VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES • Designed and JEDEC-JESD47 2 (A) qualified according to • 140 °C max. operating junction temperature TO-220AB 1 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 1 (K) (G) 3 Available APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge PRODUCT SUMMARY Package TO-220AB Diode variation Single SCR IT(AV) 25 A VDRM/VRRM 1200 V VTM 1.6 V IGT 35 mA TJ - 40 °C to 140 °C DESCRIPTION The VS-40TTS12... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 25 A IRMS 40 VRRM/VDRM 1200 V ITSM 350 A 1.6 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 140 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V TJ °C 1200 1200 - 25 to 140 TJ = 25 °C VT TJ VOLTAGE RATINGS PART NUMBER VS-40TTS12PbF, VS-40TTS12-M3 Revision: 26-Jul-13 Document Number: 94390 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum RMS on-state current IT(AV) IRMS Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Maximum on-state voltage Low level value of on-state slope resistance Low level value of threshold voltage Maximum reverse and direct leakage current Holding current I2t VTM rt VT(TO) IRRM/IDRM IH Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current IL dV/dt dI/dt TEST CONDITIONS TC = 93 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 80 A, TJ = 25 °C TJ = 140 °C TJ = 25 °C VR = Rated VRRM/VDRM TJ = 140 °C Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C Anode supply = 6 V, resistive load, TJ = 25 °C TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open VALUES UNITS 25 40 300 350 450 630 6300 1.6 11.4 0.96 0.5 12 A A2s A2s V m V mA 100 200 500 150 V/μs A/μs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 °C 35 mA Maximum required DC gate voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 °C 1.3 Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Maximum average gate power TJ = 140 °C, VDRM = Rated value W V 0.2 1.5 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C 0.9 4 TJ = 140 °C μs 110 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS DC operation Marking device Revision: 26-Jul-13 UNITS - 40 to 140 °C 0.8 °C/W 60 Mounting surface, smooth and greased 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220AB 40TTS12 Document Number: 94390 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12PbF, VS-40TTS12-M3 140 RthJC (DC) = 0.8 ˚C/W 130 120 Conduction Angle 110 30˚ 100 60˚ 90˚ 90 120˚ 80 180˚ 70 0 5 10 15 20 25 30 Maximum Average On-state Power Loss (W) Vishay Semiconductors DC 180˚ 120˚ 90˚ 60˚ 30˚ 60 50 40 30 RMS Limit 20 Conduction Period 10 Tj = 125˚C 0 0 10 20 30 40 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics 140 RthJC (DC) = 0.8 ˚C/W 130 120 Conduction Period 110 100 30˚ 90 60˚ 80 90˚ 120˚ 180˚ DC 70 0 5 180˚ 120˚ 90˚ 60˚ 30˚ 30 RMS Limit 20 Conduction Angle 10 Tj = 125˚C 0 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Revision: 26-Jul-13 240 220 200 180 160 140 120 1 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 60 40 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 260 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics 50 280 10 15 20 25 30 35 40 45 Average On-state Current (A) Maximum Average On-state Power Loss (W) 70 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C www.vishay.com 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 350 Of Conduction May Not Be Maintained. Initial Tj = 125˚C No Voltage Reapplied 300 Rated Vrrm Reapplied 250 200 150 100 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94390 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors Instantaneous On-state Current (A) 1000 Tj = 25˚C Tj = 125˚C 100 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) TJ = -10 ˚C TJ = 140 ˚C 1 VGD TJ = 25 ˚C Instantaneous Gate Voltage (V) 100 (3) (2) (1) Frequency Limited by PG(AV) IGD 0.1 0.001 (4) 0.01 0.1 1 Instantaneous Gate Current (A) 10 100 Transient Thermal Impedance ZthJC (°C/W) Fig. 8 - Gate Characteristics 1 Steady State Value (DC Operation) 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Revision: 26-Jul-13 Document Number: 94390 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 40 T T S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating, RMS value 3 - Circuit configuration: T = Single thyristor 4 - Package: T = TO-220 5 - Type of silicon: S = Standard recovery rectifier 6 - 7 - Voltage rating (12 = 1200 V) Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-40TTS12PbF 50 1000 PACKAGING DESCRIPTION Antistatic plastic tubes VS-40TTS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 26-Jul-13 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -M3 www.vishay.com/doc?95028 Document Number: 94390 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000