V23990-P629-L81-PM datasheet flow BOOST 0 SiC 1200 V / 80 mΩ Features ● ● ● ● ● flow 0 12mm housing High efficiency dual boost Ultra fast switching frequency Low Inductive Layout 1200V SiC MOSFET (Rohm) and 1200V SiC diode (Rohm) Integrated bypass diode Schematic Target applications ● Solar Inverter ● UPS Types ● V23990-P629-L81-PM Maximum Ratings Tj=25°C, unless otherwise specified Parameter Symbol Condition Value Unit 1200 V 20 A 140 A 68 W Boost Switch Drain-source voltage V DSS Drain current ID T j = T jmax Peak drain current I DM t p limited by T jmax Total power dissipation P tot T j = T jmax Gate-source voltage V GSS -6/+22 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T s= 80 °C T s = 80 °C 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Parameter Symbol Condition Value Unit 1200 V 19 A 50 A 56 W Boost Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF T j = T jmax T s = 80°C Repetitive peak forward current I FRM Total power dissipation P tot Maximum Junction Temperature T jmax 175 °C V RRM 1600 V 33 A 200 A 200 A s 43 W T j = T jmax T s = 80°C Bypass Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current IF I FSM 2 T j = T jmax T s = 80°C 60 Hz Single Half Sine Wave t p = 8,3 ms T j = 150°C 2 Surge current capability I t Total power dissipation P tot Maximum Junction Temperature T jmax 150 °C Storage temperature T stg -40…+125 °C Operation temperature under switching condition T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 9,55 mm T j = T jmax T s = 80°C Module Properties Thermal Properties Isolation Properties Isolation voltage DC voltage V isol Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Characteristic Values Parameter Symbol Conditions VGE [V] VCE [V] Value IC [A] Tj[°C] Min Unit Typ Max 79 111 Boost Switch Static 25 Drain-sourc e on-state resistanc e Gate-source threshold voltage 18 r DS(on) V GS(th) 10 V GS = V DS 0,0044 Gate to Sourc e Leakage Current I GSS -6/+22 0 Zero Gate Voltage Drain Current I DSS 0 1200 125 108 150 121 25 1,7* 3 25 ±100 125 25 10 125 rg 9 Gate c harge Qg 110 Gate to source charge Q GS Gate to drain charge Q GD 38 Short-circ uit input capacitance C iss 2070 Short-circ uit output capacitance C oss Reverse transfer capac itance C rss f=1MHz 0 400 4** 125 Internal gate resistance 18 mΩ 10 800 25 25 24 80 V nA µA Ω nC pF 20 * VG S =-6V for 100msec is applied. Measuring time: 2.5msec . ** VG S =+22V for 100msec is applied. Measuring time: 2.5msec. Thermal Thermal resistance junction to sink R th(j-s) phase-change material λ=3,4 W/mK 1,41 K/W MOSFET Switching Turn-on delay time Rise time Turn-off delay time t d(on) tr R goff = 4 Ω R gon = 4 Ω t d(off) +16/0 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 0,1 µC Q rFWD = 0,1 µC 3 700 16 25 125 25 125 25 125 25 125 25 125 25 125 15 14 8 7 113 129 5 5 0,399 0,303 0,174 0,186 ns mWs 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Diode Parameter Symbol Conditions VGE [V] VCE [V] Value IC [A] Tj[°C] Min Unit Typ Max 25 1,40 1,6 125 1,70 150 1,83 Static Forward voltage Reverse leakage c urrent 10 VF 25 1200 Ir V 200 150 µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ =3,4W /mK 1,7 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Reverse recovered energy Peak rate of fall of recovery current Qr di /dt = 1914 A/µs +16/0 