10-FY074PA050SM-M582F38 datasheet flow PACK 1 650 V / 50 A Features ● ● ● ● ● flow 1 12mm housing 650V IGBT H5 and 650V Stealth Si diode High-efficiency Ultra-fast switching frequency Integrated temperature sensor Low inductance layout Schematic Target applications ● Solar Inverters ● Power Supply ● Inverter based welding Types ● 10-FY074PA050SM-M582F38 Maximum Ratings Tj=25°C, unless otherwise specified TParameter j= Condition Symbol Value Unit 650 V 43 A 150 A 84 W H-bridge Switch Collector-emitter voltage Collector current V CES IC T j=T jmax T S=80°C Repetitive peak collector current I CRM t p limited by T jmax Total power dissipation P tot T j=T jmax Gate-emitter voltage VGES ±20 V Maximum Junction Temperature T jmax 175 °C Copyright Vincotech 1 T S=80°C 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Parameter Conditions Symbol Value Unit 650 V 29 A 180 A 52 W 175 °C H-bridge Diode Peak Repetitive Reverse Voltage Continuous (direct) forward current V RRM IF Repetitive peak forward current IFRM Total power dissipation P tot Maximum Junction Temperature T jmax T j=T jmax T h =80°C T j=T jmax T h=80°C Module Properties Parameter Conditions Symbol Value Unit Thermal Properties Storage temperature T stg -40…+125 °C Operation Junction Temperature T jop -40…+(T jmax - 25) °C 4000 V min 12,7 mm 8,47 mm Isolation Properties Isolation voltage V isol DC voltage Creepage distance Clearance Comparative Tracking Index Copyright Vincotech t p=2s >200 CTI 2 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Characteristic Values H-bridge Switch TParameter j= Symbol Conditions V GE [V] V CE [V] Value I C [A] T j[ °C] Unit Min Typ Max 3,3 4 4,7 1,82 2,22 Static Gate-emitter threshold voltage V GE(th) V GE=V CE 0,0005 25 125 25 Collec tor-emitter saturation voltage 15 V CEsat 50 Collec tor-emitter c ut-off current I CES 0 650 Gate-emitter leakage c urrent I GES 20 0 1 125 2,00 150 - 25 40 120 125 rg none Input capacitance C ies 3000 Output capacitance C oes Reverse transfer capac itance C res Internal gate resistance Gate c harge f=1 MHz 0 V 125 25 25 25 50 V µA nA Ω pF 11 15 Qg 520 50 25 120 nC 1,13 K/W Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK IGBT Switching Turn-on delay time t d(on) R goff = 8 Ω Rise time Turn-off delay time tr R gon = 8 Ω t d(off) ±15 Fall time tf Turn-on energy (per pulse) E on Turn-off energy (per pulse) E off Copyright Vincotech Q rFWD = 0,8 µC Q rFWD = 1,8 µC Q rFWD = 2,2 µC 3 300 50 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 59 60 60 9 11 11 64 74 76 4 8 9 0,412 0,516 0,555 0,170 0,303 0,337 ns mWs 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Inverter Diode Parameter Symbol Conditions Value V r [V] I F [A] T j [°C] Min Unit Typ Max 25 2,46 2,6 125 2,03 150 - Static Forward voltage Reverse leakage c urrent 30 VF 25 665 Ir V 10 150 - µA Thermal Thermal resistance junc tion to sink R th(j-s) Phase-Change Material ʎ =3,4W/mK 1,83 K/W FWD Switching Peak recovery current I RRM Reverse recovery time t rr Recovered charge Qr Reverse recovered energy Peak rate of fall of recovery current di /dt = 4872 A/µs di /dt = 4560 A/µs ±15 di /dt = 4066 A/µs 300 50 E rec (di rf/dt )max 25 125 150 25 125 150 25 125 150 25 125 150 25 125 150 39 47 49 20 100 117 0,783 1,798 2,183 0,133 0,376 0,466 6525 3267 2773 A ns µC mWs A/µs Thermistor Parameter Conditions Symbol V GE [V] Rated resistance ΔR/R Power dissipation P Value I C [A] T j[ °C] Min 25 R Deviation of R100 V CE [V] R100=1486 Ω 100 Power dissipation constant Typ Unit Max 22 -12 kΩ +12 % 25 200 mW 25 2 mW/K B-value B(25/50) Tol. ±3% 25 3950 K B-value B(25/100) Tol. ±3% 25 3998 K Vincotech NTC Reference Copyright Vincotech B 4 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switch Characteristics Typical output characteristics IGBT Typical output characteristics I C = f(V CE) IGBT I C = f(V CE) 150 I C (A) I C (A) 150 120 120 90 90 60 60 30 30 0 0 0 1 2 3 4 V C E (V) 0 5 1 2 3 250 µs 25 °C tp = 250 V GE= 15 V 125 °C Tj = 125 150 °C V GE from 8 V to 18 V in steps of 1 V Typical transfer characteristics 5 V C E (V) tp = T j: 4 IGBT µs °C Transient Thermal Impedance as function of Pulse duration Z th(j-s) = f(t p) 101 40 I C (A) 50 Z t h(j h(j--s)(K/W) I C = f(V GE) IGBT 100 30 20 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 0,5 0,2 0,1 0,05 0,02 0,01 10-1 10 10-2 10-4 0 0 1 2 3 4 5 6 7 10-3 10-2 V G E (V) tp = 100 µs 25 °C D= V CE = 10 V 125 °C R th(j-s) = T j: Copyright Vincotech 150 °C 10-1 10 101 t p (s) 102 tp / T 1,13 K/W IGBT thermal model values R th (K/W) 5 7,12E-02 τ (s) 8,15E+00 1,29E-01 6,00E-01 4,31E-01 9,13E-02 3,15E-01 2,59E-02 1,31E-01 5,80E-03 5,02E-02 8,53E-04 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switch Characteristics Gate voltage vs Gate charge IGBT V GE = f(Q G ) V G E (V) 15 520V 12,5 130V 10 7,5 5 2,5 0 0 20 40 60 80 100 120 140 Q G (nC) At I C= 50 Copyright Vincotech A 6 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Diode Characteristics FWD Typical forward characteristics I F = f(V F ) Z th(j-s) = f(t p) 101 90 Z t h( jj--s) (K/W) IF (A) FWD Transient thermal impedance as a function of pulse width 75 100 60 45 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10-1 30 15 0 10-2 0 1 2 3 4 5 10-4 10-3 10-2 VF (V) tp = 250 µs T j: 10-1 100 101 1032 t p (s) 25 °C D= tp / T 125 °C R th(j-s) = 1,83 K/W 150 °C FWD thermal model values R (K/W) 6,05E-02 τ (s) 3,63E+00 1,50E-01 6,48E-01 8,27E-01 7,70E-02 4,06E-01 1,51E-02 2,16E-01 3,45E-03 1,73E-01 7,36E-04 Thermistor Characteristics Typical Thermistor resistance values Thermistor typical temperature characteristic Typical NTC characteristic as a function of temperature R T = f(T ) NTC-typical temperature characteristic R (Ω) 25000 20000 15000 10000 5000 0 25 50 75 100 125 T (°C) Copyright Vincotech 7 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Characteristics Figure 1. IGBT Figure 2. IGBT E = f(I C) E = f(rg) 1,2 1,6 E ( mWs) Typical swit ching energy losses as a f unct ion of gate resistor E (mWs) Typical swit ching energy losses as a f unction of collector current Eon Eon 0,9 1,2 Eon Eo n Eon Eon Eoff 0,6 0,8 Eoff E o ff 0,3 0,4 Eoff Eoff Eoff 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) 25 °C With an induc tive load at 300 V V CE = ±15 V V GE = R gon = 8 Ω R goff = 8 Ω T j: 5 10 15 150 °C 50 IC = Figure 3. FWD 25 30 R g ( Ω) 35 25 °C With an inductive load at 300 V V CE = ±15 V V GE = 125 °C 20 T j: 125 °C 150 °C A Figure 4. FWD Typical reverse recovered energy loss as a f unction of collector current Typical reverse recovered energy loss as a f unct ion of gat e resist or E rec = f(I c) E rec = f(r g ) 0,6 E (mWs) E (mWs) 0,8 Erec 0,6 0,45 Erec Erec 0,3 0,4 Erec 0,2 0,15 Erec Erec 0 0 0 10 20 30 With an induc tive load at 300 V V CE = ±15 V V GE = R gon = 8 Copyright Vincotech 40 50 60 70 80 90 I C (A) 0 100 25 °C T j: 5 10 With an inductive load at 300 V V CE = ±15 V V GE = 125 °C 150 °C Ω IC= 8 50 15 20 25 30 35 r g (Ω) 25 °C T j: 125 °C 150 °C A 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Characteristics Figure 5. IGBT Figure 6. IGBT Typical swit ching t imes as a f unct ion of collector current Typical swit ching t imes as a f unct ion of gate resistor t = f(I C) t = f(r g) 1 t ( μs) t ( μ s) 1 td(on) td(off ) 0,1 td(off ) 0,1 td(on) tr tr 0,01 0,01 tf tf 0,001 0,001 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) (A) With an induc tive load at 150 °C Tj= 300 V V CE = 5 10 15 20 25 r g (Ω) 35 With an inductive load at 150 °C Tj= 300 V V CE = V GE = ±15 V V GE = R gon = 8 Ω IC = R goff = 8 Ω Figure 7. FWD ±15 V 50 A Figure 8. FWD t rr = f(I C) t rr = f(R gon) 0,16 0,2 t rr (μs) Typical reverse recovery t ime as a f unct ion of IGBT t urn on gat e resist or t r r (μs) Typical reverse recovery t ime as a f unction of collector current trr trr 0,12 trr trr 0,15 0,08 0,1 0,04 trr 0,05 trr 0 0 0 10 20 30 40 50 60 70 80 90 100 0 I C (A) At 30 300 V V GE = ±15 V R gon = 8 Ω V CE= Copyright Vincotech 10 15 20 25 30 35 R g on (Ω) 25 °C T j: 5 At V CE = 125 °C V GE = 150 °C IC= 9 300 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Characteristics Figure 9. FWD Figure 10. FWD Typical recovered charge as a f unction of collector current Typical recoved charge as a f unct ion of IGBT t urn on gate resistor Q r = f(I C) Q r = f(R gon) 2,5 Q r (µC) Q r (μ C) 3 Qr Qr 2,5 2 Qr 2 1,5 Qr 1,5 1 1 Qr 0 At Qr 0,5 0,5 0 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 I C (A) 300 V V GE = ±15 V R gon = 8 Ω V CE = At 25 °C T j: At VCE= 125 °C V GE = 150 °C I C= Figure 11. FWD 300 V ±15 V 50 A T j: 125 °C 150 °C Figure 12. FWD Typical peak reverse recovery current current as a f unct ion of collect or current Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or I RM = f(I C) I RM = f(R gon) 80 35 R g o n (Ω) 25 °C I R M (A) I R M (A) 70 I RM 60 60 50 I RM 40 I RM 40 30 IRM I RM 20 20 IRM 10 0 0 0 At 20 40 300 V V GE = ±15 V R gon = 8 Ω V CE = Copyright Vincotech 60 80 I C (A) 0 100 10 15 20 25 30 35 R g o n (Ω) 25 °C T j: 5 At V CE = 125 °C V GE = 150 °C IC= 10 300 V ±15 V 50 A 25 °C T j: 125 °C 150 °C 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Characteristics Figure 13. FWD Figure 14. FWD Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor di F/dt ,di rr/dt = f(I c) di F/dt ,di rr/dt = f(R g) 12000 d i /dt (A/ (A/µ µs) d i /dt (A/ (A/µs) s) 10000 diF / dt di r r /dt 8000 di F / dt di r r/ dt 9000 6000 6000 4000 3000 2000 0 0 0 10 20 30 40 50 60 70 80 90 0 100 5 10 I C (A) 300 V V GE = ±15 V R gon = 8 Ω V CE = At 25 °C T j: At V CE = 125 °C V GE = 150 °C I C= Figure 15. 300 V ±15 V 50 A 15 20 25 30 35 R g o n (Ω) IGBT Reverse bias saf e operating area I C = f(V CE) I C (A) 120 I C MAX I c CHIP 100 M ODULE 80 Ic 60 40 V CE MAX 20 0 0 100 200 300 400 500 600 700 V C E (V) At 175 °C R gon = 8 Ω R goff = 8 Ω Tj = Copyright Vincotech 11 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Definitions General conditions = 150 °C = 8Ω Tj R gon = R goff Figure 1. IGBT Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f ) 8Ω Figure 2. IGBT Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon) 160 250 % % 140 200 tdoff 120 VCE 100 150 VGE 90% IC VCE 90% VCE 80 60 VGE 100 IC VGE tdon 40 50 tEoff 20 VGE 10% IC 1% 0 VCE 3% IC 10% 0 tEon -20 -0,1 -0,05 0 0,05 0,1 0,15 -50 2,95 0,2 3 3,05 3,1 3,15 3,2 3,25 t (µs) 3,3 t (µs) -15 V V GE (100%) = 15 V V C (100%) = 300 V I C (100%) = 50 A I C (100%) = t doff = 0,076 µs t don = 0,060 µs t Eoff = Figure 3. 