SST100S Phase Control Thyristors STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Center amplifying gate 1). DC motor controls 2). Hermetic metal case with ceramic insulator 2). Controlled DC power supplies (Also available with glass-metal seal up to 1200V) 3). AC controllers 3). International standard case TO-209AB (TO-94) 4). Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 5). Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling MAJOR RATINGS AND CHARACTERISTICS Parameters IF(AV) SST100S Unit 100 A 85 ℃ 360 A @ 50Hz 5700 A @ 60Hz 5970 A @ 50Hz 163 KA2s @ 60Hz 149 KA2s 400 to 1600 V 100 μs 40 to 125 ℃ @ TC IF(RMS) IFSM I2t VDRM/VRRM Tq typical TJ ELECTRICAL SPECIFICATIONS 1). Voltage Ratings Type number SST100S www.china-liujing.com VDRM/VRRM, maximum repetitive peak reverse voltage VRSM, maximum nonrepetitive peak reverse voltage IDRM/IRRM max. @ TJ = TJ max V V mA 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 Voltage Code 30 1/6 SST100S 2). Forward Conduction SST100S Unit Max. average forward current 100 A @ Case temperature 85 ℃ 360 A Parameters IT(AV) IT(RMS) Max. RMS forward current I2t t = 8.3ms reapplied t = 10ms 100% VRRM 5000 t = 8.3ms reapplied Sinusoidal half wave, 163 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 5970 non-repetitive surge current 4800 148 115 A KA2s 105 2 I √t 2 Maximum I √t for fusing 1630 VT(TO)1 Low level value of threshold voltage 0.92 VT(TO)2 High level value of threshold voltage 0.98 rt1 Low level value of forward slope resistance 0.88 rt2 High level value of forward slope resistance 0.81 VTM Max. forward voltage drop 1.55 IH Maximum holding current 600 IL Typical latching current di/dt td Max. non-repetitive rate of rise of turned-on current Typical delay time 1000 (300) 1000 2 KA √s t = 0.1 to 10ms, no voltage reapplied V mΩ dv/dt Typical turn-off time Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current www.china-liujing.com (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. V Ipk= 300A, TJ = TJ max, tp = 10ms sine pulse mA TJ = 25℃, anode supply 12V resistive load A/μs Gate drive 20V, 20Ω, tr ≤ 1μs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/μs 1.0 μs tq DC @ 78℃ case temperature No voltage Max. peak, one-cycle forward, Maximum I2t for fusing 180° conduction, half sine wave t = 10ms 5700 ITSM Conditions Vd = 0.67% V , T = 25℃VDRM, TJ =25℃ ITM = 175A, TJ = TJ max, di/dt = 20A/μs, VR = 50V 100 dv/dt = 20V/μs, Gate 0V 100Ω, tp = 500μs 500 V/μs TJ = TJ max. linear to 80% rated VDRM 30 mA TJ = TJ max. rated VDRM/VRRM applied 2/6 SST100S 3). Triggering Parameters PGM SST100S Maximum peak gate power 10.0 PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Max. peak positive gate current 20 -VGM Maximum peak positive gate voltage 5.0 IGT VGT IGD Unit DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger TYP. MAX. 180 - 90 150 40 Conditions W TJ = TJ max, tp ≤ 5ms A TJ = TJ max, f = 50Hz, d% = 50 V TJ = TJ max, tp ≤ 5ms mA TJ = - 40℃ TJ = 25℃ Max. required gate trigger - TJ = 125℃ current/voltage are the 2.9 - TJ = - 40℃ 1.8 3.0 1.2 - V TJ = 25℃ DC gate voltage not to trigger will trigger all units 6V anode-to-cathode applied TJ = 125℃ Max. gate current/ voltage mA 10 not to trigger is the max. TJ = TJ max. VGD lowest value which any unit with rated V DRM V 0.25 value which. will not trigger anode-to-cathode applied TJ Max. operating temperature range -40 to 125 ℃ Tstg Max. storage temperature range -40 to 150 ℃ RthJC Max. thermal resistance, junction to case 0.105 K/W DC operation RthCS Max. thermal resistance, case to heatsink 0.04 K/W Mounting surface, smooth, flat and greased 31 (275) Nm Non lubricated threads T Mounting torque wt Approximate weight 24.5 (210) (lbf-in) Lubricated threads g 280 Case style See Outline Table TO-94 ΔRthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 www.china-liujing.com Units Conditions K/W TJ = TJ max. 3/6 SST100S Maximum Allowable Case Temperature (°C) 130 RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 90 80 30° 0 50 100 60° 150 90° 200 120° 180° 250 300 130 RthJC (DC) = 0.105 K/ W 120 110 Conduction Period 100 90 30° 80 70 0 60° 90° 120° 180° DC 50 100 150 200 250 300 350 400 450 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 K/ W 0. 25 K/ W 0.3 K/ W 0.4 K/ W R 0.6 K/ W 0.8 K /W 1.2 K /W TJ = 125°C 50 0 ta el -D Conduc tion Angle 100 W K/ RMSLimit 150 1 0. 200 K/ W = 250 0. 16 0. 2 SA 180° 120° 90° 60° 30° 300 h R t Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) PERFORMANCE CURVES FIGURE 0 50 100 150 200 250 300 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 500 -D ta el R 0.6 K /W 100 TJ = 125°C 50 0 W K/ Conduction Period 150 03 0. 250 200 RMS Limit = 300 W K/ 350 0. 08 K/ W 0. 12 K/ W 0. 16 K/ W 0.2 K/ W 0.3 K/ W 0.4 K/ W SA 400 h R t DC 180° 120° 90° 60° 30° 450 06 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 0 1 K/ W 50 100 150 200 250 300 350 400 450 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.china-liujing.com Pea k Half Sine Wave On-sta te Current (A) Peak Half Sine Wave On-state Current (A) Fig. 4 - On-state Power Loss Characteristics 7000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current 4/6 SST100S Instantaneous On-state Current (A) 10000 TJ= 25°C TJ = 125°C 1000 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-state Voltage Drop Characteristics 1 Steady State Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Rectangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 µs (b) VGD (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (1) IGD 0.1 0.001 0.01 tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (2) (3) (4) Frequenc y Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.china-liujing.com 5/6 SST100S OUTLINE Case Style TO-94 E-mail: [email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. 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