VS-ST300C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 650 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case TO-200AB (E-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls TO-200AB (E-PUK) • Controlled DC power supplies PRODUCT SUMMARY • AC controllers Package TO-200AB (E-PUK) Diode variation Single SCR IT(AV) 650 A VDRM/VRRM 400 V to 2000 V VTM 2.18 V IGT 100 mA TJ -40 °C to 125 °C MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 1290 A 25 °C 8000 60 Hz 8380 50 Hz 320 60 Hz 292 Typical TJ UNITS 650 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 µs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST300C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 50 Revision: 25-Nov-13 Document Number: 94403 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES UNITS 650 (320) A 55 (75) °C 1290 8000 No voltage reapplied 8380 100 % VRRM reapplied 7040 No voltage reapplied 6730 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 320 292 226 3200 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73 Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 Maximum on-state voltage VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 207 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum holding current A 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 μs TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/μs, VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA Revision: 25-Nov-13 Document Number: 94403 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM IGT DC gate current required to trigger 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = - 40 °C 200 - 100 200 TJ = 25 °C IGD TJ = TJ maximum VGD DC gate voltage not to trigger V TJ = 25 °C TJ = 125 °C DC gate current not to trigger A 5.0 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 20 TJ = TJ maximum, tp 5 ms TJ = 125 °C VGT TYP. MAX. TJ = TJ maximum, tp 5 ms TJ = - 40 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 50 - 2.5 - 1.8 3.0 1.1 - mA V 10.0 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 K/W 0.01 DC operation double side cooled Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 25-Nov-13 Document Number: 94403 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300C Series 130 Vishay Semiconductors ST300C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/W 120 110 100 90 Conduction Angle 80 70 30° 60 60° 90° 50 120° 180° 40 30 0 100 200 300 400 500 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 90 80 Conduction Period 70 60 50 30° 60° 90° 120° 40 30 180° 20 0 200 400 DC 600 800 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST300C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/W 100 100 90 Conduction Period 80 30° 70 60 60° 90° 50 120° 40 180° 30 DC 20 0 1600 180° 120° 90° 60° 30° 1400 1200 1000 RMS Limit 800 600 400 Conduction Angle 200 ST300C..C Series T J = 125 °C 0 0 Fig. 5 - On-State Power Loss Characteristics ST300C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.04 K/W Conduction Angle 60° 90° 120° 180° 0 200 400 600 800 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 1000 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Fig. 2 - Current Ratings Characteristics 30° 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 200 400 600 800 1000 1200 1400 Fig. 4 - Current Ratings Characteristics 130 110 ST300C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.04 K/W 120 110 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 120 130 1800 DC 180° 120° 90° 60° 30° 1600 1400 1200 1000 RMS Limit 800 600 Conduction Period 400 ST300C..C Series T J = 125 °C 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 25-Nov-13 Document Number: 94403 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300C Series 7500 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6500 6000 5500 5000 4500 4000 3500 ST300C..C Series 3000 1 10 100 8000 7500 7000 6500 6000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125 °C No Voltage Reapplied Rated VRRM Reapplied 5500 5000 4500 4000 3500 ST300C..C Series 3000 0.01 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T = 25°C J TJ = 125°C 1000 ST300C..C Series 100 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristcs 0.1 Steady State Value R thJ-hs = 0.09 K/W (Single Side Cooled) R thJ-hs = 0.04 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 ST300C..C Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 25-Nov-13 Document Number: 94403 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST300C Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 μs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 μs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD 0.1 0.001 Tj=-40°C 1 Tj=25°C Tj=125°C Instantaneous Gate Voltage (V) 100 (1) Device: ST300C..C Series 0.01 (2) (3) (4) Frequency Limited by PG(AV) 0.1 1 Instantaneous Gate Current (A) 10 100 Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 30 0 C 20 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = Converter grade 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AB (E-PUK) 8 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/μs (standard value) L = 1000 V/μs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95075 Revision: 25-Nov-13 Document Number: 94403 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25° ± 5° 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000