10-F107ZAA045SM-L514B19 target datasheet flow RPI 1 650 V / 45 A Features flow 1 17mm housing ● High integration level of Rectifier, PFC and Inverter ● High efficiency input rectifier ● Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si diode ● High efficiency H-Bridge inverter with fast IGBT H5 ● Temperature sensor Schematic Target applications ● Welding ● Charger Types ● 10-F107ZAA045SM-L514B19 Maximum Ratings Tj=25°C, unless otherwise specified Parameter Conditions Symbol Value Unit 1600 V 48 A 270 A Rectifier Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current Surge (non-repetitive) forward current V RRM IF I FSM 2 T j = T jmax T h = 80°C 50 Hz Single Half Sine Wave 2 Surge current capability I t t p = 10 ms 50 Hz sine T j = 150°C 370 A s Total power dissipation P tot T j = T jmax T h = 80°C 60 W Maximum Junction Temperature T jmax 150 °C Copyright Vincotech 1 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Parameter Condition Symbol Value Unit 650 V 28 A t p limited by T jmax 90 A Tj ≤ 150°C, VCE ≤ 650 V 90 A 57 W PFC Switch Collector-emitter voltage Collector current Repetitive peak collector current V CES IC I CRM Turn off safe operating area T j = T jmax T S =80 °C T j = T jmax T S =80 °C Total power dissipation P tot Gate-emitter voltage V GES ±20 V Maximum Junction Temperature T jmax 175 °C Value Unit 650 V 29 A 180 A 52 W 175 °C Value Unit 650 V 17 A 20 A 33 W 175 °C Parameter Conditions Symbol PFC Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Conditions Symbol C. T. Protection Diode Peak Repetitive Reverse Voltage DC forward current V RRM IF Repetitive peak forward current I FRM Power dissipation P tot Maximum Junction Temperature T jmax Copyright Vincotech T j=T jmax T j=T jmax 2 T h=80°C T h=80°C 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet TParameter j= Condition Symbol Value Unit 650 V 43 A t p limited by T jmax 150 A Tj ≤ 150°C, VCE ≤ 650 V 150 A 84 W H-Bridge Switch Lo/Hi Side Collector-emitter voltage V CES Collector current IC Repetitive peak collector current I CRM Turn off safe operating area T S=80°C T j=T jmax Total power dissipation P tot Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Value Unit 650 V 35 A 60 A 48 W 175 °C Parameter T S=80°C T j=T jmax Conditions Symbol H-Bridge Diode Lo/Hi Side Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax Parameter T j=T jmax T h =80°C T j=T jmax T h=80°C Conditions Value Unit V MAX 500 V T op -55…+125 °C Symbol DC Capacitor Maximum DC voltage Operation Temperature Copyright Vincotech 3 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Parameter Conditions Symbol Value Unit Module Properties Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 7,74 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 4 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Characteristic Values Rectifier Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 0,99 1,21 125 0,9 Static Forward voltage 13 VF V 150 Reverse leakage current 25 1600 Ir 50 150 1100 µA Thermal Thermal resistanc e junction to sink R th(j-s) phase-c hange material ʎ =3,4W/mK 1,16 K/W Value Unit PFC Switch Parameter Symbol Conditions V GE [V] V CE [V] I C [A] T j[ °C] Min Typ Max 3,3 4 4,7 25 1,69 2,22 125 1,92 Static Gate-emitter threshold voltage V GE(th) Collec tor-emitter saturation voltage V CEsat V GE=V CE 0,0003 15 30 25 125 V V 150 Collec tor-emitter cut-off c urrent Gate-emitter leakage current Internal gate resistance 0 I CES 20 I GES 25 650 40 125 25 0 120 125 rg none Input capacitance C ies 2100 Output capacitance C oes Reverse transfer c apac itanc e C res Gate c harge f=1MHz 0 25 25 45 µA nA Ω pF 7,7 15 Qg 520 30 25 70 nC 1,67 K/W Thermal Thermal resistanc e junction to sink Copyright Vincotech R th(j-s) phase-change material ʎ =3,4W /mK 5 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet PFC Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,46 2,6 125 2,03 Static Forward voltage 30 VF V 150 Reverse leakage current 25 665 Ir 10 150 µA Thermal Thermal resistanc e junction to sink R th(j-s) phase-c hange material ʎ =3,4W/mK 1,83 K/W Value Unit C. T. Protection Diode Parameter Conditions Symbol V r [V] I F [A] T j [°C] Min Typ Max 25 1,67 1,87 125 1,56 Static Forward voltage 10 VF V 150 Reverse leakage current 650 Irm 25 0,14 150 µA Thermal Thermal resistanc e junction to sink Copyright Vincotech Rth(j-s) phase-c hange material ʎ =3,4W/mK 2,87 6 K/W 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet H-Bridge Switch Lo/Hi Side TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 1,82 2,22 Static Gate-emitter threshold voltage V GE(th) V GE=V CE Collec tor-emitter saturation voltage V CEsat 0,0005 25 125 25 15 50 1 125 2,00 V V 150 Collec tor-emitter cut-off c urrent Gate-emitter leakage current Internal gate resistance 0 I CES 20 I GES 25 650 40 125 25 0 120 125 rg none Input capacitance C ies 3000 Output capacitance C oes Reverse transfer c apac itanc e C res Gate c harge f=1 MHz 0 25 25 µA nA Ω 50 pF 11 15 Qg 520 50 25 120 nC 1,13 K/W Value Unit Thermal Thermal resistanc e junction to sink R th(j-s) phase-c hange material ʎ =3,4W/mK H-Bridge Diode Lo/Hi Side Parameter Symbol Conditions V r [V] I F [A] T j [°C] Min Typ Max 25 1,43 1,7 125 1,34 150 1,31 Static Forward voltage Reverse leakage current 30 VF 650 Ir 25 V 40 150 µA Thermal Thermal resistanc e junction to sink Copyright Vincotech R th(j-s) phase-c hange material ʎ =3,4W/mK 2,00 7 K/W 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet DC Capacitor Parameter Symbol Conditions Value T j[°C] Capacitance Min Typ Unit Max 100 C Tolerance -10 nF +10 % Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 22 -12 kΩ +12 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 8 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Ordering Code & Marking Version without thermal paste 17mm housing Ordering Code 10-F107ZAA045SM-L514B19 NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Text Datamatrix in DataMatrix as L514B19 in packaging barcode as L514B19 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin table [mm] Pin X Y Function Pin X Y 1 52,9 0 G13 30 49,8 12,9 Function DC-Inv2 2 49,9 0 S13 31 52,9 12,9 DC-Inv2 DC-Inv1 3 41,9 0 Ph2 32 52,9 15,9 4 39,2 0 Ph2 33 41,8 14,4 DC+Inv 5 36,2 0 S14 34 39,1 14,4 DC+Inv 6 33,2 0 G14 35 29,2 9,2 PFC2- 7 22 0 PFC+ 36 15 9,2 PFC1- 8 22 3,5 PFC+ 37 25 17,4 PFC2in2 9 13,4 0 DC+Rect 38 16,5 17 PFC1in2 10 10,7 0 11 2,7 0 DC+Rect DC-Rect 39 40 25 17 20,9 20,5 PFC2in1 PFC1in1 12 0 0 DC-Rect 13 0 13 ACIn1 14 0 15,7 ACIn1 15 0 23,7 ACIn2 16 0 26,4 ACIn2 17 7,7 28,8 Therm1 18 10,7 28,8 Therm2 19 14,6 28,8 S25 20 17,6 28,8 G25 21 20,6 28,8 G27 22 23,6 28,8 S27 23 33,2 28,8 G12 24 36,2 28,8 S12 25 39,2 28,8 Ph1 26 41,9 28,8 Ph1 27 49,9 28,8 S11 28 52,9 28,8 29 49,8 15,9 G11 DC-Inv1 Copyright Vincotech 9 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Pinout Identification ID Component Voltage Current Function T25,T27 IGBT 650V 30A PFC Switch D25,D27 FWD 650V 30A PFC Diode D26, D28 FWD 650V 10A C.T. Protection Diode T11, T13 / T12, T14 IGBT 650V 50A H-Bridge Switch Lo/Hi Side D12, D14 / D11, D13 FWD 650V 30A H-Bridge Diode Lo/Hi Side D31, D32, D33, D34 Rectifier 1600V 35A Rectifier Diode C1,C2 Capacitor 500V - DC Capacitor Rt NTC - - Thermistor Copyright Vincotech 10 Comment 14 Aug. 2015 / Revision 1 10-F107ZAA045SM-L514B19 target datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Package data Package data for flow 1 packages see vincotech.com website. Document No.: Date: 10-F107ZAA045SM-L514B19-T1-14 14 Aug. 2015 Modification: Pages Product status definition Datasheet Status Product Status Target Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 11 14 Aug. 2015 / Revision 1