VS-ST230SPbF Series Datasheet

VS-ST230SPbF Series
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Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to
1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-209AB (TO-93)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
IT(AV)
230 A
VDRM/VRRM
400 V, 1600 V
VTM
1.55 V
IGT
150 mA
TJ
-40 °C to 125 °C
Package
TO-209AB (TO-93)
Diode variation
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers




MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
I2t
A
TC
85
°C
360
A
50 Hz
5700
60 Hz
5970
50 Hz
163
60 Hz
149
VDRM/VRRM
tq
UNITS
230
IT(RMS)
ITSM
VALUES
Typical
TJ
A
kA2s
400 to 1600
V
100
μs
-40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST230S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
TJ = TJ MAXIMUM
V
mA
04
400
08
800
900
12
1200
1300
16
1600
1700
500
30
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VS-ST230SPbF Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum I2t for fusing
I2t
°C
360
No voltage
reapplied
5700
100 % VRRM
reapplied
4800
t = 10 ms
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
5970
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM 
reapplied
163
148
115
1630
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.92
VT(TO)2
(I >  x IT(AV)), TJ = TJ maximum
0.98
Low level value of on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.88
High level value of on-state slope resistance
rt2
(I >  x IT(AV)), TJ = TJ maximum
0.81
Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.55
VTM
IH
Maximum (typical) latching current
IL
TJ = 25 °C, anode supply 12 V resistive load
kA2s
105
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum holding current
A
5000
Low level value of threshold voltage
Maximum on-state voltage
UNITS
230
DC at 78 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000 (300)
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
VALUES
UNITS
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and 
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA
Revision: 11-Mar-14
Document Number: 94399
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VS-ST230SPbF Series
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
VALUES
TEST CONDITIONS
TYP.
TJ = TJ maximum, tp  5 ms
10.0
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp  5 ms
3.0
IGT
TJ = 25 °C
TJ = - 40 °C
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
A
V
5.0
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
TJ = 125 °C
180
-
90
150
40
-
2.9
-
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.2
-
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
UNITS
W
20
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
DC gate current required to trigger
MAX.
mA
V
10
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction 
temperature range
TEST CONDITIONS
TJ
-40 to 125
Maximum storage temperature range
TStg
-40 to 150
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
case to heatsink
RthC-hs
DC operation
0.10
Mounting surface, smooth, flat and greased
0.04
Non-lubricated threads
31
(275)
Lubricated threads
24.5
(210)
°C
K/W
Mounting torque, ± 10 %
Approximate weight
280
Case style
See dimensions - link at the end of datasheet
N·m
(lbf in)
g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
60°
0.036
0.037
30°
0.060
0.060
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 94399
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VS-ST230SPbF Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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130
ST230S Series
RthJC (DC) = 0.1 K/W
120
Ø
110
Conduction Angle
100
90
30°
90°
60°
120°
180°
80
0
50
100
150
200
250
Average On-State Current (A)
130
ST230S Series
RthJC (DC) = 0.1 K/W
120
110
Ø
Conduction Period
100
90
30°
80
90°
120°
70
0
100
DC
180°
200
300
400
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
8
W
K/
ta
el
-D
R
0.8 K
/W
1.2 K/W
100
ST230S Series
TJ = 125 °C
50
0.
Conduction Angle
=
Ø
150
/W
A
hS
RMS Limit
0.2
K
0.3 / W
K/
W
0.4
K /W
0.5
K /W
/W
200
0.1
6K
Rt
250
180°
120°
90°
60°
30°
300
1K
0.
Maximum Average On-State Power Loss (W)
60°
0
0
50
100
150
200
250
Average On-State Current (A)
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
450
DC
180°
120°
90°
60°
30°
400
ST230S Series
TJ = 125 °C
50
0.3
K /W
0.4
K /W
0.5 K
/W
0.8 K / W
R
100
/W
ta
Conduction Period
150
el
Ø
D
RMS Limit
200
/W
-
250
/W
0.2
K
SA
K
0.1
6K
th
/W
08
0.
