V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time* Kurzschlußverhalten* max. Chip temperature max. Chiptemperatur VCE Tj=Tjmax Th=80°C, Tc=80°C tp limited by Tj max Tj=Tjmax Th=80°C Tc=80°C IC Icpuls Ptot VGE Tj150°C VCC VGE=15V Tj=Tjmax Th=80°C, Tc=80°C tSC Tjmax 1200 18,7 24 45 V A A 41,9 64 ±20 W V 10 900 150 us V °C Diode Inverter Diode Wechselrichter DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur tp limited by Tj max Tj=Tjmax Th=80°C Tc=80°C IF IFRM Ptot 18 23,5 30 A A Tjmax 31 46 150 W °C Tstg -40…+125 °C Top -40…+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm Thermal properties Thermische Eigenschaften Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke Additional notes and remarks: Copyright by Vincotech t=1min * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! 1 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Characteristic values/ Charateristische Werte Description Transistor Inverter Transistor Wechselrichter Gate emitter threshold voltage Symbol VGE(th) Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Gate charge Gate Ladung Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Coupled thermal resistance inverter diode-transistor Gekoppelte Wärmewiderstand Wechselrichter Diode-Transistor Coupled thermal resistance inverter transistor-transistor Gekoppelte Wärmewiderstand Wechselrichter Transistor-Transistor Conditions T(C°) Other conditions (Rgon-Rgoff) Tj=25°C VCE=VGE VR(V) VGE(V) VCE(V) VGS(V) VDS(V) IC(A) IF(A) Id(A) 600u Datasheet values Unit Min Typ Max 5 5,8 6,5 V 1,66 1,93 2,2 V Tj=125°C VCE(sat) Tj=25°C Tj=125°C ICES Tj=25°C Tj=125°C IGES Tj=25°C Tj=150°C Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Crss QGate Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 15 15 0 1200 0,25 mA 20 0 200 nA none Rg=64Ohm ±15 600 15 RthJC ns 217 Rg=64Ohm ±15 600 15 ns 24 Rg=64Ohm ±15 600 15 ns 392 Rg=64Ohm ±15 600 15 ns 167 ±15 mWs 1,75 ±15 mWs f=1MHz 0 25 1,59 1,1 f=1MHz 0 25 0,058 nF f=1MHz 0 25 0,048 nF nF nC Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH Ohm 1,67 K/W K/W RthJH K/W RthJH K/W Diode Inverter Diode Wechselrichter Diode forward voltage Durchlaßspannung Peak reverse recovery current Rückstromspitze Reverse recovery time Sperreverzögerungszeit Reverse recovered charge Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Coupled thermal resistance inverter transistor-diode Gekoppelte Wärmewiderstand Wechselrichter Transistor-Diode Coupled thermal resistance inverter diode-diode Gekoppelte Wärmewiderstand Wechselrichter Diode-Diode Copyright by Vincotech VF IRM trr Qrr Erec RthJH RthJC Tj=25°C Tj=150°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 15 Vr=600V di/dt=600 A/μs Vr=600V di/dt=600 A/μs Vr=600V di/dt=600 A/μs ±15 600 1,66 1,62 2,3 15 V A 21,3 ±15 600 15 ns 448 ±15 600 15 uC 3,13 ±15 600 15 mWs 1,18 Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK 2,29 K/W K/W RthJH K/W RthJH K/W 2 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Output inverter Figure 1. Typical output characteristics Output inverter IGBT Figure 2. Typical output characteristics Output inverter IGBT Ic= f(VCE) Ic= f(VCE) 40 IC (A) IC (A) 40 32 32 24 24 16 16 8 8 0 0 0 1 2 3 4 VCE (V) 5 0 1 2 3 4 VCE (V) parameter: tp = 250 us Tj = 25 °C VGE parameter: from: 7 V to 17 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGE parameter: from: 7 V to 17 V in 1 V steps Figure 3. Figure 4. Typical transfer characteristics Output inverter IGBT Ic= f(VGE) 18 5 Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED IF (A) IC (A) 40 25 oC 15 32 12 125 oC 24 9 125 oC 16 6 25 oC 8 3 0 0 0 2 4 6 8 10 V GE (V) 12 parameter: tp = 250 us VCE = Copyright by Vincotech 0 10 V 0,5 1 1,5 2 2,5 VF (V) 3 parameter: tp = 250 us 3 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Output inverter Figure 5. Typical switching energy losses as a function of collector current Output inverter IGBT Figure 6. Typical switching energy losses as a function of gate resistor Output inverter IGBT E = f (RG) E = f (Ic) E (mWs) E (mWs) 4 Eon 4 3,2 3,2 Eoff Eon 2,4 2,4 1,6 1,6 Eoff Erec Erec 0,8 0,8 0 0 0 5 10 15 20 25 I C (A) 0 30 30 60 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 64 Rgoff= 64 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 15 A Figure 7. Figure 8. Typical switching times as a function of collector current Output inverter IGBT 90 120 R G ( : ) 150 Typical switching times as a function of gate resistor Output inverter IGBT t = f (RG) t = f (Ic) 1 t ( Ps) t ( Ps) 1 tdoff tdoff tdon tdon tf 0,1 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 5 10 15 20 25 IC (A) 30 0 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Rgon= 64 Rgoff= 64 Copyright by Vincotech 30 60 90 120 R G ( : ) 150 inductive load, Tj = 125 °C VCE = 600 V VGE= ±15 V Ic = 15 A 4 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Output inverter Figure 9. Typical reverse recovery time as a function of IGBT turn on gate resistor Output inverter FRED diode Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 70 t rr( Ps) IrrM (A) 0,7 0,6 60 0,5 50 0,4 40 0,3 30 0,2 20 0,1 10 0 0 0 30 Tj = VR = IF= VGE= 60 125 600 15 ±15 90 120 R Gon ( : ) 150 0 °C V A V 60 Tj = VR = IF= VGE= Figure 11. Typical reverse recovery charge as a function of IGBT turn on gate resistor Output inverter FRED diode 125 600 15 ±15 90 120 R Gon ( : ) 150 °C V A V Figure 12. Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 4 3500 direc / dt (A/ Ps) Qrr ( PC) 30 3,2 3000 2500 2,4 2000 1500 1,6 1000 dI0/dt dIrec/dt 0,8 500 0 0 0 30 Tj = VR = IF= VGE= 60 125 600 15 ±15 90 120 R Gon ( :) 150 0 °C V A V Copyright by Vincotech 30 Tj = VR = IF= VGE= 5 60 125 600 15 ±15 90 120 R Gon ( :) 150 °C V A V Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Output inverter Figure 13. IGBT transient thermal impedance as a function of pulse width Figure 14. FRED transient thermal impedance as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 1 1 10 ZthJH (K/W) ZthJH (K/W) 10 100 0 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 -2 10 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 10-5 101 RthJH= 1,67 K/W 10-4 10-3 10-2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,08 0,38 0,69 0,34 0,10 0,08 Tau (s) 3,4E+00 5,1E-01 1,3E-01 1,9E-02 3,1E-03 3,3E-04 Copyright by Vincotech 6 0,05 0,20 0,84 0,70 0,32 0,20 10-1 100 t p (s) 101 RthJH= 2,29 K/W Tau (s) 1,0E+01 1,1E+00 1,7E-01 4,5E-02 7,6E-03 7,0E-04 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Output inverter Figure 15. Power dissipation as a function of heatsink temperature Output inverter IGBT Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 24 IC (A) Ptot (W) 