FUJITSU SEMICONDUCTOR DATA SHEET DS405-00010-1v0-E ASSP High Power Factor LED Driver IC for LED lighting MB39C602 DESCRIPTION MB39C602 is a flyback type switching regulator contorller IC. The LED current is regulated by controlling the switching on-time depending on the LED load. It is most suitable for the general lighting applications, for example stocks of commercial and residential light bulbs and so on. FEATURES High power factor in Single Conversion Helps to achieve high efficiency and low EMI by detecting auxiliary transformer zero current Switching frequency setting depend on the FC pin current : 30 kHz to 120 kHz Control of the current of Primary Winding without the external sense resistor Built-in under voltage lock out function Built-in output over voltage protection function Built-in over temperature protection function Input voltage range VDD : 9V to 20V Input voltage range for LED lighting applications : AC110VRMS, AC230VRMS Package : SOP-8 (3.9mm × 5.05mm × 1.75mm [Max]) APPLICATIONS LED lighting PWM dimmable LED lighting etc. Power Supply online Design Simulation Easy DesignSim This product supports the web-based design simulation tool. It can easily select external components and can display useful information. Please access from the following URL. http://edevice.fujitsu.com/pmic/en-easy/?m=ds Copyright©2012 FUJITSU SEMICONDUCTOR LIMITED All rights reserved 2012.12 FUJITSU SEMICONDUCTOR CONFIDENTIAL MB39C602 PIN ASSIGNMENT (TOP VIEW) FC 1 8 VDD ZCD 2 7 GND CL 3 6 DRN OTC 4 5 VCG (FPT-8P-M02) PIN DESCRIPTIONS Pin No. Pin Name I/O Description 1 FC I Switching frequency setting pin. 2 ZCD I Transformer auxiliary winding zero current detecting pin. 3 CL I Pin for controlling peak current of transformer primary winding. 4 OTC I On-time control pin. 5 VCG - External MOSFET gate bias pin. 6 DRN O External MOSFET source connection pin. 7 GND - Ground pin. 8 VDD - Power supply pin. 2 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 BLOCK DIAGRAM CBULK Rst 1 13V Fault Latch 1 VVDD Switch VVCG LDO VVCG Shunt 10V/6V VDD UVLO 8 Co VCG 5 14V 1 HS Drive 2 CVCG 2V CVDD Enable PWM 10V/8V IFC FC IFC 1 1 1 DRN 6 Freq. Modulator D1 1/tSW DBIAS IFC Enable PWM D Q VGATE Current Sense Q Zero Current Detect ZCD 2 Driver 20mV OV Fault GND 1 7 5V 1 On-Time Modulation Discharge IOTC Fault Timing and Control VGATE Fault 3V 1V OTC 4 Shutdown and Restart Current Sence Fault Latch Reset UVLO Thermal Shutdown CL 3 RCL 1 MB39C602 2 Vs 1 Rs 1 DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 2 2 3 MB39C602 ABSOLUTE MAXIMUM RATINGS Parameter Power supply voltage Input voltage Input current Symbol Storage temperature Rating Min Max Unit VVDD VDD pin -0.3 +25.0 V VDRN DRN pin - 20 V VVCG VCG pin -0.3 +16.0 V VZCD ZCD pin -0.3 +6.0 V VOTC OTC pin -0.3 +6.0 V VCL CL pin -0.3 +6.0 V VFC FC pin -0.3 +2.0 V IVCG VCG pin - 10 mA IOTC OTC pin -1 0 mA ICL CL pin -1 0 mA IFC FC pin 0 1 mA IDRN DRN pin - 800 mA IDRN DRN pin, Pulsed 400ns, 2% duty cycle -1.5 +6.0 A - 800* mW -55 +125 °C Output current Power dissipation Condition PD Ta +25°C TSTG *: The value when using two layers PCB. Reference: θja (wind speed 0m/s): +125°C/W WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. 4 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 RECOMMENDED OPERATING CONDITIONS Parameter Symbol Condition Value Min Typ Max Unit VDD pin input voltage VDD VDD pin 9 - 20 V VCG pin input voltage VCG VCG pin (from low-impedance source) 9 - 13 V VCG pin input current IVCG VCG pin (from high-impedance source) 10 - 2000 µA OTC pin resistance to GND ROTC OTC pin 25 - 100 kΩ CL pin resistance to GND RCL CL pin 24.3 - 200.0 kΩ ZCD pin resistance to auxiliary winding RZCD ZCD pin Transformer auxiliary winding connection resistor 50 - 200 kΩ VCG pin capacitance to GND CVCG VCG pin 33 - 200 nF VDD pin bypass capacitance CBP Ceramic capacitance to set between VDD and GND pin 0.1 - 1.0 µF Operating ambient temperature Ta - -40 +25 +85 °C WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 5 MB39C602 ELECTRICAL CHARACTERISTICS Symbol Pin No. VCG (OPERATING) 