Bulletin I2233 rev. A 11/05
SAFEIR Series
40TTS12PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
Description/ Features
The 40TTS12PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
reliable operation up to 140°C junction temperature.
VT
< 1.6V @ 80A
ITSM
= 350A
VRRM = 1200V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Major Ratings and Characteristics
Characteristics
IT(AV)
Sinusoidal
Package Outline
Values
Units
25
A
waveform
IRMS
40
A
VRRM / VDRM
1200
V
ITSM
350
A
1.6
V
dv/dt
500
V/µs
di/dt
150
A/µs
- 40 to 140
°C
VT
TJ = 25°C
T
J
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TO-220
1
40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Voltage Ratings
Part Number
VRRM, maximum
VDRM , maximum
peak reverse voltage
peak direct voltage
V
V
°C
1200
1200
-25 to 140
40TTS12PbF
TJ
Absolute Maximum Ratings
Parameters
40TTS..
Units
IT(AV) Max. Average On-state Current
25
A
IRMS
Max. RMS On-state Current
40
ITSM
Max. Peak One Cycle Non-Repetitive
300
Surge Current
350
2
I t
2
Max. I t for fusing
450
Max. I 2√t for fusing
VTM
rt
10ms Sine pulse, no voltage reapplied
2
A s
A2√s
Max. On-state Voltage Drop
1.6
V
On-state slope resistance
11.4
mΩ
VT(TO) Threshold Voltage
0.96
V
IRM/IDM Max.Reverse and Direct
0.5
mA
Leakage Current
10
IH
Holding Current
100
IL
Max. Latching Current
t = 0.1 to 10ms, no voltage reapplied
@ 80A, TJ = 25°C
TJ = 140°C
TJ = 25 °C
TJ = 140 °C
VR = rated VRRM/ VDRM
mA
Anode Supply = 6V, Resistive load, Initial IT = 1A
Anode Supply = 6V, Resistive load
200
mA
dv/dt Max. Rate of Rise of off-state Voltage
500
V/µs
di/dt
150
A/µs
2
10ms Sine pulse, rated VRRM applied
10ms Sine pulse, no voltage reapplied
6300
Max. Rate of Rise of turned-on Current
@ TC = 93° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRM applied
630
I2√t
Conditions
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Triggering
Parameters
PGM
Max. peak Gate Power
40TTS..
Units
8.0
W
Conditions
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
35
mA
Anode supply = 6V, resistive load, TJ = 25°C
1.3
V
Anode supply = 6V, resistive load, TJ = 25°C
IGT
Max. required DC Gate Current
VGT
Max. required DC Gate Voltage
to trigger
to trigger
VGD
Max. DC Gate Voltage not to trigger
0.2
IGD
Max. DC Gate Current not to trigger
1.5
mA
TJ = 140°C, VDRM = rated value
40TTS..
Units
0.9
µs
TJ = 140°C, VDRM = rated value
Switching
Parameters
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
4
Conditions
TJ = 25°C
TJ = 140°C
110
Thermal-Mechanical Specifications
Parameters
40TTS..
Units
°C
TJ
Max. Junction Temperature Range
- 40 to 140
Tstg
Max. Storage Temperature Range
- 40 to 140
RthJC Max. Thermal Resistance Junction
0.8
°C/W
Conditions
DC operation
to Case
RthJA Max. Thermal Resistance Junction
60
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
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0.5
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220AC
3
40TTS12PbF SAFEIR Series
140
RthJC (DC) = 0.8 ˚C/W
130
120
Conduction Angle
110
30˚
100
60˚
90˚
90
120˚
80
180˚
70
0
5
10
15
20
25
30
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Bulletin I2233 rev. A 11/05
140
RthJC (DC) = 0.8 ˚C/W
130
120
Conduction Period
110
100
60˚
80
RMS Limit
20
Conduction Angle
10
Tj = 125˚C
0
0
5
10
15
20
25
30
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
180˚
120˚
90˚
60˚
30˚
30
120˚
0
70
50
40
30 RMS Limit
20
Conduction Period
10
Tj = 125˚C
0
0
220
200
180
160
140
120
1
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
10
20
30
40
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
240
10 15 20 25 30 35 40 45
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
260
5
DC
DC
180˚
120˚
90˚
60˚
30˚
60
Average On-state Current (A)
280
180˚
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
60
40
90˚
70
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
50
30˚
90
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350 Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
300
Rated Vrrm Reapplied
250
200
150
100
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Instantaneous On-state Current (A)
1000
Tj = 25˚C
Tj = 125˚C
100
10
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 ˚C
TJ = 140 ˚C
1 VGD
TJ = 25 ˚C
Instantaneous Gate Voltage (V)
100
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.1
0.001
(4)
0.01
0.1
1
Instantaneous Gate Current (A)
10
100
Transient Thermal Impedance ZthJC (°C/W)
Fig. 8 - Gate Characteristics
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 9 - Thermal Impedance ZthJC Characteristics
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5
40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
3.78 (0.15)
3.54 (0.14)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1.22 (0.05)
DIA.
6.48 (0.25)
6.23 (0.24)
1 2 3
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
2°
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
2.89 (0.11)
1.15 (0.04)
0.94 (0.04)
2.64 (0.10)
0.69 (0.03)
1 2 3
4.57 (0.18)
Base
Common
Cathode
0.61 (0.02) MAX.
2
4.32 (0.17)
5.08 (0.20) REF.
TO-220
Dimensions in millimeters (inches)
1
Anode
2
Common
Cathode
3
Anode
Part Marking Information
EXAMPLE: THIS IS A 40TTS12
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
6
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Ordering Information Table
Device Code
40
T
T
S
12
PbF
1
2
3
4
5
6
1
-
2
-
Current Rating, RMS value
Circuit Configuration
T = Single Thyristor
3
-
Package
4
-
5
-
Voltage Rating (12 = 1200V)
6
-
y none = Standard Production
T = TO-220
Type of Silicon
S = Standard Recovery Rectifier
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/05
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7