VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 10 A FEATURES 2 (A) • Designed and JEDEC-JESD47 qualified according to • 125 °C max. operating junction temperature TO-220AB 1 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 3 1 (K) (G) 3 Available APPLICATIONS • Typical usage is in input rectification crowbar (soft star) and AC switch in motor control, UPS, welding, and battery charge PRODUCT SUMMARY Package TO-220AB Diode variation Single SCR IT(AV) 6.5 A VDRM/VRRM 800 V VTM 1.15 V DESCRIPTION IGT 15 mA TJ - 40 °C to 125 °C The VS-10TTS08... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES 6.5 UNITS A IT(RMS) 10 VRRM/VDRM 800 V ITSM 110 A VT 6.5 A, TJ = 25 °C dV/dt dI/dt TJ 1.15 V 150 V/μs 100 A/μs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 800 800 1.0 Range VOLTAGE RATINGS PART NUMBER VS-10TTS08PbF, VS-10TTS08-M3 Revision: 26-Jul-13 Document Number: 94572 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS VALUES TC = 112 °C, 180° conduction half sine wave UNITS 6.5 10 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 95 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 110 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 45 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 64 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 640 Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V 17.3 m 0.85 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C A2s A2s 0.05 1.0 30 mA Anode supply = 6 V, resistive load, TJ = 25 °C 50 TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open 150 V/μs 100 A/μs VALUES UNITS TRIGGERING PARAMETER TEST CONDITIONS SYMBOL PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Maximum peak gate power Maximum average gate power Maximum required DC gate current to trigger IGT Maximum required DC gate voltage to trigger VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 65 °C 20 Anode supply = 6 V, resistive load, TJ = 25 °C 15 Anode supply = 6 V, resistive load, TJ = 125 °C 10 Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2 Anode supply = 6 V, resistive load, TJ = 25 °C 1 Anode supply = 6 V, resistive load, TJ = 125 °C 0.7 TJ = 125 °C, VDRM = Rated value W mA V 0.2 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq Revision: 26-Jul-13 TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.8 3 μs 100 Document Number: 94572 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS TEST CONDITIONS VALUES UNITS - 40 to 125 °C DC operation 1.5 Mounting surface, smooth and greased 0.5 2 Approximate weight minimum Mounting torque maximum 125 10TTS08 R thJC (DC) = 1.5 K/ W 120 Conduction Angle 115 30° 60° 90° 120° 180° 105 1 2 3 4 5 6 7 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) oz. 6 (5) kgf · cm (lbf · in) 10TTS08 8 180° 120° 90° 60° 30° 7 6 5 RMSLimit 4 3 Conduction Angle 2 10TTS08 TJ= 125°C 1 0 0 10TTS08 R thJC (DC) = 1.5 K/ W 120 Conduction Period 115 30° 60° 110 90° 120° 180° DC 105 0 2 4 6 8 10 Average On-state Current (A) Fig. 2 - Current Rating Characteristic Revision: 26-Jul-13 2 3 4 5 6 7 Fig. 3 - On-State Power Loss Characteristics 12 Maximum Average On-state Power Loss (W) Fig. 1 - Current Rating Characteristics 125 1 Average On-state Current (A) Average On-state Current (A) Maximum Allowable Case Temperature (°C) 0.07 Case style TO-220AB 110 g 12 (10) Marking device 0 °C/W 62 12 DC 180° 120° 90° 60° 30° 10 8 6 RMS Limit 4 Conduc tion Period 10TTS08 TJ = 125°C 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Document Number: 94572 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors 120 110 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 90 80 70 60 50 100 90 80 70 60 VS-10TTS08 50 VS-10TTS08 40 0.01 40 1 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 110 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 100 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 10 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 10TTS08 100 TJ= 25°C 10 TJ= 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Insta ntaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 10TTS08 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 26-Jul-13 Document Number: 94572 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08PbF, VS-10TTS08-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 1 10 T T S 08 PbF 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - Circuit configuration: T = Single thyristor 4 - Package: T = TO-220AB 5 - 6 - Voltage code x 100 = VRRM 7 - Environmental digit: Type of silicon: S = Converter grade PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10TTS08PbF 50 1000 Antistatic plastic tubes VS-10TTS08-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 26-Jul-13 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -M3 www.vishay.com/doc?95028 Document Number: 94572 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000