VS-ST303CL Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Hockey PUK Version), 515 A FEATURES • Metal case with ceramic insulator • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt • International standard case TO-200AC (B-PUK) • High surge current capability • Low thermal impedance • High speed performance TO-200AC (B-PUK) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-200AC (B-PUK) Diode variation Single SCR IT(AV) 515 A VDRM/VRRM 400 V, 800 V, 1000 V, 1200 V VTM 2.16 V • Induction heating ITSM at 50 Hz 7950 A • All types of force-commutated converters ITSM at 60 Hz 8320 A IGT 200 mA TC/Ths 55 °C TYPICAL APPLICATIONS • Inverters • Choppers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2t TEST CONDITIONS Ths Ths A 55 °C 995 A 25 °C 7950 60 Hz 8320 50 Hz 316 60 Hz 289 400 to 1200 Range TJ UNITS 515 50 Hz VDRM/VRRM tq VALUES A kA2s V 10 to 30 μs -40 to 125 °C Note • tq = 10 μs to 20 μs for 400 V to 800 V devices tq = 15 μs to 30 μs for 1000 V to 1200 V devices Revision: 15-Apr-14 Document Number: 94374 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 VS-ST303C..L IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 1130 950 1800 1540 5660 4990 400 Hz 1010 820 1850 1570 2830 2420 1000 Hz 680 530 1560 1300 1490 1220 2500 Hz 230 140 690 510 540 Recovery voltage VR Voltage before turn-on VD Rise of on-state current dI/dt Heatsink temperature 50 50 VDRM VDRM VDRM 50 Equivalent values for RC circuit 55 10/0.47 V - 40 55 A/μs 40 10/0.47 A 390 50 40 UNITS 55 °C Ω/μF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave double side (single side) cooled DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied UNITS A 55 (85) °C 995 7950 No voltage reapplied 100 % VRRM reapplied VALUES 515 (190) 8320 A 6690 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 7000 316 289 224 kA2s 204 Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 Maximum peak on-state voltage VTM ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.16 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.44 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.48 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.57 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.56 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 kA2√s V mΩ mA Revision: 15-Apr-14 Document Number: 94374 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current UNITS 1000 A/μs td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 Ω source 0.83 tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code dI/dt Typical delay time Maximum turn-off time (1) VALUES TJ = TJ maximum, VDRM = rated VDRM ITM = 2 x dI/dt minimum maximum TEST CONDITIONS 10 μs 30 Note (1) t = 10 μs to 20 μs for 400 V to 800 V devices; t = 15 μs to 30 μs for 1000 V to 1200 V devices q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power PGM PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp ≤ 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink SYMBOL TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled DC operation double side cooled 0.05 0.011 DC operation double side cooled 0.005 Approximate weight Case style 0.11 DC operation single side cooled Mounting force, ± 10 % See dimensions - link at the end of datasheet °C K/W 9800 (1000) N (kg) 250 g TO-200AC (B-PUK) Revision: 15-Apr-14 Document Number: 94374 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors ΔRthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION Single Side Double Side Single Side Double Side 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 TEST CONDITIONS UNITS TJ = TJ maximum K/W 130 ST303C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.11 K/ W 120 110 100 90 Conduction Angle 80 30° 60° 70 90° 120° 60 180° 50 40 0 50 100 150 200 250 300 350 Maximum Allowable Heatsink Temp erature (°C) Maximum Allowable Heatsink Temperature (°C) Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST303C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.05 K/ W 120 110 100 90 Conduc tion Angle 80 70 60 30° 120° 30 0 90 Conduction Period 70 60 30° 50 60° 40 90° 120° 30 180° 20 0 100 200 300 400 DC 500 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 100 80 100 200 300 400 500 600 700 Fig. 3 - Current Ratings Characteristics ST303C..L Series (Single Side Cooled) RthJ-hs(DC) = 0.11 K/ W 110 180° Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 120 90° 40 Average On-state Current (A) 130 60° 50 130 ST303C..L Series (Double Side Cooled) RthJ-hs(DC) = 0.05 K/ W 120 110 100 90 Conduc tion Period 80 70 30° 60 60° 90° 50 120° 180° 40 30 DC 20 0 200 400 600 800 1000 1200 Average On-state Current (A) Fig. 4 - Current Ratings Characteristics Revision: 15-Apr-14 Document Number: 94374 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series Vishay Semiconductors 2000 1400 180° 120° 90° 60° 30° 1200 RMS Limit 1800 1600 1000 800 Conduction Angle 600 400 ST303C..L Series TJ = 125°C 200 0 0 8000 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) www.vishay.com Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 7000 Initial TJ = 125°C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 