VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 25 A FEATURES 2 (A) • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature TO-220AB 1 2 3 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 (K) (G) 3 Available APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery charge. PRODUCT SUMMARY Package TO-220AB Diode variation Single SCR DESCRIPTION IT(AV) 16 A VDRM/VRRM 800 V, 1200 V VTM 1.25 V IGT 45 mA TJ - 40 °C to 125 °C The VS-25TTS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform IRMS VALUES 16 25 VRRM/VDRM ITSM UNITS A 800/1200 V 320 A 1.25 V dV/dt 500 V/µs dI/dt 150 A/µs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA VS-25TTS08PbF, VS-25TTS08-M3 800 800 VS-25TTS12PbF, VS-25TTS12-M3 1200 1200 VT 16 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER Revision: 26-Jul-13 10 Document Number: 94385 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS VALUES MAX. TYP. TC = 93 °C, 180° conduction half sine wave 16 10 ms sine pulse, rated VRRM applied 270 UNITS 25 10 ms sine pulse, no voltage reapplied 320 10 ms sine pulse, rated VRRM applied 365 10 ms sine pulse, no voltage reapplied 515 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 5152 A2s Maximum on-state voltage drop VTM 16 A, TJ = 25 °C 1.25 V 12.0 m 1.0 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current rt VT(TO) IRM/IDM TJ = 125 °C TJ = 25 °C TJ = 125 °C Holding current IH Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 0.5 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open A2s 10 150 - mA 200 500 V/μs 150 A/μs TRIGGERING PARAMETER TEST CONDITIONS SYMBOL VALUES UNITS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum average gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 10 °C 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = - 10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 26-Jul-13 TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 µs 110 Document Number: 94385 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS °C 1.1 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 25TTS08 Case style TO-220AB 130 25TTS12 25 25TTS.. Series RthJC (DC) = 1.1 °C/W Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) - 40 to 125 62 Marking device 120 Ø 110 Conduction angle 100 180° 90° 30° 60° 180° 120° 90° 60° 30° 20 15 RMS limit 10 Ø Conduction angle 5 25TTS.. Series TJ = 125 °C 120° 0 90 0 5 15 10 0 20 4 8 12 16 20 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 35 130 25TTS.. Series RthJC (DC) = 1.1 °C/W Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) UNITS DC operation Approximate weight Mounting torque VALUES 120 Ø 110 Conduction period 100 30° 90 60° 120° DC 180° 90° 80 DC 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction period 5 25TTS.. Series TJ = 125 °C 0 0 Revision: 26-Jul-13 5 10 15 20 25 30 0 5 10 15 20 25 30 Average On-State Current (A) Average On-State Current (A) Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Document Number: 94385 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors 300 350 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 260 240 Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. At any rated load condition and with rated VRRM applied following surge 280 220 200 180 160 300 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 250 200 150 VS-25TTS.. Series VS-25TTS.. Series 140 120 1 10 100 0.01 100 0.1 1 10 Pulse Train Duration (s) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 25 °C TJ = 125 °C 10 25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 10 V, 20 Ω tr = 0.5 µs, tp ≥ 6 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 65 Ω tr = 1 µs, tp ≥ 6 µs VGD IGD 0.1 0.001 (a) (b) TJ = 10 °C 1 (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms TJ = 25 °C TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) 0.1 (2) (1) Frequency limited by PG(AV) 25TTS.. Series 0.01 (3) 1 10 100 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 26-Jul-13 Document Number: 94385 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-25TTS..PbF Series, VS-25TTS..-M3 Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 25TTS.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 25 T T S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (25 = 25 A) 3 - Circuit configuration: 4 - T = Single thyristor Package: T = TO-220AB 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating 7 - Environmental digit: 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tubes VS-25TTS08PbF 50 1000 VS-25TTS08-M3 50 1000 Antistatic plastic tubes VS-25TTS12PbF 50 1000 Antistatic plastic tubes VS-25TTS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 26-Jul-13 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -M3 www.vishay.com/doc?95028 Document Number: 94385 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000