10-FZ062TA030SM-P986D13 datasheet flow PFC 0 CD 600 V / 30 A Features ● ● ● ● ● flow 0 12mm housing High-efficient rectifier High-efficient IGBT H5 + Stealth 2 Diode Ultra-fast switching speed Integrated capacitors Thermistor Schematic Target applications ● SMPS ● Welding Types ● 10-FZ062TA030SM-P986D13 Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 650 V 28 A 90 A 57 W PFC Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s = 80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech T s = 80 °C 1 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit 600 V 26 A 90 A 48 W 150 °C 650 V 17 A 20 A 33 W 175 °C 1600 V 46 A 280 A 390 A s 59 W PFC Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T s = 80°C T j = T jmax T s = 80°C PFC Protection\ Current Transforme Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax T j = T jmax T s = 80°C T j = T jmax T s = 80°C Rectifier \ Shunt Protection Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 T j = T jmax T h = 80°C 50 Hz Single Half Sine Wave t p = 10 ms 50 Hz sine T j = 150°C T j = T jmax T h = 80°C 2 Surge current capability I t Total power dissipation P tot Maximum Junction Temperature T jmax 150 °C V MAX 1000 V T op -55…+125 °C DC Link Capacitor Maximum DC voltage Operation Temperature PFC Shunt DC forward current Power dissipation Copyright Vincotech IF T c =25°C 22 A P tot T c =105°C 5 W 2 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Maximum Ratings Tj = 25 °C, unless otherwise specified Parameter Symbol Condition Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min. 12,7 mm 9,42 mm Isolation Properties Isolation voltage V isol DC Voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p = 2s > 200 CTI 3 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj [°C] Unit Min Typ Max 3,3 4 4,7 25 1,69 2,22 125 1,92 PFC Switch Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE = V CE 0,0003 15 30 25 V V Collec tor-emitter c ut-off current I CES 0 650 25 40 µA Gate-emitter leakage c urrent I GES 20 0 25 120 nA Internal gate resistance Input capacitance none rg 2100 C ies f = 1MHz Reverse transfer capac itance C res Gate c harge Qg Ω 0 25 25 pF 7,7 15 520 30 25 70 nC 1,67 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material λ = 3,4 W /mK IGBT Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 16 Ω R gon = 16 Ω t d(off) 15/0 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 0,3 µC Q rFWD = 0,8 µC 4 400 30 25 125 25 125 25 125 25 125 25 125 25 125 25 23 10 11 144 159 4 7 0,445 0,715 0,132 0,225 ns mWs 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj [°C] Min Unit Typ Max 25 2,34 2,8 125 2,01 PFC Diode Static Forward voltage VF Reverse leakage c urrent Ir 30 600 25 100 V µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material λ = 3,4 W /mK 1,46 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 2682 A/µs 15/0 di /dt = 2448 A/µs 400 30 E rec (di rf/dt )max 25 125 25 125 25 125 25 125 25 125 18 28 16 45 0,269 0,790 0,046 0,100 4655 1857 A ns µC mWs A/µs PFC Protection\ Current Transforme Protection Diode Static Forward voltage VF Reverse leakage c urrent Ir 10 650 25 1,67 125 1,56 25 1,87 0,14 V µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material λ = 3,4 W /mK 2,87 K/W Rectifier \ Shunt Protection Diode Static Forward voltage Reverse leakage c urrent 30 VF 1600 Ir 25 1,16 125 1,11 25 1,3 20 150 1500 V µA Thermal Thermal resistance junc tion to sink Copyright