5 VCG (DISABLED) 5 ΔVCG 5 IVCG (SREG) 5 VCG Shunt Load Regulation VCG LDO regulation voltage VCG LDO Dropout voltage UVLO Turn-on threshold voltage UVLO Turn-off threshold voltage UVLO hysteresis VDD switch on-resistance Fault Latch Reset VDD voltage Minimum switching period Maximum switching period ΔVCG (SREG) 5 VCG (LREG) 5 VCG (LREG, DO) Parameter VCG voltage (Operating) VCG voltage (Disable) VCG voltage difference VCG Shunt input current VDD and VCG SUPPLY MODULATION DRIVER Condition (Ta = +25°C, VVDD = 12V) Value Unit Min Typ Max VVDD=14V, IVCG=2.0mA VOTC=0V, IVCG=26μA VCG (DISABLED) VCG (OPERATING) VVCG=VCG (DISABLED)100mV, VOTC=0V VOTC=0V, 26μA<IVCG≤5mA 13 14 15 V 15 16 17 V 1.75 2.00 2.15 V - 12 26 μA - 125 200 mV VVDD=20V, IVCG=-2mA - 13 - V - VDD-VCG, VVDD=11V, IVCG=-2mA - 2.0 2.8 V VDD (ON) 8 - 9.7 10.2 10.7 V VDD (OFF) 8 - 7.55 8.00 8.50 V ΔVDD (UVLO) 8 1.9 2.2 2.5 V RDS, ON (VDD) 6,8 - 4* 10* Ω 5.6 6.0 6.4 V VDD (ON) - VDD (OFF) VVCG=12V, VVDD=7V, IDRN=50mA VDD (FAULT RESET) 8 tSW (HF) 6 IFC=5μA 7.215 7.760 8.305 μs tSW (LF) 6 IFC= 165μA 31.5* 35.0* 38.5* μs DRN peak current IDRN (peak) 6 6 IFC=5μA, ICL=100μA IFC=5μA, ICL=30μA - 3* 1* - A A Minimum peak current for RCL open IDRN (peak, absmin) 6 RCL=OPEN - 0.45* - A ILIM blanking time tBLANK (ILIM) 6 - 400* - ns CL voltage FC voltage Driver on-resistance Driver off leakage current High-side driver on-resistance VCL VFC RDS (on) (DRN) 3 1 6,7 IFC=5μA, RCL=100kΩ, 1.2A pull-up on DRN IFC=5μA IFC=10μA IDRN=4.0A IDRN (OFF) 6,7 VDRN=12V RDS (on) (HSDRV) 5,6 DRN discharge current IDIS 6,7 6 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL - High-side driver current = 50mA VDD=OPEN, DRN=12V, Fault latch set 2.94 3.00 3.06 0.34 0.70 0.84 200* 400* V V mΩ - 1.5 20.0 μA - 6* 11* Ω 2.38 3.40 4.42 mA DS405-00010-1v0-E MB39C602 Parameter Zero current threshold voltage Clamp voltage Start timer operation TRANSFORMER threshold voltage ZERO CURRENT Driver turn-on Delay DETECTION time Wait time for zero current detection Start timer period OVP threshold voltage OVERVOLTAGE OVP blanking time FAULT Input bias current Shutdown Threshold voltage SHUTDOWN THRESHOLD Shutdown OTC current MAXIMUM ON ON-Time TIME OTC voltage Shutdown temperature OTP POWER SUPPLY CURRENT Pin No. Condition VZCD (TH) 2 - VZCD (CLAMP) 2 IZCD=-10μA VZCD (START) 2 - tDLY (ZCD) 6 tWAIT (ZCD) 6 tST VZCD (OVP) tBLANK, OVP IZCD (bias) 6 2 6 2 VZCD=0V VOTC (Vth) Symbol Value Unit Min Typ Max 5* 20* 50* mV -200 -160 -100 mV 0.10 0.15 0.20 V - 150 - ns - 2.0 2.4 2.8 μs VZCD=5V 150 4.85 0.6 -0.1 240 300 5.00 5.15 1.0 1.7 0 +0.1 μs V μs μA 4 OTC= 0.7 1.0 1.3 V IOTC, PU 4 VOTC= VOTC (vth) -600 -450 -300 μA tOTC VOTC TSD 6 4 - 3.4 3.8 4.2 2.7 3.0 3.3 - +150* - μs V °C Hysteresis TSD_HYS - Power supply current IVDD (STATIC) IVDD (OPERATING) 8 8 Power supply current for UVLO IVDD (UVLO) 8 ROTC=76kΩ Tj, temperature rising Tj, temperature falling,degrees below TSD VVDD=20V, VZCD=1V VVDD=20V VVDD= VDD (ON) 100mV 150Ω pull-up 12V on DRN - +25* - °C 1.36 - 1.80 3.0* 2.34 3.7* mA mA - 285 500 uA *: Standard design value DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 7 MB39C602 FUNCTION EXPLANATION (1) LED Current Control Function MB39C602 is a flyback type switching regulator controller. The LED current is regulated by controlling the switching on-time depending on the LED load.The LED current is converted into detecting voltage (Vs) by sense resistor (Rs) connected in series with LED. Vs is compared by an external error amplifier (Err AMP).When Vs falls below a reference voltage, Err AMP output rises and the current that flows into the Opto-Coupler is decreased. The OTC pin current is controlled via the Opto-Coupler in the on-time control block. In on-time control, it controls on-time at OTC pin current. So, on-time increases when the current of the OTC pin decreases. And the average current supplied to LED is regulated, because on-time is regulated at the constant switching frequency. (2) Cascode Switching The switch in Primary Winding is a cascode connection.The gate of external MOSFET is connected