di /dt = 2353 A/µs 700 16 E rec (di rf/dt )max 25 125 25 125 25 125 25 125 25 125 9 10 9 9 0,083 0,102 0,018 0,029 3218 3711 A ns µC mWs A/µs Bypass Diode Static Forward voltage Reverse leakage c urrent 25 VF 1600 Ir 25 1,22 125 1,21 25 1,9 50 150 1100 V µA Thermal Thermal resistance junc tion to sink R th(j-s) phase-change material ʎ = 3,4 W /mK 1,61 K/W 21,5 kΩ Thermistor Rated resistance 25 R Deviation of R100 ΔR/R Power dissipation P R100=1486 Ω 100 Power dissipation constant -4,5 +4,5 % 25 210 mW 25 3,5 mW/K B-value B(25/50) 25 3884 K B-value B(25/100) 25 3964 K Vincotech NTC Reference Copyright Vincotech F 4 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switch Characteristics MOSFET Typical output characteristics MOSFET Typical output characteristics I D = f(V DS) I D= f(V DS) 80 ID (A) I D (A) 80 70 60 60 40 50 40 20 30 0 20 -20 10 0 -40 0 2 4 6 tp = 250 µs V GS= 18 V 8 10 12 T j: 14 16 18 VDS (V) 20 -10 -5 0 5 15 20 VDS (V) 25 °C tp = 250 125 °C Tj = 150 150 °C V GS from 0 V to 20 V in steps of 2 V MOSFET Typical transfer characteristics 10 µs °C Transient thermal impedance as a function of pulse width I D = f(V GS) MOSFET Z th(j-s)= f(t p) 35 I D (A) 101 30 25 100 20 15 0,5 10-1 0,2 10 0,1 0,05 0,02 5 0,01 0,005 0 10-2 0 0 2 4 6 8 10 12 14 10-4 16 10-3 10-2 10-1 100 101 102 VGS (V) tp = 100 µs V DS = 10 V T j: 25 °C D= tp / T 125 °C R th(j-s) = 1,48 K/W 150 °C Copyright Vincotech 5 R (K/W) Tau(s) 1,30E-01 1,00E+00 4,11E-01 1,66E-01 7,09E-01 6,11E-02 1,27E-01 5,50E-03 1,00E-01 8,02E-04 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Diode Characteristics FWD Typical forward characteristics I F = f(V F) Z th(j-s) = f(t p) 30 101 Z t h(j h(j--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 25 100 20 15 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 10 5 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,7 K/W 150 °C FWD thermal model values Copyright Vincotech 6 R (K/W) 4,5560E-02 τ (s) 3,2070E+00 1,6530E-01 3,8810E-01 7,8640E-01 6,5190E-02 3,2730E-01 1,1130E-02 2,5420E-01 2,7080E-03 1,2040E-01 6,1510E-04 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Bypass Diode Characteristics Bypass diode Typical forward characteristics Transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) 75 101 Z t h(j h(j--s) (K/W) IF (A) I F = f(V F) Bypass diode 60 100 45 30 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 15 10-2 0 0 1 2 3 4 10-4 5 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 102 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,61 K/W 150 °C Diode thermal model values R (K/W) 6,7170E-02 τ (s) 2,7200E+00 1,4760E-01 4,1400E-01 8,6760E-01 8,3320E-02 2,5310E-01 2,8890E-02 1,6900E-01 5,1460E-03 1,0640E-01 9,0980E-04 Thermistor Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Characteristics Figure 1. MOSFET Figure 2. MOSFET E = f(I D) E = f(rg) 1,2 1,2 E ( mWs) Typical swit ching energy losses as a f unct ion of gate resistor E (mWs) Typical swit ching energy losses as a f unction of collector current Eo n 0,9 Eo n 0,9 Eon Eon 0,6 0,6 Eoff Eoff 0,3 0,3 E off Eo ff 0 0 0 5 10 15 20 25 30 0 I C (A) 25 °C With an induc tive load at 700 V V DS = +16/0 V V GS = R gon = 4 Ω R goff = 4 Ω T j: 2 4 6 8 150 °C ID = Figure 3. FWD 16 T j: 14 16 R g ( Ω) 18 125 °C 150 °C A Figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I