Vincotech R th(j-s) phase-c hange material ʎ =3,4W/mK 1,19 5 K/W 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Characteristic Values Parameter Conditions Symbol VCE [V] VGE [V] VGS [V] VGS [V] Vr [V] Value IC [A] ID [A] IF [A] Tj [°C] Min Typ Unit Max DC Link Capacitor Capacitance 100 C Tolerance -10 nF +10 % PFC Shunt R1 value R Temperature coeficient tc Internal heat resistance Inductanc e 10 20 - 60 mΩ 50 ppm/K R thi 13 K/W L 3 nH Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P 100 R100 = 1486 Ω Power dissipation constant 22 -12 kΩ +14 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 6 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 100 I C (A) I C (A) 100 80 80 60 60 40 40 20 20 0 0 0 1 2 tp = 250 µs V GE = 15 V 3 T j: 4 V C E (V) 0 5 1 2 4 5 V C E (V) 25 °C tp = 250 125 °C Tj = 125 V GE from 7 V to 17 V in steps of 1 V Typical transfer characteristics 3 IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 30 Z t h( jj--s)(K/W) I C (A) 101 25 100 20 10-1 15 0,5 10 0,2 0,1 10-2 0,05 0,02 5 0,01 0,005 0 10-3 10-5 0 0 2 4 6 8 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 10-1 100 101 t p (s) 102 tp / T 1,67 K/W IGBT thermal model values Copyright Vincotech 7 R (K/W) 1,80E-01 τ (s) 1,06E+00 3,72E-01 1,72E-01 6,39E-01 5,52E-02 3,20E-01 1,27E-02 1,54E-01 3,03E-03 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) I C (A) 100 V G E (V) 15 130V 12,5 520V 10 10 7,5 1 5 0,1 2,5 0 0,01 0 10 20 30 40 50 60 70 80 1 10 Q G (nC) 1000 V C E (V) At I C= 100 At 30 Copyright Vincotech A 8 D = single pulse Ts = 80 ºC V GE = Tj = ±15 T jmax V ºC 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Diode Characteristics FWD Typical forward characteristics I F = f(V F) Z th(j-s) = f(t p) 90 101 Z t h( jj--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 75 100 60 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 15 10-2 0 0 1 2 3 10-4 4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,46 K/W FWD thermal model values Copyright Vincotech 9 R (K/W) 6,8400E-02 τ (s) 2,7070E+00 1,8520E-01 3,2380E-01 7,7650E-01 6,8840E-02 2,2980E-01 1,9350E-02 1,1460E-01 3,4610E-03 8,1930E-02 7,0190E-04 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Protection \ Current Transformer Protection Diode Characteristics Typical forward characteristics Prot. Diode Transient thermal impedance as a function of pulse width Prot. Diode Z th(j-s) = f(t p) 30 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) 25 100 20 15 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 5 10-2 0 0 0,5 1 1,5 2 2,5 10-4 3 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 2,87 K/W 150 °C Prot. Diode thermal model values R (K/W) 6,5290E-02 Copyright Vincotech 10 τ (s) 3,9390E+00 1,4760E-01 4,4830E-01 1,3130E+00 5,9640E-02 7,3180E-01 1,3610E-02 4,0440E-01 2,7940E-03 2,1060E-01 5,3720E-04 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Rectifier \ Shunt Protection Diode Characteristics Typical forward characteristics Diode I F = f(V F ) Z th(j-s) = f(t p) 90 101 Z t h(j h(j--s) (K/W) IF (A) Diode Transient thermal impedance as a function of pulse width 75 100 60 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 15 10-2 0 0 0,5 1 1,5 10-4 2 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,19 K/W Diode thermal model values R (K/W) 3,27E-02 τ (s) 9,47E+00 1,25E-01 7,59E-01 7,11E-01 1,23E-01 2,20E-01 3,75E-02 6,56E-02 5,63E-03 3,68E-02 