100 20 80 16 60 12 40 8 20 4 0 0 0 50 100 150 o Th ( C) 0 200 50 100 150 Th ( o C) 200 parameter: Tj= 150 ºC parameter: Tj= 150 ºC VGE= 15 V Figure 17. Power dissipation as a function of heatsink temperature Output inverter FRED Figure 18. Forward current as a function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 75 IF (A) Ptot (W) 24 20 60 16 45 12 30 8 15 4 0 0 0 50 100 150 o Th ( C) 0 200 100 150 Th ( o C) 200 parameter: Tj= 150 ºC parameter: Tj= 150 ºC Copyright by Vincotech 50 7 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Thermistor Figure 1. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R/ 25000 20000 15000 10000 5000 0 25 50 75 Copyright by Vincotech 100 T (°C) 125 8 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Switching definitions General conditions: Figure 1. Tj= 125 °C Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter IGBT Figure 2. 64 Rgoff= 64 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter IGBT 280 140 120 Ic 240 tdoff 100 200 Uce 90% Uge 90% 80 160 Ic % 120 % 60 40 80 Ic 1% 20 Uce Uge tEoff Uce tdon 40 Uge 0 Uge10% 0 -20 -0,3 -0,15 0 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. 0,15 -15 15 600 15 0,39 0,67 0,3 0,45 time (us) 0,6 0,75 tEon -40 0,9 2,6 V V V A us us 2,75 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdon= tEon= Turn-off Switching Waveforms & definition of tf Output inverter IGBT Figure 4. 140 Uce3% Ic10% 2,9 3,05 3,2 time(us) -15 15 600 15 0,22 0,59 3,35 3,5 3,65 V V V A us us Turn-on Switching Waveforms & definition of tr Output inverter IGBT 260 Ic fitted 120 220 Uce Ic 100 180 Ic 90% 80 140 % Ic 60% % 60 Uce 100 40 Ic90% Ic 40% tr 60 20 Ic10% 20 tf 0 -20 2,95 -20 0,1 0,2 0,3 0,4 0,5 time (us) 0,6 0,7 0,8 Uc(100%)= 600 V Ic(100%)= 15 A tf= 0,172 us Copyright by Vincotech Ic10% 3 3,05 3,1 3,15 time(us) 3,2 3,25 3,3 Uc(100%)= 600 V Ic(100%)= 15 A tr= 0,024 us 9 Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter IGBT Figure 6. 120 Turn-on Switching Waveforms & definition of tEon Output inverter IGBT 220 Poff Eoff Pon 100 180 80 140 60 Eon 100 % % 40 60 20 Uge10% 20 0 Uge90% -20 -0,3 -0,1 0,1 Poff(100%)= Eoff(100%)= tEoff= Uce3% tEon tEoff Ic 1% 0,3 0,5 time (us) 0,7 -20 0,9 2,7 1,1 8,93 kW 1,58 mJ 0,67 us 2,85 Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. Output inverter IGBT 20 120 15 80 3 3,15 time(us) 3,3 3,45 3,6 8,93 kW 1,76 mJ 0,59 us Turn-off Switching Waveforms & definition of trr Output inverter FRED Id trr 10 40 Ud Uge (V) 5 0 % 0 IRRM10% -40 -5 -80 -10 fitted -120 -15 IRRM90% IRRM100% -160 -20 -50 0 Ugeoff= -15 Ugeon= 15 Uc(100%)= 600 Ic(100%)= 15 Qg= 160,8 50 Qg (nC) 100 150 2,8 200 V V V A nC Copyright by Vincotech 2,95 Ud(100%)= Id(100%)= IRRM(100%)= trr= 10 3,1 600 15 21 0,45 3,25 3,4 time(us) 3,55 3,7 3,85 V A A us Revision: 1 V23990-P708-F-PM final data sheet V23990-P708-F-01-14 flow 90PACK 1 1200V/ 15A Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter FRED Figure 10. 150 Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter FRED 120 Qrr Erec 100 100 Id 80 50 tErec tQint 60 0 % % -50 40 -100 20 -150 0 Prec -20 -200 2,7 2,9 Id(100%)= Qrr(100%)= tQint= 3,1 3,3 3,5 time(us) 3,7 3,9 2,7 4,1 15 A 3,11 uC 0,60 us Copyright by Vincotech 2,9 Prec(100%)= Erec(100%)= tErec= 11 3,1 3,3 3,5 time(us) 3,7 3,9 4,1 8,93 kW 1,17 mJ 0,60 us Revision: 1