MICROSEMI APT56F50B2_09

APT56F50B2
APT56F50L
500V, 56A, 0.10Ω Max, trr ≤280ns
N-Channel FREDFET
T-Max®
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
APT56F50B2
TO-264
APT56F50L
Single die FREDFET
D
G
S
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings Symbol
ID
Parameter
Ratings
Continuous Drain Current @ TC = 25°C
56
Continuous Drain Current @ TC = 100°C
35
175
Unit
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1200
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
28
A
1
Thermal and Mechanical Characteristics
Max
Unit
Total Power Dissipation @ TC = 25°C
780
W
RθJC
Junction to Case Thermal Resistance
0.16
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
-55
150
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
300
WT
Package Weight
TJ,TSTG
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
0.11
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
05-2009
PD
Typ
Rev C
Min
050-8129
Characteristic
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
APT56F50B2_L
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
VDS = 500V
TJ = 25°C
VGS = 0V
TJ = 125°C
VGS = ±30V
Min
Test Conditions
VDS = 50V, ID = 28A
Typ
Output Capacitance
43
8800
120
945
550
275
220
50
100
38
45
100
33
Min
Typ
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Max
0.10
5
Unit
V
V/°C
Ω
V
mV/°C
250
1000
±100
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
0.60
0.085
2.5
4
-10
VGS = 10V, ID = 28A
3
IDSS
Symbol
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
RDS(on)
Typ
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
Unit
S
pF
VGS = 0V, VDS = 0V to 333V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
VGS = 0 to 10V, ID = 28A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 28A
Current Rise Time
RG = 4.7Ω 6 , VGG = 15V
Turn-Off Delay Time
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
(Body Diode) 1
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
Peak Recovery dv/dt
S
TJ = 25°C
TJ = 125°C
ISD = 28A 3
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD ≤ 28A, di/dt ≤1000A/µs, VDD =
Max
38
175
1.20
3.07
10.1
14.5
1.0
280
520
20
Unit
A
G
ISD = 28A, TJ = 25°C, VGS = 0V
Diode Forward Voltage
Reverse Recovery Time
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Pulsed Source Current
trr
dv/dt
Test Conditions
333V, TJ = 125°C
V
ns
µC
A
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
050-8129
Rev C
05-2009
2 Starting at TJ = 25°C, L = 3.06mH, RG = 25Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
V
GS
= 10V
T = 125°C
TJ = -55°C
80
40
70
6V
60
50
40
5.5V
30
20
TJ = 150°C
5V
10
TJ = 125°C
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
2.5
0
NORMALIZED TO
VGS = 10V @ 28A
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
ID, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
175
125
TJ = -55°C
100
TJ = 25°C
75
TJ = 125°C
50
25
0
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
60
TJ = 25°C
50
Ciss
10,000
TJ = -55°C
C, CAPACITANCE (pF)
TJ = 125°C
40
30
20
1000
Coss
100
Crss
10
10
50
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0
0
175
ID = 28A
14
0
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
150
125
100
TJ = 25°C
75
TJ = 150°C
50
25
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
05-2009
VGS, GATE-TO-SOURCE VOLTAGE (V) 16
0
ISD, REVERSE DRAIN CURRENT (A) 0
Rev C
gfs, TRANSCONDUCTANCE
= 7 & 10V
6.5V
Figure 1, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ = 25°C
GS
80
120
0
V
J
90
160
APT56F50B2_L
100
050-8129
200
APT56F50B2_L
250
250
100
100
IDM
100µs
1ms
Rds(on)
10ms
100ms
DC line
1
1
13µs
1ms
10ms
Rds(on)
100ms
DC line
TJ = 150°C
TC = 25°C
1
0.1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
100µs
10
TJ = 125°C
TC = 75°C
0.1
ID, DRAIN CURRENT (A)
13µs
10
ID, DRAIN CURRENT (A)
IDM
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
C
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.18
D = 0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.16
0.3
0.06
t2
SINGLE PULSE
0.1
0.05
0.04
t1 = Pulse Duration
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.02
0
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX® (B2) Package Outline
1.0
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
05-2009
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
050-8129
Rev C
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source