with the VCG pin, and the source is connected with the drain of internal Driver MOSFET. When the swich is on-state, internal Driver MOSFET is turned on, HS Driver MOSFET is turned off, and the source voltage of external MOSFET goes down to GND. For this period the DC bias is supplied to the gate of external MOSFET from the VCG pin. Therefore external MOSFET is turned on. When the switch is off-state, internal Driver MOSFET is turned off, HS Driver MOSFET is turned on, and the source voltage of external MOSFET goes up to VCG voltage. For this period the DC bias is supplied to the gate of external MOSFET from the VCG pin. Therefore external MOSFET is turned off. Moreover, the current flowing into internal Driver MOSFET is equal to the current of Primary Winding. Therefore, the peak current into Primary Winding can be detected without the sense resistor. (3) Natural PFC (Power Factor Correction) Function In the AC voltage input, when the input current waveform is brought close to the sine-wave, and the phase difference is brought close to Zero, Power Factor is improved. In the flyback method operating in discontinuous conduction mode, when the input capacitance is set small, the input current almost becomes equal with peak current (IPEAK) of Primary Winding. I PEAK = ( VBULK t ON LMP ) = (( )) VBULK LMP tON VBULK : Supply voltage of Primary Winding LMP : Inductance of Primary Winding tON : On-time In on-time control, if loop response of Error Amp. is set to lower than the AC frequency (below 1/10 of the AC frequency), on-time can be constant. Therefore, input current is proportional to input voltage, so Power Factor is regulated. 8 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 (4) Power-Up Sequencing When the voltage is input to VBULK, the electric charge is charged to capacitance of the VCG pin (CVCG) through starting resistor (Rst). So, the voltage of the VCG pin rises. The voltage of the DRN pin rises by source follower when the voltage of the VCG pin reaches the threshold voltage of the external HVMOSFET. The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor (CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started. After the switching begins, the voltage at the VDD pin is supplied from Auxiliary Winding through the external diode (DBIAS). The voltage of an Auxiliary Winding is decided by rolling number ratio of Auxiliary Winding and Secondary Winding, and the voltage of Secondary Winding. Therefore, the voltage at the VDD pin is not supplied, until the voltage of Auxiliary Winding rises more than the voltage at the VDD pin. In this period, it is necessary to set the capacitor of the VDD pin to prevent the voltage of the VDD pin from falling below the threshold voltage of UVLO. The external Schottky diode (D1) is required between the DRN pin and VDD pin. This diode is used to prevent the current that flows through the body diode of the VDD Switch. Current Passing When Starting VBULK Rst Primary Winding Ist HV-MOSFET CVCG D1 VDD Start-up Current CVDD DBIAS VDD Operating and LPM Current VDD Auxiliary Winding VCG 8 5 VDD Switch HS Drive VCG Shunt UVLO 10V/8V Enable PWM 14V DRN 6 2V Fault Driver PWM Control DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 7 GND 9 MB39C602 Power-Up Sequencing VAC VLED UVLO threshold 10V VDD VCG UVLO threshold 8V DRN (5) Power Down Sequencing When AC power is removed from the AC line, the current does not flow to Secondary Winding even if HV MOSFET is switching. The LED current is supplied from the output capacitance and decreases gradually. Similarly, the voltage at the VDD pin decreases because the current does not flow into Auxiliary Winding. The switching stops and MB39C602 becomes shutdown when the voltage at the VDD pin falls below the threshold voltage of UVLO. Power Down Sequencing VAC VLED VDD UVLO threshold 8V VCG DRN 10 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 (6) OTC Part It is set on-time by connecting resistance (ROTC) with OTC pin. As shown in following figure, the on-time can be controlled by connecting the collector of the Opto-Coupler