V23990-P723-F04-PM final data sheet fastPACK0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P723-F04-01-14 P723-F04 600V/60A Symbol Datasheet values Unit max. DC link Capacitor DC link Kondensator Max.DC voltage Max. Gleichspannung TC=25°C UMAX 500 V VCE 600 V Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Kollektor-Dauergleichstrom Repetitive peak collector current Periodischer Kollektorspitzenstrom Power dissipation per IGBT Verlustleistung pro IGBT Gate-emitter peak voltage Gate-Emitter-Spitzenspannung SC withstand time* Kurzschlußverhalten* max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by Tj max IC 35 A Icpuls 224 A Tj=Tjmax Ptot 93 W VGE ±20 V tSC 6 us Tjmax 150 °C Tj=Tjmax Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Copyright by Vincotech Th=80°C, Tc=80°C tp limited by Tj max IF 34 A IFRM 150 A Tj=Tjmax Ptot 47 W Tjmax 150 °C Tj=Tjmax Th=80°C Tc=80°C 1 Revision: 1 V23990-P723-F04-PM final data sheet fastPACK0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P723-F04-01-14 P723-F04 600V/60A Symbol Datasheet values Unit max. Thermal properties Thermische Eigenschaften Storage temperature Lagertemperatur Operation temperature Betriebstemperatur Tstg -40…+125 °C Top -40…+125 °C Vis 4000 Vdc min 12,7 mm min 12,7 mm Insulation properties Modulisolation Insulation voltage Isolationsspannung Creepage distance Kriechstrecke Clearance Luftstrecke Additional notes and remarks: Copyright by Vincotech t=1min * Allowed number of short circuits must be less than 1000 times, and time duration between short circuits should be more than 1 second! 2 Revision: 1 V23990-P723-F04-PM final data sheet fastPACK0 H 2nd gen V23990-P723-F04-01-14 P723-F04 Characteristic values/ Charateristische Werte Description Symbol Conditions T(C°) Unit Datasheet values Other conditions (Rgon-Rgoff) VGE(V) VGS(V) VCE(V) IC(A) IF(A) VDS(V) Id(A) Min Typ Max 216 270 324 nF 3 4 5 V Capacitor Kondensator C value C Wert C Transistor H-bridge(IGBT) Transistor H-Brücke(IGBT) Gate emitter threshold voltage Gate-Schwellenspannung Collector-emitter saturation voltage Kollektor-Emitter Sättigungsspannung Collector-emitter cut-off Kollektor-Emitter Reststrom Gate-emitter leakage current Gate-Emitter Reststrom Integrated Gate resistor Integrirter Gate Widerstand Turn-on delay time Einschaltverzögerungszeit Rise time Anstiegszeit Turn-off delay time Abschaltverzögerungszeit Fall time Fallzeit Turn-on energy loss per pulse Einschaltverlustenergie pro Puls Turn-off energy loss per pulse Abschaltverlustenergie pro Puls Input capacitance Eingangskapazität Output capacitance Ausgangskapazität Reverse transfer capacitance Rückwirkungskapazität Thermal resistance chip to heatsink per chip VGE(th) VCE(sat) ICES IGES Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=VGE 0.6m 15 60 0 600 20 0 2,7 3,22 Rgint td(on) tr td(off) tf Eon Eoff Cies Coss Cies 3,7 V 0,35 mA 300 nA none Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Rgoff=2 Rgon=4 