VISHAY VS-12TTS08PBF

VS-12TTS08PbF Series
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 12.5 A
FEATURES
2
(A)
• Designed and
JEDEC-JESD47
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
1 (K) (G) 3
APPLICATIONS
TO-220AB
• Typical applications are in input rectification and crowbar
(soft start) and these products are designed to be used
with Vishay HPP input diodes, switches and output
rectifiers which are available in identical package outlines.
PRODUCT SUMMARY
Package
TO-220AB
Diode variation
Single SCR
IT(AV)
8A
VDRM/VRRM
800 V
VTM
1.2 V
DESCRIPTION
IGT
15 mA
TJ
- 40 °C to 125 °C
The VS-12TTS08PbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
13.5
17
A
Capacitive input filter TA = 55 °C, TJ = 125 °C,
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
UNITS
8
A
IT(RMS)
12.5
VDRM/VRRM
800
V
ITSM
140
A
1.2
V
dV/dt
150
V/µs
dI/dt
100
A/µs
- 40 to 125
°C
8 A, TJ = 25 °C
VT
TJ
Range
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-12TTS08PbF
800
800
1.0
Revision: 24-Aug-11
Document Number: 94380
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TTS08PbF Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum latching current
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
140
A
72
I2t
t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C
1000
A2s
VTM
8 A, TJ = 25 °C
1.2
V
16.2
m
0.87
V
Maximum on-state voltage drop
Typical holding current
8
12.5
100
Maximum I2t for fusing
Maximum reverse and direct leakage
current
UNITS
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
I2t
Threshold voltage
TC = 108 °C, 180° conduction, half sine wave
VALUES
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
Maximum I2t for fusing
On-state slope resistance
TEST CONDITIONS
rt
VT(TO)
IRM/IDM
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
A2s
0.05
1.0
mA
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
IL
Anode supply = 6 V, resistive load
50
TJ = 25 °C
150
V/μs
100
A/μs
VALUES
UNITS
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
30
TRIGGERING
PARAMETER
Maximum peak gate power
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate current to
trigger
IGT
Maximum average gate power
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 65 °C
20
Anode supply = 6 V, resistive load, TJ = 25 °C
15
Anode supply = 6 V, resistive load, TJ = 125 °C
10
Anode supply = 6 V, resistive load, TJ = - 65 °C
1.2
Anode supply = 6 V, resistive load, TJ = 25 °C
1
Anode supply = 6 V, resistive load, TJ = 125 °C
0.7
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.2
0.1
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
Revision: 24-Aug-11
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.8
3
μs
100
Document Number: 94380
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TTS08PbF Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
VALUES
UNITS
- 40 to 125
°C
DC operation
1.5
Mounting surface, smooth and greased
0.5
Approximate weight
Mounting torque
oz.
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Case style TO-220AB
125
12TTS08
R thJC (DC) = 1.5 K/ W
120
115
Conduc tion Angle
110
30°
60°
90°
120°
180°
100
0
2
4
6
8
10
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
g
0.07
12TTS08
10
180°
120°
90°
60°
30°
9
8
7
6
RMSLimit
5
4
Conduction Angle
3
2
12TTS08
TJ= 125°C
1
0
0
12TTS08
R thJC(DC) = 1.5 K/ W
120
115
Conduction Period
110
30°
60°
90°
120°
105
180°
DC
100
0
2
4
6
8
10
12
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 24-Aug-11
2
3
4
5
6
7
8
9
Fig. 3 - On-State Power Loss Characteristics
14
Maximum Average On-state Power Loss (W)
Fig. 1 - Current Ratings Characteristics
125
1
Average On-state Current (A)
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
2
minimum
Marking device
105
°C/W
62
14
DC
180°
120°
90°
60°
30°
12
10
8
RMS Limit
6
4
Conduction Period
2
12TTS08
TJ = 125°C
0
0
2
4
6
8
10
12
14
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94380
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TTS08PbF Series
130
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
www.vishay.com
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
120
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
110
100
90
80
70
12TTS08
60
1
10
100
150
140
130
120
110
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRM Reapplied
100
90
80
70
60
12TTS08
50
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
12TTS08
100
TJ= 25°C
10
TJ= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
12TTS08
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 24-Aug-11
Document Number: 94380
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TTS08PbF Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
12
T
T
S
08
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current ratings (12 = 12.5 A)
3
-
Circuit configuration:
T = Single thyristor
4
-
Package:
T = TO-220
5
-
6
-
7
-
Type of silicon
S = Standard recovery rectifier
Voltage rating (08 = 800 V)
PbF = Lead (Pb)-free and RoHS compliant
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95222
Part marking information
www.vishay.com/doc?95225
Revision: 24-Aug-11
Document Number: 94380
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
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Document Number: 91000