0,125 µs t Eon = Figure 4. 0,152 µs V GE (0%) = -15 V V GE (100%) = 15 V V C (100%) = 300 V 50 A V GE (0%) = IGBT Turn-of f Swit ching Wavef orms & def init ion of t f IGBT Turn-on Swit ching Wavef orms & def init ion of tr 200 150 % % 125 IC 175 IC VCE fitted 150 100 IC 90% 125 VCE 75 100 IC 90% IC 60% 50 75 tr IC 40% 50 25 IC10% 25 IC 10% 0 0 tf -25 -0,015 -0,005 0,005 0,015 0,025 0,035 -25 0,045 3 t ( µs) V C (100%) = 300 3,02 3,04 3,06 V C (100%) = 300 3,1 V I C (100%) = 50 A I C (100%) = 50 A tf= 0,009 µs tr = 0,011 µs Copyright Vincotech 3,08 t (µs) V 12 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Definitions Figure 5. IGBT Turn-of f Swit ching Wavef orms & def init ion of t Eof f Figure 6. IGBT Turn-on Swit ching Wavef orms & def init ion of tEon 125 150 % IC 1% 100 % Eoff 125 Pon Poff Eon 100 75 75 50 50 25 25 VGE 90% VCE 3% VGE 10% 0 0 tEoff tEon -25 -25 -0,1 -0,05 0 0,05 2,9 0,1 2,95 3 3,05 P off (100%) = 14,99 kW P on (100%) = 14,99 kW E off (100%) = 0,34 mJ E on (100%) = 0,56 mJ t Eoff = 0,13 µs t Eon = 0,15 µs Figure 7. 3,1 3,15 t ( µs) t (µs) FWD Turn-of f Swit ching Wavef orms & def init ion of t rr 125 % Id 100 75 trr 50 25 0 IRRM 10% Vd -25 fitted -50 -75 IRRM 90% IRRM 100% -100 -125 3 3,05 3,1 3,15 3,2 t (µs) V d (100%) = 300 V I d (100%) = 50 A I RRM (100%) = -49 A t rr = 0,117 µs Copyright Vincotech 13 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet H-bridge Switching Definitions Figure 8. FWD Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr) Figure 9. FWD Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec) 150 150 % % Qrr Id 125 100 Erec 100 tErec 75 50 tQrr 50 0 Prec 25 0 -50 -25 -100 3 3,1 3,2 3,3 3,4 -50 3,5 3 t (µs) 3,05 3,1 3,15 3,2 3,3 3,35 3,4 t (µs) I d (100%) = 50 A P rec (100%) = 14,99 kW Q rr (100%) = 2,18 µC E rec (100%) = 0,47 mJ t Qrr = 0,26 µs t Erec = 0,26 µs Copyright Vincotech 3,25 14 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Ordering Code & Marking Version without thermal paste 12mm housing NN-NNNNNNNNNNNNNN NNNNNNNN WWYY UL Vinco LLLLL SSSS Ordering Code 10-FY074PA050SM-M582F38 Text Datamatrix in DataMatrix as M582F38 in packaging barcode as M582F38 Name Date code UL & Vinco Lot Serial NN-NNNNNNNNNNNNNN-NNNNNNNN WWYY UL Vinco LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Outline Pin table [mm] Pin 1 X 0 Y 28,2 2 3 28,2 S11 3 23,55 28,2 Therm1 4 28,65 28,2 Therm2 5 49,2 28,2 S13 6 52,2 28,2 G13 7 52,2 20,25 DC-2 8 52,2 17,75 DC-2 9 52,2 10,5 DC+ 10 52,2 8 DC+ 11 12 13 52,2 49,2 43,2 0 0 0 G14 S14 14 40,7 0 Ph2 15 38,2 0 Ph2 16 14 0 Ph1 17 11,5 0 Ph1 18 9 0 Ph1 19 3 0 S12 20 0 0 G12 21 0 8 DC+ 22 0 10,5 DC+ 23 0 17,75 24 0 20,25 DC-1 DC-1 Copyright Vincotech Function G11 Ph2 15 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Pinout Identification ID Component Voltage Current Function T11,T12,T13,T14 IGBT 650V 50A H-bridge Switch D11,D12,D13,D14 FWD 650V 30A H-bridge Diode Rt NTC - - Thermistor Copyright Vincotech 16 Comment 23 Jul. 2015 / Revision 2 10-FY074PA050SM-M582F38 datasheet Packaging instruction Standard packaging quantity (SPQ) 100 >SPQ Standard <SPQ Sample Handling instruction Handling instructions for flow 1 packages see vincotech.com website. Document No.: Date: 10-FY074PA050SM-M582F38-D2-14 23 Jul. 2015 Modification: Pages DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Copyright Vincotech 17 23 Jul. 2015 / Revision 2