through resistor from OTC. OTC pin Control On-Time Modulation Fault Timing and Control VGATE IOTC Fault 3V 1V OTC Shutdown and Restart 4 UVLO Fault Latch Reset Thermal Shutdown R OTC The following figure shows how the on-time is programmed over the range of between 1.5μs and 5.0μs for either range of programming resistors. On-time is related to the programmed resistor based on the following equations. ROTC = tOTC × (2 × 1010 [ Ω S ]) tOTC - Constant On-Time [μs] On-time Setting Range 5.0 1.5 30 100 ROTC - Constant On-Time Resistance [kΩ] Moreover, it can be shutted down by making the voltage of the OTC pin below "VOTC (Vth) (typ 1V)". DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 11 MB39C602 (7) CL Part It is set the peak current of Primary Winding by connecting resistance with CL pin. The maximum peak current of Primary Side is set by connecting resistance (RCL) between the CL pin and GND. IDRN(pk) = ( 100kV ) RCL An about 400ns blanking time of the beginning of switching cycle is masking the spike noise. As a result, it prevents the sense of current from malfunctioning (See the figure below.). Peak Current Control with CL pin DRN 6 IDRN From High-Voltage MOSFET Source Driver V GATE t BLANKCL Current Sense GND 7 I CL 3V CL 3 RCL 12 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 (8) FC Part The switching frequency is controlled by setting the current of the FC pin. In on-time control, the switching frequency is set by pulling up the FC pin to VDD. Switching frequency range is from 30kHz to 120kHz. tSW (max) - Max Switching Frequency [kHz] Switching Frequency Range 120 30 5 50 100 150165 200 IFC-fSW Control Current [μA] DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 13 MB39C602 (9) ZCD Part MB39C602 requires the following two conditions in order to start the next switching cycle. 1. 2. The time since the last turn-on edge must be equal to or longer than the switching time set by IFC. Immediately after zero current detection at ZCD pin. Or, the time since the last zero current detection must be longer than tWAIT (ZCD) (2.4μs or less). The ZCD pin is connected with Auxiliary Winding of the transformer through the resistance division, and detects zero current as shown below. A delay, 50ns to 200ns, can be added with CZCD to adjust the turn-on of the primary switch with the resonant bottom of Primarty Winding waveform. Switching Waveform at detecting zero current High Voltage MOSFET Drain CZCD - Based Delay ZCD Inpu t Switching Time Switching Time (tSW) by IFC IDRN ZCD pin Connection NP NS NB 1 RZCD1 Zero Current Detect ZCD 2 RZCD2 CZCD 20mV OV Fault Fault Timing and Control 5V 14 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 VARIOUS PROTECTION CIRCUITS Under voltage lockout protection (UVLO) The under voltage lockout protection (UVLO) protects IC from malfunction and protects the system from destruction/deterioration during the transient state and momentary drop due to start up for the power supply pin voltage (VDD). The voltage decrease of the VDD pin is detected with comparator, and output HS DRIVER is turned off and output DRIVER is turned off, and the switching is stopped. The system returns if the VDD pin becomes more than the threshold voltage of the UVLO circuit. Output over voltage Proteciton (OVP) When LED is in the state of open and the output voltage rises too much, the voltage of Auxiliary Winding and the voltage of the ZCD pin rise. The over voltage is detected by sampling this voltage of the ZCD pin. When ZCD pin voltage rises more than the threshold voltage of OVP, the over voltage is detected. Output HS DRIVER is turned off, and output DRIVER is turned off, and the switching is stopped. (latch-off) If the VDD pin becomes below the voltage of Fault Latch Reset, OVP is released. Over temperature protection (OTP) The over temperature protection (OTP) is a function to protect IC from the thermal destruction. When the junction temperature reaches +150°C, output HS DRIVER is turn off, and output DRIVER is turned off, and the switching is stopped. It returns again when the