Rgoff=2 Rgon=4 Rgoff=2 Rgon=4 Rgoff=2 Rgon=4 Rgoff=2 Rgon=4 Rgoff=2 Rgon=4 f=1MHz ns 15 400 60 18 15 400 60 16 15 400 60 206 15 400 60 12 15 400 60 1,1 15 0 400 25 60 0,96 3 ns ns ns mWs mWs Wärmewiderstand Chip-Kühlkörper pro Chip nF f=1MHz 0 25 0,3 nF f=1MHz 0 25 0,18 nF 0,76 K/W Thermal grease thickness50um Warmeleitpaste Dicke50um = 0,61 W/mK RthJH Diode H-bridge Diode H-Brücke Diode forward voltage VF Durchlaßspannung Peak reverse recovery current IRM Rückstromspitze Reverse recovery time trr Sperreverzögerungszeit Reverse recovered charge Qrr Sperrverzögerungsladung Reverse recovered energy Sperrverzögerungsenergie Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Erec Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 60 1,2 2,3 V $ Rgon=4 15 400 60 100 ns Rgon=4 15 400 60 126 Rgon=4 15 400 60 4,5 Rgon=4 15 400 60 1,32 uC mWs Thermal grease thickness RthJH 1,6 1,56 1,49 K/W WarmeleitpasteDicke50u RthJC NTC-Thermistor NTC-Widerstand Rated resistance Nennwiderstand Deviation of R100 Abweichung von R100 Power dissipation given Epcos-Typ Verlustleistung Epcos-Typ angeben B-value B-Wert Copyright by Vincotech R25 Tj=25°C Tol. ±5% DR/R Tc=100°C R100=1503 P Tj=25°C B(25/100) Tj=25°C Tol. ±3% 3 20,9 22 23,1 kOhm 2,9 %/K 210 mW 3980 K Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen V23990-P723-F04 Output inverter Figure 1. Typical output characteristics Figure 2. Output inverter IGBT Typical output characteristics Output inverter IGBT Ic= f(V CE) Ic= f(V CE) 120 IC (A) IC (A) 120 100 100 80 80 60 60 40 40 20 20 0 0 0 1 2 3 VCE (V) 4 5 0 1 2 3 4 VCE (V) 5 parameter: tp = 250 us Tj = 25 °C VGE parameter: from: 6 V to 16 V in 1 V steps parameter: tp = 250 us Tj = 125 °C VGE parameter: from: 6 V to 16 V in 1 V steps Figure 3. Typical transfer characteristics Figure 4. Output inverter IGBT Ic= f(V GE) Typical diode forward current as a function of forward voltage IF=f(VF) Output inverter FRED IF (A) 120 IC (A) 60 100 25 oC 50 125 oC 80 40 60 125 oC 30 25 oC 40 20 20 10 0 0 0 0 2 4 6 V GE (V) parameter: tp = 250 us VCE = Copyright by Vincotech 0,5 1 1,5 2 VF (V) 2,5 8 10 V parameter: tp = 250 us 4 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen Output inverter Figure 5. Typical switching energy losses Figure 6. Typical switching energy losses as a function of gate resistor Output inverter IGBT as a function of collector current Output inverter IGBT E = f (RG) E = f (Ic) E (mWs) E (mWs) 3 3 Eon 2,5 2,5 Eon 2 2 Eoff 1,5 1,5 Erec 1 1 Erec Eoff 0,5 0,5 0 0 0 20 40 60 80 100 I C (A) 120 0 10 20 inductive load, Tj = 125 °C VCE = 400 V VGE= 15 V Rgon= 4 Rgoff= 2 inductive load, Tj = 125 °C VCE = 400 V VGE= 15 V Ic = 60 A Figure 7. Typical switching times as a Figure 8. R G ( : ) 40 30 function of collector current Output inverter IGBT Typical switching times as a function of gate resistor Output inverter IGBT t = f (Ic) t = f (R G) 1 tdoff t ( Ps) t ( Ps) 1 tdoff 0,1 0,1 tdon tdon tr tf 0,01 tf 0,01 tr 0,001 0,001 0 20 