D) E rec = f(r g ) 0,05 0,03 E ( mWs) E (mWs) 12 25 °C With an inductive load at 700 V V DS = +16/0 V V GS = 125 °C 10 0,025 0,04 Erec 0,02 0,03 Erec 0,015 0,02 0,01 Erec 0,01 0,005 Erec 0 -1,73E-17 0 5 10 With an induc tive load at 700 V V DS = +16/0 V V GS = R gon = 4 Copyright Vincotech 15 20 25 I D (A) 0 30 25 °C T j: 2 4 6 With an inductive load at 700 V V DS = +16/0 V V GS = 125 °C 150 °C Ω ID = 8 16 8 10 12 14 16 r g (Ω) 18 25 °C T j: 125 °C 150 °C A 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Characteristics Figure 5. MOSFET Figure 6. MOSFET Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I D) t = f(r g) 1 t ( μs) t ( μ s) 1 td(off ) td(off ) 0,1 0,1 td(on) td(on) tr 0,01 0,01 tr tf tf 0,001 0,001 0 5 10 15 20 25 30 0 (A ) I D (A) With an induc tive load at 125 °C Tj= 700 V V DS = V GS = +16/0 V R gon = 4 Ω R goff = 4 Ω 2 4 6 8 10 12 16 r g (Ω) 18 With an inductive load at 125 °C Tj= 700 V V DS = V GS = ID = Figure 7. FWD +16/0 V 16 A Figure 8. FWD Typical reverse recovery t ime as a f unction of collector current Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or t rr = f(I D) t rr = f(R gon) 0,012 t rr (μs) t rr (μs) 0,012 0,009 trr trr 0,009 trr trr 0,006 0,006 0,003 0,003 0 0 0 5 10 15 20 25 30 0 I D (A) At 14 V DS= V GS = R gon = 700 V +16/0 V 4 Ω Copyright Vincotech 4 6 8 10 12 14 16 18 R g on (Ω) 25 °C T j: 2 At 125 °C 150 °C 9 V DS = V GS = ID = 700 V +16/0 V 16 A 25 °C T j: 125 °C 150 °C 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of MOSFET t urn on gate resistor Qr = f(I D) Q r = f(R gon) 0,12 Q r (µC) Q r (μ C) 0,15 0,09 Qr 0,12 Qr 0,09 0,06 Qr 0,06 Qr 0,03 0,03 0 At 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 = A V DS V GS = R gon = 700 V +16/0 V 4 Ω 25 °C T j: At V DS = 700 V GS = ID= 125 °C 150 °C Figure 11. 18 R g o n (Ω) I D (A) FWD V +16/0 V 16 A 25 °C T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of MOSFET t urn on gate resistor I RM = f(I D) I RM = f(R gon) 12 I R M (A) I R M (A) 16 I RM 9 12 I RM 6 8 3 4 IRM 0 0 0 At IRM 5 10 V DS = V GS = 700 V +16/0 V R gon = 4 Ω Copyright Vincotech 15 20 25 I D (A) 0 30 4 6 8 10 12 14 16 18 R g o n (Ω) 25 °C T j: 2 At 125 °C 150 °C 10 V DS = V GS = ID = 700 V +16/0 V 16 A 25 °C T j: 125 °C 150 °C 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unction of MOSFET t urn on gat e resist or di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 5000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current diF / dt dir r/dt 4000 6000 di F / dt di r r/ dt 5000 4000 3000 3000 2000 2000 1000 1000 0 0 0 5 10 15 20 25 0 30 2 4 6 8 10 12 I C (A) At 700 V V GS = +16/0 V R gon = 4 Ω V DS = Copyright Vincotech 25 °C T j: At V DS = 125 °C V GS = 150 °C I D= 11 700 +16/0 V 16 A 14 16 R g on (Ω) 18 25 °C V T j: 125 °C 150 °C 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Definitions General conditions = 125 °C = 4Ω Tj R gon = R goff Figure 1. MOSFET Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 4Ω Figure 2. MOSFET Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 125 175 tdoff % % VDS ID 150 100 VGS 90% VDS 90% 125 VDS 75 100 ID VGS 50 VGS 75 tdon tEoff 50 25 ID 1% 25 VGS 10% 0 -25 -0,1 -0,05 0 0,05 0,1 0,15 V GS (0%) = V GS (100%) = 0 V 16 V DS (100%) = 700 I D (100%) = 16 3 3,02 3,04 0 V V V GS (0%) = V GS (100%) = 16 V V V DS (100%) = 700 V A I D (100%) = t don = 16 A t doff = 0,129 µs t Eoff = Figure 3. 