junction temperature falls to +125°C (automatic recovery). DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 15 MB39C602 VARIOUS FUNCTION TABLES DRN Function Detection Condition at Discharge LS_DRV HS_DRV VDD SW Protected SW Operation Normal Operation Under Voltage Lockout Protection (UVLO) OTC Shutdown Return Remarks Condition OFF OFF - - - OFF OFF ON OFF VDD < 8.0V VDD > 10.2V Standby OFF OFF ON OFF OTC = GND OTC > 1V Standby Output Over Voltage Protection (OVP) OFF OFF ON ON ZCD > 5V VDD < 6V → VDD > 10.2V Latch-off Over Temperature Protection (OTP) OFF OFF ON OFF Tj > +150°C Tj < +125°C - 16 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 I/O PIN EQUIVALENT CIRCUIT SCHEMATIC Pin No. Pin Name 1 FC Equivalent Circuit Schematic Vref 5V 2 FC 1 GND 7 ZCD Vref 5V 3 ZCD 2 GND 7 CL Vref 5V 4 CL 3 GND 7 OTC Vref 5V OTC 4 GND 7 DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 17 MB39C602 Pin No. Pin Name 5 VCG Equivalent Circuit Schematic VDD 8 Vref 5V 5 VCG 6 DRN 6 DRN GND 7 18 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 USAGE PRECAUTION 1. Do not configure the IC over the maximum ratings. If the IC is used over the maximum ratings, the LSI may be permanently damaged. It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of these conditions can have an adverse effect on the reliability of the LSI. 2. Use the device within the recommended operating conditions. The recommended values guarantee the normal LSI operation under the recommended operating conditions. The electrical ratings are guaranteed when the device is used within the recommended operating conditions and under the conditions stated for each item. 3. Printed circuit board ground lines should be set up with consideration for common impedance. 4. Take appropriate measures against static electricity. Containers for semiconductor materials should have anti-static protection or be made of conductive material. After mounting, printed circuit boards should be stored and shipped in conductive bags or containers. Work platforms, tools, and instruments should be properly grounded. Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in serial between body and ground. 5. Do not apply negative voltages. The use of negative voltages below - 0.3 V may make the parasitic transistor activated to the LSI, and can cause malfunctions. DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 19 MB39C602 ORDERING INFORMATION Part number Package MB39C602PNF 8-pin plastic SOP (FPT-8P-M02) 20 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL Remarks DS405-00010-1v0-E MB39C602 RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION The LSI products of FUJITSU SEMICONDUCTOR with “E1” are compliant with RoHS Directive, and has observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB), and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters “E1” is RoHS compliant. MARKING FORMAT (Lead Free version) XXXX XXX INDEX DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL Lead-free version 21 MB39C602 LABELING SAMPLE (Lead free version) Lead-free mark JEITA logo JEDEC logo MB123456P - 789 - GE1 (3N) 1MB123456P-789-GE1 1000 (3N)2 1561190005 107210 G Pb QC PASS PCS 1,000 MB123456P - 789 - GE1 2006/03/01 ASSEMBLED IN JAPAN MB123456P - 789 - GE1 1/1 0605 - Z01A 1000 1561190005 The part number of a lead-free product has the trailing characters "E1". 22 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL "ASSEMBLED IN CHINA" is printed on the label of a product assembled in China. DS405-00010-1v0-E MB39C602 MB39C602PNF RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL [FUJITSU SEMICONDUCTOR Recommended Mounting Conditions] Recommended Reflow Condition Item Condition Mounting Method IR (infrared reflow), warm air reflow Mounting times 2 times Storage period Storage conditions Before opening Please use it within two years after manufacture. From opening to the 2nd reflow Less than 8 days When the storage period after opening was exceeded Please process within 8 days after baking (125°C ±3°C, 24H+ 2H/─0H) . Baking can be performed up to two times. 