40 60 80 100 IC (A) 120 0 inductive load, Tj = 125 °C VCE = 400 V VGE= 15 V Rgon= 4 Rgoff= 2 Copyright by Vincotech 10 20 30 RG (:) 40 inductive load, Tj = 125 °C VCE = 400 V VGE= 15 V Ic = 60 A 5 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen Output inverter Figure 9. Typical reverse recovery time as a Figure 10. Typical reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode function of IGBT turn on gate resistor Output inverter FRED diode trr = f (Rgon) IRRM = f (Rgon) 120 t rr( Ps) IrrM (A) 0,25 100 0,2 80 0,15 60 0,1 40 0,05 20 0 0 0 10 Tj = VR = I F= VGE= 20 125 400 60 15 30 R Gon ( : ) 0 40 10 °C V A V Tj = VR = I F= VGE= Figure 11. Typical reverse recovery charge as a 125 400 60 15 30 R Gon ( : ) 40 °C V A V Figure 12. Typical rate of fall of forward function of IGBT turn on gate resistor Output inverter FRED diode and reverse recovery current as a function of IGBT turn on gate resistor Output inverter FRED diode dI0/dt,dIrec/dt= f (Rgon) Qrr = f (Rgon) 5 7000 direc / dt (A/ Ps) Qrr ( PC) 20 4 6000 5000 dI0/dt 3 4000 3000 2 dIrec/dt 2000 1 1000 0 0 0 10 Tj = VR = I F= VGE= 20 125 400 60 15 30 R Gon ( :) 0 40 °C V A V Copyright by Vincotech 10 Tj = VR = I F= VGE= 6 20 125 400 60 15 30 R Gon ( :) 40 °C V A V Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen Output inverter Figure 13. IGBT transient thermal impedance Figure 14. FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) 101 ZthJH (K/W) ZthJH (K/W) 100 100 -1 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 -1 10 10-2 10-2 10-5 10-4 10-3 10-2 Parameter: D = tp / T 10-1 100 t p (s) 10-5 101 RthJH= 0,76 K/W 10-4 10-3 10-2 Parameter: D = tp / T IGBT thermal model values FRED thermal model values R (C/W) R (C/W) 0,04 0,13 0,41 0,12 0,03 0,03 Tau (s) 4,9E+00 8,8E-01 1,7E-01 3,0E-02 4,9E-03 4,3E-04 Copyright by Vincotech 0,06 0,20 0,62 0,39 0,12 0,10 7 10-1 100 t p (s) 101 RthJH= 1,49 K/W Tau (s) 3,8E+00 5,1E-01 1,1E-01 2,2E-02 3,8E-03 3,3E-04 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen Output inverter Figure 15. Power dissipation as a Figure 16. Collector current as a function of heatsink temperature Output inverter IGBT function of heatsink temperature Output inverter IGBT Ptot = f (Th) Ic = f (Th) 80 IC (A) Ptot (W) 200 150 60 100 40 50 20 0 0 0 50 100 150 o Th ( C) 0 200 50 100 150 parameter: Tj = 150°C parameter: Tj = 150°C VGE= 15 V Figure 17. Power dissipation as a Figure 18. Forward current as a o Th ( C) 200 function of heatsink temperature Output inverter FRED function of heatsink temperature Output inverter FRED Ptot = f (Th) IF = f (Th) 120 IF (A) Ptot (W) 80 100 60 80 60 40 40 20 20 0 0 0 50 100 150 Th ( o C) 200 0 parameter: Tj = 150°C Copyright by Vincotech 50 100 150 Th ( o C) 200 parameter: Tj = 150°C 8 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen Thermistor Figure 1. Typical NTC characteristic as afunction of temperature RT = f (T) NTC-typical temperature characteristic R/R25 1,2 1,0 0,8 0,6 0,4 0,2 