., One.. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V Power And Discrete Division Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. Low RDS(on) VGS Rated at ±20 V Silicon Gate for Fast Switching Speeds IDSS, VDS(on). Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Paralleling TO-220AB IRF710 IRF711 IRF712 IRF713 MTP2N35 MTP2N40 Maximum Ratings Rating IRF710/712 MTP2N40 Rating IRF711/713 MTP2N35 Unit VDSS Drain to Source Voltage' 400 350 V VDQR Drain to Gate Voltage' R QS = 20 kO 400 350 V VGS Gate to Source Voltage ±20 ±20 V Operating Junction and Storage Temperatures -55 to +150 -55 to +150 °c 275 275 °c Symbol Tj. Ts|g TL Characteristic Maximum Lead Temperature for Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics RDS(on) Static Drain-to-Source On Resistance b Drain Current Continuous at TC = 25°C Continuous at T c = 100°C Pulsed IRF710-711 IRF712-713 MTP2N35/40 Unit 3.6 5.0 5.0 n 1.5 1.0 6.0 1.4 0.9 5.0 1.3 0.8 5.0 A Maximum Thermal Characteristics Rftjc Thermal Resistance, Junction to Case 6.4 6.4 2.5 °C/W RftJA Thermal Resistance, Junction to Ambient 80 80 80 "C/W PD Total Power Dissipation at Tc = 25°C 20 20 50 W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF710-713 MTP2N35/2N40 Electrical Characteristics (Tc = 25°C unless otherwise noted) Characteristic Symbol Win Max Unit Test Conditions Off Characteristics V(BH)DSS loss IGSS Drain Source Breakdown Voltage1 V 1RF710/712/MTP2N40 400 IRF711/713/MTP2N35 350 Zero Gate Voltage Drain Current MA VDS = Rated VDSS, VGS = 0 V 1000 PA VDS = 0.8 x Rated VDSs. VGS = 0 V, T C -=125°C ±500 nA VGS = ± 20 V, VDS = 0 V 250 Gate-Body Leakage Current VGS = 0 V. ID = 250 uA On Characteristics Vos(lh) RDS(on) VDS(on) Gate Threshold Voltage V IRF710-713 2.0 4.0 MTP2N35/2N40 2.0 4.5 IRF710/711 3.6 IRF71 2/71 3/MTP2N35/40 5.0 Drain-Source On-Voltage2 Forward Transconductance ID = 1 mA, VDS = VGS n Static Drain-Source On-Resistance2 MTP2N35/2N40 Sis ID = 250 MA. VDS = VGS VGS = 10 V, ID -0.8 A 13 V VGS = 10 V, I0 = 2.0 A 10 V VGS = 10 V, ID- 1.0 A, TC = 100°C s to) Vos =• 10 V, ID - 0.8 A VDS = 25 v. VGS = 0 V ( = 1.0 MHz 0.5 Dynamic Characteristics Qss Input Capacitance 200 PF GOSS Output Capacitance 50 PF Crss Reverse Transfer Capacitance 15 pF Switching Characteristics (Tc - 25°C, Figures 11, 12)3 tdfon) Turn-On Delay Time 10 ns t. Rise Time 20 ns Turn-Off Delay Time 10 ns tf Fall Time 15 ns Q9 Total Gate Charge 7.5 nC ' td(oll) VDD = 200 V, ID = 0.8 A VGS -10 V, RQEN = 50 H RQS = 50 Ji VGS = 10 V, ID = 2.0 A VDD = 200 V IRF710-713 MTP2N35/2N40 Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted) Symbol Characteristic Typ Unit Max Test Conditions Source-Drain Diode Characteristics VSD tn- Diode Forward Voltage IRF710/711 1.6 V IRF712/713 1.5 V ls -1.3 A; Ves = 0 V ns Is -1.5 A; dls/dt = 25 A/f<S Reverse Recovery Time 380 ls = 1 .5 A; VGS = 0 V Notes 1. Tj-+25°C to +150"C 2. Pulse lost: Pulse width < 80 ps. Duty cyde<1% 3. Switching time measurements performed on LEM TR-58 test equipment. Typical Performance Curves Figure 1 Output Characteristics Figure 2 Static Drain to Source Resistance vs Drain Current 1>12S'C 0 0.6 VM-DHAIN TO SOURCE VOLTAG£-V 1.0 1.5 2.0 ID-DRAIN CURRENT-A 2.5 3.0 PCIIMCF Figure 3 Transfer Characteristics Figure 4 Temperature Variation of Gate to Source Threshold Voltage IK o.. 3 £ o.« ? tn -SO V(a—OAT8 TO SOURCE VOLTAGE—V 0 50 100 V-JUNCTION TEMPERATUM-'C 1