VCE (V)
5
0
1
2
3
4
VCE (V)
parameter: tp = 250 us Tj = 25 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
parameter: tp = 250 us Tj = 125 °C
VGE parameter:
from:
7 V to
17 V
in
1 V steps
Figure 3.
Figure 4.
Typical transfer characteristics
Output inverter IGBT
Ic= f(VGE)
18
5
Typical diode forward current as
a function of forward voltage
IF=f(VF)
Output inverter FRED
IF (A)
IC (A)
40
25 oC
15
32
12
125 oC
24
9
125 oC
16
6
25 oC
8
3
0
0
0
2
4
6
8
10 V GE (V) 12
parameter: tp = 250 us VCE =
Copyright by Vincotech
0
10 V
0,5
1
1,5
2
2,5
VF (V) 3
parameter: tp = 250 us
3
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Output inverter
Figure 5.
Typical switching energy losses
as a function of collector current
Output inverter IGBT
Figure 6.
Typical switching energy losses
as a function of gate resistor
Output inverter IGBT
E = f (RG)
E = f (Ic)
E (mWs)
E (mWs)
4
Eon
4
3,2
3,2
Eoff
Eon
2,4
2,4
1,6
1,6
Eoff
Erec
Erec
0,8
0,8
0
0
0
5
10
15
20
25 I C (A)
0
30
30
60
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Rgon=
64 Rgoff=
64 inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Ic =
15 A
Figure 7.
Figure 8.
Typical switching times as a
function of collector current
Output inverter IGBT
90
120 R G ( : ) 150
Typical switching times as a
function of gate resistor
Output inverter IGBT
t = f (RG)
t = f (Ic)
1
t ( Ps)
t ( Ps)
1
tdoff
tdoff
tdon
tdon
tf
0,1
0,1
tf
tr
tr
0,01
0,01
0,001
0,001
0
5
10
15
20
25 IC (A)
30
0
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Rgon=
64 Rgoff=
64 Copyright by Vincotech
30
60
90
120 R G ( : ) 150
inductive load, Tj = 125 °C
VCE = 600 V
VGE= ±15 V
Ic =
15 A
4
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Output inverter
Figure 9.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
Output inverter FRED diode
Figure 10. Typical reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
trr = f (Rgon)
IRRM = f (Rgon)
70
t rr( Ps)
IrrM (A)
0,7
0,6
60
0,5
50
0,4
40
0,3
30
0,2
20
0,1
10
0
0
0
30
Tj =
VR =
IF=
VGE=
60
125
600
15
±15
90
120 R Gon ( : ) 150
0
°C
V
A
V
60
Tj =
VR =
IF=
VGE=
Figure 11. Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Output inverter FRED diode
125
600
15
±15
90
120 R Gon ( : ) 150
°C
V
A
V
Figure 12. Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
Output inverter FRED diode
dI0/dt,dIrec/dt= f (Rgon)
Qrr = f (Rgon)
4
3500
direc / dt (A/ Ps)
Qrr ( PC)
30
3,2
3000
2500
2,4
2000
1500
1,6
1000
dI0/dt
dIrec/dt
0,8
500
0
0
0
30
Tj =
VR =
IF=
VGE=
60
125
600
15
±15
90
120 R Gon ( :) 150
0
°C
V
A
V
Copyright by Vincotech
30
Tj =
VR =
IF=
VGE=
5
60
125
600
15
±15
90
120 R Gon ( :) 150
°C
V
A
V
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Output inverter
Figure 13. IGBT transient thermal impedance
as a function of pulse width
Figure 14. FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
1
1
10
ZthJH (K/W)
ZthJH (K/W)
10
100
0
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
-1
10
-2
10
10-2
10-5
10-4
10-3
10-2
Parameter: D = tp / T
10-1
100 t p (s)
10-5
101
RthJH= 1,67 K/W
10-4
10-3
10-2
Parameter: D = tp / T
IGBT thermal model values
FRED thermal model values
R (C/W)
R (C/W)
0,08
0,38
0,69
0,34
0,10
0,08
Tau (s)
3,4E+00
5,1E-01
1,3E-01
1,9E-02
3,1E-03
3,3E-04
Copyright by Vincotech
6
0,05
0,20
0,84
0,70
0,32
0,20
10-1
100
t p (s)
101
RthJH= 2,29 K/W
Tau (s)
1,0E+01
1,1E+00
1,7E-01
4,5E-02
7,6E-03
7,0E-04
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Output inverter
Figure 15. Power dissipation as a
function of heatsink temperature
Output inverter IGBT
Figure 16. Collector current as a
function of heatsink temperature
Output inverter IGBT
Ptot = f (Th)
Ic = f (Th)
24
IC (A)
Ptot (W)
100
20
80
16
60
12
40
8
20
4
0
0
0
50
100
150
o
Th ( C)
0
200
50
100
150
Th ( o C)
200
parameter: Tj= 150 ºC
parameter: Tj= 150 ºC
VGE=
15 V
Figure 17. Power dissipation as a
function of heatsink temperature
Output inverter FRED
Figure 18. Forward current as a
function of heatsink temperature
Output inverter FRED
Ptot = f (Th)
IF = f (Th)
75
IF (A)
Ptot (W)
24
20
60
16
45
12
30
8
15
4
0
0
0
50
100
150
o
Th ( C)
0
200
100
150
Th ( o C) 200
parameter: Tj= 150 ºC
parameter: Tj= 150 ºC
Copyright by Vincotech
50
7
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Thermistor
Figure 1.
