IRF710 - New Jersey Semiconductor

., One..
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF710-713
MTP2N35/2N40
N-Channel Power MOSFETs,
2.25 A, 350-400 V
Power And Discrete Division
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid driver and high energy
pulse circuits.
Low RDS(on)
VGS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
IDSS, VDS(on). Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
TO-220AB
IRF710
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
Maximum Ratings
Rating
IRF710/712
MTP2N40
Rating
IRF711/713
MTP2N35
Unit
VDSS
Drain to Source Voltage'
400
350
V
VDQR
Drain to Gate Voltage'
R QS = 20 kO
400
350
V
VGS
Gate to Source Voltage
±20
±20
V
Operating Junction and
Storage Temperatures
-55 to +150
-55 to +150
°c
275
275
°c
Symbol
Tj.
Ts|g
TL
Characteristic
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum On-State Characteristics
RDS(on)
Static Drain-to-Source
On Resistance
b
Drain Current
Continuous at TC = 25°C
Continuous at T c = 100°C
Pulsed
IRF710-711
IRF712-713
MTP2N35/40
Unit
3.6
5.0
5.0
n
1.5
1.0
6.0
1.4
0.9
5.0
1.3
0.8
5.0
A
Maximum Thermal Characteristics
Rftjc
Thermal Resistance,
Junction to Case
6.4
6.4
2.5
°C/W
RftJA
Thermal Resistance,
Junction to Ambient
80
80
80
"C/W
PD
Total Power Dissipation
at Tc = 25°C
20
20
50
W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF710-713
MTP2N35/2N40
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Win
Max
Unit
Test Conditions
Off Characteristics
V(BH)DSS
loss
IGSS
Drain Source Breakdown Voltage1
V
1RF710/712/MTP2N40
400
IRF711/713/MTP2N35
350
Zero Gate Voltage Drain Current
MA
VDS = Rated VDSS, VGS = 0 V
1000
PA
VDS = 0.8 x Rated VDSs.
VGS = 0 V, T C -=125°C
±500
nA
VGS = ± 20 V, VDS = 0 V
250
Gate-Body Leakage Current
VGS = 0 V. ID = 250 uA
On Characteristics
Vos(lh)
RDS(on)
VDS(on)
Gate Threshold Voltage
V
IRF710-713
2.0
4.0
MTP2N35/2N40
2.0
4.5
IRF710/711
3.6
IRF71 2/71 3/MTP2N35/40
5.0
Drain-Source On-Voltage2
Forward Transconductance
ID = 1 mA, VDS = VGS
n
Static Drain-Source On-Resistance2
MTP2N35/2N40
Sis
ID = 250 MA. VDS = VGS
VGS = 10 V, ID -0.8 A
13
V
VGS = 10 V, I0 = 2.0 A
10
V
VGS = 10 V, ID- 1.0 A,
TC = 100°C
s to)
Vos =• 10 V, ID - 0.8 A
VDS = 25 v. VGS = 0 V
( = 1.0 MHz
0.5
Dynamic Characteristics
Qss
Input Capacitance
200
PF
GOSS
Output Capacitance
50
PF
Crss
Reverse Transfer Capacitance
15
pF
Switching Characteristics (Tc - 25°C, Figures 11, 12)3
tdfon)
Turn-On Delay Time
10
ns
t.
Rise Time
20
ns
Turn-Off Delay Time
10
ns
tf
Fall Time
15
ns
Q9
Total Gate Charge
7.5
nC
' td(oll)
VDD = 200 V, ID = 0.8 A
VGS -10 V, RQEN = 50 H
RQS = 50 Ji
VGS = 10 V, ID = 2.0 A
VDD = 200 V
IRF710-713
MTP2N35/2N40
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Typ
Unit
Max
Test Conditions
Source-Drain Diode Characteristics
VSD
tn-
Diode Forward Voltage
IRF710/711
1.6
V
IRF712/713
1.5
V
ls -1.3 A; Ves = 0 V
ns
Is -1.5 A; dls/dt = 25 A/f<S
Reverse Recovery Time
380
ls = 1 .5 A; VGS = 0 V
Notes
1. Tj-+25°C to +150"C
2. Pulse lost: Pulse width < 80 ps. Duty cyde<1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Typical Performance Curves
Figure 1 Output Characteristics
Figure 2 Static Drain to Source Resistance
vs Drain Current
1>12S'C
0
0.6
VM-DHAIN TO SOURCE VOLTAG£-V
1.0
1.5
2.0
ID-DRAIN CURRENT-A
2.5
3.0
PCIIMCF
Figure 3 Transfer Characteristics
Figure 4 Temperature Variation of Gate to
Source Threshold Voltage
IK o..
3
£ o.«
? tn
-SO
V(a—OAT8 TO SOURCE VOLTAGE—V
0
50
100
V-JUNCTION TEMPERATUM-'C
1