10-FY074PA100SM-L583F08 datasheet fast PACK 1 H C 650 V / 100 A Features ● ● ● ● ● ● flow 1 12mm housing High-efficient H-Bridge Open emitter topology Fast IGBT H5 + Fast Rapid 1 Diode Integrated capacitors Integrated thermistor Low inductive 12mm housing Schematic Target applications ● SMPS ● Solar ● Welding Types ● 10-FY074PA100SM-L583F08 Maximum Ratings Tj=25°C, unless otherwise specified Parameter Condition Symbol Value Unit 650 V 79 A 300 A 133 W Inverter Switch Collector-emitter voltage Collector current V CES IC T j = T jmax T s =80 °C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T s =80 °C 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Parameter Conditions Symbol Value Unit 650 V 59 A 120 A 83 W 175 °C Inverter Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j = T jmax T s = 80°C T j = T jmax T s = 80°C Conditions Value Unit V MAX 630 V T op -55…+125 °C Value Unit Symbol DC Link Capacitance Maximum DC voltage Operation Temperature Parameter Conditions Symbol Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 8,1 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Characteristic Values Inverter Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 1,63 2,22 Static Gate-emitter threshold voltage Collec tor-emitter saturation voltage V GE(th) V GE=V CE 0,001 15 V CEsat 100 Collec tor-emitter c ut-off current I CES 0 650 Gate-emitter leakage c urrent I GES 20 0 Internal gate resistance 25 125 25 125 1 1,78 25 80 125 25 240 125 rg none Input capacitance C ies 6000 Output capacitance C oes Reverse transfer capac itance C res Gate c harge f=1 MHz 0 25 25 100 V V µA nA Ω pF 22 15 Qg 520 100 25 240 nC 0,72 K/W Thermal Thermal resistance junc tion to sink R th(j-s) phase-c hange material ʎ =3,4W/mK IGBT Switching Turn-on delay time t d(on) R goff = 4 Ω Rise time Turn-off delay time tr R gon = 4 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 2,6 µC Q rFWD = 4,7 µC Q rFWD = 5,4 µC 3 350 100 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 41 41 41 13 15 16 102 113 117 5 8 11 0,886 1,186 1,286 0,387 0,642 0,706 ns mWs 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 1,52 1,77 125 1,45 150 1,43 Static Forward voltage Reverse leakage current 60 VF 25 650 Ir V 3,2 150 µA Thermal Thermal resistance junction to sink R th(j-s) phase-change material ʎ =3,4W/mK 1,15 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current Copyright Vincotech di /dt = 3535 A/µs di /dt = 4800 A/µs ±15 di /dt = 5060 A/µs E rec (di rf/dt )max 4 350 100 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 65 87 91 78 105 117 2,565 4,690 5,388 0,511 0,980 1,135 884 994 989 A ns µC mWs A/µs 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet DC Link Capacitance Parameter Symbol Conditions Value T j [°C] Capacitance Min Typ Unit Max 200 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] Value R100=1486 Ω 100 Power dissipation constant Typ Unit Max 21,5 -4,5 kΩ +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 5 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 300 I C (A) I C (A) 300 250 250 200 200 150 150 100 100 50 50 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V C E (V) V C E (V) tp = 250 µs V GE = 15 V T j: 25 °C tp = 250 125 °C Tj = 125 150 °C V GE from 5 V to 19 V in steps of 1 V Typical transfer characteristics IGBT µs °C Transient Thermal Impedance as function of Pulse duration I C = f(V GE) IGBT Z th(j-s) = f(t p) 100 Z t h( jj--s)(K/W) I C (A) 101 75 100 50 10-1 0,5 0,2 0,1 10-2 25 0,05 0,02 0,01 0,005 0 10-3 10-5 0 0 1 2 3 4 5 6 7 10-4 10-3 10-2 V G E (V) tp = 100 µs V CE = 10 V T j: 25 °C D = 125 °C R th(j-s) = 150 °C 10 101 t p (s) 102 tp / T 0,72 K/W IGBT thermal model values R th (K/W) Copyright Vincotech 10-1 6 7,52E-02 τ (s) 1,73E+00 1,31E-01 2,44E-01 3,01E-01 6,32E-02 1,21E-01 1,39E-02 4,30E-02 3,50E-03 4,35E-02 3,33E-04 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switch