Typical NTC characteristic
as afunction of temperature
RT = f (T)
NTC-typical temperature characteristic
R/
25000
20000
15000
10000
5000
0
25
50
75
Copyright by Vincotech
100
T (°C) 125
8
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Switching definitions
General conditions:
Figure 1.
Tj=
125 °C
Rgon=
Turn-off Switching Waveforms &
definition of tdoff, tEoff
(tEoff = integrating time for Eoff)
Output inverter IGBT
Figure 2.
64 Rgoff=
64 Turn-on Switching Waveforms &
definition of tdon, tEon
(tEon = integrating time for Eon)
Output inverter IGBT
280
140
120
Ic
240
tdoff
100
200
Uce 90%
Uge 90%
80
160
Ic
%
120
%
60
40
80
Ic 1%
20
Uce
Uge
tEoff
Uce
tdon
40
Uge
0
Uge10%
0
-20
-0,3
-0,15
0
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdoff=
tEoff=
Figure 3.
0,15
-15
15
600
15
0,39
0,67
0,3
0,45
time (us)
0,6
0,75
tEon
-40
0,9
2,6
V
V
V
A
us
us
2,75
Uge(0%)=
Uge(100%)=
Uc(100%)=
Ic(100%)=
tdon=
tEon=
Turn-off Switching Waveforms &
definition of tf
Output inverter IGBT
Figure 4.
140
Uce3%
Ic10%
2,9
3,05
3,2
time(us)
-15
15
600
15
0,22
0,59
3,35
3,5
3,65
V
V
V
A
us
us
Turn-on Switching Waveforms &
definition of tr
Output inverter IGBT
260
Ic
fitted
120
220
Uce
Ic
100
180
Ic 90%
80
140
%
Ic 60%
% 60
Uce
100
40
Ic90%
Ic 40%
tr
60
20
Ic10%
20
tf
0
-20
2,95
-20
0,1
0,2
0,3
0,4
0,5
time (us)
0,6
0,7
0,8
Uc(100%)=
600 V
Ic(100%)=
15 A
tf= 0,172 us
Copyright by Vincotech
Ic10%
3
3,05
3,1
3,15
time(us)
3,2
3,25
3,3
Uc(100%)= 600 V
Ic(100%)=
15 A
tr= 0,024 us
9
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Switching definitions
Figure 5.
Turn-off Switching Waveforms &
definition of tEoff
Output inverter IGBT
Figure 6.
120
Turn-on Switching Waveforms &
definition of tEon
Output inverter IGBT
220
Poff
Eoff
Pon
100
180
80
140
60
Eon
100
%
%
40
60
20
Uge10%
20
0
Uge90%
-20
-0,3
-0,1
0,1
Poff(100%)=
Eoff(100%)=
tEoff=
Uce3%
tEon
tEoff
Ic 1%
0,3
0,5
time (us)
0,7
-20
0,9
2,7
1,1
8,93 kW
1,58 mJ
0,67 us
2,85
Pon(100%)=
Eon(100%)=
tEon=
Figure 7. Gate voltage vs Gate charge
Figure 8.
Output inverter IGBT
20
120
15
80
3
3,15
time(us)
3,3
3,45
3,6
8,93 kW
1,76 mJ
0,59 us
Turn-off Switching Waveforms &
definition of trr
Output inverter FRED
Id
trr
10
40
Ud
Uge (V)
5
0
%
0
IRRM10%
-40
-5
-80
-10
fitted
-120
-15
IRRM90%
IRRM100%
-160
-20
-50
0
Ugeoff=
-15
Ugeon=
15
Uc(100%)=
600
Ic(100%)=
15
Qg= 160,8
50
Qg (nC)
100
150
2,8
200
V
V
V
A
nC
Copyright by Vincotech
2,95
Ud(100%)=
Id(100%)=
IRRM(100%)=
trr=
10
3,1
600
15
21
0,45
3,25
3,4
time(us)
3,55
3,7
3,85
V
A
A
us
Revision: 1
V23990-P708-F-PM
final data sheet
V23990-P708-F-01-14
flow 90PACK 1 1200V/ 15A
Switching definitions
Figure 9.
Turn-on Switching Waveforms &
definition of tQrr
(tQrr= integrating time for Qrr)
Output inverter FRED
Figure 10.
150
Turn-on Switching Waveforms &
definition of tErec
(tErec= integrating time for Erec)
Output inverter FRED
120
Qrr
Erec
100
100
Id
80
50
tErec
tQint
60
0
%
%
-50
40
-100
20
-150
0
Prec
-20
-200
2,7
2,9
Id(100%)=
Qrr(100%)=
tQint=
3,1
3,3
3,5
time(us)
3,7
3,9
2,7
4,1
15 A
3,11 uC
0,60 us
Copyright by Vincotech
2,9
Prec(100%)=
Erec(100%)=
tErec=
11
3,1
3,3
3,5
time(us)
3,7
3,9
4,1
8,93 kW
1,17 mJ
0,60 us
Revision: 1