TPS92210 www.ti.com SLUS989 – JANUARY 2010 NATURAL PFC LED LIGHTING DRIVER CONTROLLER Check for Samples: TPS92210 FEATURES DESCRIPTION • The TPS92210 is a natural power factor correction (PFC) light emmitting diode (LED) lighting driver controller with advanced energy features to provide high efficiency control for LED lighting applications. 1 • • • • • • • • • Flexible Operation Modes – Constant On-Time Enables Single Stage PFC Implementation – Peak Primary Current Cascoded MOSFET Configuration – Fully Integrated Current Control Without Sense Resistor – Fast and Easy Startup Discontinuous Conduction Mode or Transition Mode Operation Transformer Zero Energy Detection – Enables Valley Switching Operation – Helps to Achieve High Efficiency and Low EMI Open LED Detection Advanced Overcurrent Protection Output Overvoltage Protection Line Surge Ruggedness Internal Over-Temperature Protection 8-Pin SOIC (D) Package APPLICATIONS • • • • A PWM modulation algorithm varies both the switching frequency and primary current while maintaining discontinuous or transition mode operation in all regions of operation. The TPS92210 cascode architecture enables low switching loss in the primary side and when combined with the discontinuous conduction mode (DCM) operation ensures that there is no reverse recovery loss in the output rectifier. These innovations result in efficiency, reliability or system cost improvements over a conventional flyback architecture. The TPS92210 offers a predictable maximum power threshold and a timed response to an overload, allowing safe handling of surge power requirements. The overload fault response is user-programmed for retry or latch mode. Additional protection features include open-LED detection by output overvoltage protection and thermal shutdown. The TPS92210 is offered in the 8-pin SOIC (D) package. Operating junction temperature range is –40°C to 125°C TRIAC Dimmable LED Lighting Designs Residential LED Lighting Drivers for Retrofit A19 (E27/26, E14), PAR30/38, GU10, MR16, BR Drivers for Down and Architectural Wall Sconces, Pathway and Overhead Lighting Commercial Troffers and Downlights VIN AC + 4 TPS92210 OTM VCG 5 3 PCL DRN 6 2 VSD GND 7 1 FB VDD 8 VOUT LED ISENSE and Conditioning UDG-09152 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated TPS92210 SLUS989 – JANUARY 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION OPERATING TEMPERATURE RANGE, TA PACKAGE –40°C to 125°C SOIC ORDERABLE DEVICE NUMBER PINS TPS92210DR TPS92210D TRANSPORT MEDIA QUANTITY Tape and Reel 2500 Tube 75 8 ABSOLUTE MAXIMUM RATINGS (1) All voltages are with respect to GND, –40°C < TJ = TA < 125°C, all currents are positive into and negative out of the specified terminal (unless otherwise noted) LIMIT –0.5 to +25 DRN, during conduction –0.5 to +2.0 DRN, during non-conduction Input voltage range VCG 20 (2) –0.5 to +16 TZE, OTM, PCL (3) V –0.5 to +7 FB (3) –0.5 to +1.0 VDD – VCG –7 to +10 (2) Continuous input current IVCG Input current range ITZE, IOTM, IPCL, IFB 10 (3) mA –3 to +1 DRN Output current UNIT VDD -4 DRN, pulsed 200ns, 2% duty cycle A –6 to +1.5 Operating junction temperature TJ –40 to +150 °C Storage temperature range Tstg –65 to +150 °C Lead temperature Soldering, 10 s +260 °C (1) (2) (3) These are stress ratings only. Stress beyond these limits may cause permanent damage to the device. Functional operation of the device at these or any conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability Voltage on VCG is internally clamped. The clamp level varies with operating conditions. In normal use, VCG is current fed with the voltage internally limited In normal use, OTM, PCL, VSD, and FB are connected to resistors to GND and internally limited in voltage swing PACKAGE DISSIPATION RATINGS (1) (1) (2) (3) 2 (2) PACKAGE θJA, THERMAL IMPEDANCE JUNCTION TO AMBIENT, NO AIRFLOW (°C/W) θJB, THERMAL IMPEDANCE JUNCTION TO BOARD, NO AIRFLOW (°C/W) TA = 25°C POWER RATING (mW) TA = 85°C POWER RATING (mW) TB = 85°C POWER RATING (mW) SOIC-8 (D) 165 (1) 55 (1) 606 (3) 242 (3) 730 (2) (3) Tested per JEDEC EIA/JESD51-1. Thermal resistance is a function of board construction and layout. Air flow reducex thermal resistance. This number is included only as a general guideline; see TI document (SPRA953) IC Package Thermal Metrics. Thermal resistance to the circuit board is lower. Measured with standard single-sided PCB construction. Board temperature, TB, measured approximately 1 cm from the lead