Characteristics Gate voltage vs Gate charge IGBT Safe operating area V GE = f(Q G) IGBT I C = f(V CE) 1000 I C (A) V G E (V) 15 130V 520 V 12,5 100 10 10 7,5 1 5 0,1 2,5 0 0,01 0 50 100 150 200 250 1 300 10 Q G (nC) 1000 V C E (V) At I C= 100 At 100 Copyright Vincotech A 7 D = single pulse Th = 80 ºC V GE = Tj = ±15 T jmax V ºC 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Diode Characteristics FWD Typical forward characteristics FWD Transient thermal impedance as a function of pulse width I F = f(V F) Z th(j-s) = f(t p) 180 Z t h(j h(j--s) (K/W) IF (A) 101 150 100 120 90 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 60 30 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,15 K/W 150 °C FWD thermal model values R (K/W) 7,9580E-02 τ (s) 2,7140E+00 1,5790E-01 4,4770E-01 4,6040E-01 9,1060E-02 2,2560E-01 2,4420E-02 1,5160E-01 5,4170E-03 6,9580E-02 7,3100E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 8 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Characteristics Figure 1. IGBT Figure 2. IGBT Typical swit ching energy losses as a f unction of collector current Typical swit ching energy losses as a f unct ion of gate resistor E = f(I C) E = f(rg) E ( mWs) E (mWs) 2,5 Eon 2 3 2,5 Eon E on 1,5 Eon Eon 2 Eon Eoff Eoff 1,5 1 1 E o ff Eoff Eoff 0,5 Eoff 0,5 0 0 0 25 50 75 100 125 150 175 200 0 I C (A) 25 °C With an induc tive load at 350 V V CE = +15/-5 V V GE = R gon = 4 Ω R goff = 4 Ω 125 °C T j: 2 4 6 8 10 150 °C 100 IC = Figure 3. FWD T j: 14 16 R g ( Ω) 125 °C 150 °C Figure 4. FWD Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) E (mWs) 1,6 Erec Erec 1,2 Erec 0,9 1,2 18 A Typical reverse recovered energy loss as a f unction of collector current E (mWs) 12 25 °C With an inductive load at 350 V V CE = +15/-5 V V GE = Erec Erec 0,8 0,6 Erec 0,3 0,4 -8,88E-16 0 0 25 50 75 With an induc tive load at 350 V V CE = +15/-5 V V GE = R gon = 4 Copyright Vincotech 100 125 150 175 I C (A) 0 200 25 °C T j: 2 4 6 With an inductive load at 350 V V CE = +15/-5 V V GE = 125 °C 150 °C Ω IC= 9 100 8 10 12 14 16 r g (Ω) 18 25 °C T j: 125 °C 150 °C A 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr tr tf tf 0,01 0,01 0,001 0,001 0 25 50 75 100 125 150 175 200 0 I C (A) (A) With an induc tive load at 150 °C Tj= 350 V V CE = 2 4 6 8 10 12 14 16 18 With an inductive load at 150 °C Tj= 350 V V CE = V GE = +15/-5 V V GE = R gon = 4 Ω IC = R goff = 4 Ω Figure 7. FWD +15/-5 V 100 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t rr = f(I C) t rr = f(R gon) 0,16 t rr (μs) t r r (μs) 0,16 trr trr 0,12 trr trr 0,12 trr trr 0,08 0,08 0,04 0,04 0 0 0 25 50 75 100 125 150 175 200 0 I C (A) At r g (Ω) 350 V V GE = +15/-5 V R gon = 4 Ω V CE= Copyright Vincotech 4 6 8 10 12 14 16 18 R g on (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 10 350 V +15/-5 V 100 A 25 °C T j: 125 °C 150 °C 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) Q r (µC) Q r (μ C) 8 Qr 6 Qr 5 Qr 6 Qr 4 4 3 Qr Qr 2 2 1 0 At 0 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 I C (A) 350 V V GE = +15/-5 V R gon = 4 Ω V CE = At 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 350 V +15/-5 V 100 A 18 R g o n (Ω) 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 120 120 I R M (A) I R M (A) IRM I RM 90 90 I RM 60 60 30 30 I RM IRM I RM 0 0 0 At 25 50 75 350 V V GE = +15/-5 V R gon = 4 Ω V CE = Copyright Vincotech 100 125 150 175 I C (A) 0 200 4 6 8 10 12 14 16 18 R g o n (Ω) 25 °C T j: 2 At V CE = 125 °C V GE = 150 °C IC= 11 350 V +15/-5 V 100 A 25 °C T j: 125 °C 150 °C 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 12000 8000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt di F / dt di r r/ dt 10000 6000 8000 6000 4000 4000 2000 2000 0 0 0 25 50 75 100 125 150 175 0 200 2 4 6 8 10 12 T j: 125 °C I C (A) 350 V V GE = +15/-5 V R gon = 4 Ω At V CE = 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 350 