7500 5500 5000 4500 4000 3500 ST303C..L Series 3000 0.01 100 200 300 400 500 600 700 800 0.1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2600 10000 DC 180° 120° 90° 60° 30° 2400 2200 2000 1800 1600 1400 1200 RMSLimit 1000 Conduction Period 800 600 ST303C..L Series TJ = 125°C 400 200 Instantaneous On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 5 - On-State Power Loss Characteristics 1000 TJ = 25°C TJ = 125°C ST303C..L Series 0 100 0 200 400 600 800 1000 1200 0 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST303C..L Series 3500 3000 1 10 2 3 4 5 6 7 8 100 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJ-hs (K/ W) Fig. 6 - On-state Power Loss Characteristics 7000 1 Instantaneous On-state Voltage (V) Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 1 Pulse Train Duration (s) Average On-state Current (A) 1 Steady State Value RthJ-hs = 0.11 K/ W (Single Side Cooled) 0.1 RthJ-hs = 0.05 K/ W (Double Side Cooled) (DC Operation) 0.01 ST303C..L Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 15-Apr-14 Document Number: 94374 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors 300 ITM = 1000 A 280 500 A 260 300 A 200 A 240 100 A 220 200 180 160 140 ST303C..L Series TJ = 125 °C 120 100 80 10 20 30 40 50 180 I = 1000 A 170 TM 160 500 A 150 300 A 140 200 A 130 100 A 120 110 100 90 80 70 ST303C..L Series 60 TJ = 125 °C 50 40 30 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Charge - Qrr (µC) 320 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Peak On-state Current (A) 1E4 1000 200 500 400 100 50 Hz 1000 1500 2000 2500 3000 1E2 1E1 1E2 1E3 1E Snubber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 ST303C..L Series Sinusoida l pulse TC = 40°C tp 100 50 Hz 400 200 1500 Snub ber circ uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1E3 500 ST303C..L Series Sinusoidal pulse TC = 55°C 3000 tp 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Peak On-state Current (A) 1E4 Snub b er c ircuit R = 10 ohms s C = 0.47 µF s V = 80% V DRM D 500 1E3 50 Hz 400 200 100 Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 1000 1000 1500 500 400 200 100 50 Hz 1500 2000 2000 2500 2500 1E2 3000 ST303C..L Series Trap ezoid al p ulse TC = 40°C d i/ d t = 50A/ µs tp 1E1 1E1 1E2 1E3 1E4 ST303C..L Series Tra pezoida l pulse TC = 55°C d i/d t = 50A/µs 3000 tp 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Frequency Characteristics Revision: 15-Apr-14 Document Number: 94374 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors Peak On-state Current (A) 1E4 Snub ber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM Snub b er circ uit Rs = 10 ohms Cs = 0.47 µF VD = 80% V DRM 1E3 500 1000 400 200 50 Hz 100 500 50 Hz 1000 1500 1500 2000 2000 2500 1E2 200 100 400 2500 3000 tp 1E1 1E1 1E2 3000 ST303C..L Series Tra pezoid al p ulse TC = 40°C di/ d t = 100A/ µs 1E3 ST303C..L Series Tra pezoida l p ulse TC = 55°C di/ dt = 100A/ µs tp 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 15 - Frequency Characteristics 1E5 Peak On-state Current (A) ST303C..L Series Rec tangular pulse tp 1E4 d i/d t = 50A/ µs 20 joules p er p ulse 2 3 5 20 joules p er p ulse 10 10 5 3 1 1E3 2 0.5 1 0.4 0.5 1E2 0.4 tp 1E1 1E1 ST303C..L Series Sinusoid al p ulse 1E2 1E3 1E1 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30%rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=-40 °C 1 Tj=25 °C Tj=125 °C InstantaneousGate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST303C..LSeries Frequency Limited by PG(AV) 0.01 0.1 1 10 100 InstantaneousGate Current (A) Fig. 17 - Gate Characteristics Revision: 15-Apr-14 Document Number: 94374 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST303CL Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 30 3 C 12 L H K 1 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - C = Ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case TO-200AC (B-PUK) 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = Eyelet terminals 15 CL tq (µs) 18 CP DP (gate and auxiliary cathode unsoldered leads) 20 CK DK EK FK* HK only for 1 = Fast-on terminals 1000 V/1200 V 25 CJ DJ EJ FJ* HJ 30 - DH EH FH HH (gate and auxiliary cathode unsoldered leads) * Standard part number. 2 = Eyelet terminals All other types available only on request. (gate and auxiliary cathode soldered leads) dV/dt - tq combinations available dV/dt (V/µs) 10 tq (µs) 12 up to 800 V 15 20 20 CN CM CL CK 50 DN DM DL DK 100 EN EM EL EK 200 FN* FM FL* FK* 400 HN HM HL HK 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95076 Revision: 15-Apr-14 Document Number: 94374 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-200AC (B-PUK) DIMENSIONS in millimeters (inches) Creepage distance: 36.33 (1.430) minimum Strike distance: 17.43 (0.686) minimum 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 places 27 (1.06) MAX. Pin receptacle AMP. 60598-1 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. 20° ± 5° 58.5 (2.3) DIA. MAX. 4.7 (0.18) 36.5 (1.44) 2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95076 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000