to board interface. This number is provided only as a general guideline. Maximum junction temperature, TJ, equal to 125°C Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 RECOMMENDED OPERATING CONDITIONS Unless otherwise noted, all voltages are with respect to GND, –40°C < TJ = TA < 125°C. Components reference Figure 17. MIN MAX VDD Input voltage 9 20 VCG Input voltage from low- impedance source 9 13 IVCG Input current from a high impedance source 10 2000 ROTM Resistor to GND Shutdown/retry mode Latch-off mode UNIT V µA 25 100 150 750 24.3 100 kΩ kΩ RPCL Resistor to GND RTZE1 Resistor to auxiliary winding 50 200 kΩ CVCG VCG capacitor 33 200 nF CBP VDD bypass capacitor, ceramic 0.1 1 μF ELECTROSTATIC DISCHARGE (ESD) PROTECTION ESD Rating, Human Body Model (HBM) ESD Rating, Charged Device Model (CDM) MAX UNIT 2 kV 500 V Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 3 TPS92210 SLUS989 – JANUARY 2010 www.ti.com ELECTRICAL CHARACTERISTICS Unless otherwise stated: VVDD= 12 V, VVCG= 12 V, VTZE= 1 V, VFB= 0 V, GND= 0 V, a 0.1-μF capacitor exists between VDD and GND, a 0.1-μF capacitor exists between VCG and GND, RPCL=33.2 kΩ, ROTM= 380 kΩ, –40°C < TA< +125°C, TJ= TA PARAMETER TEST CONDITIONS MIN TYP MAX UNITS VDD and VCG SUPPLY VCG(OPERATING) VCG Voltage, Operating VDD = 14 V, IVCG = 2.0 mA 13 14 15 V VCG(DISABLED) VCG Voltage, PWM Disabled VDD = 12 V, IVCG = 15 μA, IFB = 350 μA 15 16 17 V ΔVCG Rise in VCG Clamping Voltage During UVLO, LPM, or Fault VCG(DISABLED) – VCG(OPERATING) 1.75 2 2.15 V IVCG(SREG) VCG Shunt Regulator Current VCG = VCG(DISABLED) -– 100 mV, VDD = 12 V 6 10 μA ΔVCG(SREG) VCG Shunt Load Regulation 10 μA ≤ IVCG ≤ 5 mA, IFB = 350 μA 125 200 mV VCG(LREG) VCG LDO Regulation Voltage VDD = 20 V, IVCG = – 2 mA VCG(LREG, VCG LDO Dropout Voltage VDD – VCG, VDD = 11 V, IVCG = – 2 mA DO) 13 V 1.5 2 2.5 V 10.2 10.7 V V VDD(ON) UVLO Turn-on Threshold 9.7 VDD(OFF) UVLO Turn-off Threshold 7.55 8 8.5 ΔVDD(UVLO) UVLO Hysteresis 1.9 2.2 2.5 V IVDD(OPERATING) Operating Current VDD= 20 V 2.5 3 3.7 mA IVDD(LPM) Idle Current Between Bursts IFB = 350 μA 550 900 μA IVDD(UVLO) Current for VDD < UVLO VDD = VDD(on) – 100 mV, increasing 225 300 μA RDS,ON(VDD) VDD Switch on Resistance, DRN to VDD VCG = 12 V, VDD == 7V, IDRN = 50 mA 4 10 Ω VDD(FAULT VDD for Fault Latch Reset 5.6 6 6.4 V 7.125 7.5 7.875 μs 31 34 38 μs RESET) MODULATION tSW(HF) (1) Minimum Switching Period, Frequency Modulation (FM) mode IFB = 0 μA, tSW(LF) (1) Maximum Switching Period, Reached at end of FM Modulation Range IFB = IFB, CNR3 – 20 μA, (1) (1) Maximum Peak Driver Current Over Amplitude Modulation(AM) Range IFB = 0 μA, RPCL = 33. 2 kΩ 2.85 3 3.15 A IFB = 0 μA, RPCL = 100 kΩ 0.8 0.9 1.0 A IDRN(peak,min) Minimum Peak Driver Current Reached at End of AM Modulation Range IFB, CNR2 0.7 0.85 1.1 A IFB, CNR2 + 10 μA, RPCL = 100 kΩ 0.2 0.33 0.5 A KP Maximum Power Constant For IDRN(peak,max) = 3 A 0.54 0.60 0.66 W/μH IDRN(peak,absmin) Minimum Peak Driver Independent of RPCL or AM Control RPCL = OPEN 0.3 0.45 0.6 A tBLANK(ILIM) Leading Edge Current Limit Blanking Time IFB = 0 μA, RPCL = 100 kΩ, 1.2-A pull-up on DRN PCL Voltage of PCL IDRN(peak,max) IFB,CNR1 (2) IFB,CNR2 – IFB,CNR1 (2) IFB,CNR3 – IFB,CNR2 (2) IFB, FB (1) (2) 4 LPM-HYST (2) + 10 μA, RPCL = 33.2 kΩ 220 ns IFB = 0 μA 2.94 3 3.06 IFB = (IFB,CNR3 – 20 μA) (1) 0.95 1 1.05 IFB range for FM modulation IFB increasing, tS = tS(LF), and IDRN(PK,) = IDRN,PK(MAX) 145 165 195 μA IFB range for AM modulation tS = tS,LF, IDRN PK ranges from IDRN,PK(MAX) to IDRN,PK(MIN) 35 45 65 μA IFM range for Low Power Mode(LPM) modulation IFB increasing until PWM action is disabled entering a burst-off state 50 70 90 μA IFB hysteresis during LPM modulation to enter burst on and off states IFB decreasing from above IFB,CNR3 10 25 40 μA Voltage of FB IFB = 10 μA 0.34 0.7 0.84 V V tSW sets a minimum switching period. Following the starting edge of a PWM on time, under normal conditions, the next on time is initiated following the first valley switching at TZE after tSW. The value of tSW is modulated by IFB between a minimum of tS(HF) and a maximum of tSW(LF) In normal operation, tSW(HF) sets the maximum operating frequency of the power supply and tS(LF) sets the minimum operating frequency of the power supply. Refer to Figure 24. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 ELECTRICAL CHARACTERISTICS (continued) Unless otherwise stated: VVDD= 12 V, VVCG= 12 V, VTZE= 1 V, VFB= 0 V, GND= 0 V, a 0.1-μF capacitor exists between VDD and GND, a 0.1-μF capacitor exists between VCG and GND, RPCL=33.2 kΩ, ROTM= 380 kΩ, –40°C < TA< +125°C, TJ= TA PARAMETER TEST CONDITIONS MIN TYP MAX UNITS 5 20 50 mV -200 -160 -100 mV 0.1 0.15 0.2 TRANSFORMER ZERO ENERGY DETECTION TZE(TH) TZE Zero Crossing Threshold TZE high to low generates switching period (tS has expired) TZE(CLAMP) TZE Low Clamp Voltage ITZE = –10 μA TZE(START) TZE Voltage Threshold to Enable the Internal Start Timer Driver switching periods generated at start timer rate tDLY(TZ2D) Delay from zero crossing to Driver turn-on 150-Ω pull-up to 12-V on DRN tWAIT(TZE) Wait time for zero energy detection Driver turn-on edge generated following tS with previous zero current detected tST Starter time-out period TZE = 0 V RDS(on)(DRN) Driver on-resistance IDRN(OFF) Driver off-leakage current RDS(on)(HSDRV) HSDRV on-resistance HS Driver Current = 50 mA IDRN,DSCH DRN Bulk Discharge VDD open, DRN = 12 V, Fault latch set 150 V ns 2 2.4 2.8 μs 150 240 300 μs IDRN = 4.0 A 90 190 mΩ IDRN = 12 V 1.5 20 μA 6 11 Ω 2 2.8 3.6 mA 4.85 5 5.15 V 0.6 1 1.7 μs –0.1 μA DRIVER OVERVOLTAGE FAULT TZE(OVP) Over voltage fault threshold at TZE tBLANK,OVP TZE blanking and OVP sample time from the turn-off edge of DRN Fault latch set ITZE(bias) TZE Input bias current TZE = 5 V –0.1 0 1.5 3 μA 200 250 300 ms OVERLOAD FAULT IFB(OL) Current to trigger overload delay timer tOL Delay to overload fault IFB = 0 A continuously tRETRY Retry delay in retry mode or after shutdown command ROTM = 76 kΩ ROTM(TH) Boundary ROTM between latch-off and retry modes See 750 (3) 100 120 ms 150 kΩ SHUTDOWN THRESHOLD VOTM(SR) Shutdown/retry threshold OTM high to low 0.7 1 1.3 V IOTM,PU OTM current when OTM is pulled low VOTM = VOTM(SR) –600 –450 –300 μA Latch-off ROTM = 383 kΩ 3.43 3.83 4.23 μs Shutdown/retry ROTM = 76 kΩ 3.4 3.8 4.2 μs 2.7 3 3.3 V MAXIMUM ON TIME tOTM VOTM OTM voltage THERMAL SHUTDOWN TSD (4) TSD_HYS (3) (4) (4) Shutdown temperature TJ, temperature rising (4) Hysteresis TJ, temperature falling, degrees below tSD (4) 165 °C 15 °C A latch-off or a shutdown/retry fault response to a sustained overload is selected by the range of ROTM. To select the latch-off mode, ROTM should be greater than 150 kΩ and tOTM is given by ROTM × (1.0 × 10-11). To select the shutdown/retry mode, ROTM should be less than 100 kΩ and tOTM is given by ROTM × (5.0 × 10-11). Thermal shutdown occurs at temperatures higher than the normal operating range. Device performance at or near thermal shutdown temperature is not specified or assured. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 5 TPS92210 SLUS989 – JANUARY 2010 www.ti.com DEVICE INFORMATION Functional Block Diagram + VVCG Fault Latch Reg Reset + 13 V VVDD Switch VVCG Shunt 10V/6V VDD 8 5 VCG 6 DRN 14 V HS Drive + 2V 10V/8V Enable PWM IFB 1 UVLO FB IFB Feedback Processing Modulators 0 A <IFB< 200 mA I >200 mA Low-Power Mode FB IFB=0 Overload TZE tSW IFB Freq. Modulator 1/tSW Enable PWM D Transformer Zero Energy Detect 2 Driver IFB Q 7.5 kW VGATE Q OV Fault Output Voltage Sense Bulk Discharge 7 GND 3 PCL 5V IOTM VGATE IP Latch or Retry + 1V 4 IFB Current Modulator Fault Timing & Control 3V OTM Fault On-Time Modulation and Fault Response Control Shutdown and Restart Fault Latch Reset UVLO Thermal Shutdown IFB TPS92210 UDG-09157 6 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 PIN CONFIGURATION FB 1 8 VDD TZE 2 7 GND PCL 3 6 DRN OTM 4 5 VCG PIN DESCRIPTIONS TERMINAL NAME DRN No. 6 I/O DESCRIPTION O The DRN pin is the drain of the internal low voltage power MOSFET of the TPS92210 and carries the peak primary inductor current, IPEAK(pri). Connect this pin to the source of the external cascode power MOSFET. A schottky diode between DRN and VDD is used to provide initial bias at startup. FB 1 I The FB pin is regulated at 0.7 V and only detects current input (FB current,IFB) which commands the operating mode of TPS92210. For peak-current mode control, this pin is connected to the emitter of the feedback opto coupler. In constant on-time control, the minimum switching period is programmed by forcing a constant current into this pin. GND 7 — This GND pin is the current return terminal for both the analog and power signals in the TPS92210. This terminal carries the full drain current, IDRN, which is equal to the peak primary current, IPEAK(pri), in addition to the bias supply current (IVDD) , and the gate voltage current (IVCG). OTM 4 I the OTM pin is