0,0 25 50 Copyright by Vincotech 75 100 T (°C) 125 9 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen V23990-P723-F04 Switching definitions General conditions: Figure 1. Tj= 125 °C Rgon= Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff) Output inverter IGBT 140 Figure 2. Rgoff= 2 Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon) Output inverter IGBT 280 tdoff1 120 4 tdoff2 240 Uce Uge 100 200 80 160 60 % 40 Ic % Ic 120 tEoff1 Uce 80 20 Uge tdon1 0 40 -20 0 Ic10% Uge10% -40 -0,1 tEon2 -40 0 Uge(0%)= Uge(100%)= Uc(100%)= Ic(100%)= tdoff= tEoff= Figure 3. 0,1 0 15 400 60 0,21 0,37 0,2 time (us) 0,3 0,4 0,5 2,6 2,65 without capacitor (P623-F04) with capacitor (P723-F04)) V V V A us us Uce3% tEon1 2,7 2,75 2,8 2,85 time(us) Uge(0%)= 0 V Uge(100%)= 15 V Uc(100%)= 400 V Ic(100%)= 60 A tdon= 0,02 us tEon= 0,12 us Turn-off Switching Waveforms & definition of tf Output inverter IGBT Figure 4. 2,9 2,95 3 without capacitor with capacitor Turn-on Switching Waveforms & definition of tr Output inverter IGBT 300 140 Ic 260 120 fitted Ic Uce 220 100 Ic 90% 180 80 % 140 Ic 60% % 60 Uce 40 100 Ic 40% Ic90% tr 60 20 Ic10% 20 0 Ic10% tf -20 -20 0,1 0,13 0,16 0,19 0,22 time (us) 0,25 0,28 2,6 0,31 Uc(100%)= 400 V Ic(100%)= 60 A tf= 0,013 us Copyright by Vincotech 2,65 2,7 2,75 2,8 time(us) 2,85 2,9 2,95 Uc(100%)= 400 V Ic(100%)= 60 A tr= 0,017 us 10 Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen V23990-P723-F04 Switching definitions Figure 5. Turn-off Switching Waveforms & definition of tEoff Output inverter IGBT Figure 6. Turn-on Switching Waveforms & definition of tEon Output inverter IGBT 150 120 Pon Eoff 100 Poff 120 Eon 80 90 60 % 60 % 40 30 20 Uce3% Uge10% 0 0 Uge90% tEoff tEon Ic 1% -30 -20 -0,2 -0,1 0 0,1 0,2 time (us) 0,3 0,4 2,5 0,5 2,6 Poff(100%)= 23,96 kW Eoff(100%)= 0,97 mJ tEoff= 0,37 us Pon(100%)= Eon(100%)= tEon= Figure 7. Gate voltage vs Gate charge Figure 8. Output inverter IGBT 2,7 2,8 time(us) 2,9 3 3,1 24 kW 1,06 mJ 0,12 us Turn-off Switching Waveforms & definition of trr Output inverter FRED 120 20 Id 80 trr 15 40 Uge (V) 10 0 Ud IRRM10% % -40 5 -80 0 -120 IRRM90% -5 IRRM100% -160 fitted -10 -100 -200 0 100 Ugeoff= 0 Ugeon= 15 Uc(100%)= 400 Ic(100%)= 60 Qg= 503,8 Copyright by Vincotech 200 300 Qg (nC) 400 500 2,5 600 V V V A nC 2,6 Ud(100%)= Id(100%)= IRRM(100%)= trr= 11 2,7 400 60 96 0,11 2,8 time(us) 2,9 3 3,1 V A A us Revision: 1 V23990-P723-F04-PM fastPACK0 H 2nd gen V23990-P723-F04 Switching definitions Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr= integrating time for Qrr) Output inverter FRED Figure 10. Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) Output inverter FRED 140 150 Id Prec Qrr 120 100 Erec 100 50 tQint 80 0 tErec % 60 % -50 40 -100 20 -150 0 -20 -200 2,5 2,65 2,8 time(us) 2,95 3,1 2,5 3,25 Id(100%)= 60 A Qrr(100%)= 4,211 uC tQint= 0,23 us Copyright by Vincotech 2,65 Prec(100%)= Erec(100%)= tErec= 12 2,8 time(us) 2,95 3,1 3,25 24 kW 1,24 mJ 0,23 us Revision: 1