0,155 µs MOSFET Turn-of f Swit ching Wavef orms & def init ion of t f t E on = Figure 4. 0,014 µs 0,067 µs 3,06 3,08 3,1 t (µs) MOSFET Turn-on Swit ching Wavef orms & def init ion of tr 125 % tEon -25 2,98 0,2 t (µs) VDS 3% ID 10% 0 175 fitted ID ID % VDS 150 100 ID 90% 125 VCE 75 100 ID 60% 50 IC 90% 75 tr ID 40% 50 25 ID 10% 25 0 IC 10% 0 tf -25 0,03 0,05 0,07 0,09 0,11 0,13 -25 3,005 0,15 t ( µs) V C (100%) = 700 I D (100%) = tf = Copyright Vincotech 3,015 3,025 3,035 3,045 3,055 3,065 3,075 t (µs) V V C (100%) = 700 V 16 A A µs I D (100%) = tr = 16 0,005 0,007 µs 12 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Definitions Figure 5. MOSFET Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. MOSFET Turn-on Swit ching Wavef orms & def init ion of tEon 125 150 % ID 1% 100 Pon % Eoff 125 Eon 100 75 75 50 50 Poff 25 25 VGS 90% 0 tEoff -25 -0,05 VDS 3% VGS 10% 0 -0,025 0 0,025 0,05 0,075 0,1 0,125 -25 2,99 0,15 tEon 3,005 3,02 3,035 3,05 P off (100%) = 11,08 kW P on (100%) = 11,08 kW E off (100%) = 0,19 mJ E on (100%) = 0,30 mJ t Eoff = 0,155 µs t E on = 0,067 µs Figure 7. 3,065 3,08 3,095 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 150 % Id 100 trr 50 fitted Vd 0 IRRM 10% IRRM 90% IRRM 100% -50 -100 3,01 3,02 3,03 3,04 3,05 3,06 t (µs) V d (100%) = I d (100%) = 700 V 16 A I RRM (100%) = -10 A t rr = 0,009 µs Copyright Vincotech 13 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Boost Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 150 % % Qrr Id Erec 125 100 100 tErec 50 75 tQrr 50 0 25 Prec -50 0 -100 3,01 3,02 3,03 3,04 3,05 -25 3,02 3,06 t (µs) 3,025 3,03 3,035 3,045 3,05 t (µs) I d (100%) = 16 A P rec (100%) = 11,08 kW Q rr (100%) = 0,10 µC E rec (100%) = 0,03 mJ t Q rr = 0,02 µs t E rec = 0,02 µs Copyright Vincotech 3,04 14 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Ordering Code & Marking Version without thermal paste 12mm housing and solder pins Vinco WWYY NNNNNNNVV UL LLLLL SSSS Text Datamatrix Ordering Code V23990-P629-L81-PM Vinco Date code Name&Ver UL Lot Serial Vinco WWYY NNNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin X Y Function 1 0 22,5 G1 2 2,9 22,5 S1 3 8,3 22,5 DC-Boost1 4 10,8 22,5 DC-Boost1 5 19,6 22,5 DC+Boost 6 22,1 22,5 DC+Boost 7 29,1 22,5 DC+In1 8 32 22,5 DC+In1 9 33,5 17,8 Boost1 10 33,5 15,3 Boost1 11 12 13 33,5 33,5 32 7,2 4,7 0 Boost2 Boost2 14 29,1 0 DC+In2 15 22,1 0 DC+Boost 16 19,6 0 DC+Boost 17 10,8 0 DC-Boost2 18 8,3 0 DC-Boost2 19 2,9 0 S2 20 0 0 G2 21 0 8 22 0 14,5 Therm1 Therm2 Copyright Vincotech DC+In2 15 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Pinout Identification ID Component Voltage Current Function T1,T2 MOSFET 1200V 80mΩ Boost Switch D1,D3 FWD 1200V 10A Boost Diode D5,D6 Rectifier 1600V 25A Bypass Diode Rt NTC - - Thermistor Copyright Vincotech 16 Comment 19 Nov. 2015 / Revision 1 V23990-P629-L81-PM datasheet Packaging instruction Standard packaging quantity (SPQ) 135 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 0 packages see vincotech.com website. Package data Package data for flow 0 packages see vincotech.com website. Document No.: Date: V23990-P629-L81-D1-14 19 Nov. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 19 Nov. 2015 / Revision 1