5°C to 30°C, 70% RH or less (the lowest possible humidity) [Mounting Conditions] (1) Reflow Profile 260°C 255°C Main heating 170 °C to 190 °C (b) RT (e) Cooling (d) (e) (d') (a) "H" rank : 260°C Max (a) Temperature Increase gradient (b) Preliminary heating (c) Temperature Increase gradient (d) Peak temperature (d') Main Heating (c) : Average 1°C/s to 4°C /s : Temperature 170°C to 190°C, 60 s to 180 s : Average 1°C /s to 4°C /s : Temperature 260°C Max; 255°C or more, 10 s or less : Temperature 230°C or more, 40 s or less or Temperature 225°C or more, 60 s or less or Temperature 220°C or more, 80 s or less : Natural cooling or forced cooling Note: Temperature : the top of the package bod (2) JEDEC Condition: Moisture Sensitivity Level 3 (IPC/JEDEC J-STD-020D) DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 23 MB39C602 (3) Recommended manual soldering (partial heating method) Item Condition Before opening Within two years after manufacture Between opening and mounting Within two years after manufacture (No need to control moisture during the storage period because of the partial heating method.) Storage period Storage conditions 5°C to 30°C, 70% RH or less (the lowest possible humidity) Mounting conditions Temperature at the tip of a soldering iron: 400°C Max Time: Five seconds or below per pin* *: Make sure that the tip of a soldering iron does not come in contact with the package body. (4) Recommended dip soldering Item Condition Mounting times 1 time Storage period Before opening Please use it within two years after manufacture. From opening and mounting Less than 14 days When the storage period after opening was exceeded Please process within 14 days after baking (125°C ±3°C, 24H+ 2H/─0H) . Baking can be performed up to two times. Storage conditions 5°C to 30°C, 70% RH or less (the lowest possible humidity) Mounting condition Temperature at soldering tub: 260°C Max Time: Five seconds or below 24 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 PACKAGE DIMENSIONS 8-pin plastic SOP Lead pitch 1.27 mm Package width× package length 3.9 mm × 5.05 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.75 mm MAX Weight 0.06 g (FPT-8P-M02) 8-pin plastic SOP (FPT-8P-M02) Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. +0.25 +.010 *1 5.05 –0.20 .199 –.008 8 +0.03 0.22 –0.07 +.001 .009 –.003 5 *23.90±0.30 6.00±0.20 (.154±.012) (.236±.008) Details of "A" part 45° 1.55±0.20 (Mounting height) (.061±.008) 0.25(.010) 0.40(.016) 1 "A" 4 1.27(.050) 0.44±0.08 (.017±.003) 0.13(.005) M 0~8° 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.15±0.10 (.006±.004) (Stand off) 0.10(.004) C 2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10 Dimensions in mm (inches). Note: The values in parentheses are reference values. Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 25 MB39C602 MEMO 26 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E MB39C602 MEMO DS405-00010-1v0-E Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL 27 MB39C602 FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU SEMICONDUCTOR AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://us.fujitsu.com/micro/ Asia Pacific FUJITSU SEMICONDUCTOR ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel : +65-6281-0770 Fax : +65-6281-0220 http://sg.fujitsu.com/semiconductor/ Europe FUJITSU SEMICONDUCTOR EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/semiconductor/ FUJITSU SEMICONDUCTOR SHANGHAI CO., LTD. 30F, Kerry Parkside, 1155 Fang Dian Road, Pudong District, Shanghai 201204, China Tel : +86-21-6146-3688 Fax : +86-21-6146-3660 http://cn.fujitsu.com/fss/ Korea FUJITSU SEMICONDUCTOR KOREA LTD. 902 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://kr.fujitsu.com/fsk/ FUJITSU SEMICONDUCTOR PACIFIC ASIA LTD. 2/F, Green 18 Building, Hong Kong Science Park, Shatin, N.T., Hong Kong Tel : +852-2736-3232 Fax : +852-2314-4207 http://cn.fujitsu.com/fsp/ Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited: Sales Promotion Department 28 Limitation : development tool vendor use only FUJITSU SEMICONDUCTOR CONFIDENTIAL DS405-00010-1v0-E