internally regulated at 3 V and used to program the on-time of the cascode (flyback) switch by connecting a resistor (ROTM) from this pin to the quiet return of GND. The collector of the opto-coupler is connected to this pin for constant-on time control. The range of impedance connected at this pin determines the system fault response (latch-off or shutdown/retry) to overload and brownout fault conditions. An external shutdown/retry response can be initiated by pulling this pin low below 1 V. PCL 3 I The PCL pin programs the peak primary inductor current that is reached each switching cycle. The primary current is sensed with the RDS(on) of the internal MOSFET and is programmed by setting a threshold by connecting a low power resistor from this pin to the quiet return of GND. TZE 2 I A resistive divider between the primary-side auxiliary winding and this pin is used to detect when the transformer is demagnetized resulting in transformer zero energy. The ratio of the resistive divider at this pin can also be used to program the output overvoltage protection (OVP) feature. VCG 5 — The VCG pin provides the bias voltage for the gate of the cascode MOSFET. Place a 0.1-µF ceramic capacitor between VCG and GND, as close as possible to the high-voltage MOSFET. This pin also provides start-up bias through a resistor RSU, which is connected between this pin and the bulk voltage. VDD 8 — VDD is the bias supply pin for the TPS92210. It can be derived from an external source, or an auxiliary winding. Place a 0.1-µF ceramic capacitor between VDD and GND, as close to the device as possible. This pin also enables and disables the general functions of the TPS92210 using the UVLO feature. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 7 TPS92210 SLUS989 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS Unless otherwise stated: VVDD = 12 V, VVCG = 12 V, VTZE = 1 V, VFB = 0 V, GND = 0 V, a 0.1µF capacitor tied between VDD and GND, a 0.1-µF capacitor tied between VCG and GND, RPCL = 33.2 kΩ, ROTM = 380 kΩ, –40°C < TA < +125°C, TJ = TA BIAS SUPPLY CURRENT vs BIAS SUPPLY VOLTAGE DURING OPERATION BIAS SUPPLY CURRENT vs BIAS SUPPLY VOLTAGE DURING LOW POWER MODE 900 4.0 IFB = 10 mA VTZE = 1V VVCG = OPEN VVDD decreasing from 20 V 3.6 850 IVDD – Bias Supply Current – mA IVDD – Bias Supply Current – mA 3.8 IFB = 280.4 mA VVCG = OPEN VVDD decreasing from 20 V 3.4 3.2 3.0 800 750 700 650 600 2.8 550 2.6 8 10 12 14 16 18 8 20 10 16 18 Figure 1. Figure 2. BIAS SUPPLY CURRENT vs TEMPERATURE DURING LOW POWER MODE OPERATIONAL IVDD – BIAS CURRENT vs BIAS VOLTAGE 900 3.5 850 3.0 IVDD – Bias Supply Current – mA IVDD – Bias Supply Current – mA 14 800 750 700 650 600 2.5 2.0 VDD rising 0 V to 20V 1.5 IFB= 10 mA, VDD falling 20V to 0 V 1.0 IFB= 0 mA, VDD falling 20V to 0 V 0.5 550 -40 -25 -10 20 VVDD – Bias Supply Voltage – V VVDD – Bias Supply Voltage – V 0.0 5 20 35 50 65 80 95 110 125 0 TJ – Junction Temperature – °C Figure 3. 8 12 5 10 15 20 VVDD – Bias Voltage – V Figure 4. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) Unless otherwise stated: VVDD = 12 V, VVCG = 12 V, VTZE = 1 V, VFB = 0 V, GND = 0 V, a 0.1µF capacitor tied between VDD and GND, a 0.1-µF capacitor tied between VCG and GND, RPCL = 33.2 kΩ, ROTM = 380 kΩ, –40°C < TA < +125°C, TJ = TA OSCILLATOR FREQUENCY vs FEEDBACK CURRENT MINIMUM SWITCHING PERIOD vs TEMPERATURE 160 fSW – Switching Frequency – kHz Junction Temperature (°C) –40 25 125 TJ = 125°C and TJ = 25°C 140 120 100 80 60 TJ = –40°C 40 20 tSW(HF) – Minimum Switching Period – ms 8.0 0 0 50 100 150 200 250 7.8 7.6 7.4 7.2 7.0 -40 -25 -10 300 IFB – Feedback Control Current – mA 35 50 65 Figure 5. Figure 6. SWITCHING PERIOD vs AMBIENT TEMPERATURE PEAK DRN CURRENT vs FEEDBACK CURRENT 80 95 110 125 3.5 During Amplitude Modulation 3.0 IDRN(pk) – Peak DRN Current – A tSW(LF) – Minimum Switching Period – ms 20 TA – Ambient Temperature – °C 38 37 5 36 35 34 33 TA = –40°C 2.5 2.0 TA = 25°C 1.5 Ambient Temperature (°C) –40 25 125 1.0 0.5 32 31 -40 -25 -10 TA = 125°C 0.0 5 20 35 50 65 80 95 110 125 0 TA – Ambient Temperature – °C Figure 7. 50 100 150 200 250 300 IFB - Feedback Current - mA Figure 8. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 9 TPS92210 SLUS989 – JANUARY 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) Unless otherwise stated: VVDD = 12 V, VVCG = 12 V, VTZE = 1 V, VFB = 0 V, GND = 0 V, a 0.1µF capacitor tied between VDD and GND, a 0.1-µF capacitor tied between VCG and GND, RPCL = 33.2 kΩ, ROTM = 380 kΩ, –40°C < TA < +125°C, TJ = TA PEAK DRN CURRENT vs TRANSCONDUCTANCE (1/RPCL) PEAK DRN CURRENT vs AMBIENT TEMPERATURE 5 3.2 IFB = 0 mA 4 IDRN(pk) – Peak DRN Current – A IDRN(pk) – Peak DRN Current – A Best Results 24.3 kW < RPCL< 100 kW 3 2 1 3.1 3.0 2.9 Avoid Operation Here 0 0 10 20 30 40 2.8 -40 -25 -10 50 1/RPCL – mS 35 50 65 80 Figure 9. Figure 10. ON TIME vs ON-TIME MODULATION RESISTANCE ON TIME vs JUNCTION TEMPERATURE 95 110 125 4.3 4.2 tOTM – Constant On-Time – ms 5 tOTM – Constant On-Time – ms 20 TA – Ambient Temperature – °C 6 4 3 2 MODE Latch Off Shutdown/Retry 1 0 100 20 300 400 500 ROTM = 383 kW 4.1 4.0 3.9 3.8 3.7 3.6 3.5 3.4 0 600 3.3 -40 -25 -10 ROTM – On-Time Modulation Resistance – kW Figure 11. 10 5 5 20 35 50 65 80 95 110 125 TJ – Junction Temperature – °C Figure 12. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 TYPICAL CHARACTERISTICS (continued) Unless otherwise stated: VVDD = 12 V, VVCG = 12 V, VTZE = 1 V, VFB = 0 V, GND = 0 V, a 0.1µF capacitor tied between VDD and GND, a 0.1-µF capacitor tied between VCG and GND, RPCL = 33.2 kΩ, ROTM = 380 kΩ, –40°C < TA < +125°C, TJ = TA LOW VOLTAGE MOSFET RDS(on) vs AMBIENT TEMPERATURE RDS(on) OF HIGH SIDE DRIVE AND VDD SWITCH vs TEMPERATURE 160 12 120 RDS(on) – On-Time Resistance – W RDS(on) – On-Time Resistance – mW High-Side VDD Switch 100 80 60 40 20 -40 -25 -10 5 20 35 50 65 80 10 8 6 4 2 0 -40 -25 -10 95 110 125 TA – Ambient Temperature – °C 20 35 50 65 80 Figure 13. Figure 14. SAFE OPERTING AREA vs BOARD TEMPERATURE THERMAL COEFFICIENT – θJB vs POWER DISSIPATION 60 qJB – Thermal Coefficient – °C/W 2.0 1.5 1.0 0.5 0 -40 -25 -10 95 110 125 TA – Ambient Temperature – °C 2.5 PDISS – Power Dissipation – W 5 50 40 30 20 10 0.0 5 20 35 50 65 80 95 110 125 0 TB – Board Temperature – °C Figure 15. 0.25 0.50 0.75 1.00 1.25 PDISS – Power Dissipation – W Figure 16. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 11 TPS92210 SLUS989 – JANUARY 2010 www.ti.com + CBULK VIN AC RSU NP NS CVCG TPS92210 4 OTM VCG 5 3 PCL DRN 6 2 VSD GND 1 FB VDD 8 NB 7 CBP D1 + CVDD DBIAS RTZE1 LED ISENSE and Conditioning UDG-09180 Figure 17. Typical Application 12 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 DETAILED DESCRIPTION BIAS AND START-UP The TPS92210 controls the turn-ON and turn-OFF of the flyback switch through its source by using the cascode configuration. The cascode configuration is also used to provide the initial bias during start-up. The cascode architecture utilizes a low voltage switch whose drain, namely the DRN pin, is connected to the source of the high voltage MOSFET (HV MOSFET). The gate of the HV MOSFET is held at a constant DC voltage using the VCG pin. The TPS92210 cascode based HVMOSFET drive architecture is shown in Figure 18. Bulk Bulk Primary Winding Primary Winding External High-Voltage MOSFET External High-Voltage MOSFET Gate Bias + 14 VDC + Cascoded MOSFET Pair PWM Control Internal Low-Voltage MOSFET ON PWM Control Internal Low-Voltage MOSFET OFF UDG-09185 Figure 18. Cascoded Architecture The start-up bias uses a low-level bleed current from either the AC line or the rectified and filtered AC line through the startup resistor (RSU). The bleed current off the line (approximately 6 µA) charges a small VCG capacitor and raises the voltage at the HVMOSFET gate. The HVMOSFET acts as a source follower once the voltage at VCG pin reaches the threshold voltage of the HVMOSFET and raises the DRN pin voltage. During startup the TPS92210 is in undervoltage lockout (UVLO) state with the enable pulse-width modulation (PWM) signal low. This turns on the VDD switch connecting between the DRN pin and the VDD pin, thus allowing VVDD to also rise with VVCG minus a threshold voltage of HVMOSFET. An external schottky diode between DRN and VDD is used to steer away potentially high switching currents from flowing through the body diode of the internal VDD switch. The startup current and the operating current paths in the cascode architecture are shown in Figure 19. The VCG pin is shunt regulated at 14 V during normal operation and the regulation level is increased to 16 V during fault, UVLO and startup conditions. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 13 TPS92210 SLUS989 – JANUARY 2010 www.ti.com Bulk RSU (~10 MW) VDD VDD Operating, LPM Current 8 Primary Winding HVMOSFET CVCG (100 nF) VDD Start-up Current CVDD (~10 mF) ISU VCG D2 Auxiliary Winding 5 UVLO Enable PWM + 2V 10 V/8 V Fault Internal Regulators VCG Shunt 14 V VDD Switch DRN 6 Enable PWM UDG-09182 Figure 19. Start-Up and Operating Current in the Cascode Architecture for TPS92210 14 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 PRIMARY SIDE CURRENT SENSE The TPS92210 integrates all of the current sensing and drive, thereby eliminating the need for a current sense resistor. The internal low-voltage switch with typical RDS(on) of 90 mΩ drives the HVMOSFET through its source and the entire primary current of the transformer flows through this switch and out of the GND pin. The TPS92210 utilizes a current mirror technique to sense and control the primary current. The primary current flowing through the low-voltage switch is scaled and reflected to the PWM comparator where it is compared with the PCL pin current. Thus the peak current reached at each switching cycle is sensed and limited by this comparison. In peak current-mode control, based on the error signal input at the FB pin, the voltage at the PCL pin and hence the PCL pin current is modulated by TPS92210. The maximum peak primary current is programmed by connecting a low-power resistor from (RPCL) from PCL pin to the quiet return of GND. æ 100kV ö IDRN(pk ) = ç ÷ è RPCL ø (1) At the beginning of each switching cycle a blanking time of approximately 220 ns is applied to the internal current limiter. This allows the low-voltage switch to turn on without false limiting on the leading edge capacitive discharge currents. The drain-gate charge in the HVMOSFET does not affect the turn-off speed because the gate is connected to a low impedance DC source with the help of VCG pin. The cascode configuration enables very fast turn-off of the HVMOSFET and helps to keep switching losses low. Figure 20 illustrates the internal current sensing and control exhibited by programming the resistor at the PCL pin. Current Modulator I DRN,PK FB IFB 1 3 From Optocoupler Emitter IFB 1 210 V PCL, V IPCL PCL 3 DRN 1 3 i FB, µA 165 IDRN IPCL From High-Voltage MOSFET Source 6 210 100,000 IDRN Drive MOSFET GND 7 PWM Comparator tBLANKCL R R TPS92210 UDG-09186 Figure 20. Peak Current Limit (PCL) Pin Details Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 15 TPS92210 SLUS989 – JANUARY 2010 www.ti.com FEEDBACK AND MODULATION The TPS92210 can be programmed to operate in constant-on time control or in peak-current mode control based on how the error signal is fed back to its modulator. Constant-On Time Control Using the OTM Pin The power factor describes how well an AC load corresponds to a pure resistance. A flyback transformer operating in discontinuous conduction mode (DCM) creates a peak primary current described in Equation 2 æ ö ç ÷ æ VBULK ´ tON ö ç VBULK ÷ IPEAK = ç ÷=ç ÷ LM è ø ç æ LM ö ÷ ç ÷ ç tON ÷ øø èè where • • • LM is the magnetizing inductance of the flyback transformer tON is the on-time of the flyback switch (LM/tON) is expressed in units of (µH/s) (2) thus, V IPEAK = BULK (V / W ) æ LM ö ç ÷ è tON ø (3) If the on-time is limited to a fixed value, then the peak primary current in the transformer is directly proportional to the bulk supply voltage. Consequently, a flyback operating in DCM with a fixed inductance and fixed on-time behaves much like a pure resistance and exhibits a power factor close to unity when operating with a small bulk capacitance. The TPS92210 can easily be configured for constant on-time control, allowing fixed-frequency, single-stage power factor regulation. In constant-on time control, the on-time of the primary switch can be programmed by connecting a resistor (ROTM) between the OTM pin and the quiet return of GND. The on-time can be further modulated by connecting the collector of the opto-coupler to the OTM pin through a resistor as shown in Figure 21. On-Time Modulation and Fault Response Control IOTM Fault Timing and Control VGATE + OTM Latch or Retry 3V 1V UVLO Shutdown and Restart 4 Thermal Shutdown UDG-09187 Figure 21. On-Time Modulation Detail 16 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 The OTM multi-function pin is also used to program the system response to overload and brownout conditions. Figure 22 shows how the on-time is programmed over the range of between 1.5 µs and 5 µs for either range of programming resistors. The resistor range determines the controller response to a sustained overload fault (to either latch-off or to shutdown/retry) which is the same response for a line-sag, or brown out, condition. The on-time is related