8,27E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 11 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) 1,6 E (mWs) E (mWs) 1,6 Eon 1,2 Eon 1,2 E on Eon 0,8 0,8 Eoff 0,4 Eo ff 0,4 E off Eoff 0 0 0 10 20 30 40 50 60 0 I C (A) 25 With an induc tive load at 400 V V CE = 15/0 V V GE = R gon = 16 Ω R goff = 16 Ω T j: °C 10 20 30 125 °C 30 IC = Figure 3. FWD 40 50 25 With an inductive load at 400 V V CE = 15/0 V V GE = T j: 60 R g ( Ω) 70 °C 125 °C A Figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 0,16 E (mWs) E (mWs) 0,16 Erec 0,12 0,12 0,08 0,08 Erec Erec 0,04 0,04 Erec 0 0 0 10 20 With an induc tive load at 400 V V CE = 15/0 V V GE = R gon = 16 Copyright Vincotech 30 40 25 T j: 50 I C (A) 0 60 °C 10 20 With an inductive load at 400 V V CE = 15/0 V V GE = 125 °C Ω IC= 12 30 30 40 50 25 T j: 60 r g (Ω) 70 °C 125 °C A 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 td(off ) t ( μs) t ( μ s) 1 td(off ) 0,1 0,1 td(on) td(on) tr tr tf 0,01 0,01 tf 0,001 0,001 0 10 20 30 40 50 60 0 10 20 30 40 50 60 I C (A) (A) With an induc tive load at 125 °C Tj= 400 V V CE = r g (Ω) 70 With an inductive load at 125 °C Tj= 400 V V CE = V GE = 15/0 V V GE = R gon = 16 Ω IC = R goff = 16 Ω Figure 7. FWD 15/0 V 30 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,06 t rr (μs) t rr (μs) 0,08 trr 0,05 trr 0,06 0,04 0,03 0,04 trr 0,02 0,02 trr 0,01 0 0 0 10 20 30 40 50 60 0 I C (A) At 400 V V GE = 15/0 V R gon = 16 Ω V CE= Copyright Vincotech 25 T j: 10 20 30 40 50 60 70 R g on (Ω) °C At 125 °C V CE = V GE = IC= 13 400 V 15/0 V 30 A 25 T j: °C 125 °C 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 1,2 1 Q r (μ C) Q r (µC) Typical recovered charge as a f unction of collector current Qr 0,8 0,9 Qr 0,6 0,6 0,4 Qr 0,3 Qr 0,2 0 At 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 I C (A) At V CE = 400 V V GE = 15/0 V R gon = 16 Ω 25 T j: °C At 400 VCE= 125 °C V GE = 15/0 V 30 A I C= Figure 11. FWD V 25 T j: 125 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 40 70 R g o n (Ω) °C I R M (A) I R M (A) 60 I RM 50 30 40 30 20 I RM 20 IRM 10 10 0 0 0 At I RM 10 20 400 V V GE = 15/0 V R gon = 16 Ω V CE = Copyright Vincotech 30 40 25 T j: 50 I C (A) 0 60 10 20 30 40 50 60 70 R go n (Ω) °C At 125 °C V CE = V GE = IC= 14 400 V 15/0 V 30 A 25 T j: °C 125 °C 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 10000 7000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current di F / dt di r r /dt 6000 diF / dt di r r/ dt 8000 5000 6000 4000 3000 4000 2000 2000 1000 0 0 0 10 20 30 40 50 0 60 10 20 30 40 50 At V CE = 400 V V GE = 15/0 V R gon = 16 Ω 25 T j: °C At 125 °C V CE = V GE = I C= Figure 15. 60 70 R g on (Ω) I C (A) 400 V 15/0 V 30 A 25 T j: °C 125 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 70 I C MAX I c CHIP 60 50 M ODULE 40 Ic 30 V CE MAX 20 10 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 16 Ω R goff = 16 Ω Tj = Copyright Vincotech 15 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Definitions General conditions = 125 °C = 16 Ω Tj R gon R goff Figure 1. = IGBT 16 Ω Figure 2. Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 200 125 tdoff % % IC 100 150 VCE 90% VGE 90% 75 VCE 100 IC VGE 50 VGE tdon tEoff 50 25 IC 1% VGE 10% VCE 0 -25 -0,07 -0,01 0,05 0,11 0,17 0,23 -50 2,95 0,29 t (µs) VCE 3% IC 10% tEon 0 3 3,05 3,1 V GE (0%) = 0 V V GE (0%) = 0 V V GE (100%) = 15 V V GE (100%) = 15 V V C (100%) = 400 V V C (100%) = 400 V I C (100%) = 30 A I C (100%) = 30 A t doff = t Eoff = 0,159 0,197 µs µs t don = t Eon = 0,023 0,148 µs µs Figure 3. IGBT t (µs) Figure 4. Turn-of f Swit ching Wavef orms & def init ion of t f 3,2 IGBT Turn-on Swit ching Wavef orms & def init ion of tr 125 200 fitted % 100 3,15 % VCE IC IC 150 IC 90% 75 VCE 100 IC 60% IC 90% 50 tr IC 40% 50 25 IC10% 0 -25 0,07 IC 10% 0 tf 0,09 0,11 0,13 0,15 -50 0,17 3 t (µs) 3,009 3,018 3,027 3,045 3,054 t (µs) V C (100%) = 400 V V C (100%) = 400 I C (100%) = 30 A I C (100%) = 30 A tf= 0,007 µs tr = 0,011 µs Copyright Vincotech 3,036 16 V 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Definitions Figure 5. IGBT Figure 6. Turn-of f Swit ching Wavef orms & def init ion of t Eof f IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 200 % IC 1% Eoff 100 % Poff Pon 150 75 Eon 100 50 50 25 VCE 3% VGE 10% VGE 90% 0 0 tEon tEoff -25 -0,07 -0,01 0,05 0,11 -50 2,97 0,17 3,01 3,05 3,09 P off (100%) = 12,02 kW P on (100%) = 12,02 kW E off (100%) = 0,23 mJ E on (100%) = 0,72 mJ t Eoff = 0,20 µs t Eon = 0,15 µs Figure 7. 3,13 3,17 t ( µs) t ( µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 fitted 0 IRRM 10% Vd -50 IRRM 90% IRRM 100% -100 -150 3 3,02 3,04 3,06 3,08 t (µs) V d (100%) = 400 V I d (100%) = 30 A I RRM (100%) = -28 A t rr = 0,045 µs Copyright Vincotech 17 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet PFC Switching Definitions Figure 8. FWD Figure 9. Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Qrr Id 100 tErec 75 tQrr 50 Erec 100 50 0 25 Prec -50 0 -100 3 3,03 3,06 3,09 -25 3,12 3 t (µs) 3,03 3,06 3,12 t (µs) I d (100%) = 30 A P rec (100%) = 12,02 kW Q rr (100%) = 0,79 µC E rec (100%) = 0,10 mJ t Qrr = 0,09 µs t Erec = 0,09 µs Copyright Vincotech 3,09 18 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Ordering Code & Marking Ordering Code 10-FZ062TA030SM-P986D13 Version without thermal paste with Solder pins 12mm housing NN-NNNNNNNNNNNNNN TTTTTTVV WWYY UL VIN LLLLL SSSS Text Datamatrix Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-TTTTTTVV WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 33,5 0 Therm1 2 33,5 2,8 Therm2 3 29,5 2,8 S1sh1 4 29,5 0 S2sh1 5 26,7 0 DC- 6 23,9 0 DC- Not assembled 7 8 9 14,85 14,05 0 S25 13,35 ST1 10 12,05 11 12 9,5 13 6,7 12,05 PFC2- 14 15 3,9 2,2 0 13,35 S27 ST2 16 1,1 0 G27 17 0 22,7 PFC2 18 7,1 22,7 PFC+ 19 7,1 20,2 PFC+ 20 14,2 22,7 PFC1 21 20,7 22,7 G34 22 23,5 22,7 DC+ 23 26 22,7 DC+ 24 28,8 22,7 G32 25 33,5 18,55 ACIn1 26 33,5 16,05 ACIn1 27 28 33,5 31 8,7 8,7 ACIn2 ACIn2 0 G25 12,05 PFC1Not assembled Copyright Vincotech 19 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Pinout Identification ID Component Voltage Current Function T25, T27 IGBT 650 V 30 A PFC Switch D25, D27 FWD 600 V 30 A PFC Diode D45, D47 FWD 650 V 10 A PFC Sw. Protection Diode D31, D32, D33, D34 Rectifier 1600 V 50 A Rectifier Diode D48 FWD 1600 V 50 A Shunt Protection Diode D26, D28 FWD 650 V 10 A Current Transformer Protection Diode SH1 Shunt C25, C27 Capacitor Rt NTC Copyright Vincotech Comment Shunt Resistor 1000 V DC Link Capacitance Thermistor 20 08 Mar. 2016 / Revision 1 10-FZ062TA030SM-P986D13 datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. General datasheet General datasheet for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotec h.com website. Document No.: Date: 10-FZ062TA030SM-P986D13-D1-14 08 Mar. 2016 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 21 08 Mar. 2016 / Revision 1