300
0.1
K
=
350
R
Maximum Average On-State Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
1.2 K/W
0
0
50
100
150
200
250
300
350
Average On-State Current (A)
400
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 11-Mar-14
Document Number: 94399
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VS-ST230SPbF Series
Peak Half Sine Wave On-State Current (A)
5500
Vishay Semiconductors
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
5000
4500
4000
3500
3000
2500
ST230S Series
2000
1
10
100
6000
5500
5000
4500
Maximum Non Repetitive Surge Current
vs. Pulse Drain Duration.
Control of Conduction May Not Be Maintained
Initial TJ = 125 °C
No Voltage Reapplied
Rated VRRM Reapplied
4000
3500
3000
2500
ST230S Series
2000
0.01
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
Peak Half Sine Wave On-State Current (A)
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10 000
1000
TJ = 25 °C
100
TJ = 125 °C
ST230S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-State Voltage (V)
Transient Thermal Impedance ZthJC (K/W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
RthJC = 0.1 K/W
(DC Operation)
0.1
0.01
ST230S Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 11-Mar-14
Document Number: 94399
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VS-ST230SPbF Series
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10
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
Rectangular gate pulse
a) Recommended load line for
rated dIF/dt : 20 V, 10 Ω; tr <=1 μs
b) Recommended load line for
< = 30 % rated dIF/dt : 10 V, 10 Ω
tr < = 1 μs
tp = 4 ms
tp = 2 ms
tp = 1 ms
tp = 0.66 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ =-40 °C
1
TJ =25 °C
TJ =125 °C
Instantaneous Gate Voltage (V)
100
Vishay Semiconductors
(1)
Device: ST230S Series
0.01
(2)
(3) (4)
Frequency Limited by PG (AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
23
0
S
16
P
0
V
PbF
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
3
-
Thyristor
Essential part number
4
-
0 = Converter grade
5
-
S = Compression bonding stud
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
P = Stud base 3/4"-16UNF2A threads
8
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
9
-
10
-
None = Standard production
-
PbF = Lead (Pb)-free
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
Note: For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95082
Revision: 11-Mar-14
Document Number: 94399
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Outline Dimensions
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Vishay Semiconductors
TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
7)
MI
N.
4 (0.16) MAX.
19 (0.75) MAX.
(0.
3
8.5 (0.33) DIA.
C.S. 0.4 mm2
(0.0006 s.i.)
Red cathode
White gate
Red shrink
38.5 (1.52)
MAX.
16 (0.63) MAX.
White shrink
220 (8.66) ± 10 (0.39)
Red silicon rubber
90 (3.54) MIN.
210 (8.26) ± 10 (0.39)
22
Flexible leads
C.S. 25 mm2
(0.039 s.i.)
( 0.
86
)M
9.5
4.3 (0.17) DIA.
IN
.
Glass metal seal
Fast-on terminals
AMP. 280000-1
REF-250
28.5 (1.12) MAX. DIA.
27.5 (1.08) MAX.
SW 32
3/4"-16UNF-2A (1)
35 (1.38) MAX.
19 (0.75) MAX.
)M
IN
.
4 (0.16) MAX.
37
8.5 (0.33) DIA.
C.S. 0.4 mm2
(0.006 s.i.)
Red cathode
White gate
White shrink
16 (0.63) MAX.
38.5 (1.52)
MAX.
Red shrink
.
IN
(0.
22
220 (8.66) ± 10 (0.39)
Red silicon rubber
90 (3.54) MIN.
210 (8.26) ± 10 (0.39)
Flexible leads
C.S. 25 mm2
(0.039 s.i.)
86
9.5
(0.
4.3 (0.17) DIA.
)M
Ceramic housing
27.5 (1.08) MAX. DIA.
27.5 (1.08) MAX.
SW 32
3/4"-16UNF-2A (1)
35 (1.38) MAX.
Note
(1) For metric device: M16 x 1.5 - length 21 (0.83) maximum
Revision: 05-Mar-12
Document Number: 95082
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