VS-ST380CH Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 960 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (E-PUK) RoHS COMPLIANT • Extended temperature range • Low profile hockey PUK to increase current-carrying capability TO-200AB (E-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AB (E-PUK) Diode variation Single SCR IT(AV) 960 A VDRM/VRRM 400 V, 600 V VTM 1.58 V IGT 100 mA TJ -40 °C to 150 °C TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM VALUES UNITS 960 A 80 °C 2220 A 25 °C 50 Hz 12 500 60 Hz 13 000 50 Hz 782 60 Hz 713 A I2t VDRM/VRRM tq Typical TJ kA2s 400 to 600 V 100 µs -40 to 150 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST380CH..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 06 600 700 VRSM, MAXIMUM IDRM/IRRM MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ V MAXIMUM mA 100 Revision: 20-Dec-13 Document Number: 94411 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST380CH Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t VALUES 960 (440) A 80 (110) °C 2220 12 500 No voltage reapplied 13 000 100 % VRRM reapplied 11 000 No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 782 713 553 t = 0.1 to 10 ms, no voltage reapplied 7820 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.85 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.88 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.25 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.24 Ipk = 2900 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.58 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 505 VT(TO)1 Maximum on-state voltage A 10 500 Low level value of threshold voltage Maximum holding current UNITS 600 1000 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 Ω, tr ≤ 1 μs TJ = TJ maximum, anode voltage ≤ 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 20-Dec-13 Document Number: 94411 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST380CH Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM IGT DC gate current required to trigger 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp ≤ 5 ms 3.0 200 - TJ = 25 °C 100 200 TJ = 25 °C IGD TJ = TJ maximum VGD DC gate voltage not to trigger V TJ = -40 °C TJ = 150 °C DC gate current not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp ≤ 5 ms TJ = 150 °C VGT MAX. TYP. TJ = TJ maximum, tp ≤ 5 ms TJ = -40 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 40 - 2.5 - 1.8 3.0 1.0 - mA V 10 mA 0.25 V VALUES UNITS -40 to 150 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ TStg RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 0.01 DC operation double side cooled Mounting force, ± 10 % Approximate weight Case style K/W See dimensions - link at the end of datasheet 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 20-Dec-13 Document Number: 94411 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST380CH Series 150 Vishay Semiconductors ST380CH..C Series (Single Side Cooled) RthJ-hs (DC) = 0.09 K/ W 140 130 120 110 Conduc tion Angle 100 90 30° 80 60° 90° 70 120° 60 180° 50 40 0 100 200 300 400 500 600 700 800 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 150 ST380CH..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 140 130 120 110 100 90 Conduc tion Period 80 70 30° 60 60° 50 90° 120° 40 30 180° DC 20 0 Average On-state Current (A) Conduc tion Period 80 70 60 50 40 30° 30 60° 90° 120° 180° DC 20 0 200 400 600 800 1000 1200 1400 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 120 110 100 90 180° 120° 90° 60° 30° 2000 90 Conduction Angle 80 70 30° 60 50 60° 90° 120° 40 30 180° 20 0 400 800 1200 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics RMS Limit 1500 1000 Conduction Angle 500 ST380CH..C Series TJ = 150°C 0 0 400 800 1200 1600 Average On-state Current (A) 1600 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) 120 110 100 2500 Fig. 5 - On-State Power Loss Characteristics ST380CH..C Series (Double Side Cooled) RthJ-hs (DC) = 0.04 K/ W 140 130 2000 2500 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 150 1500 Fig. 4 - Current Ratings Characteristics ST380CH..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/ W 140 130 1000 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 150 500 3500 DC 180° 120° 90° 60° 30° 3000 2500 2000 RMS Limit 1500 Conduc tion Period 1000 ST380CH..C Series TJ = 150°C 500 0 0 500 1000 1500 2000 2500 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 20-Dec-13 Document Number: 94411 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST380CH Series 12000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150°C @60 Hz 0.0083 s @50 Hz 0.0100 s 11000 10000 9000 8000 7000 ST380CH..C Series 6000 5000 1 10 100 13000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 12000 Of Conduc tion May Not Be Maintained. Initial TJ = 150°C 11000 No Voltage Reapplied Rated VRRM Reapplied 10000 9000 8000 7000 ST380CH..C Series 6000 5000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 TJ = 25°C TJ = 150°C 1000 ST380CH..C Series 100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedanc e ZthJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 ST380CH..C Series Steady State Value 0.01 R thJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 20-Dec-13 Document Number: 94411 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST380CH Series www.vishay.com Vishay Semiconductors Rec tangular gate pulse a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for (1) PGM = 10W, tp (2) PGM = 20W, tp (3) PGM = 40W, tp (4) PGM = 60W, tp <=30% ra ted d i/ dt : 10V, 10ohms 10 = 4ms = 2ms = 1ms = 0.66ms (a) tr<=1 µs (b) VGD IGD 0.1 0.001 Tj=-40 °C 1 Tj=25 °C Tj=150 °C Instantaneous Gate Voltage (V) 100 Device: ST380CH..C Series 0.01 (2) (1) 0.1 (3) (4) Frequency Limited by PG(AV) 1 10 100 Insta ntaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 38 0 CH 06 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - CH = Ceramic PUK, high temperature 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (E-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/µs (standard selection) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95075 Revision: 20-Dec-13 Document Number: 94411 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000