to the programmed resistor based on the following equations. (4) The on-time for the shutdown/retry response to overcurrent faults is shown in Equation 5. Wö æ ROTM = tOTM ´ ç 2 ´ 1010 ÷ sø è (5) tOTM – Constant On-Time – ms The on-time for latch-off response to overcurrent faults is show in Equation 4. Wö æ ROTM = tOTM ´ ç 1´ 1011 ÷ sø è 5 Shutdown/ Retry Latch-off 1.5 120-kW Threshold Retry vs Latch-off 100120 150 500 ROTM – Constant On-Time Resistance – kW UDG-09183 Figure 22. On-time Programming Range and Overload Fault Response Selection The OTM pin can also be used to externally shutdown the converter by pulling the OTM pin low below VOTM(SR) threshold (typically 1 V). The PWM action is disabled and the controller retries after the shutdown/retry delay of 750 ms. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 17 TPS92210 SLUS989 – JANUARY 2010 www.ti.com Peak-Current Mode Control Using the FB Pin In peak-current mode control, the FB pin is used to feed back the output error signal to the internal modulator. In this mode of control, the emitter of the opto-coupler is connected to the FB pin and a resistor (RFB) is connected from FB to the quiet return of GND to bleed off the dark current of the opto-coupler. The FB pin detects current input only, and the voltage at this pin is normally 0.7 V. The FB pin interface is outlined in Figure 23. VVDD VOUT IFB To Modulators ROPT 0 A < IFB < 200 mA IFB > 200 mA IFB = 0 A Low-Power Mode Overload U2 Opto-Coupler FB RFB Filter 1 IFB RFB TPS92210 GND1 CFB Filter GND1 TL431 GND2 UDG-09188 Figure 23. FB Pin Details for Peak-Current Mode Control The FB current (IFB) commands the TPS92210 to operate the flyback converter in one of the three modes • Frequency Modulation (FM) mode • Amplitude Modulation (AM) mode • Low power mode (LPM) The converter operates in FM mode with a large power load (23% to 100% the peak regulated power). The peak HVMOSFET current reaches its maximum programmed value and FB current regulates the output voltage by modulating the switching frequency, which is inversely proportional to tSW. The switching frequency range is nominally from 30 kHz (23% peak power) to 133 kHz (100% peak power). 18 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 Peak Current Control Current Modulator IDRN, PK 3 IFB IFB Frequency Modulator tS 1/tS VGATE IFB fSW(max)– Max Switching Frequency – (kHz) IFB IDRN,PK(max) – % of Maximum Peak DRN Current – % The maximum programmable HVMOSFET current, IDRN,PK(max), is set by the resistor on the PCL pin, as described in Equation 1. The converter operates in AM mode at moderate power levels (2.5% to 23% of the peak regulated power). The FB current regulates the output voltage by modulating the peak HVMOSFET current from 33% to 100% of the maximum programmed value while the switching frequency is fixed at approximately 30 kHz. The TPS92210 modulates the voltage on the PCL pin from 3 V to 1 V to vary the commanded peak current, as shown in Figure 24. FM Low Power Mode AM IFB,CNR1 IFB,CNR2 (165 mA) (210 mA) 100 IFB,CNR3 (275 mA) IFB,CNR3 – IFB,CNR2 (65 mA) 33 IFB,CNR2 – IFB,CNR1 (45 mA) 130 IFB,LPM-HYST (20 mA) 30 0 50 100 150 200 IFB – Feedback Current – mA 250 300 UDG-09156 Figure 24. FB Pin Based Modulation Modes The converter operates in LPM at light load (0% to 2.5% of the peak regulated power). The FB current regulates the output voltage in the Low Power Mode with hysteretic bursts of pulses using FB current thresholds. The peak HVMOSFET current is 33% of the maximum programmed value. The switching frequency within a burst of pulses is approximately 30 kHz. The duration between bursts is regulated by the power supply control dynamics and the FB hysteresis. The TPS92210 reduces internal bias power between bursts in order to conserve energy during light-load and no-load conditions. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 19 TPS92210 SLUS989 – JANUARY 2010 www.ti.com TRANSFORMER ZERO ENERGY DETECTION The TPS92210 ensures that the flyback converter always operates in DCM and initiates a new switching cycle only when the primary transformer has been completely reset or when its energy is zero. The TZE pin is connected through a resistive divider to the primary-side auxiliary winding for zero energy detection. The transformer zero energy is detected by monitoring the current sourced out of the TZE pin when the primary bias winding of the flyback converter is negative with respect to GND. The voltage at this pin is clamped at –160 mV during the negative excursions of the auxiliary winding. A small delay, between 50 ns and 200 ns, can be added with CTZE to align the turn-on of the primary switch with the resonant valley of the primary winding waveform enabling valley switching. Figure 25 shows the waveform on the HVMOSFET drain, the voltage at the TZE pin and the primary current in the transformer. It also illustrates how CTZE delays the voltage at the TZE pin to cause the TPS92210 to switch at the resonant valley. High Voltage MOSFET Drain CTZE-Based Delay TZE Input Modulated Switching Time Switching Time (tSW) IDRN (= IPRI) t – Time UDG-09184 Figure 25. TZE and HVMOSFET Drain Voltages for Valley Switching The TPS92210 requires that three conditions are satisfied before it can initiate a new switching cycle. • The time since the last turn-on edge must be equal to or greater than the time that is requested by the feedback processor as determined by the feedback current, IFB. • The time since the last turn-on edge must be longer than the minimum period that is built into the device (nominally 7.5 µs which equals 133 kHz). • Immediately following a high-to-low zero crossing of the TZE pin voltage. Or, it has been longer than tWAIT,TZE since the last zero crossing of the current has been detected The TZE pin is also used to program the output overvoltage protection or open-LED detection feature. The output voltage is monitored by TPS92210 by sampling the voltage at the auxiliary winding. The voltage is sampled after a fixed delay of 1 μs after the internal low-voltage switch has turned off. This allows the auxiliary winding to be sampled after the bias winding voltage settles from the transient. The output over-voltage threshold is set using the turns ratio of the auxiliary winding to the output secondary and a resistive divider into the TZE pin. The controller latches-off on an open-LED fault and requires a power recycle to reset the fault latch (VDD recycling below fault reset threshold of 6 V). The interface to the TZE pin for zero energy detection and OVP feature is shown in Figure 26. 20 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 TPS92210 www.ti.com SLUS989 – JANUARY 2010 NP NS NB RTZE1 TZE 2 RTZE2 Transformer Zero Energy Detect CTZE OV Fault Output Voltage Sense TPS92210 Fault Timing and Control 5V UDG-09189 Figure 26. TZE and Output Overvoltage Detection Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 21 TPS92210 SLUS989 – JANUARY 2010 www.ti.com Terminal Components (1) (2) NAME TERMINAL DESCRIPTION æ (K P ´ LM ) ö RPCL = 33.2k W ´ ç ÷ ç ÷ PIN è ø PCL 3 æ 100kV ö IDRN(pk ) = ç ÷ è RPCL ø where KP = 0.54 W/µH LM is the minimum value of primary inductance PIN = POUT/η η = efficiency DRN 6 M1, power MOSFET with adequate voltage and current ratings, VGS must have at least 20 V static rating. D1, Schottky diode, rated for at least 30 V, placed between DRN and VDD FB 1 100 kΩ GND 7 Bypass capacitor to VDD, CBP = 0.1 µF, ceramic For Latch-Off response to overcurrent faults: ROTM OTM 4 = Wö æ tOTM ´ ç 1´ 1011 ÷ sø è For shutdown/retry response to overcurrent faults: ROTM CVDD = = Wö æ tOTM ´ ç 2 ´ 1010 ÷ sø è IVDD(LPM) ´ tBURST DVDD(burst ) where ΔVDD(BURST) is the allowed VDD ripple during burst operation tBURST is the estimated burst period The typical CVDD value is approximately 48 µF. VDD 8 DBIAS must have a voltage rating greater than: VBULK (max ) ö æN ÷ VDBIAS =³ VOUT ´ ç PS + ç NPB ÷ NPB è ø where VDBIAS is the reverse voltage rating of diode D2 VBULK(max) is the maximum rectified voltage of CBULK at the highest line voltage VCG 5 CVCG = at least 10xCGS of the HVMOSFET, usually CVCG = 0.1 µF RTZE1 = TZE 2 (VOUT + VF ) ´ N PS 100 mA RTZE2 = NPB TZEOVP ´ RTZE1 æ NPS ö ç VOUT(pk) ´ ÷ - TZEOVP NPB ø è where VOUT is the average output voltage of the secondary VF is the forward bias voltage of the secondary rectifier VOUT(pk) is the desired output overvoltage fault level (1) (2) 22 Refer to the Electrical Characteristics Table for all constants and measured values, unless otherwise noted. Refer to Figure 17 for all component locations in the Terminal Components Table Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): TPS92210 PACKAGE OPTION ADDENDUM www.ti.com 5-Feb-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPS92210D ACTIVE SOIC D 8 TPS92210DR ACTIVE SOIC D 8 75 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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