V +15/-5 V 100 A 14 16 18 R g o n (Ω) 25 °C 150 °C IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 250 I C MAX I c CHIP 200 Ic MODULE 150 100 V CE MAX 50 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 4 Ω R goff = 4 Ω Tj = Copyright Vincotech 12 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Definitions General conditions = 150 °C = 4Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 4Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 150 200 IC % % tdoff IC 150 100 VGE 90% VCE 90% VCE 100 VGE VGE 50 tdon 50 tEoff VCE IC 1% 0 VGE 10% -50 -0,07 -0,02 0,03 0,08 0,13 0,18 0,23 tEon -50 2,92 0,28 VCE 3% IC 10% 0 2,96 3 3,04 3,08 3,12 3,16 t (µs) -5 V V GE (100%) = 15 V V C (100%) = 300 V I C (100%) = 101 A t doff = t Eoff = 0,117 0,166 µs µs V GE (0%) = Figure 3. 3,2 t (µs) -5 V V GE (100%) = 15 V V C (100%) = 300 V I C (100%) = 101 A t don = t Eon = 0,041 0,137 µs µs V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of t f Figure 4. IGBT Turn-on Swit ching Wavef orms & def init ion of tr 200 150 % % 125 fitted IC 150 100 IC 90% VCE 100 75 IC 90% IC 60% tr 50 IC 40% 50 25 IC 10% IC IC10% VCE 0 0 tf -25 0,08 0,095 0,11 0,125 0,14 0,155 -50 0,17 3 t ( µs) 3,03 3,06 3,09 V V C (100%) = 300 I C (100%) = 101 A I C (100%) = 101 A tf= 0,010 µs tr = 0,016 µs Copyright Vincotech 3,12 3,15 3,18 t (µs) 300 V C (100%) = 13 V 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 125 % Poff Pon % IC 1% 100 100 75 75 50 50 25 Eon 25 VGE 90% VCE 3% VGE 10% Eoff 0 0 tEon tEoff -25 -0,01 0,02 0,05 0,08 0,11 0,14 0,17 -25 2,95 0,2 2,975 3 3,025 3,05 P off (100%) = 30,29 kW P on (100%) = 30,29 kW E off (100%) = 0,71 mJ E on (100%) = 1,29 mJ t Eoff = 0,17 µs t Eon = 0,14 µs Figure 7. 3,075 3,1 3,125 3,15 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 Vd fitted 0 IRRM 10% -50 IRRM 90% IRRM 100% -100 -150 3,01 3,04 3,07 3,1 3,13 3,16 3,19 t (µs) V d (100%) = 300 V I d (100%) = 101 A I RRM (100%) = -91 A t rr = 0,117 µs Copyright Vincotech 14 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Inverter Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 125 150 % % Id Erec Qrr 100 100 75 tQrr 50 tErec 50 0 25 Prec -50 0 -100 3 3,05 3,1 3,15 3,2 3,25 3,3 -25 3,35 3 t (µs) 3,05 3,1 3,15 3,2 3,3 3,35 t (µs) I d (100%) = 101 A P rec (100%) = 30,29 kW Q rr (100%) = 5,39 µC E rec (100%) = 1,14 mJ t Qrr = 0,23 µs t Erec = 0,23 µs Copyright Vincotech 3,25 15 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Ordering Code & Marking Version without thermal paste 12mm housing Ordering Code 10-FY074PA100SM-L583F08 NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L583F08 in packaging barcode as L583F08 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 46,3 46,3 43,6 43,6 39,2 36,2 33,2 28,8 23,8 19,4 16,4 13,4 9 9 6,3 6,3 0 0 0 0 0 2,7 5,4 8,1 10,8 15,25 18,25 21,25 31,35 2,7 0 2,7 0 1 0 1 0 0 1 0 1 2,7 0 2,7 0 6,8 9,5 12,2 14,9 28,6 28,6 28,6 28,6 28,6 28,6 28,6 28,6 28,6 DC-2 DC-2 DC-2 DC-2 G13-a S13 G13-b Therm2 Therm1 G11-b S11 G11-a DC-1 DC-1 DC-1 DC-1 DC+ DC+ DC+ DC+ Ph1 Ph1 Ph1 Ph1 Ph1 G12-a S12 G12-b G14-b 30 31 32 33 34 35 36 37 38 39 40 34,35 37,35 41,8 44,5 47,2 49,9 52,6 52,6 52,6 52,6 52,6 28,6 28,6 28,6 28,6 28,6 28,6 28,6 14,9 12,2 9,5 6,8 S14 G14-a Ph2 Ph2 Ph2 Ph2 Ph2 DC+ DC+ DC+ DC+ Copyright Vincotech 16 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Pinout Identification ID Component Voltage Current Function IGBT 650V 100A Iverter Switch FWD 650V 60A Inverter Diode C10, C20 Capacitor 630V - DC Link Capacitance NTC NTC - - Thermistor T11-a,T11-b,T12-a, T12-b,T13-a,T13-b, T14-a,T14-b D11-a,D11-b,D12-a, D12-b,D13-a,D13-b, D14-a,D14-b Copyright Vincotech 17 Comment 29 Okt. 2015 / Revision 1 10-FY074PA100SM-L583F08 datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: 10-FY074PA100SM-L583F08 -D1-14 29 Oct. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 18 29 Okt. 2015 / Revision 1