Bulletin I25169 rev. C 04/00 ST380CH..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 960A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK) Low profile hockey-puk to increase current-carrying capability Extended temperature range Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (E-PUK) Major Ratings and Characteristics Parameters ST380CH..C Units 960 A 80 °C 2220 A 25 °C @ 50Hz 12500 A @ 60Hz 13000 A @ 50Hz 782 KA2s @ 60Hz 713 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 I t V DRM/V RRM tq typical TJ www.irf.com 400 to 600 V 100 µs - 40 to 150 °C 1 ST380CH..C Series Bulletin I25169 rev. C 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 04 400 500 06 600 700 Type number ST380CH..C 100 On-state Conduction Parameter I T(AV) ST380CH..C Units Conditions Max. average on-state current 960 (440) A 180° conduction, half sine wave @ Heatsink temperature 80 (110) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 2220 I TSM Max. peak, one-cycle 12500 non-repetitive surge current 13000 DC @ 25°C heatsink temperature double side cooled t = 10ms A 10500 I 2t Maximum I2t for fusing V T(TO) 1 Low level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 713 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 7820 KA2s voltage r t1 Low level value of on-state High level value of on-state t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V (I > π x IT(AV)),TJ = TJ max. 0.88 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.25 slope resistance r t2 KA2√s 0.85 voltage V T(TO) 2 High level value of threshold 100% VRRM 782 505 Maximum I2√t for fusing reapplied t = 10ms 11000 553 I 2√ t No voltage t = 8.3ms mΩ (I > π x IT(AV)),TJ = TJ max. 0.24 slope resistance V TM Max. on-state voltage 1.58 IH Maximum holding current 600 IL Typical latching current 1000 V I = 2900A, TJ = TJ max, t = 10ms sine pulse mA T J = 25° C, anode supply 12V resistive load pk p Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d Typical delay time ST380CH..C 1000 Units Conditions A/µs 2 Typical turn-off time 100 r TJ = T J max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs g 1.0 µs tq Gate drive 20V, 20Ω, t ≤ 1µs V = 0.67% VDRM, TJ = 25°C d ITM = 550A, TJ = T J max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs p www.irf.com ST380CH..C Series Bulletin I25169 rev. C 04/00 Blocking Parameter ST380CH..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 100 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST380CH..C Maximum peak gate power 10.0 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT to trigger IGD VGD A T J = TJ max, t ≤ 5ms V TJ = TJ max, tp ≤ 5ms - 100 200 40 - 2.5 - 1.8 3.0 1.0 - DC gate current not to trigger DC gate voltage not to trigger p MAX. 200 T J = - 40°C DC gate current required DC gate voltage required p 5.0 TYP. to trigger T J = TJ max, t ≤ 5ms T J = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 2.0 gate voltage -VGM Units Conditions 10 0.25 mA T J = 25°C T J = 150°C T J = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied T J = 25°C T J = 150°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST380CH..C TJ Max. operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F wt Mounting force, ± 10% Approximate weight Case style www.irf.com Units °C 0.09 0.04 0.02 0.01 Conditions DC operation single side cooled K/W K/W 9800 N (1000) (Kg) 83 g TO - 200AB (E-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table 3 ST380CH..C Series Bulletin I25169 rev. C 04/00 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 38 0 CH 06 C 1 1 2 3 4 5 6 7 1 - Thyristor 2 - Essential part number 8 3 - 0 = Converter grade 4 - CH = Ceramic Puk, High temperature 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST380CH..C Series Bulletin I25169 rev. C 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) 0.3 (0.01) MIN. DIA. MAX. 14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 40.5 (1.59) DIA. MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) Case Style TO-200AB (E-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 25°± 5° 42 (1.65) MAX. 15 0 ST 3 8 0 C H ..C S e rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K /W 14 0 13 0 12 0 11 0 Co n duc tio n Ang le 10 0 90 3 0° 80 60° 90° 70 1 20° 60 18 0° 50 40 0 10 0 20 0 3 0 0 4 0 0 5 00 60 0 70 0 80 0 M a xim u m A llo w a b le H e at sin k T e m p e ra t ure (°C ) M a xim u m A llo w ab le H e at sin k T e m p e ra t u re (°C ) 28 (1.10) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 ST 3 8 0 C H..C Se rie s (Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W C on duc tio n Pe rio d 30° 60° 90° 120° 0 200 40 0 600 180° DC 8 00 10 0 0 1 20 0 1 4 00 A v e ra g e O n - st a t e C u rre n t (A ) A v e ra g e O n -st a te C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST380CH..C Series 150 140 130 120 110 100 90 80 70 60 50 40 30 20 ST380CH..C Series (Double Sid e Cooled) R th J- hs (DC) = 0.04 K/W C o nduc tio n A ng le 30° 60° 90° 120° 180° 0 400 800 1200 1600 M a xim u m A llo w a b le H e a ts in k T e m p e r at u re (° C ) Maximum Allowable Heatsin k Tem perature (°C) Bulletin I25169 rev. C 04/00 1 50 1 40 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 ST 3 8 0 C H..C Se rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 4 K / W C o nduc tio n Pe riod 30° 60° 90 ° 120° DC 0 500 1 0 00 C on duc tio n Ang le 5 00 S T3 8 0 C H ..C S e rie s T J = 1 5 0 °C 0 0 40 0 8 00 1200 2 0 00 2 50 0 3 50 0 DC 180 ° 120 ° 90 ° 60 ° 30 ° 3 00 0 2 50 0 2 00 0 R M S Lim it 1 50 0 C o nduc tio n Pe rio d 1 00 0 S T 3 8 0 C H ..C S e rie s T J = 1 5 0 °C 5 00 0 0 1 60 0 500 10 0 0 15 0 0 2 0 00 2 5 00 A v e ra g e O n - sta t e C u rre n t (A ) A v e ra g e O n - sta t e C u rre n t (A ) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 12000 At Any Rated Load Condition An d W ith Rated VRR M Applied Following Surge. In itial TJ = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 11000 10000 9000 8000 7000 ST380CH..C Series 6000 5000 1 6 R M S Lim it M a xim u m A v e r a ge O n - st a te P o w e r Lo ss (W ) 2 5 00 1 5 00 1 50 0 Fig. 4 - Current Ratings Characteristics 10 100 P e ak H a lf S in e W a v e O n -st a t e C u rr e n t (A ) Peak Half Sine W ave On -state Current (A) M ax im u m A v e ra g e O n -st a t e P o w e r Lo ss (W ) Fig. 3 - Current Ratings Characteristics 2 0 00 1 00 0 A v e r a ge O n - st a t e C ur re n t (A ) Average O n-state Curren t (A) 18 0° 12 0° 9 0° 6 0° 3 0° 180° 13000 M a x im u m N o n R e p e t it iv e Su r g e C ur re n t V e rsu s P u lse T ra in D u ra tio n . C o n tr o l O f C o n d u c t io n M a y N o t Be M a in ta in e d . In itia l T J = 1 5 0 °C 11000 N o V o lt a g e R e a p p lie d Ra t e d V R RM R e a p p lie d 10000 12000 9000 8000 7000 6000 ST 3 8 0 C H ..C S e rie s 5000 0.01 0.1 1 Num be r O f Eq ual A m plitu de Half C yc le C urrent Pulses (N ) P u lse Tr a in D u ra t io n (s) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST380CH..C Series Bulletin I25169 rev. C 04/00 Instantan eous On -state Curren t (A) 10000 TJ = 25°C TJ = 150°C 1000 ST380CH ..C Series 100 0.5 1 1.5 2 2.5 3 3.5 In stantaneous O n-state V olta ge (V) Tr a nsie n t T h e rm al Im p e da n c e Z thJ-hs ( K/ W ) Fig. 9 - On-state Voltage Drop Characteristics 0 .1 S T3 8 0 C H ..C Se rie s S te a dy St a t e V a lu e 0 .0 1 R t hJ- hs = 0 .0 9 K / W ( S in g le S id e C o o le d ) R t hJ- hs = 0 .0 4 K / W ( D o ub le S id e C o o le d ) ( D C O pe ra tio n ) 0 .0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Sq u a re W a v e P ulse D u ra t io n (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 1 00 In st a nt an e o u s G a t e V o lt a g e (V ) R e c t a n g u la r g a t e pu lse a ) R e c o m m e n de d lo a d lin e fo r ra te d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) R e c o m m e n de d lo a d lin e fo r 10 (1) (2) (3) (4) <=3 0% rate d di/d t : 10 V, 1 0o hm s PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 4m s 2m s 1m s 0 .6 6 m s (2) (3) (4) (a ) t r<= 1 µ s (b ) 0 .0 1 Tj=-4 0 °C IG D 0 .1 0 .0 0 1 Tj=25 °C V GD Tj=15 0 °C 1 (1) D e v ic e : ST 3 8 0 C H ..C Se rie s 0 .1 F re q u e n c y L im it e d by P G ( A V ) 1 10 1 00 In st a n t an e o u s G at e C ur re n t ( A ) Fig. 11 - Gate Characteristics www.irf.com 7