VS-ST230SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 230 A FEATURES • Center amplifying gate • International standard case TO-209AB (TO-93) • Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200 V) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IT(AV) 230 A VDRM/VRRM 400 V, 1600 V VTM 1.55 V IGT 150 mA TJ -40 °C to 125 °C Package TO-209AB (TO-93) Diode variation Single SCR TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) I2t A TC 85 °C 360 A 50 Hz 5700 60 Hz 5970 50 Hz 163 60 Hz 149 VDRM/VRRM tq UNITS 230 IT(RMS) ITSM VALUES Typical TJ A kA2s 400 to 1600 V 100 μs -40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST230S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE TJ = TJ MAXIMUM V mA 04 400 08 800 900 12 1200 1300 16 1600 1700 500 30 Revision: 11-Mar-14 Document Number: 94399 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2t for fusing I2t °C 360 No voltage reapplied 5700 100 % VRRM reapplied 4800 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 5970 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 163 148 115 1630 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81 Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.55 VTM IH Maximum (typical) latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 105 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum holding current A 5000 Low level value of threshold voltage Maximum on-state voltage UNITS 230 DC at 78 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 11-Mar-14 Document Number: 94399 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 °C TJ = - 40 °C DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD A V 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 °C 180 - 90 150 40 - 2.9 - TJ = 25 °C 1.8 3.0 TJ = 125 °C 1.2 - TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = - 40 °C DC gate current required to trigger MAX. mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs DC operation 0.10 Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) °C K/W Mounting torque, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet N·m (lbf in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 94399 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series Vishay Semiconductors Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com 130 ST230S Series RthJC (DC) = 0.1 K/W 120 Ø 110 Conduction Angle 100 90 30° 90° 60° 120° 180° 80 0 50 100 150 200 250 Average On-State Current (A) 130 ST230S Series RthJC (DC) = 0.1 K/W 120 110 Ø Conduction Period 100 90 30° 80 90° 120° 70 0 100 DC 180° 200 300 400 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 8 W K/ ta el -D R 0.8 K /W 1.2 K/W 100 ST230S Series TJ = 125 °C 50 0. Conduction Angle = Ø 150 /W A hS RMS Limit 0.2 K 0.3 / W K/ W 0.4 K /W 0.5 K /W /W 200 0.1 6K Rt 250 180° 120° 90° 60° 30° 300 1K 0. Maximum Average On-State Power Loss (W) 60° 0 0 50 100 150 200 250 Average On-State Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 450 DC 180° 120° 90° 60° 30° 400 ST230S Series TJ = 125 °C 50 0.3 K /W 0.4 K /W 0.5 K /W 0.8 K / W R 100 /W ta Conduction Period 150 el Ø D RMS Limit 200 /W - 250 /W 0.2 K SA K 0.1 6K th /W 08 0. 300 0.1 K = 350 R Maximum Average On-State Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 1.2 K/W 0 0 50 100 150 200 250 300 350 Average On-State Current (A) 400 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 11-Mar-14 Document Number: 94399 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series Peak Half Sine Wave On-State Current (A) 5500 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 ST230S Series 2000 1 10 100 6000 5500 5000 4500 Maximum Non Repetitive Surge Current vs. Pulse Drain Duration. Control of Conduction May Not Be Maintained Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST230S Series 2000 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) Peak Half Sine Wave On-State Current (A) www.vishay.com 10 000 1000 TJ = 25 °C 100 TJ = 125 °C ST230S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-State Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.1 K/W (DC Operation) 0.1 0.01 ST230S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 11-Mar-14 Document Number: 94399 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dIF/dt : 20 V, 10 Ω; tr <=1 μs b) Recommended load line for < = 30 % rated dIF/dt : 10 V, 10 Ω tr < = 1 μs tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) (b) VGD IGD 0.1 0.001 TJ =-40 °C 1 TJ =25 °C TJ =125 °C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) Device: ST230S Series 0.01 (2) (3) (4) Frequency Limited by PG (AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 23 0 S 16 P 0 V PbF 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 3 - Thyristor Essential part number 4 - 0 = Converter grade 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4"-16UNF2A threads 8 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 9 - 10 - None = Standard production - PbF = Lead (Pb)-free V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95082 Revision: 11-Mar-14 Document Number: 94399 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) 7) MI N. 4 (0.16) MAX. 19 (0.75) MAX. (0. 3 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.0006 s.i.) Red cathode White gate Red shrink 38.5 (1.52) MAX. 16 (0.63) MAX. White shrink 220 (8.66) ± 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) ± 10 (0.39) 22 Flexible leads C.S. 25 mm2 (0.039 s.i.) ( 0. 86 )M 9.5 4.3 (0.17) DIA. IN . Glass metal seal Fast-on terminals AMP. 280000-1 REF-250 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. 19 (0.75) MAX. )M IN . 4 (0.16) MAX. 37 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.006 s.i.) Red cathode White gate White shrink 16 (0.63) MAX. 38.5 (1.52) MAX. Red shrink . IN (0. 22 220 (8.66) ± 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) ± 10 (0.39) Flexible leads C.S. 25 mm2 (0.039 s.i.) 86 9.5 (0. 4.3 (0.17) DIA. )M Ceramic housing 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. Note (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Revision: 05-Mar-12 Document Number: 95082 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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